Michael, Daphne L.

11040505 ECE2 MATRENG ER1 Q3

I.
1. wafer (substrate)
2. thermal oxidation
3. ultraviolet light photoresist
4. field-effect transistor (FET)
5. ion implantation
6. metal evaporation (deposition)
7. wire bonding (ball bonding)
8. dopant activation annealing
9. lithographic photomask
10. metallization
II.
1. FALSE
2. TRUE
3. FALSE
4. TRUE
5. TRUE
6. FALSE
7. FALSE
8. TRUE
9. TRUE
10. TRUE
III.
1. deposition (oxidation), removal (etching), patterning (photo-lithography), modification
of electrical properties (diffusion/ion implantation)
2. bipolar junction transistor (BJT), field-effect transistor (FET)
3. source (S), drain (D), gate (G), body (base/bulk/substrate)

Michael, Daphne L. 11040505 ECE2 MATRENG ER1 Q2
I.
1. IIIA or 13 [boron, aluminum, gallium, indium]
2. seed
3. extrinsic semiconductor
4. ionization potential (ionization energy)
5.

6. 1
7. diamond
8. V [nitrogen, phosphorus, arsenic, antimony]
9. zone melting (zone refining/floating zone)
10. electronic
II.
1. FALSE
2. TRUE
3. TRUE
4. TRUE
5. TRUE
6. FALSE
7. TRUE
8. TRUE
9. FALSE
10. FALSE
III.
a. point defects, line defects
b. boron, aluminum, gallium
c. nitrogen, phosphorus, arsenic
d. diffusion, ion implantation