2SK3566

NMOS (MOSIV)

2SK3566

: mm

: RDS (ON) = 5.6 ()

z : |Yfs| = 2.0 S ()
: IDSS = 100 A () (VDS = 720 V)

z
: Vth = 2.04.0 V (VDS = 10 V, ID = 1 mA)

(Ta = 25)

VDSS

900

(RGS = 20k)

VDGR

900

VGSS

30

DC

( 1)

ID

2.5

( 1)

IDP

7.5

PD

40

() ( 2)

EAS

216

mJ

IAR

2.5

() ( 3)

EAR

mJ

Tch

150

Tstg

55150

(Tc=25)

JEDEC

JEITA

SC-67
2-10U1B

: 1.7 g ()

(//) (
/)
()
()
2

Rth (chc)

3.125

C/ W

Rth (cha)

62.5

C/ W

1: 150C
2: ()
VDD90VTch25()L63.4mHIAR2.5ARG25

3:
MOS

2010-01-29

2SK3566
(Ta = 25)

IGSS

VGS = 25 V, VDS = 0 V

10

V (BR) GSS

IG = 10 A, VDS = 0 V

30

IDSS

VDS = 720 V, VGS = 0 V

100

V (BR) DSS

ID = 10 mA, VGS = 0 V

900

Vth

VDS = 10 V, ID = 1 mA

2.0

4.0

RDS (ON)

VGS = 10 V, ID = 1.5 A

5.6

6.4

|Yfs|

VDS = 20 V, ID = 1.5 A

1.0

2.0

Ciss

470

Crss

10

Coss

50

tr

20

60

30

100

12

toff
Qg
Qgs

Qgd

VOUT
RL =
133

50

Duty <
= 1%, tw = 10 s

pF

ns

tf

ID = 1.5 A

10 V
VGS
0V

ton

VDS = 25 V, VGS = 0 V, f = 1 MHz

VDD200 V

VDD400 V, VGS = 10 V, ID = 2.5 A

nC

(Ta = 25)

( 1)

IDR

2.5

() ( 1)

IDRP

7.5

()

VDSF

IDR = 2.5A, VGS = 0 V

-1.7

trr

720

ns

Qrr

IDR = 2.5A, VGS = 0 V

dIDR / dt = 100 A/s

3.6

()

4: No.

: [[Pb]]/INCLUDES > MCV

: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
K3566

()
No.
4

RoHS
RoHS
(RoHS) 2003 1 27
(EU 2002/95/EC)

2010-01-29

2SK3566

ID VDS

ID VDS
8
6
5.5

5.25

2.5

Tc = 25C

10
8
6

(A)

10

ID

1.6

Tc = 25C

1.2

5.5
2

0.8

ID

(A)

4.75
4. 5

0.4

5.25
1.5
5
1
4.75
0.5

4. 5

VGS = 4 V
0
0

12

16

20

VDS

VGS = 4 V
0
0

24

(V)

12

ID VGS

VDS VGS

2
Tc = 55C

100

25

(V)
VDS

(A)
ID

VDS = 20 V

10

VGS

(V)

Tc = 25

30

1.5

10

0.8
0
0

12

ID = 2.5 A

20

(S)
Yfs

VDS = 20 V

16

VGS

20

(V)

Tc = 25C

Tc = 55C
25
100
1

0.1

0.01
0.01

12

RDS (ON) ID
100

0.1

ID

RDS (ON) ()

Yfs ID
10

(V)

40

0
0

36

VDS

24

10

1
0.01

10

(A)

VGS = 10 V

0.1

ID

10

(A)

2010-01-29

2SK3566

RDS (ON) Tc

IDR VDS

20

10

(A)

Tc = 25C

IDR

16

12

ID = 1.5A

8
VGS = 10 V

0.8

1
0.5
0.3
1
VGS = 0V

10
0
80

40

40

80

Tc

120

0.1
0

160

(C)

0.4

0.8

VDS

VDS

(V)

Vth

(V)

Ciss
100

10

Crss

VGS = 0 V
f = 1 MHz
Tc = 25C
1

10

ID = 1 mA

0
80

100

VDS

VDS = 10 V

(V)

40

40

Tc

PD Tc

80

120

160

(C)

500

20

40

VDS

400

30

300

(W)
PD

(V)

(V)

50

16

VDS
200

20

10

0
0

40

80

120

Tc

160

(C)

VGS

200

ID = 2.5 A
Tc = 25C

100

10

400

200

12

VDD = 100 V

15

Qg

20

VGS

1
0.1

Coss

(pF)

1.6

Vth Tc

1000

1.2

RDS (ON) ( )

(nC)

2010-01-29

2SK3566

rth tw

()
rth (t)/Rth (ch-c)

10

Duty=0.5
0.2
0.1

0.1

0.05

PDM

0.02

0.01

0.01

Duty = t/T
Rth (ch-c) = 3.125C/W
0.001
10

100

10

100

10

tw (s)

EAS Tch

250

EAS

(mJ)

100

(A)

10 ID max () *

ID

100 s *
ID max ()
1

0.1

1 ms *

Tc = 25C

Tc = 25C

0.01
1

10

VDSS max
100

1000

VDS

150

100

50

0
25

200

50

75

100

125

150

() Tch (C)

10000

(V)
15 V

BVDSS
IAR

15 V

VDS

VDD

RG = 25
VDD = 90 V, L = 63.4mH

AS =

1
B VDSS

L I2
B

V
VDSS
DD

2010-01-29

2SK3566

RoHS
RoHS

2010-01-29