Advanced Power Electronics Corp.

AP40T03GH/J-HF-3

N-channel Enhancement-mode Power MOSFET

Simple Drive Requirement Fast Switching Characteristics Low Gate Charge RoHS-compliant, halogen-free G S D

BV DSS R DS(ON) ID

30V 25m 28A

Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
G D S

TO-252 (H)

The AP40T03GH-HF-3 is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP40T03GJ-HF-3) is available where a small PCB footprint is required.
G D S

TO-251 (J)

Absolute Maximum Ratings

Symbol VDS VGS ID at TC=25C ID at TC=100C IDM PD at TC=25C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3

Rating 30 25 28 24 95 31.25 0.25 -55 to 150 -55 to 150

Units V V A A A W W/ C C C

Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient(PCB mount)3

Value 4
62.5

Unit C/W C/W C/W

Maximum Thermal Resistance, Junction-ambient

110

Ordering Information
AP40T03GH-HF-3TR AP40T03GJ-HF-3TB RoHS-compliant halogen-free TO-252 shipped on tape and reel (3000 pcs/reel) RoHS-compliant halogen-free TO-251 shipped in tubes

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AP40T03GH/J-HF-3

Electrical Specifications at Tj=25C (unless otherwise specified)

Symbol BVDSS
BVDSS/ Tj

Parameter Drain-Source Breakdown Voltage

Test Conditions VGS=0V, ID=250uA

2

Min. 30 1 -

Typ. 0.032

Max. Units -

V
V/C

Breakdown Voltage Temperature Coefficient Reference to 25C, ID=1mA

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=18A VGS=4.5V, ID=14A

20 4 1.5 2.3 6 30 10 3 270 70 50

25 45 3 1 25 100 7 430 -

m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current

o

VDS=VGS, ID=250uA VDS=10V, ID=18A VDS=30V, VGS=0V VGS= 25V, VDS=0V ID=18A VDS=20V VGS=4.5V VDS=15V ID=18A RG=3.3, V GS=10V RD=0.83 VGS=0V VDS=25V f=1.0MHz

Drain-Source Leakage Current (T j=150 C) VDS=24V, VGS=0V

Gate-Source Leakage Total Gate Charge

2

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2

Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )

Test Conditions VD=VG=0V , VS=1.3V

1

Min. -

Typ. -

Max. Units 28 95 1.3 A A V

Pulsed Source Current ( Body Diode )

Forward On Voltage

Tj=25C, IS=28A, VGS=0V

Notes:
1.Pulse width limited by maximum junction temperature. 2.Pulse test - pulse width < 300s , duty cycle < 2% 3.Surface mounted on 1 in copper pad of FR4 board,
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
2

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Typical Electrical Characteristics
90 75

AP40T03GH/J-HF-3

T C =25 C ID , Drain Current (A)

10V 8 .0V ID , Drain Current (A)

T C =150 C

10V 8 .0V

60

6 .0V

50

6 .0V

30

25

V G = 4. 0V

V G =4.0V

0 0.0 1.0 2.0 3.0 4.0

0 0.0 1.0 2.0 3.0 4.0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

70

2.0

I D =14A T C =25 C Normalized RDS(ON)

50 1.4

I D =18A V G =10V

RDS(ON) (m )

30

0.8

10
0 5 10 15

0.2 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V)

T j , Junction Temperature ( C)

Fig 3. On-Resistance vs. Gate Voltage

Fig 4. Normalized On-Resistance vs. Junction Temperature

2.5

100

2.0 10

o T j =150 C

T j =25 o C VGS(th) (V)

1.5

IS(A)
1

1.0

0.1 0 0.4 0.8 1.2 1.6

0.5 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( C )

Fig 5. Forward Characteristic of Reverse Diode

Fig 6. Gate Threshold Voltage vs. Junction Temperature

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Typical Electrical Characteristics (cont.)
12

AP40T03GH/J-HF-3
f=1.0MHz
1000

I D =18A VGS , Gate to Source Voltage (V)

9

C iss V DS =10V V DS =15V V DS =20V

C (pF)

100

C oss C rss

0 0 3 6 9 12

10 1 8 15 22 29

Q G , Total Gate Charge (nC)

V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

100

Fig 8. Typical Capacitance Characteristics

1

Duty factor = 0.5

Normalized Thermal Response (Rthjc)

0.2

ID (A)

100us
10

0.1

0.1
0.05

0.02 0.01 Single Pulse

PDM

1ms T C =25 o C Single Pulse

1 0.1 1 10 100

t T
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C

10ms 100ms DC

0.01 0.00001 0.0001 0.001 0.01 0.1 1

V DS ,Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

VDS 90%

VG QG 4.5V QGS QGD

10% VGS td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveforms

Fig 12. Gate Charge Waveform

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Package Dimensions: TO-252
D D1

AP40T03GH/J-HF-3

SYMBOLS

Millimeters
MIN NOM MAX

A2 A3 B1 D D1 E3 F

1.80 0.40 0.40 6.00 4.80 3.50 2.20 0.50 5.10 0.50 -0.35

2.30 0.50 0.70 6.50 5.35 4.00 2.63 0.85 5.70 1.10 2.30 0.50

2.80 0.60 1.00 7.00 5.90 4.50 3.05 1.20 6.30 1.80 -0.65

E2

E3

E1

F1 E1 E2 e C

B1

F1

F
1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions.

A2

R : 0.127~0.381

A3

(0.1mm

Marking Information: TO-252

Laser Marking Product: AP40T03 Package code GH = RoHS-compliant halogen-free TO-252 Date/lot code (YWWSSS) Y: Last digit of the year WW: Work week SSS: Lot code sequence

40T03GH YWWSSS

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Package Dimensions: TO-251
D A

AP40T03GH/J-HF-3

Millimeters
SYMBOLS

c1
D1 E2 A A1 B1 E1 E B2

MIN

NOM

MAX

2.20 0.90 0.40 0.60 0.40 0.40 6.40 4.80 6.70 5.40 1.30 ---7.00

2.30 1.20 0.60 0.85 0.50 0.50 6.60 5.20 7.00 5.60 1.50 2.30 8.30

2.40 1.50 0.80 1.05 0.60 0.60 6.80 5.50 7.30 5.80 1.70 ---9.60

c c1
D

A1
B2 B1 F

D1 E E1 E2

e
F

1. All dimensions are in millimeters. 2. Dimensions do not include mold protrusions.

Marking Information: TO-251

Product: AP40T03

40T03GJ YWWSSS

Package Code GJ = RoHS-compliant halogen-free TO-251 Date Code (YWWSSS) Y : Last digit of the year WW : Work week SSS : Lot code sequence

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