3

(Diode)

PN (Diode)
-

3.1 (Energy band in Solid)

(Conductor),(Semiconductor)
(Insulator) (Energy band Gap)
(Allow Band)
(Forbidden Band) (valence
band) (Valence Electron)
(Conduction band) 3.1

114

3.1
1.1
(3.1)

EG = EC EV

E :
E :
E 3 eV , 0.1 E < 3 eV
= 0 3.2
EV :
C

EG

115

3.2

3.2
(Element)(Compound)
3.3
4 (IVA) (Si) (Ge)
(Valence Electron) 4 GaAs,GaP
1.4

116

3.3

()
()
3.4 . .
3.5 ()
()

117

0 273

()

()
3.5

3.2.1

1

118

(drift velocity)
(3.2)
vd

(3.2)

vd

(drift velocity)
(Mobility)
A
L V N
t 3.6
(3.3)
vd

3.6
vd =

L
d

vd =

L
=
d

(m / s)

(3.3)

(3.2) (3.3)
(m / s)

(3.4)

119

I=

(3.5)

Q Nq
=
t
t

q = 1.6 1019

(3.5)
coulomb

Nq Nq L Nq L
=
=

t
t L
L t
Nq
I =
vd
L
I=

J=

I
A

(3.6)

J=

I
N
=
qvd
A LA

A/m2

n : =

(3.7)
N
LA

(3.7)
J = n qvd

A/m2

(3.8)

A/m2
(3.9) nq
J = n q

nq =

(3.9)

1
m2 C 1
A 1
C

=
= = (m) 1
3
m
V s s V m V m

(Conductivity ; )
= q n

(m) 1

(3.10)

120

(Resistivity ; )
=

q n

(m)

(3.11)

3.2.2 (Intrinsic semiconductor)

1 1

(298 k)
(Generation of an
electron-hole pair )

(Regeneration of an electron with hole)

3.7

3.7

ni

121

pi

(3.12)

ni = pi

(
)
cm-3
(3.13)
n = p = N T ( )e
N
Ionization Constant
T
K
E
E 0 (eV)
k
8.62 10 eV/K 1.38 1023 J/K

3.8
I ,J

I ,J

32

Eg 0 2 KT

g0

3.8

122

(3.9)
q n ni
= q p pi

(3.14)
(3.15)

Jn =
i

J p
i

J (total ) =

J ( n ) + J ( p )

J (total ) =

q( n ni + p pi )

(3.16)

(total ) = q ( n ni + p pi )

(3.17)

1
q( n ni + p pi )

(3.18)

(total ) =

ni = pi (1.16)
J (in ) = qni ( n + p )
(int) = qni ( n + p )
(int) =

qni ( n + p )

(3.19)
(3.20)
(3.21)

( imurities ) (doping)

123

3.2.3

(Extrinsic semiconductor)

1:104 108


2 3 (boron)
5 (phosphorous) (arsenic)
3.2.3.1 5
(P) (Sb)
5 4
4 1 3.9
(ED)

(Donor)
(N-type)

3.9

124

(Majority
Carriers) (Minority
Carriers) (Mass Action Law)


(3.22)
p n = ni2

N D : ()
nn , pn :

N D

N D + pn = nn
(3.23)
N D >>>> pn (3.23)
nn N D
(3.24)
(3.23)
pn =

ni2
ND

(3.25)

(3.16); J (total ) = q( n ni + p pi )

125

J n =

q(n nn + p pn )

(3.26)

nn >>>> pn (3.26)
J n = qn nn
(3.27)

n =

1
qun nn

(3.28)

3.2.3.2 3
(B) 3
3 3
1 1 3.10
(EA )

3.10

126

(Accptor) (P-type)

(Majority Carriers)
(Minority Carriers)

N A : (
p p , n p :

(3.29)
N A + n p = pn
N A >>>> n p (3.29)
pp N A

(3.22)
ni2
np =
NA

(3.30)

(3.16); J (total ) = q( n ni + p pi )

(3.31)
J p = q( n n p + p p p )
p p >>>> n p (3.30)
(3.32)
J p = q p p p

p =

1
qu p p p

(3.33)

127

3.3
2
(drift current) 3.3.1 (diffusion
Current)


J D
JD =

N N N
+
+

y
z

qD

A / cm 2

(3.34)

N N N
,
,
: 3
x y z
D : (Diffusion Constant)

( )
D=

kT
= VT
q

(3.35)

VT = 0.026eV

; Dn = n VT
; Dp = p VT
1 (3.34)
JD =

qD

dN
dx

A / cm2

(3.36)

J nD =

qDn

dn
dx

A / cm 2

(3.37)

128

J pD =

qDp

dp
dx

(3.38)

A / cm2

J n (tot ) = J n + J nD =

q n nn + qDn

J p (tot ) = J p + J pD =

dn
dx

q p p p qD p

dp
dx

(3.39)
(3.40)

3.3.1
(PN junction)
(P-type)
(N-type)

3.11

3.11

129

(Drift
Current ; J D ) 3.12

(
) (Depletion
Region,Space Charge Region,Transistion Region)
(Contact
Barrier,Potential,Bultin Voltage)

3.12

130

( J D ) ( J )
3.13 (3.41)
0

3.13
V0 =

kT N A N D
ln

q ni2

(3.41)

: 0.2 0.3 V
: 0.6 0.7 V

:1.2 2 V
3.3.2 (Bias PN Junction)

131

2 (Forward
(Reverse Bias)

Bias)

3.3.2.1 (Forward Bias)

()

(VF )
(V jn )
F 0
0 ( J , I )
( J D , I D )
3.14
1
(3.42)
(3.42)
I F = I D I
0

132

3.14
; VS ;V jn

; VP ; VN V jn V0 ( 0 jn 0)

133

3.15 IF
J 0
; J D 1.15

(3.43)
I (tot ) = I I 0
0

jn

(3.42)
IF = ID

(3.44)

3.3.2.2 (Reverse Bias)

3.16

134

R ; 0

0 + R

3.16
2
(3.45)
J >> J D
( J )
( )
I R = I I D

(3.46)
I = I 0 + I R

(3.45)

(3.46)

135

I R = I 0 + I R I D

I 0 , I D 0

(3.47)

(3.47)
I R = I R

(3.48)

3.3 (Diode)

(Diode)

3.3.1

(The Ideal Diiode)

2 3.17(a) 3.17(b)
- (i v characteristic)
()
(reversebiased) cut off

(forwarde-biased) turn on

136

3.17
(a) (b) i-v characteristic (c,d)

3.18 2 3.18(a)
10 V 1 k = 10 mA
3.18(b)
i v (straight-line)
90
piecewise linear

137

3.18
3.19(a)

(siusoid) v 3.19(b)
v
v (very small ,
) 3.19(c) v v
v
3.19(d) v v
3.19(e)
v
v v
v (dc component) 3.19(a)
(rectifier) (ac) (dc)
(rectifier circuit)
I

138

3.19 (a) (b) (c) v

vI 0

(d)

(e)

3.1
3.20(a) (charge) 12 V
v 24 V ,

v 12 V 3.20(b)
2
S

139

24 cos = 12
1
= cos 1
2

= 60

120 1 3

3.20 3.1

Id =

24 12
= 0.12
100

v
24 + 12 = 36 V
S

3.21 2 0
0 V 1 +5 V 3.21(a) 3
v , v v +5 V
v +5 V 1 0
V (cut off) 0 OR
(Boolean)
A

140

Y = A+ B +C

3.21(b) AND
(Boolean)
Y = A B C

3.21 (a) OR-gate (b) AND-gate

3.2 I V 3.22



3.22(a) V = 0
V = 0 D
B

I D2 =

10 0
= 1 mA
10

141

I +1 =

0 (10)
5

I = 1 mA D
I = 1 mA V = 0 V .
3.22(b) V = 0
V = 0 D
1

ID2 =

10 0
= 2 mA
5

B
I +2=

0 (10)
10

I = 1 mA
D (off) D
(on) I
1

D2

ID2 =

10 (10)
= 1.33 mA
15

B
VB = 10 + (10 1.33) = +3.3 V

D I = 0 V = 3.3 V .
1

142

3.22 3.2
3.3.2

-
( I - V Characteristic )

3.23 (Law of Junction)
V
D

143

3.23

( )

xn 0

qVD

(3.49)

P | = Pn e kT
xno

( )

xp0

qVD

(3.50)

n | = n p e kT
x po

Pn , n p

( P : , n : )
n

144

(Forward Bias)
(Reverse Bias)

kT
: (Volt-equivalent of temperature : V )

VD

kT
= 25.853mV | = 0.026V
q
300 k

:
(3.49) (3.50)
k

thermal voltage

1.380662 1023

P | = Pn e

Joules/kelvin

VD
VT

(3.51)

xno

n | = npe

VD
VT

(3.52)

x po

(Minority
Carrier) (Recombination)
x , x
(Diffusion Length)

(3.37)
dn
(3.53)
J = qD
n1

p1

nD

dx

V V
V V
dn n x p1 n x p 0 n p n p e D T n p (e D T 1)
=
=
=
dx
x p1 x p 0
Ln
Ln

(3.53)
J nD = qDn

n p (eVD VT 1)
Ln

(3.54)

145

(3.38)
J pD = qD p

dp
dx

(3.55)

dp p x p1 p x p 0 pn pn eVD VT
p (eVD VT 1)
=
=
= n
dx
xn1 xn 0
Lp
Lp

(3.55)
J pD = qD p

pn (eVD VT 1)
Lp

(3.56)

J totD = J nD + J pD =
=

ID = J A

VD
VT

qDn n p (e 1) qD p pn (e 1)

D n
D p
q n p + p n
Lp
Ln

Ln

Lp

VVD
e T 1

Dn n p D p pn VVD
I D = qA
e T 1
+

L p
n

Dn n p D p pn
+
I S = qA

L
L p
n

VVD

I D = I S e T 1

VD
VT

(3.57)

I (Saturation current)
(3.57),(3.58) (Schockley Diode Equation)

146

-

....(VoltageAmpere Characteristics Curve) V-I ...(V-I Curve)
v i
i v 3.24

3.24 i v
( Region) 3
1. v > 0
2. v < 0

147

3. v < VZK
3
3.3.2.1
(The Forward-Bias Region)
v (3.57)

(3.58)
i = I ( e 1)
v VT

i >> I S

(3.59)

i = I S e v VT

v
v = VT ln

i
IS

(3.61)

i v decade
7 decade 10
(3.59) V I

I =I e
V I
7

V1 VT

I 2 = I S eV2 VT

I2
= e (V2 V1 ) VT
I1

V2 V1 = VT ln

log 10

I2
I1

148

V2 V1 = 2.3VT log

I2
I1

(3.62)

decade (10)
2.3V 60 mV
T

3.3.2.2
v v = 0.25

e
= 6.67 10 1 (3.57)

0.25 0.026

IS

I 10

S

14

10 15 A

3.3.3
(Analysis of Diode Circuits)


(region)
(breakdown) 3.4.6
3.25 V ,
I V

V 5 V .
I I i v
(3.57)
(3.63)
I =I e
DD

DD

VD VT

149

(Kirchhoff)

V V
I =
(3.64)
D

DD

3.25
I I V
( I V ) 2
(graph analysis) (iterative analysis)
(3.63) (3.64)
i v 3.26
(3.63)
(3.64) (load line)
Q (operating
point) I V
(3.63) (3.64) I
V

150

3.26
(3.63) (3.64)

3.3 I V 3.25 V = 5 V .
R = 1 k . 1 mA. 0.7 V .
0.1V . decade ( 0.1 V decade )
V = 0.7 V . (3.64)
D

DD

VDD VD
R
5 0.7
=
= 4.3 mA.
1

ID =

V (3.62)
D

V2 V1 = 2.3VT log

2.3V

= 0.1 V .

I2
I1

151

V2 = V1 + 0.1log

I2
I1

V = 0.7 V , I = 0.1 mA I = 4.3 mA

I = 4.3 mA V = 0.763 V

V2 = 0.763 V

5 0.763
= 4.237 mA.
1
4.237
V2 = 0.763 + 0.1log
4.3

ID =

= 0.762 V .

I = 4.237 mA V = 0.762 V
D

3.27 i v

152

(Simplified
Diode Models) (linear) i v
3.27
(exponential curve) A
B 1 r 0.1 mA
10 mA (straight-lines model)
(exponential model) 50 mV
( piecewise-linear) 3.27
D

; vD VD 0
iD = 0
=
iD = (vD VD 0 ) rD ; vD VD 0

(3.65)

V B r (inverse)
B V = 0.65 V r = 20
D

D0

D0

3.28

153

piecewise-linear (3.65)
3.28 (ideal diode) i
battery-plus-resistance model
D

3.4
3.3 piecewise-linear
3.27 ( V = 0.65 V r = 20 ) 3.27
3.3 (1 mA. 0.7 V . 0.1V decade )
3.25 piecewise-linear 3.28
3.29
D0

VDD VD 0
R + rD
5 0.65
=
= 4.26 mA
1 + 0.02

ID =

VD = VD 0 + I D rD

= 0.65 + 4.26 0.02 = 0.735 V

3.3 (

I D = 4.237 mA

= 0.762 V

3.29 battery-plus-resistance model

154

3.3.4
(The Small-Signal Model)

(mV) (Junction)
0.6-07

Superimpose

3.30

155

3.30(a) ; v (t )
; V
V v (t ) (triangular waveform)
3.30(b) Q V
V 0.7 V .


I D = I S e(VD VT )
(3.65)
(instantaneous) ; v (t )
v (t ) = V + v (t )
(3.66)
; i (t )
(3.67)
iD (t ) = I S e( vD vT )
(3.66) (3.67)
d

iD (t ) = I S e[

VD + vd ( t )] VT

= I S e(VD VT )e( vd (t ) VT )

I S e(VD VT ) I D { (3.65)}
(3.68)

iD (t ) = I D e( vd (t ) VT )

xn
x2
xn
= 1 + x + + ... + + ...
n!
2!
n =0 n !

ex =

(3.68)

( vd ( t ) VT )

v (t ) v (t ) v (t )
= 1 + d + d 2 + d 3 + ...
VT
2!VT
3!VT

vd (t )
VT

(3.69)

156

(3.69)

e( vd (t ) VT ) 1 +

vd (t )
VT

(3.68)
v (t )
I D 1 + d
VT

iD (t )

(3.70)

(3.70) (small-signal approximation)

10 mV .
(3.70)
iD (t ) = I D +

ID
vd (t )
VT

(3.71)

I D
(ac component) vd (t ) {
ID
vd (t )
VT

} (3.71)
(3.72)

iD (t ) = I D + id (t )

ID
vd (t ) id (t )
VT

id (t ) =

ID
vd (t )
VT

(3.73)

(3.73)
id (t ) I D
=
vd (t ) VT

diode smallsignal conductance mhos( ) diode

small-signal resistance, incremental resistance ; rd
rd =

VT
ID

(3.74)

157

(3.74) rd

1
ID

rd (inversely

proportional)

(t )

3.30(b)
rd
i
rd = 1/ D
vD iD = I D

vD
iD =

VD 0

(3.75)

1
( vD VD 0 )
rd

(3.76)

Q 3.31

3.31 Q
(3.76)
vD = VD 0 + iD rd

158

= VD 0 + ( I D + id )rd
= (VD 0 + I D rd ) + id rd
= VD 0 + id rd

3.32

vd = id rd

3.32
3.32(a) (b)
2 (c)
(d)

3.32(d)

159

vd = vs

rd
R + rd

3.5 3.33 R = 10 k V
10 V (superimpose) 1 V
60 Hz I v
0.7 V . 1 mA.

3.33 3.5
I 3.33(b) V
D

ID =

0.7 V .

10 0.7
= 0.93 mA.
10

1 mA. 0.7 V .
0.93 mA.
rd =

VT
25 mV
=
= 26.8
I D 0.93 mA

160

v 3.33(c)
d

0.0268
= 5.34 mV
10 + 0.0268
2.67 mV .

vd ( peak to peak ) = 2

3.5
(Operation in the Reverse Breakdown Region-Zener Diodes)

Breakdown Diodes (Zener Diodes)
(Voltage Recgulator)
3.34
I V
Z

3.34
3.5.1
(Specification and Modeling the Zener Diode)
3.35 i v (Breakdown Region)
I ( data sheet
)
ZK

161

; V ; I Q
6.8 V 10 mA
I I
V
Z

ZT

ZT

V = rz I

r (inverse) Q incremental
resistance dynamic resistor ( data
sheet 1 10 )
z

3.35

162

V 1
V , r I

0.5 W ., 6.8 V .
Z

ZK

700 mA.

i v
3.36
V 1 r
V =V + r I
(3.77)
ZO

I > I

ZK

VZ > VZ 0

ZO

z Z

3.36

163

3.37 ( a ) 3.5 ( b )
3.5
3.37
V = 6.8 V . I = 5 mA., r = 20 I = 0.2 mA.
10 V . 1 V .
(a) V 10 V .
(b) V 1 V .
(c) V R = 2 k
(d) V R = 0.5 k
(e) R
3.35(b)
V V = 6.8 V , I = 5 mA r = 20
(3.77) V = 6.7 V .
Z

Zk

ZO

ZO

164

(a)
V + VZO
R + rz
10 6.7
=
= 6.35 mA
0.5 + 0.02

IZ = I =

VO = VZO + I Z rz
= 6.7 + 6.35 0.2 = 6.83 V .

(b) V

1 V .

VO = V +

rz
20
= 1
= 38.5 mV .
R + rz
500 + 20

6.8V . 2 k = 3.4 mA.
I = 3.4 mA. ()
V = r I = 20 3.4 = 68 mV .

(c)

RL = 2 k

(d) R = 0.5 k 6.8 / 0.5 = 13.6 mA.

I R 6.4 mA. ( V = 10 V . )
(cut off)
V R R
L

VO = V +

RL
0.5
= 10
= 5V.
R + RL
0.5 + 0.5

( V = 6.8 V . )


O

(e) I = I = 0.2 mA.

V V = 6.7 V . R
Z

ZK

ZK

165

(9 6.7) 0.5 = 4.6 mA.

RL

(4.6 0.2) = 4.4 mA.

6.7
1.5 k
4.4

3.5.2

(Design of the Zener Shunt Regulator)

(Voltage
Regulator) V V
V
V raw supply
3.38 shunt

S

3.38
V V
V
I
2
(line regulator) (load
S

166

regulator) line regulator V

V
V
(3.78)
Line regulator
O

VS

mV / V
load regulator V
I
V
(3.79)
Load regulator
O

I L

3.38

R
r
(3.80)
V =V
+V
I (r // R )
O

ZO

R + rz

R + rz

(3.80)
(3.78) (3.79)
r
(3.81)
Line regulator =
z

R + rz

(3.82)

Load regulator = (rz // R )

167

3.39
r R Line Regulator Load regulator
r (3.81) (3.82) r
R

3.39 R
V
V r I
(3.83)
R=
z

S min

ZO

z Z min

I Z min + I L max

3.6 7.5 V . (raw

supply)
15 V . 25 V . 0 15 mA.
V = 7.5 V . 20 mA. r = 10
R , Line regulator , Load regulator
V V I
Z

V
V = 7.5 V . , I = 20 mA. r = 10 (3.77)
V = 7.3 V .
(3.83)
R V = 15 V .
I
= 15 mA. I
= (1 3) I
= 5 mA. R
ZO

ZO

S min

L max

Z min

L max

168

R=

Line regulator

15 7.3 0.01 5
= 383
5 + 15

(3.81)
Line regulator =

Lord regulator

10
= 25.4 mV / V
10 + 383

(3.82)
Load regulator = (rz // R) = (10 // 383)
= 9.7 mV / mA

V 15 V .
S

25 V .

VO = 25.4 mV / V 10 = 0.254 V .

I 0
L

3.4 %

15 mA.

VO = 9.7 mV / mA 15 = 0.15 V .

2 % ##

169

3.6 (Rectifier Circuits)

(Diode Rectifier)
(DC Power Supply)

3.40

3.40

(ac line) 120 V (rms) 60 Hz V
( 5 20 V ) (load)
V (constant)
(power tranformer)
(winding)


(primary winding) N
(ac line) 120 V (secondary winding)
N
v = 120 ( N N ) volts(rms)
O

170

( N N )

v
3.40
(pulse) (filter)
(ripple)

2

3.6.1
(The Half-Wave Rectifier)
3.41
+
3.41(b)
v = 0, v < V
(3.84)
R
R
, v V
(3.85)
v =
v V
O

R + rD

DO

D0

R + rD

DO

(transfer characteristic)
3.41(c) r R (3.85)
v
v V
(3.86)
V = 0.7 0.8 V . 3.41(d)

2
2 ( Peak inverse voltage ;
PIV) (Breakdown)
D

DO

DO

171

3.41 (a) (b) (c)

(d) rD

172

3.41(a) v (cut off)

v = 0 PIV
v
S

PIV = VS

50 % PIV
3.6.2
(Full-Wave Center-Tapped Rectifier)
3.42
(Secondary) (center-tapped)
v
(primary)
v D
D
D R

v
D D
D R

R R
v
3.42(a)
S

173

3.42(b)

VD 0

3.42 (a) (b)

(c)

PIV
D D
(cathod) D v
(anode) v D
v + v v (peak) V + V v
V PIV
PIV = 2V V
1

D0

D0

174

3.6.3
(Full-Wave Bridge Rectifier)
3.43

4
2
(package)
v
D R D
D D
2 v v
(
)
v v
( (v ) = v ) D R
D D D
R
( 3.43(a) R )
v 3.43(b)
S

175

3.43 (a) (b)

PIV PIV
D
(loop) D R D
3

vD3 (reverse) = vO + vD2 ( forward )

vO

D3

PIV = VS 2VD 0 + VD 0 = VS VD 0

176

PIV

3.6.4
(The Rectifier with a Filter Capacitor)
(pulse) v
(Ripple Voltage)
(Power
Supply)
C R
(Filter Capacitor)

3.44 v
V v
(charge) v = v
v V v
V
R
C 3.45(a)
(charge)
V
O

177

3.44 (a) C (b)

R v

v 1 1


C RC ( RC
= RC )
I

178

3.45 CR T

179

3.45 (b) (steady-state)
CR T T
; i
(3.87)
i =v R
; i ()
i =i +i
(3.88)
dv
=C
+i
(3.89)
L

dt

3.45 (c)
1. t
(charge)
(discharge)
T (
v )
O

2. t v
(exponential) v
t v t
i = 0 (3.89)
1

3.
R v CR
v

O

vO = VP Vr

180

V (ripple voltage) CR T V
()
r

4. V , v v V
V
i (dc component)
O

IL =

Vp

(3.90)

v
1
V =V V
(3.91)
O

Vr ( i )
( i )

Dav

D max

vO = VP e t CR

( discharge )
V p e T

CR

Vr = V p 1 eT

CR

VP Vr

xn
x2
xn
=1+ x +
+ ... +
+ ...
n!
2!
n =0 n !

ex =

e T CR

e T CR

CR T

T
CR

181

T
T

Vr = V p 1 1 +
Vp
CR
CR

(3.92)

(3.92) Vr

T
CR

C CR T
(3.92)
(3.92) f = 1 T
1
Vr = V p
(3.93)
fCR

3.45 (b) v
; t
I

V p cos(t ) = V p Vr

= 2 f = 2 T v t
cos(t ) 1 1 (t )2
I

2Vr V p

(3.94)

Vr V p v

; iDav t
(charge)
I

Q sup plied = iDav t

Q lost = CVr

iDav = I L 1 + 2V p Vr

(3.95)

182

; iD max (3.89)
t = t1 = t ( t = 0 )
I L (3.89)
iD max = I L (1 + 2 2V p Vr )
(3.96)
(3.95) (3.96) Vr V p , iD max 2iDav
iD 3.45
3.7 3.45 (a) 60 Hz
Vp = 100 V . R = 100 k C
Vr = 2 V .
,
(3.93) C
C=

V p 1 100
1
=
= 83 F
2 60 10 103
Vr fR

t (3.94)
t

2 Vr V p = 2 2 100 = 0.2 rad

(0.2 2 ) 100 = 3.18

(3.95) I L = 100 10 = 10 mA
iDav = 10 (1 + 2 100 2 ) = 324 mA.

(3.96)

iD max = 10 1 + 2 2 100 2 = 638 mA.

3.45(a) (peak
rectifier)

183

3.42 ( a ) 3.43 ( a )
R

3.46 ( ripple frequency ) 2

T T 2

Vr =

Vp

(3.97)

2 fCR

t (3.94)

iDav = I L 1 + V p 2Vr

iD max = I L 1 + 2 V p 2Vr

(3.98)
(3.99)

Vp , f , R Vr ( I L )
,

Vp (V p VD0 )

V p (V p 2VD 0 )
( peak-rectifier circuit )
( detect )

184

peak detector
AM

3.46

185

3
3.1

P 3.1

186

3.2

P 3.2
P 3.2
v 12 V
(discharge) 12 V . 14 V .
(a)
(b)
14 V .
S

3.3

rms

0.1 mA. 0.7 V .

1 mA. 0.815 V . (
i = I e v v = V ln i i )
S

v VT

187

3.4

P 3.4
I
V = 1 V ., R = 100
D

VD

P 3.4

DD

3.5

3.6

5.1 V . 50 mA r = 7 15 V .
200
(a)
(b) Line Load Regulator

0.1, 1, 10 mA

3.7

r
D

188

(a)

= sin 1 (VDD

(b)

3.8

( 2 )
(dc component) v
O

vOaverage = VO

(c)

V ) ( )

(1 )VS VDO

(V

VDO ) R

C
R
12 V , 60 Hz V = 0.8 V
R = 100
(a) C 1V
(b)
(c)
(d)
(e)
(f) PIV
rms

DD

p p

189

1.
2.
3.
4.
5.
6.

Sedra, S. A. and Smith C. K. , Microelectronic Circuits, Oxford University Press,

New York, 4th ed., 1998
Sedra, S. A. and Smith C. K. , Microelectronic Circuits, Oxford University Press,
New York, 5th ed., 2004
Neamen, A. D., Electronic Circuit Analysis and Design, McGraw-Hill
International Edition, New York, 2nd ed., 2002
Floyd, L. T., Electronic Devices, Prentice-Hall International Inc. ,New Jersey, 5th
ed., 1999
E. F. Angelo, Jr., Electronics : BJTs, FETs, and Microcircuits, McGraw-Hill ,
New York, 1969
Franco S., Design with Operational Amplifiers and Analog Integrated Circuits,
McGraw-Hill International Edition, New York, 2nd ed., 1998