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NPN General Purpose Amplifier

FEATURES & USE
High Collector Breakdown Voltage; Low Noise; Complementary to 2N5401 This device is designed as a general purpose amplifier and switch for applications requiring high voltages.

2N5551
TO 92

1.Emitter 2.Base 3.Collector

Absolute Maximum Ratings

Symbol VCBO VCEO VEBO IC TJ TSTG

Ta = 25`C
Ratings 180 160 5 600 150 -55 - 150 Units V V V mA `C `C

Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature

Electrical Characteristics Ta = 25`C

Symbol BVCBO BVCEO BVEBO ICBO IEBO HFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC=100AIE=0 IC=1mAIB=0 IE=100AIC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=10mA IC=50mA, IB=5mA IC=50mA, IB=5mA 80 Min. 180 160 5 200 200 300 0.25 1.0 V V Typ. Max. Units V V V nA nA

hFE Classification
Classification hFE A 50-100 B1 100-150 B2 150-200 C1 200-230 C2 230-250 C3 250-300

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