4 PIN DI IP PHOT TOTRAN NSISTO OR PHO OTOCOU UPLER E EL817 S Series

Schema atic

F Features:
Current tr ransfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) = High isola ation voltage e between inp put and outpu ut (Viso=50 000 V rms ) Creepage e distance >7 7.62 mm Operating g temperatur re up to +110 0C Compact small outline e package Pb free and RoHS compliant. UL approved (No. E214129) VDE approved (No. 132249) SEMKO approved a NEMKO approved a DEMKO approved a FIMKO approved CSA appr roved

Pin Configu uration 1. Anode 2. Cathode e 3. Emitter 4. Collector

De escription n
The EL817 7 series of de evices each consist c of an n infrared em mitting diodes s, optically co oupled to a phototransisto p or detector. They are packaged p in a 4-pin DIP package p and d available in wide-lead spacing and S SMD option.

Ap pplication ns
Programm mable contro ollers System appliances, a m measuring ins struments Telecomm munication equipments Home appliances, suc ch as fan heaters, etc. Signal tra ansmission between b circu uits of differe ent potentials s and impeda ances

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Absolute Maximum Ratings (Ta=25)

Parameter Forward current Peak forward current (1us, pulse) Input Reverse voltage Power Dissipation

Symbol IF IFP VR PD

Rating 60 1 6 100 2.9 150

Unit mA A V mW mW/C mW mW/C mA V V mW V rms C C C

Break Down Voltage Output Collector current Collector-Emitter voltage Emitter-Collector voltage Total Power Dissipation Isolation Voltage*1 Operating Temperature Storage Temperature Soldering Temperature*2

PC 5.8 IC VCEO VECO PTOT VISO TOPR TSTG TSOL 50 35 6 200 5000 -55 to 110 -55 to 125 260

Notes: *1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. *2 For 10 seconds

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Electro-Optical Characteristics (Ta=25 unless specified otherwise)

Input
Parameter Forward Voltage Reverse Current Input capacitance Symbol VF IR Cin Min. Typ. 1.2 30 Max. 1.4 10 250 Unit V A pF Condition IF = 20mA VR = 4V V = 0, f = 1kHz

Output
Parameter Collector-Emitter dark current Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage Symbol ICEO BVCEO BVECO Min 35 6 Typ. Max. 100 Unit nA V V Condition VCE = 20V, IF = 0mA IC = 0.1mA IE = 0.1mA

Transfer Characteristics
Parameter EL817 EL817A Current Transfer ratio EL817B EL817C EL817D EL817X EL817Y Collector-Emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency Rise time Fall time * Typical values at Ta = 25C CTR Symbol Min 50 80 130 200 300 100 150 VCE(sat) RIO CIO fc tr tf 51010 Typ. 0.1 0.6 80 4 3 Max. 600 160 260 400 600 200 300 0.2 1.0 18 18 V pF kHz s s IF = 20mA ,IC = 1mA VIO = 500Vdc, 40~60% R.H. VIO = 0, f = 1MHz VCE = 5V, IC = 2mA RL = 100, -3dB VCE = 2V, IC = 2mA, RL = 100 % IF = 5mA ,VCE = 5V Unit Condition

Copyright 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Typical Electro-Optical Characteristics Curves

Copyright 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

VCC IF Input Pulse

IC

RL Output

Input RIN Output Pulse tr ton Figure 7. Switching Time Test Circuit & Waveforms

10% 90%

tf toff

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Order Information
Part Number

EL817X(Y)(Z)-FV
Note X Y Z F V = Lead form option (S, S1, S2, M or none) = CTR Rank (A, B, C, D, X , Y or none) = Tape and reel option (TA, TB, TU, TD or none). = Lead frame option (F: Iron, None: copper) = VDE safety (optional).

Option None M S (TA) S (TB) S1 (TA) S1 (TB) S2 (TA) S2 (TB) S (TU) S (TD) S1 (TU) S1 (TD) Standard DIP-4

Description

Packing quantity 100 units per tube 100 units per tube 1000 units per reel 1000 units per reel 1000 units per reel 1000 units per reel 500 units per reel 500 units per reel 1500 units per reel 1500 units per reel 1500 units per reel 1500 units per reel

Wide lead bend (0.4 inch spacing) Surface mount lead form + TA tape & reel option Surface mount lead form + TB tape & reel option Surface mount lead form (low profile) + TA tape & reel option Surface mount lead form (low profile) + TB tape & reel option Surface mount lead form (Gull-wing) + TA tape & reel option Surface mount lead form (Gull-wing) + TB tape & reel option Surface mount lead form + TU tape & reel option Surface mount lead form + TD tape & reel option Surface mount lead form (low profile) + TU tape & reel option Surface mount lead form (low profile) + TD tape & reel option

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Package Dimension (Dimensions in mm)

Standard DIP Type

Option M Type

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Option S Type

Option S1 Type

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Option S2 Type

Recommended pad layout for surface mount leadform

For S and S1 option For S2 option

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Device Marking

EL 817 RYWWV
Notes EL 817 R Y WW V denotes EVERLIGHT denotes Device Number denotes CTR Rank (A, B, C, D or none) denotes 1 digit Year code denotes 2 digit Week code denotes VDE (optional)

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Tape & Reel Packing Specifications

Option TA Option TB

Direction of feed from reel

Direction of feed from reel

Tape dimensions

Tape dimensions

Dimension No. Dimension (mm) Dimension (mm) S2 Dimension No. Dimension (mm) Dimension (mm) S2

A 10.50.1 12.150.1 Po 4.00.1 4.00.1

B 4.650.1 4.650.1 P1 12.00.1 16.00.1

Do 1.550.1 1.550.1 P2 2.00.1 2.00.1

D1 1.500.1 1.500.1 t 0.350.1 0.350.1

E 1.750.1 1.750.1 W 16.00.3 16.00.3

F 7.50.1 7.50.1 K 4.750.1 3.900.1

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Option TD

Option TU

Direction of feed from reel

Direction of feed from reel

Tape dimensions

Dimension No. Dimension(mm) Dimension No. Dimension(mm)

A 16.000.3 G 1.5+0.1/-0

B 7.50.1 H 10.40.1

C 1.750.1 I 0.40.05

D 8.00.1 J 4.550.1

E 2.00.1 K 5.10.1

F 4.00.1 L 1.50.05

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

Precautions for Use

1. Soldering Condition 1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile

Note:

Reference: IPC/JEDEC J-STD-020D

Preheat Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to Tp) Other Liquidus Temperature (TL) Time above Liquidus Temperature (t L) Peak Temperature (TP) Time within 5 C of Actual Peak Temperature: TP - 5C Ramp- Down Rate from Peak Temperature Time 25C to peak temperature Reflow times .

150 C 200C 60-120 seconds 3 C/second max

217 C 60-100 sec 260C 30 s 6C /second max. 8 minutes max. 3 times

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DATASHEET 4PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER EL817 series

DISCLAIMER
1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please dont reproduce or cause anyone to reproduce them without EVERLIGHTs consent.

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Copyright 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000046 Rev.13

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