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LOW FREQUENCY POWER AMPLIFIER

GENERAL DESCRIPTION Out l i ne Drawi ng
CD8227GP i s audi o power IC wi t h bui l t -i n
t wo Channel s devel oped for port abl e radi o
casset t e t ape recorder wi t h power ON/ OFF
swi t ch. Thermal shut down prot ect i on
ci rcui t i s bui l t i n. Because of t he part s
reduct i on and DIP (Dual i n l i ne package),
space meri t i s remarkabl e.


FEATURES
Hi gh Power
Pout =2. 5W/ CH(Typ. ) : (Vcc=9V, RL=4, f=1kHz, THD=10%)
Pout =3. 0W/ CH(Typ. ) : (Vcc=9V, RL=3, f=1kHz, THD=10%)
Vol t age Gai n: Gv=45dB(Typ. ) Rf=120 , f=1kHz
Gv=56. 5dB(Typ. ) Rf=0 , f=1kHz
Low poppi ng noi se at power ON
Smal l Qui escent Current : ICCQ=21mA(Typ. ) (Vcc=9V Vi n=0)
Ri ppl e Rej ect i on Rat i o : R. R. =-52dB(Typ. )(Vcc=9V fri ppl e=100Hz Rg=600 )
Cross Tal k : C. T. = -50dB(Typ. )(Vcc=9V f=1kHz Rg=600 )
Out put Noi se Vol t age : Vno=0. 3mVrms(Typ. )(Vcc=9V Rg=10k
BW=20Hz~20kHz)
St and-By Swi t ch
Soft Cl i p
Bui l t -i n t her mal shut down prot ect i on ci rcui t
Best for suppl y vol t age 9V
Suppl y vol t age range : Vcc=5~12V




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MAXIMUM RATINGS (Ta=25C)
CHARACTERISTIC SYMBOL RATING UNIT

Out put Current (Peak/ CH) IQ( peak) 1. 50 A
Power Di ssi pat i on* PD 3. 00 W
Operat i ng Temperat ure Topr -25~75 C
St orage Temperat ure Tst g -55~150 C
* Val ue for mount i ng on PC board(Refer t o PD-Ta curve)

ELECTRICAL CHARACTERISTICS
(Unl ess ot herwi se speci fi ed , Vcc=9V, f=1kHz, Rg=600, RL=4, Ta=25C)

CHARACTERISTIC SYMBOL TEST CONDITI ON MIN. TYP. MAX. UNIT
Qui escent Current I
CCQ
V
I N
=0 - 21 45 mA
P
OUT( 1)
THD=10% 2. 0 2. 5 -
Out put Power
P
OUT( 2)
THD=10%, R
L
=3 - 3. 0 -
W
Tot al Harmoni c Di st ort i on THD P
OUT
=0. 4W/ CH - 0. 2 1. 0 %
G
V( 1)

Rf=120
V
OUT
=0dBm
43 45 47
Vol t age Gai n
G
V( 2)
Rf=0, V
OUT
=0dBm - 56. 5 -
dB
Input Resi st ance R
I N
- - 30 - k
Out put Noi se Vol t age V
NO

Rg=10k ,
BW=20Hz~20kHz
- 0. 3 1. 0 mV
r ms
Ri ppl e Rej ect i on Rat i o R. R
Rg=600 ,
fri ppl e =100Hz
- -52 - dB
Cross Tal k C. T
Rg=600 ,
V
OUT
=0dBm,
- -50 - dB
Input Offset Vol t age V6, V7 - - 30 60 mV
St and-By Current Ist b SW1-OFF 1 A

TYPICAL DC VOLTAGE OF EACH TERMINAL (Vcc=9V, Ta=25C)

TERMINAL NO. 1 2 3 4 5 6 7 8 9 10 11 12
DC VOLTAGE (V) Vcc 4. 5 8. 7 GND 0. 7 0. 03 0. 03 0. 7 5. 0 8. 7 4. 5 Vcc


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TEST CIRCUIT & BLOCK DIAGRAM

*(1) Thi s I C can be used wi t hout coupl i ng capaci t or ( CI N) , I f vol ume sl i de noi se occur r ed by
i nput off set vol t age i s undesi r abl e, i t needs t o use t he capaci t or ( CI N) .
*( 2) The condenser bet ween t he pi n and t he GND( C11) i s f or r educi ng pop noi se when t he
power ON/ OFF swi t ch ( SW1) i s set t o ON/ OFF.

APPLICATION INFORMATION AND APPLICATION METHOD
1. ADJUSTMENT OF VOLTAGE GAIN
The vol t age gai n Gv i s obt ai ned as fol l ows
by R1, R2 and Rf i n Fi g. 1.
Gv=20l og((Rf+R1+R2)/ (Rf+R1))
When Rf=0 Gv=56. 5dB(Typ. )
When Rf=120 Gv=45dB(Typ. )
By i ncreasi ng Rf , reduct i on of Gv i s possi bl e ,
However, si nce t he feedback Fi g 1.
i ncrease i s l i abl e t o produce osci l l at i on , i t i s recommended t o use t hi s at 40dB or
over.
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2. THERMAL SHUT-DOWN CIRCUIT
The t hermal shut -down ci rcui t i s bui l t i n for t he purpose of prevent i ng t he
dest ruct i on of IC due t o t he abnormal t emperat ure ri se when t he heat radi at i on i s
i nsuffi ci ent .
The operat i on t emperat ure i s set at radi at i on Fi n t emperat ure 175C(Typ. )
At t hi s t emperat ure or over t he bi as i s i nt errupt ed t o prevent t he dest ruct i on of IC.
3. INPUT STAGE
The i nput ci rcui t of t hi s IC i s as
shown i n Fi g. 2. PNP TR: Q1 i s provi ded
i n t he i nput ci rcui t so as t o make i t s
usage possi bl e wi t hout t he i nput
coupl i ng capaci t or.
However , at pi ns and , max
60mV offset vol t age i s produced.
Appl i cat i on aft er checki ng vol ume
sl i de noi se i s recommended.
For cut t i ng t he vol ume sl i de noi se,
Insert t he i nput capaci t or: CI N i n seri es
t o i nt errupt t he DC component Fi g. 2
4. OSCILATION PREVENTIVE MEASURES
For osci l l at i on prevent i ve capaci t or C6 and C7 bet ween t he out put t er mi nal and GND,
i t i s recommended t o use Pol yest er fi l m capaci t or havi ng good charact eri st i cs for
t emperat ure and for hi gh frequency.
Si nce t he charact eri st i cs of t he capaci t or i s l i abl e t o be i nfl uenced by t he
t emperat ure, use t hi s capaci t or aft er t he t emperat ure t est t o check t he osci l l at i on
al l owance.
In addi t i on, as t he posi t i on of t he el ect rol yt i c capaci t or has a remarkabl e i nfl uence
on t he osci l l at i on , connect C10 t o Vcc at t he nearest possi bl e posi t i on from power
GND.
At usi ng t hi s appl i cat i on wi t h t he vol t age gai n reduced, osci l l at i on i s l i abl e t o be
produced. Appl y t he capaci t or aft er checki ng enough for i t s capaci t y, t ype and
mount i ng posi t i on.
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As t he osci l l at i on al l owance vari es accordi ng t o t he pri nt ed pat t ern l ayout , t he
st andard pri nt ed board i s recommended t o be referred t o desi gn i t
5. INPUT VOLTAGE
When t he excessi ve si gnal i s i nput , t urni ng-up i s produced i n t he cl i p waveform.
The t urni ng-up poi nt i s VI N=300mVr ms(Typ. ) : Vcc=9V, RL=4, f=1kHz : Enough care
must be t aken for t hi s phenomenon.
6. POWER ON/ OFF SWITCH
There i s power ON/ OFF swi t ch at pi n 1. However, out put power i s changed by pi n 1
suppl y vol t age when pi n 1 vol t age i n not same pi n 12 suppl y vol t age, aft er referri ng
t o at t ached dat e, sel ect pi n 1 suppl y vol t age.
7. GND LINE
GND pi n i s not separat ed for Pre-GND and for Pw- GND. That i s l i abl e t o cause
di st ort i on and cross t al k worse. Before use t hi s IC, pl ease check i t .

CHARACTERISTIC CURVES


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