SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2058

DESCRIPTION With TO-220F package Complement to type 2SB1366 Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS With general purpose applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION

Absolute maximum ratings (Ta=25 )

SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 0.5 1.5 W UNIT V V V A A

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V;IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 60 MIN 60 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB

2SD2058

TYP.

MAX

UNIT V

1.5 3.0 10 1.0

V V A mA

3.0 35

MHz pF

Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.2A VCC=30V ,RL=15A 0.65 1.30 0.65 s s s

hFE Classifications O 60-120 Y 100-200 G 150-300

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SD2058

Fig.2 Outline dimensions

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2058