Semiconductor Device Laboratory

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E-mail: kimks@sogang.ac.kr Homepage: http://device.sogang.ac.kr Office: CY413, Lab.: CY401

Contents
I.

II.
III. IV.

V.

Semiconductor Device LAB., Sogang Univ.

I. -
BS/MS/PhD in EE at Sogang University BS : 1977-1981 MS : 1981-1983 (Thrust area: Semiconductor Process) MS thesis: A Study on the Anomalous Diffusion of Impurities in Silicon PhD : 1988-1992 (Thrust area: Semiconductor device) PhD thesis: A Study on the Design & Fabrication of Polysilicon SelfAligned BiCMOS Device (Advisor: Dr. Chul Ahn)

Principal Research Engineer at ETRI (1983. 2 1998. 12) R&D for semiconductor devices - CMOS, BiCMOS & Analog CMOS devices
Principal Research Engineer at IITA (1999. 1 2005. 4) R&D Planning & Management of IT technology Principal Research Engineer at DGIST (2005. 4 2008. 5) R&D for IT converging technology Intelligent Vehicle Associate Professor at Sogang University (2008. 9 present) R&D for Convergence Technology Analog IC for TPMS etc.

Semiconductor Device LAB., Sogang Univ.

I. -
(Doohyung Cho)
M.S. candidate cdhengud@naver.com Power MOSFET Device for Medium Voltage Application CY 401

(Byungsoo Kim)
M.S. candidate sad659@naver.com IGBT Device for High Voltage Application CY 401

(Hongil Choi)
Undergraduate Researcher caroni@naver.com SiC Power Device & Process CY 401
Semiconductor Device LAB., Sogang Univ.

II.

1. Power Device
Power MOSFET IGBT Silicon Carbide

2. Analog CMOS Devices

Semiconductor Device LAB., Sogang Univ.

1. Power Device
(Power Device)?
(Power Electronics)

Semiconductor Device LAB., Sogang Univ.

1. Power Device
General Purpose Memory Dynamic RAM(DRAM) Static RAM(SRAM) ( Diode, PSRAM Non-Volatile Memory Flash Memory Nor Flash Nand Flash ROM (EPROM, EEPROM, Mask ROM) Others Microcomponent Logic Analog IC Discrete Microprocessor, Microcontroller, Digital Signal Processor FPGA/PLD, Stand Logoc, LCD Driver, Others Voltage Regulator/Reference, Ampifier/Comparator, Data Converter/Switch/Multiplexer, Interface, Others Transistor Power Transistor Bipolar IGBT Power MOSFET Others Diode Thyristor Others Optical Semiconductor Sensor Application Specific Device Image Sensor(CCD, CMOS), LED Lamp/Display Coupler, Others Pressure/Temperature/Accel/Magnetic field sensors, Others ASIC, ASSP Thyristor (SCR, Triac, GTO ) , , IGBT MOSFET BPTR . / / , MOSFET BPTR SBD, FRD ) , , , / / / / / TV, , Diode , AV

Transistor

MOSFET, IGBT

Semiconductor Device LAB., Sogang Univ.

1. Power Device
2015 226 IGBT MOSFET (Nomura)

IGBT 2010 27 ( 18 ) 51% , 2013 41 2013 CAGR 22.6% FA 2009 EV,

MOSFET 2009 41 2013 73 2013 CAGR 15.5%

PC, LCD TV

IGBT, MOSFET

Semiconductor Device LAB., Sogang Univ.

1. Power Device

Semiconductor Device LAB., Sogang Univ.

1. Power Device

Power MOSFET

New BCD power device & process which is one of best technology for PMIC and automotive IC, etc as follows.
New MOSFET structure

Super junction technology

Semiconductor Device LAB., Sogang Univ.

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1. Power Device

Power MOSFET

Development of novel MOSFET structure with high voltage & low onresistance characteristics VDMOSFET, TDMOSFET, Super MOSFET

VDMOS Structure Low cell density High RON JFET resistance

TDMOS Structure High cell density Low RON No JFET resistance VDMOS TDMOS Medium Low Low Medium

Super MOS Structure High Current & High Voltage Very Low RON No JFET resistance Super Junction DMOS Very Low High Low Medium

Epi resistance Breakdown JFET resistance Parasitic capacitor

High Medium High Low

Semiconductor Device LAB., Sogang Univ.

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1. Power Device

Power MOSFET

Study on the super junction technology for very high breakdown voltage & low on-resistance
- Multi epi, deep trench, multi Ion-Implantation technologies - Optimization of epi-area
Multi Epi Technology Easy process and field control Many process steps Higher cost N-epi control (, T), out diffusion control, align etc.

Deep Trench Technology

Easy to scale down Few process steps and lower cost Hard process and field control Deep trench fill uniformity Deep trench uniformity

Multi Ion-Implantation

Easy process and field control High energy implantation Limit to low voltage Ion implantation control and out diffusion control

Semiconductor Device LAB., Sogang Univ.

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1. Power Device

Power MOSFET

Study on BCD integration technology of logic & power device for high compatibility
- Integration of super junction & vertical power device with logic device using BCD Technology. - Deep trench etch, void free trench filling technology (Step Coverage > 90%)
Logic DEVICES
source base emitter
P-B/L n-epi n-drift

POWER TRANSISTOR
source gate drain
p-body

gate

drain

source

gate

p+

n+ base collector

p+

p+

p+

p+ n-well

p+

p+

n+ p-well p-well p-well

p+

n+

n+

deep n-well

P B/L N+ B/L

P- substrate

drain Zener Diode High Voltage PMOS Low Voltage PMOS Low Voltage NMOS High Voltage NMOS

SJ-TDMOS

<Cross-section of one-chip Integration>

Semiconductor Device LAB., Sogang Univ.

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1. Power Device
MOSFET
Fast Switching Low power consumption High on-resistance

IGBT
IGBT
low on-state voltage drop superior on-state current density Low driving power easy control in high voltage Wide SOA

BJT
Low on-resistance High blocking voltage

<Structure of Insulated Gate Bipolar Transistor>

<System requirement of Power semiconductor Devices >

Semiconductor Device LAB., Sogang Univ.

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1. Power Device

IGBT

Trench technology reduces channel resistance and increase stored carrier in upper side of N-base.

<Impact of trench gate technology on IGBT conduction loss reduction.>

Semiconductor Device LAB., Sogang Univ.

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1. Power Device

IGBT

Thin wafer technology satisfies both minimum N-base thickness and optimum hole injection from backside P-emitter, realizing low conduction loss and switching loss.

PT
N-base length P-emitter hole injection Carrier lifetime in N-base

NPT Long Low Long

Thin wafer-PT Short Low Long

Short High Short

Semiconductor Device LAB., Sogang Univ.

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1. Power Device
Silicon

SiC(Silicon Carbide)

Silicon Material

Silicon Carbide

SiSiC High break down voltage! High Thermal capability!! Low on-resistivity!!! Fast operation speed!!!!

High Performance Device Energy saving power systems High frequency type power systems High temp power systems

Semiconductor Device LAB., Sogang Univ.

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2. Analog CMOS Device

Analog IP Technology
Device Technology
Analog CMOS

Design Technology Convergence Design Device Process

Power Device

Semiconductor Device LAB., Sogang Univ.

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2. Analog CMOS Device

Deep sub micron (~30nm) CMOS device structure & process for high speed analog IC.
Research on new device structure & process to reduce short channel effect Extraction method of exact electrical parameters Modeling technology of new device
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Semiconductor Device LAB., Sogang Univ.

III.

IP

2012.01.01 2012.12.31 2011.05.01 2012.04.30 2009.07.10 2014.06.30

Batteryless TPMS MEMS PET

2011.06.01 2012.05.31

Semiconductor Device LAB., Sogang Univ.

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IV. /
SD LAB - http://device.sogang.ac.kr
- e-mail,

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- - @() - SD Lab : Power Device Power Device

Semiconductor Device LAB., Sogang Univ.

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V.

Semiconductor Device LAB., Sogang Univ.

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