:

Heterostructures and its application of LED

20055077

1. Introduction
1960 Alferov, Kroemer 1970
. double
heterostructure confinement .
1980 density of state
threshold voltage quantum well
LED
double heterostructure
.

1. threshold current

heterostructure

threshold

current

double

.1)

heterostructure heterostructure
, , mobility,
.

heterostructure

heterostructure based electron devices

. heterostructure laser telecommunication system
light emitting diode, low noise HEMT, TV, heterostructure
.
semiconductor heterostructure
LED

1) Z.Alferov IEEE J. on selected topics in quant. elec. 6. No.6. 2000. pp.832

2. Heterostructure
A. Definition and band offset
2 1962
R.N.Hall . homojunction Hall LD
threshold current
. Alferov kroemer heterostructure
1970 Alferov
.

heterostructure

?
heterostructure semiconductor
heterogeneous semiconductor structure .
heterostructure elecment . Si
. Si
. Si
Ge Si SiGe heterostructure
. heterostructure Si
Ge lattice constatnt .
GaAs - GaAs
AlxGa1-xAs heterostructure - .
homojunction
.
built in potential

e
V .
-eE, +eE . band slope
.
heterostructure slope
. heterostructure
. (a)
(b) .
discontinous slope .
band edge offset graded
doping .
heterostructure band line up .

 energy band band offset

stradding, staggered, broken gap .

straddling line up heterostructure conduction band valance band

offset . quantum well, superlattice
pair . GaAs-(Al, Ga)As, (Ga, In)As-InP,(Ga, In)P
.
staggered line up shift valance band
minimum conduction band maximum
. AlAs-AlxGa1-xAs (x > 0.3) . band
resonant tunneling diode .
broken-gap line up
confinement .
band offset electron affinity
. conduction band offset Ec
Ec = 1 - 2
electron affinity conduction band offset
2). conduction band offset valance band offset band gap
. band offset electron
affinity rule Anderson 3).

2) N.G. Einsprush, W.R.Frensely Heterostructures and Quantum devices

3) R. L. Anderson IBM. J. Res. Dev 4. 1960. pp283

B. Quasielectric field
homojunction heterojunction .
heterostructure . carrier

4).

(a)

homojunction,

heterojunction.

quasi electric field. (a) electric field

(b) quasielectric fields,
(c)

4) H.Kroemer Rev. Medern Physics. 73. 2001. pp783

(b),

(c)

homogeneous .
"quasielectric field device designer
degree of freedom .
.

junction band structure discontinous

edge .
nature band offset

GaAs (-) valance band

? conduction band interface
. hole potential
homojunction
heterostructure

quasielectric

field

band

discontinous grade doping

?

Ec

semiconductor "A"

Graded region

semiconductor "B"

Ec

--- z ---

band diagram graded doping quasielectric field

. quasielectric field
. homojunction band diagram

 heterostructure band diagram

carrier
.

C. Heterostructure main physical phenomena

heterostructure . heterostructure
, LED
. .5)

heterostructure

(a)

One-side

injection

and

superinjection (b) Quasi electric field carrier (c)

confinement (d) wide-gap window (e) heterostructure interface
diagonal tunneling

(a)

one-side

infection

and

superinjection, (c) confinement. heterostructure

.
(a)f barrier
. (c) double heterostructure
confinement .
population inversion .
.

5) Z.Alferov. Rev. Modern Physics. 73. 2000. pp.767

3. Double heterostructures and its application

double heterostructure carrier
confinment recombination . carrier
(diffusion tail) carrier
double heterostructure . double
heterostructure confinement .6)

homojunction

heterojuncion

doubleheterostructure superinjetion recombination

. heterostructure
doping threshold current
. double heterostructure
confinement .

DHS

carrier

confinment.

light-emitting

active region quasielectric potential

barrier outflow

double heterostructure
quantum well . quantum well
discrete
.
E1

AlGaAs

GaAs
E2

6) H.Kroemer Rev.Mod.Phys 73 2001.783

AlGaAs

 quantum well superlattice

. multi quantum well . .

7)

InGaN/GaN MQW LED

carrier injection "idal" heterojunction

.
defect GaAs
heterostructure . GaP-GaAs

AlAs-GaAs

heterostructure

AlAs-GaAs

lattice

mismatch . heterostructure
lattice mismatch .

lattice mismatch defect

dislocation single crystal
. - - lattice constant
energy gap .8)
7) F.K.Yam, J.Hassan Microelectronics jourmal 36 2005 pp.129
8) Z.Alferov. Rev. Modern Physics. 73. 2000. pp.767

 AB, AB lattice
parameter

heterostructure .

AB,

4. Conclusion
2 heterostructure threshold current
1-dim nanowire 0-dim quantum dot heterostructure
. 2 heterostructure
superlattice
.
heterostructure superlattice . heterostructure
bipolarjunction transistor, MODFET, high speed resonant tunneling diod, HEMT
.
LED heterostructure
heterostructure solar cell
. Mir
GaAs solar cell
. 30%
heterostructure
.
high performance transistor SiGe heterostructure
. GaAs SiGe SiGe
Si . GaAs
10 .
HEMT, CMOS, MODFET .
.

 quantum dot quantum wire heterosturcture

.
quantum dot .
"Heterostructure and its application of LED"
LED heterostructure
. heterostructure
quantum dot, quantum wire .

heterostructure solar cell

"Mir"