HIN VI IN T QUT

SEM
Scanning Electron Microscopy
TS. Nguyn Hong Vit
H Ni, 11/2013
Instructor: Dr. Nguyen Hoang Viet
Office Location: C5-312, Dept. Iron and Steelmaking
Hanoi University of Science and Technology
Facebook: https://www.facebook.com/viet4777
Website: http://kythuatvatlieu.org

About the Author
Ni dung
Nguyn l ca h thng SEM
H thng SEM
Tng tc in t - mu
in t th cp, in t tn x ngc, Tia X c trng
ng dng SEM
Hnh thi b mt
Vi phn tch nguyn t
NGUYN L SEM
Cu to ca h thng SEM
Tng tc in t - mu
SE, BSE v tia X c trng

SEM vs. OM
nh hin vi quang hc
(OM)- nh sng trng
nh hin vi in t qut
(SEM) in t th cp
Scanning l g?
phng i - Magnification
Vng c
chiu/qut
chm in t
Chuyn i
thng tin
F (x, y, S)
Cu to ca thit b SEM

Vacuum System
Electron Source and Accelerating
Voltage
Electron Lenses (electromagnetic)
Condenser Lens(es)
Objective Lens
Stigmator Coils
Beam Deflectors (electromagnetic)
Alignment
Scanning (raster)
Objective Aperture
Multi-Axis Specimen Stage
Detectors
Imaging detectors
Analytical detectors
Operating / Display Systems

Thng s chm in t
4 tham s xc nh c trng u d
ng knh d
p

Dng in i
p

Gc hi t - o
p

Th tng tc V
o

Cc tham s c lp ny cn phi c cn
bng bi ngi vn hnh ti u trng thi
u d p ng yu cu v:
phn gii
di tiu c
Cht lng nh (t s S/N)
Hiu nng phn tch
sng quang in t, |, ca u
d hay sng ngun in t - l
tham s rt quan trng nh
gi ngun in t



2 2 2 2
2
4
4
p p
p p p
p
i i
d d
|
t o t
to
= =
| |
|
|
\ .
su trng
Depth of Field (Focus)



( )
2 ix
2
tan tan
f
p el size
d R
D
M o o o
= = ~

su trng ca SEM in hnh (m)

Atomic number
& topological info
Nguyn t khi v hnh thi b mt



Topological info
Hnh thi b mt


Compositional info
(surface sensitive)
Thng tin v thnh phn lp b mt

Compositional info
(through thickness)
Thng tin v thnh phn
di lp b mt
Tng tc in t - mu
Mu
in t
truyn qua
in t b
hp th
in t
quang
in t Auger
Tia X c trng
in t th cp (SE)
in t tn x ngc (BSE)
Chm in t
tng tc
I
b
, E = 0,530 kV
o = 0,2 1
Th tch tng tc
Chu su khuch tn
Chiu su xuyn thu
Nhit
~0.1 s 10
Tn x in t
+
- -
-
- -
-
+
- -
-
- -
-
-
-
-
-
Gc rng Gc hp
: tng tc vi
ht nhn Phng chuyn ng ca in t
thay i nhng nng lng vn gi nguyn
in t th cp


: tng tc
vi in t dn Nng lng ca in t thay i
cn phng chuyn ng thay i nh (~0.1)
Tia X c trng
in t tn
x ngc

Qu trnh pht sinh e
-
th cp
Mt in t s cp c th sinh ra nhiu in t th cp
Hiu sut pht sinh in t th cp:
1
se se
b b
n i
n i
o = = >
Qu trnh pht sinh e
-
th cp
Tng tc khng n hi gia chm
e
-
n (chm s cp) vi in t
trong mu
Tng tc gia in t tn x ngc
(e
-
BSE
) vi in t trong mu.

=

+

: Hiu sut tng tc vi BSE

: Hiu sut pht sinh in t BSE
phn gii v ph nng lng
Nng lng chm
in t s cp (E
o
)
phn gii ca SEM c
xc nh bi vng tng tc
pht sinh tn hiu
Cc tham s nh hng n
vng tng tc:
ng knh chm tia ti
Nng lng chm tia ti
Khi lng nguyn t
Lp ph
SE vs. BSE
S.E. B.S.E.
phn gii
C nm ~10
2
nm
Nng lng
C eV (< 50 eV) ~E0 (0.8E
0
)
R (th tch tng tc)
~nm C m (R = f(E
o
))
tng phn
Hnh thi b mt Z
So snh cc ngun pht in t
Pht x tia X c trng
T tng tc tn x s y e
-
t
lp K, L, M hay N ca v nguyn
t trong mu, v to thnh 1 ch
trng.
in t t lp v bn ngoi s
chuyn n in vo ch trng.
Khi chuyn mc in t t mc
nng lng cao (lp v bn ngoi)
vo ch trng s pht sinh nng
lng/bc sng tia X c trng
hoc in t Auger.

Pht sinh tia X v Auger
NG DNG SEM
Hnh thi b mt
Vi phn tch nguyn t
Hnh thi b mt
Mu bt:
Hnh thi b mt
Kch thc ht
Mt ct: t chc pha (nh tng phn)
Mu khi:
B mt nh bng (mt ct): t chc pha, bin ht
Mt ph hy: hnh thi b mt C ch ph hy
SE vs. BSE
nh SEM in t th cp
nh SEM in t tn x
ngc (thnh phn)
nh SEM in t tn x
ngc (hnh thi b mt)
H gm cc xt ca
La, Mn, Ca v Al
nh SEM in t tn x ngc (thnh phn) dng
nhn bit cc pha i vi mu a pha.
nhy khi s khi Z thay i nh 0.01
Mu cn c nh bng cn thn khi phn tch
BSE thnh phn
Al
87
Ni
8
La
5
GAP: Mu bt v thiu kt
A A
B
C D D
Ghi ch:
A: nh hnh thi ht bt
B: Phn b kch thc ht bt
Mu thiu kt:
C: Mt ct mu nh bng
D: Mt ph hy mu th nn

D
Cu-TiC, 25% nanosized TiC
MM MM + Mixing
nh hnh thi b mt bt nghin
nh hnh thi b mt ph hy mu sau thiu kt
Hnh thi b mt gang Cr tm thc n mn
Mu c
Mu
nhit
luyn
Vi phn tch nguyn t SEM-EDS
ng dng trong SEM c tn gi EDS hoc EDX xut
pht t thut ng Energy-dispersive X-ray
spectroscopy.
Cc ch vi phn tch:
im (point)
ng (line) line mapping
Vng (area)
Mapping area mapping
EDS: im - Point
Element Weight% Atomic%
Ti K 10.54 13.52
Cu K 89.46 86.48
Totals 100.00
Element Weight% Atomic%
Ti K 1.56 2.06
Cu K 98.44 97.94
Totals 100.00
H bt nghin
Cu-Ti-C
(3%volTiC)

nh cross-section
EDS: Vng - Area
Element Weight% Atomic%

O K 6.49 21.40
Ti K 3.56 3.92
Cu K 89.95 74.68

Totals 100.00
H bt nghin
Cu-Ti-C
(5%volTiC)
EDS: ng Line mapping
E
D
S

i
m
a
g
e
s


o
f

T
i
5
0
C
u
2
0
N
i
2
0
A
l
1
0

p
o
w
d
e
r
s


m
i
l
l
e
d

f
o
r


(
a
)

2

a
n
d

(
c
)

1
0
h
.

T
h
e

c
o
l
o
r

l
i
n
e
s

s
h
o
w

t
h
e


m
e
t
a
l
l
i
c

e
l
e
m
e
n
t
a
l

d
i
s
t
r
i
b
u
t
i
o
n

EDS: Vng Area mapping
Ti liu tham kho
Ti liu tham kho t trng H Illinois
Gio trnh ging dy ca GS. Kim NJ, GIFT, POSTECH, Hn
Quc
Y. Leng, Materials Characterization: Introduction to
Microscopic and Spectroscopic Methods, Wiley (2008)


Ghi ch:
Cc hnh nh khc trong bi lun ny l cc kt qu nghin cu ca chnh
tc gi.