NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

PD1503YVS

SOP-8 Halogen-Free & Lead-Free

PRODUCT SUMMARY V(BR)DSS Q2 Q1 30V 30V RDS(ON) 15.8m 21m ID 9A 8A

1 2 3 4
Q2 Q1

8 7 6 5

G : GATE D : DRAIN S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range L = 0.1mH TA = 25 C TA = 70 C TA = 25 C TA = 70 C SYMBOL VDS VGS ID IDM IAS EAS PD Tj, Tstg Q2 30 20 9 7 35 29 43 2 1.28 -55 to 150 C Q1 30 20 8 6 30 21 23 mJ W A UNITS V V

ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Reverse Current Forward Voltage THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1

SYMBOL IR VF TYPICAL

Schottky 0.05 0.45 MAXIMUM 62.5

UNITS mA V UNITS C / W

VR = 25V IF = 1A SYMBOL RJA

Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T A = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A Q2 Q1 Q2 Q1 30 30 1 1 1.7 2 3 3 Oct-28-2009 1
Free Datasheet http://www.datasheet4u.com/

UNIT

MIN

TYP MAX

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

REV 0.9

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

PD1503YVS

SOP-8 Halogen-Free & Lead-Free

Gate-Body Leakage

IGSS

VDS = 0V, VGS = 20V

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 35 30 14.2 10.5 25.6 15.8 25 15

100 100 1 -1 10 -10

nA

VDS = 24V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TJ = 125 C On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VGS = 4.5V, ID = 7A Drain-Source On-State Resistance
1

A 20 15.8 32 21 S m

VGS = 10V, ID = 9A RDS(ON) VGS = 4.5V, ID = 6A VGS = 10V, ID = 7A Q1 Q2 Q1

Forward Transconductance1

gfs

VDS = 10V, ID = 9A VGS = 10V, ID = 7A

DYNAMIC Input Capacitance Ciss N-Channel Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz Q2 Q1 Q2 Q1 Q2 Q1 VGS = 0V, VDS = 0V, f = 1MHz Q2 Q1 Q2 Q1 Q2 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 9A Q1 Q2 Q1 Q2 Q1 1040 560 295 160 139 84 1.5 2 20 11 9 5.5 3.5 2.5 3.5 2.5 nC pF

Reverse Transfer Capacitance

Crss

Gate Resistance

Rg Qg
(VGS=10V)

Total Gate Charge2

Total Gate Charge2 Gate-Source Charge

2 2

Qg
(VGS=4.5V)

Qgs

Gate-Drain Charge

Qgd

REV 0.9 2

Oct-28-2009

Free Datasheet http://www.datasheet4u.com/

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

PD1503YVS

SOP-8 Halogen-Free & Lead-Free

Turn-On Delay Time2

td(on)

Q2 Q1 VDS = 15V ID 1A, VGS = 10V, RGEN = 6 Q2 Q1 Q2 Q1 Q2 Q1

18 19 12 8 40 39 8 6 nS

Rise Time2

tr

Turn-Off Delay Time Fall Time2

td(off)

tf

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T A = 25 C) Continuous Current IS Q2:IF = 9A, VGS = 0V Q1:IF = 7A, VGS = 0V Q2 Q1 Q2 Q1 Q2 Q2:IF = 9A,dIF/dt = 100 A/s Reverse Recovery Charge Qrr Q1:IF = 7A,dIF/dt = 100 A/s Q1 Q2 Q1 15 20 6 12 2.8 2 0.7 1 A

Forward Voltage1

VSD

Reverse Recovery Time

trr

nS

nC

1 2

Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature.

REMARK: THE PRODUCT MARKED WITH PD1503YVS, DATE CODE or LOT #

REV 0.9 3

Oct-28-2009

Free Datasheet http://www.datasheet4u.com/

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

PD1503YVS

SOP-8 Halogen-Free & Lead-Free

Typical Characteristics: Q2 Output Characteristics

25

Transfer Characteristics
25

VGS = 10V VGS = 4.5V

ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

20

20

15 VGS = 3V

15

10

10 TJ=125C TJ=25C 5 TJ=-20C

0 0 0.5 1.0 1.5 2.0 2.5

0 0.0

VDS, Drain-To-Source Voltage(V)

0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, Gate-To-Source Voltage(V)

4.0

On-Resistance VS Temperature
RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON)

Capacitance Characteristic
1.50E+03

2.0 1.8

RDS(ON)ON-Resistance(OHM)

1.20E+03

1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
V GS=10V ID=9A

Ciss

C , Capacitance(pF)

9.00E+02

6.00E+02

3.00E+02

Coss Crss

0.00E+00 0 5 10 15 20 25 30

TJ , Junction Temperature(C)

VDS, Drain-To-Source Voltage(V)

10

VGS , Gate-To-Source Voltage(V)

Gate charge Characteristics Characteristics

IS , Source Current(A)

Source-Drain Diode Forward Voltage

1.0E+03 1.0E+02

8
ID=9A V DS=15V

1.0E+01 1.0E+00 T J =150 C 1.0E-01 T J =25 C 1.0E-02 1.0E-03

0 0 4 8 12 16 20

1.0E-04 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Qg , Total Gate Charge

VSD, Source-To-Drain Voltage(V)

REV 0.9 4

Oct-28-2009

Free Datasheet http://www.datasheet4u.com/

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

PD1503YVS

SOP-8 Halogen-Free & Lead-Free

Safe Operating Area

100 Operation in This Area is Lim ited by RDS(ON) 10

Single Pulse Maximum Power Dissipation

100 90 80 70
SINGLE PULSE RJA = 62.5 C/W TA=25 C

ID , Drain Current(A)

Power(W)

100us 1 1m s 10m s 100m s 0.1 NOTE : 1.V GS = 10V 2.T A=25 C 3.RJA = 62.5 C/W 4.Single Pulse 1S 10S DC

60 50 40 30 20 10 0

0.01 0.1 1 10 100

0.0001

0.001

0.01

0.1

10

VDS, Drain-To-Source Voltage(V)

Single Pulse Time(s)

Transient Thermal Response Curve

1.00E+01

Transient Thermal Resistance

r(t) , Normalized Effective

1.00E+00
Duty Cycle=0.5

0.2 0.1

Note

1.00E-01

0.05 0.02 0.01

1.Duty cycle, D= t1 / t2 o 2.RthJA = 62.5 C/W 3.TJ-TA = P*RthJC(t) 4.RthJA(t) = r(t)*RthJA

single Pluse

1.00E-02 1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

T1 , Square Wave Pulse Duration[sec]

REV 0.9 5

Oct-28-2009

Free Datasheet http://www.datasheet4u.com/

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

PD1503YVS

SOP-8 Halogen-Free & Lead-Free

Typical Characteristics: Q1
25

Output Characteristics
V GS = 10V
25

Transfer Characteristics
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

V GS = 4.5V 20

20

15 V GS = 3V 10

15

10

TJ=125 C TJ=25 C

5 TJ=-20 C 0 0.0

0 0 0.5 1.0 1.5 2.0 VDS, Drain-To-Source Voltage(V) 2.5

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS, Gate-To-Source Voltage(V)

On-Resistance VS Temperature
RDS(ON) RDS(ON)

Capacitance Characteristic
1.00E+03

2.0 1.8

RDS(ON)ON-Resistance(OHM)

8.00E+02

RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON) RDS(ON)

1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150
V GS=10V ID=7A

C , Capacitance(pF)

6.00E+02 Ciss

4.00E+02

2.00E+02 Coss Crss 0.00E+00 0 5 10 15 20 25 30

TJ , Junction Temperature(C)

VDS, Drain-To-Source Voltage(V)

10

Gate charge Characteristics Characteristics

Source-Drain Diode Forward Voltage

1.0E+03 1.0E+02

VGS , Gate-To-Source Voltage(V)

8
V DS=15V

IS , Source Current(A)

ID =9A

1.0E+01 1.0E+00 T J =150 C 1.0E-01 T J =25 C 1.0E-02 1.0E-03

0 0 3 6 9 12 15

1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 1.2

Qg , Total Gate Charge

VSD, Source-To-Drain Voltage(V)

REV 0.9 6

Oct-28-2009

Free Datasheet http://www.datasheet4u.com/

NIKO-SEM

Dual N-Channel Enhancement Mode Field Effect Transistor

PD1503YVS

SOP-8 Halogen-Free & Lead-Free

Safe Operating Area

100 Operation in This Area is Limited by RDS(ON) 10

Single Pulse Maximum Power Dissipation

100 90 80 70
SINGLE PULSE RJA = 62.5 C/W T A=25 C

Power(W)
100 100us 1ms 10ms 100ms

ID , Drain Current(A)

60 50 40 30 20 10 0

0.1

0.01

NOTE : NOTE : 1.V GS = 10V 1.V GS = 10V 2.TA=25 C 2.T=25 C 3.R JA = 62.5 C/W 3.RJA = 3.5 4.Single Pulse C/W 0.1 1 10

1S 10S DC

0.0001

0.001

0.01

0.1

10

VDS, Drain-To-Source Voltage(V)

Single Pulse Time(s)

1.00E+01

Transient Thermal Response Curve

Transient Thermal Resistance

r(t) , Normalized Effective

1.00E+00
Duty Cycle=0.5

0.2 0.1

Note

1.00E-01

0.05 0.02 0.01

1.Duty cycle, D= t1 / t2 o 2.RthJA = 62.5 C/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA

single Pluse

1.00E-02 1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

T1 , Square Wave Pulse Duration[sec]

REV 0.9 7

Oct-28-2009

Free Datasheet http://www.datasheet4u.com/