SS8050 NPN Epitaxial Silicon Transistor

July 2010

SS8050 NPN Epitaxial Silicon Transistor

Features
2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C)

TO-92

1. Emitter 2. Base 3. Collector

Absolute Maximum Ratings

Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Ta = 25C unless otherwise noted

Parameter

Value
40 25 6 1.5 1 150 -65 ~ 150

Units
V V V A W C C

Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (sat) VBE (on) Cob fT

Ta = 25C unless otherwise noted

Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain

Conditions
IC=100A, IE=0 IC=2mA, IB=0 IE=100A, IC=0 VCB=35V, IE=0 VEB=6V, IC=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=10V, IC=50mA

Min.
40 25 6

Typ.

Max.

Units
V V V

100 100 45 85 40 300 0.5 1.2 1 9.0 100

nA nA

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Current Gain Bandwidth Product

V V V pF MHz

hFE Classification
Classification hFE2 B 85 ~ 160 C 120 ~ 200 D 160 ~ 300

2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 1

www.fairchildsemi.com

SS8050 NPN Epitaxial Silicon Transistor

Typical Performance Characteristics

0.5
1000

VCE = 1V

IC[A], COLLECTOR CURRENT

0.4

IB = 3.0mA IB = 2.5mA

hFE, DC CURRENT GAIN

100

0.3

IB = 2.0mA IB = 1.5mA IB = 1.0mA

0.2

10

0.1

IB = 0.5mA
0 0.4 0.8 1.2 1.6 2.0
1 0.1 1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

Figure 2. DC current Gain

10000

100

IC = 10 IB

VCE = 1V

VBE(sat)
1000

IC[mA], COLLECTOR CURRENT

10 100 1000

10

100

VCE(sat)

10 0.1

0.1 0.0

0.2

0.4

0.6

0.8

1.0

1.2

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

1000

1000

100

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

IE = 0 f = 1MHz

VCE = 10V

Cob [pF], CAPACITANCE

100

10

10

10

100

10

100

400

VCB [V], COLLECTOR-BASE VOLTAGE

IC[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance

Figure 6. Current Gain Bandwidth Product

2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 2

www.fairchildsemi.com

SS8050 NPN Epitaxial Silicon Transistor

Physical Dimensions

TO-92
4.58 0.15
+0.25

14.47 0.40

0.46 0.10

4.58 0.20

1.27TYP [1.27 0.20] 3.60 0.20

1.27TYP [1.27 0.20]

0.38 0.05

+0.10

3.86MAX

1.02 0.10

0.38 0.05

+0.10

(R2.29)

(0.25)

Dimensions in Millimeters

2010 Fairchild Semiconductor Corporation SS8050 Rev. B3 3

www.fairchildsemi.com

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