Chng g 13

JFET T Transistor i t hiu ng tr t ng

T Vng (1/2)
Automatic gain control (AGC) = iu khin t ng li chopper = mch ngt qung Current-source source bias = phn cc ngun dng Current Drain = (cc) mng Field effect transistor (FET)= transistor hiu ng trng Gate = (cc) cng Gate bias = phn cc cng Gate lead = u ra cng Gate G t source cutoff t ff voltage lt = i n p ct G-S G S( (cng-ngun) )

T Vng (2/2)
Metal-oxide semiconductor (MOS) = bn dn oxide kim loi Multiplexing = dn knh Ohmic region = min Ohm (tuyn tnh) Pinchoff voltage = in p nght (nghn) Self-bias Self bias = t phn cc Series switch = cng tc ni tip Shunt Sh t switch it h = cng tc r nhnh h h (song ( song) ) Source follower = mch theo ngun Transcoductance = h dn

Gii thiu
BJT da trn 2 loi ht dn: in t v l FET thuc loi n cc (unipolar) v hot ng ca n ph thuc vo 1 loi ht dn in t hoc l. Phn ln trong cc ng dng tuyn tnh, ngi ta d BJT dng BJT, tuy t nhin hi vi ng dng cn tng tr t vo cao th ngi ta dng FET. Vi cc ng dng chuy h n mch h ng i ta t thch th h dng FET hn v khng c in tch cha do ht dn thiu s trong min tip xc. xc C 2 loi transistor n cc: JFET v MOSFET.

Ni dung chng 13
1. 2 2. 3. 4 4. 5. 6. 7. 8. 9 9. 10. Cc tng c bn Cc ng cong (cc) mng ng cong h dn Ph cc trong mi Phn in Oh Ohm Phn cc trong min tch cc H dn Mch K JFET Cng tc analog dng JFET Cc ng dng JFET khc c bng d liu

13-1 Cc t ng c bn

Transistor hiu ng g trng g (JFET) ( ) knh N Drain n Gate p p VDD G S D VGG Source G S D

JFET
Dng c n cc hot ng da trn 1 loi ht dn: knh N (in t), knh P (l) c iu khin bng in p (in p cng iu khin dng in mng) Tng tr vo cao Khng cha ht dn thiu s Trong phn ln cc ng dng tn thp c th hon i D v S

13-2 13 2 Cc ng cong

(cc) mng

ID theo VDS khi VGS=0 (Fig.13-4)

H c tuyn mng

Cc ng cong (cc) mng

Vi VGS = 0, 0 d dng mng ID cc i IDSS VP = in p nght (nghn=pinch-off) Khi VDS = VP cc min ngho chm nhau Vi VDS > VP JFET hot ng nh ngun dng VGS(off) = -V VP

IDSS

10 8 6 VP = 4 volts C t t current Constant t region i

0V VGS -1 V -2 V -3 V 4V -4 VGS(off)

ID in mA

4 2 0 5 10 15 20

VDS in Volts

Min Ohm
VP phn cch min tch cc vi min Ohm. Ohm Trong min ny, JFET hot ng nh in tr. RDS = VP/IDSS

10 8 6 ID in mA 4 2 0 5 10 15 20 Ohmic region

0V VGS -1 V -2 V -3 V 4V -4

VDS in Volts

Tm tt JFET knh N (1) vi VDS thp

Tm tt JFET knh N (2) vi VDS ln

13-3 ng cong h dn

Transconductance curve
10 8 6 4 2 -4 -2 -3 VGS in i volts l -1 0 ID in mA

ID = IDSS

VGS 1VGS(off)

13-4 13 4 Phn cc trong

min Ohm

Phn cc cng thch hp cho min Ohm.

+VDD RD +VDD RD

VDD ID(sat) = RD

RDS RG S dng 0 volts choVGS v ID(sat) << IDSS (bo ha su). Mch tng ng

-VGG

im Q trong min ohm

10 8 ID(sat) ID in mA 6 4 2 0 ID RDS 5 10 VDS in Volts 15 20 VDD -2 V -3 3V -4 V Q 0V VGS -1 V

13-5 13 5 Phn cc trong

min tch cc

Phn cc bng cu chia p

+VDD Phn cc cng khng thch hp cho min tch cc. VDD ID(sat) = RD + RS R2 RS VS = VG - VGS VG - VGS IDQ = RS

R1

RD

Phn cc ngun dng 2 ngun cp in

Phn cc bng ngun dng

T phn cc

Vi RS trung bnh:

13-6 H dn

H dn
Cho bit tc ng ca in p cng ln dng mng: gm = id/vgs n v ca h dn l micromho i h (mho) h ) hay microsiemen (S). gm l dc ca ng cong h dn. gm0 l g gi tr ti a v xy ra VGS = 0.

ng cong h dn

Max. slope gm0

gm = gm0

VGS 1VGS(off)

8 6 4 2 ID in i mA A
Larger slope

-4

-3
Smaller slope

-2

-1

VGS in volts

H dn v mch tng ng JFET

13-7 Mch K JFET

Mch K ngun chung (CS)

+VDD rd = RD RL R1 RD A = - gmrd

RL vout vin R2 RS

Mch theo ngun (Source follower)

+VDD RD rs = RS RL A= gmrs 1 + gmrs

R1

vin

R2 RS RL vout

13-8 13 8 JFET lm cng tc

analog

Analog Switch

Shunt analog switch vin VGS vout RD vin < 100 mV RD >> RDS

Series analog switch vin RD VGS vout T s ON-OFF tt hn cng tc song song

Chopper

Chopper pp c th dng g cng g tc song g osng g hoc ni tip Mch chopper c th xy dng mch K DC

13-8 13 8 Cc ng dng khc ca JFET

Mch dn knh

Mch K chopper

in tr c iu khin bng p

in tr c iu khin bng g p p
Hot ng trong min ohm vi gi tr VGS gia 0 v VGS(off). Lm vic tt vi tn hiu AC <=200 mVPP in tr tn hiu nh: rds = VDS/ID Khi VGS cng m, rds tng. C th s dng ni tip hoc song song.