SO T2

2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 8 September 2011 Product data sheet

1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology.

1.2 Features and benefits

Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology

1.3 Applications
Logic level translators High-speed line drivers

1.4 Quick reference data

Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 C Tj 150 C VGS = 10 V; Tsp = 25 C; see Figure 1; see Figure 3 Tsp = 25 C; see Figure 2 VGS = 10 V; ID = 500 mA; Tj = 25 C; see Figure 6; see Figure 8 Min Typ 2.8 Max 60 300 0.83 5 Unit V mA W

Static characteristics

2. Pinning information
Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain
1 2
mbb076

Simplified outline
3

Graphic symbol
D

SOT23 (TO-236AB)

NXP Semiconductors

2N7002
60 V, 300 mA N-channel Trench MOSFET

3. Ordering information
Table 3. Ordering information Package Name 2N7002 TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number

4. Marking
Table 4. 2N7002
[1] % = placeholder for manufacturing site code

Marking codes Marking code[1] 12%

Type number

5. Limiting values
Table 5. Symbol VDS VDGR VGS VGSM ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage peak gate-source voltage drain current pulsed; tp 50 s; = 0.25 VGS = 10 V; Tsp = 25 C; see Figure 1; see Figure 3 VGS = 10 V; Tsp = 100 C; see Figure 1 IDM Ptot Tj Tstg IS ISM peak drain current total power dissipation junction temperature storage temperature source current peak source current Tsp = 25 C pulsed; tp 10 s; Tsp = 25 C pulsed; tp 10 s; Tsp = 25 C; see Figure 3 Tsp = 25 C; see Figure 2 Conditions 25 C Tj 150 C 25 C Tj 150 C; RGS = 20 k Min -30 -40 -65 -65 Max 60 60 30 40 300 190 1.2 0.83 150 150 300 1.2 Unit V V V V mA mA A W C C mA A

In accordance with the Absolute Maximum Rating System (IEC 60134).

Source-drain diode

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

120 Ider (%) 80

03aa25

120 Pder (%) 80

03aa17

40

40

0 0 50 100 150 Tsp (C) 200

0 0 50 100 150 Tsp (C) 200

Fig 1.

Normalized continuous drain current as a function of solder point temperature

10

Fig 2.

Normalized total power dissipation as a function of solder point temperature

003aab350

ID (A) Limit RDSon = VDS / ID 1 tp = 10 s

100 s 10-1 DC 1 ms 10 ms 100 ms 10-2 1 10 VDS (V) 102

Fig 3.

Safe operating area; continous and peak drain currents as a function of drain-source voltage

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions Mounted on a printed-circuit board; minimum footprint ; vertical in still air see Figure 4 Min Typ Max 350 Unit K/W

Rth(j-sp)

150

K/W

103 Zth(j-sp) (K/W) 102

003aab351

= 0.5 0.2 0.1

P = tp T

10

0.05 0.02 single pulse

tp T

1 10-5

10-4

10-3

10-2

10-1

tp (s)

10

Fig 4.

Transient thermal impedance from junction to solder point as a function of pulse duration

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

7. Characteristics
Table 7. Symbol V(BR)DSS VGSth Characteristics Parameter drain-source breakdown voltage gate-source threshold voltage Conditions ID = 10 A; VGS = 0 V; Tj = 25 C ID = 10 A; VGS = 0 V; Tj = -55 C ID = 0.25 mA; VDS = VGS; Tj = 25 C; see Figure 9; see Figure 10 ID = 0.25 mA; VDS = VGS; Tj = 150 C; see Figure 9; see Figure 10 ID = 0.25 mA; VDS = VGS; Tj = -55 C; see Figure 9; see Figure 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 48 V; VGS = 0 V; Tj = 25 C VDS = 48 V; VGS = 0 V; Tj = 150 C VGS = 15 V; VDS = 0 V; Tj = 25 C VGS = -15 V; VDS = 0 V; Tj = 25 C VGS = 10 V; ID = 500 mA; Tj = 25 C; see Figure 6; see Figure 8 VGS = 10 V; ID = 500 mA; Tj = 150 C; see Figure 6; see Figure 8 VGS = 4.5 V; ID = 75 mA; Tj = 25 C; see Figure 6; see Figure 8 Dynamic characteristics Ciss Coss Crss ton toff VSD Qr trr input capacitance output capacitance reverse transfer capacitance turn-on time turn-off time source-drain voltage recovered charge reverse recovery time VGS = 10 V; VDS = 50 V; RL = 250 ; RG(ext) = 50 ; RGS = 50 VDS = 10 V; f = 1 MHz; VGS = 0 V; Tj = 25 C 31 6.8 3.5 2.5 11 0.85 30 30 50 30 10 10 15 1.5 pF pF pF ns ns V nC ns Min 60 55 1 0.6 Typ 2 0.01 10 10 2.8 3.8 Max 2.5 2.75 1 10 100 100 5 9.25 5.3 Unit V V V V V A A nA nA

Static characteristics

Source-drain diode IS = 300 mA; VGS = 0 V; Tj = 25 C; see Figure 11 VGS = 0 V; IS = 300 mA; dIS/dt = -100 A/s

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

1 ID (A) 0.8

003aab352

10

10000 RDSon (m) 8000 VGS (V) = 4

003aab353

4.5

4.5 0.6 6000

4 0.4 4000

10 0.2 VGS (V) = 3.5 2000

0 0 1 2 3 VDS (V) 4

0 0 0.2 0.4 0.6 0.8 ID (A) 1

Fig 5.

Output characteristics: drain current as a function of drain-source voltage; typical values

1
003aab354

Fig 6.

Drain-source on-state resistance as a function of drain current; typical values

2.4
03aa28

ID (A) 0.8

1.8

0.6
1.2

0.4

Tj = 150 C

25 C
0.6

0.2

0 0 2 4 VGS (V) 6

0 60

60

120

Tj (C)

180

Fig 7.

Transfer characteristics: drain current as a function of gate-source voltage; typical values

Fig 8.

Normalized drain-source on-state resistance factor as a function of junction temperature

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

3 VGS(th) (V) 2 max

003aab101

10-3 ID (A) 10-4

003aab100

typ

min

typ

max

min

10-5

0 -60

10-6 0 60 120 Tj (C) 180 0 1 2 VGS (V) 3

Fig 9.

Gate-source threshold voltage as a function of junction temperature

1
003aab356

Fig 10. Sub-threshold drain current as a function of gate-source voltage

102
003aab357

IS (A) 0.8 C (pF) Ciss

0.6 10 0.4 Coss 0.2 150 C 0 0.2 Tj = 25 C 1 10-1 Crss

0.4

0.6

0.8

VSD (V)

10

VDS (V)

102

Fig 11. Source current as a function of source-drain voltage; typical values

Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

8. Package outline
Plastic surface-mounted package; 3 leads SOT23

HE

v M A

Q A A1

1
e1 e bp

2
w M B detail X Lp

1 scale

2 mm

DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1

OUTLINE VERSION SOT23

REFERENCES IEC JEDEC TO-236AB JEITA

EUROPEAN PROJECTION

ISSUE DATE 04-11-04 06-03-16

Fig 13. Package outline SOT23 (TO-236AB)

2N7002 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved.

Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

9. Soldering
3.3 2.9 1.9

solder lands solder resist 3 1.7 2 solder paste 0.6 (3) occupied area Dimensions in mm 0.5 (3) 0.6 (3) 1
sot023_fr

0.7 (3)

Fig 14. Reflow soldering footprint for SOT23 (TO-236AB)

2.2 1.2 (2)

1.4 (2) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4

preferred transport direction during soldering 2.8 4.5

sot023_fw

Fig 15. Wave soldering footprint for SOT23 (TO-236AB)

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET

10. Revision history

Table 8. 2N7002 v.7 Modifications: Revision history Release date 20110908 Data sheet status Product data sheet Change notice Supersedes 2N7002 v.6 Document ID

The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Product data sheet Product data sheet Product data sheet Product specification Product specification Product specification HZG336 2N7002 v.5 2N7002 v.4 2N7002 v.3 2N7002 v.2 2N7002 v.1 -

2N7002 v.6 2N7002 v.5 2N7002 v.4 2N7002 v.3 2N7002 v.2 2N7002 v.1

20060428 20051115 20050426 20000727 19970617 19901031

2N7002

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2N7002
60 V, 300 mA N-channel Trench MOSFET

11. Legal information

11.1 Data sheet status
Document status [1] [2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]

Product status [3] Development Qualification Production

Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.

Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions
Preview The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customers sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customers applications and products planned, as well as for the planned application and use of customers third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customers applications or products, or the application or use by customers third party customer(s). Customer is responsible for doing all necessary testing for the customers applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customers third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

11.3 Disclaimers
Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

2N7002

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Product data sheet

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2N7002
60 V, 300 mA N-channel Trench MOSFET
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customers own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications.

Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customers general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V. HD Radio and HD Radio logo are trademarks of iBiquity Digital Corporation.

12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

2N7002

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2N7002
60 V, 300 mA N-channel Trench MOSFET

13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .1 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contact information. . . . . . . . . . . . . . . . . . . . . .12

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information.

NXP B.V. 2011.

All rights reserved.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 8 September 2011 Document identifier: 2N7002