You are on page 1of 3

Reg. No.

R 3325
. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2007 B.E./B.Tech. Seventh Semester (Regulatior' 2004) Electronics and Communication Engineering EC 1403 - MICROWAVE ENGINEERING

Time : Three hours

Answer ALL questions.

1. 2. 3. 4. 5. 6. 7. 8. 9. 10.

What are waveguide corners, bends and trvists? Give the X-band frequency range.

What is MESFET?

What is transferred electron effect? What is the other name for O-type tubes? Mention the basic materiais required for microrvaveintegrated circuit. List the various types of striplines used in MMIC. Mention two methodsto measureimpedance. Define return loss and write its expression.

ww

w.

What are HEMT's?

aa na

va

PARTA-(10 x2=20 marks)

N.

co m

(Commonto B.E. (Part-Time) Sixth SemesterRegulation2005) Maximum : 100 marks

PARTB-(5x16=80marks) (a) (i) What is a hybrid ring? With the help of a neat diagram explain its (8) working principle. Derive scattering matrix of E-plane Tee using S-parameter theory' (8) Or (b) (i) What are the advantagesof S-parametersover'Z' or 1f parameters. (3) What is the directivity of an ideal directional coupler?Why? (3)

11.

(ii)

(ii) (iii)

aa na

va
Or'

N.

12. (a)

Explain the constructional details and principle of operation of GaAs (16) MESFET with neat diagrams and characteristiccurves'

co m

From the first principles derive the scattering matrix of an ideal (10) directional coupler.

(b)

(i) (ii)

What are avalanchetransit time devices?

(2)

With neat diagram explain the construction and operating principle of IMPATT diode.

w.

(r2)
(2) (6) (10)

(iii) 13. (a) (i)

Mention any two applications of IMPATT diode' Write down RWH theory of Gunn diode' Explain the various modes of operation of Gunn diode. Or

(ii)

(b)

(i)

ww

Describe with the neat sketch the constructional details and principie of operation of a Reflex Klystron tube. with the help of (8) Applegate diagram illustrate the phenomenonof bunching.

(ii)

Derive expressionsfor bunched beam current and efficiency.

(8)

R 3325

t4.

(a) Explain in detail with suitable diagrams the fabrication techniques of a monolithic microwave integrated circuit. Or (b) Explain in detail the various types of planar transmission Iines with appropriate diagrams. (16) (16)

15. (a)

Describe in detail with block diagram the measurement of VSWR through return loss measurement. Or (16)

(b)

Explain in detail the measurement of load impedance through slotted

co m M aa na va N.

Iine method.

(16)

ww

w.

R 3325

You might also like