Cc loi DIODE thng dng

Cc loi DIODE thng dng

Bi:
Trng Vn Tm
Diode c bn l mt ni P-N. Th nhng, ty theo mt cht tp pha vo cht bn dn
thun ban u, ty theo s phn cc ca diode v mt s yu t khc na m ta c nhiu
loi diode khc nhau v tm ng dng ca chng cng khc nhau.

Diode chnh lu:

L diode thng dng nht, dng i in xoay chiu thng l in th 50Hz n
60Hz sang in th mt chiu. Diode ny ty loi c th chu ng c dng t vi
trm mA n loi cng sut cao c th chu c n vi trm ampere. Diode chnh lu
ch yu l loi Si. Hai c tnh k thut c bn ca Diode chnh lu l dng thun ti a
v in p ngc ti a (in p sp ). Hai c tnh ny do nh sn xut cho bit.

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Cc loi DIODE thng dng

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Cc loi DIODE thng dng

Kiu mu diode vi in tr ng:

Khi in th phn cc thun vt qu in th ngng VK, dng in qua diode tng
nhanh trong lc in th qua hai u diode VD cng tng (tuy chm) ch khng phi l
hng s nh kiu mu trn. chnh xc hn, lc ny ngi ta phi ch n gim
th qua hai u in tr ng r0.

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Cc loi DIODE thng dng

Th d:
T c tuyn V-I ca diode 1N917(Si), xc nh in tr ng r0 v tm im iu hnh
Q(ID v VD) khi n c dng trong mch hnh bn.

Bc 2: vi ID =4,77mA, ta xc nh c im Q (VD=0,9V)
Bc 3: v tip tuyn ti Q vi c tuyn tm in th offset V0.
V0=0,74V

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Cc loi DIODE thng dng

V d: Xem mch dng diode 1N917 vi tn hiu nh VS(t)=50 Sint (mV).

Tm in th VD(t) ngang qua diode, bit rng in tr rB ca hai vng bn dn P-N l
10?.

Gii:
Theo v d trc, vi kiu mu in th ngng ta c VD=0,7V v ID=4,77mA.
T ta tm c in tr ni rd:
rd =

26mV
ID

26mV
4,77mA

= 5,45

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Cc loi DIODE thng dng

rac=10 + 0,45=10,45?
Mch tng ng xoay chiu:
in th nh Vdm ngang qua diode l Vdm =

rac
R + rac Vm

15,45
15, 45+3000

.50

Vdm=0,256 Sint (mV).

Vy in th tng cng ngang qua diode l:
VD(t) = 700mV + 0,256 Sin t (mV).

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Cc loi DIODE thng dng

Kiu mu tn hiu rng v hiu ng tn s.

Khi diode c dng vi ngun tn hiu xoay chiu tn hiu bin ln, kiu mu tn
hiu nh khng th p dng c. v vy, ngi ta dng kiu mu mt chiu tuyn tnh.
Kt qu l na chu k dng ca tn hiu, diode dn v xem nh mt ngt in ng
mch. na chu k m k tip, diode b phn cc nghch v c vai tr nh mt ngt
in h mch. Tc dng ny ca diode c gi l chnh lu na sng (mch chnh lu
s c kho st k gio trnh mch in t).
p ng trn ch ng khi tn s ca ngun xoay chiu VS(t) thp-th d nh in 50/
60Hz, tc chu k T=20ms/16,7ms-khi tn s ca ngun tn hiu ln cao (chu k hng
nano giy) th ta phi quan tm n thi gian chuyn tip t bn k dng sang bn k
m ca tn hiu.
Khi tn s ca tn hiu cao, in th ng ra ngoi bn k dng (khi diode c phn
cc thun), bn k m ca tn hiu cng qua c mt phn v c dng nh hnh v.
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Cc loi DIODE thng dng

Ch l tn s ca ngun tn hiu cng cao th thnh phn bn k m xut hin ng ra

cng ln.

Hiu ng ny do in dung khuch tn CD ca ni P-N kh ln khi c phn cc thun

(CD c tr t 2000pF n 15000pF). Tc dng ca in dung ny lm cho diode khng
th thay i tc thi t trng thi dn sang trng thi ngng dn m phi mt i mt thi
gian (thng c gi l thi gian hi phc, kiu mu diode phi k n tc dng ca
in dung ca ni.

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Cc loi DIODE thng dng

Diode tch sng.

Cng lm nhim v nh diode chnh lu nhng thng vi tn hiu c bin nh v
tn s cao. Diode tch sng thng c ch to c dng thun nh v c th l Ge hay
Si nhng diode Ge c dng nhiu hn v in th ngng VK nh.

Diode schottky:
Ta thy nh hng ca thi gian hi phc (tc thi gian chuyn mch) ln dng sng
ng ra ca mch chnh lu. rt ngn thi gian hi phc. Cc ht ti in phi di
chuyn nhanh, vng him phi hp. Ngoi ra, cn phi to iu kin cho s ti hp gia
l trng v in t d dng v nhanh chng hn. l nguyn tc ca diode schottky.

Ta thy trong diode schottky, thng ngi ta dng nhm thay th cht bn dn loi
P v cht bn dn loi N l Si. Do nhm l mt kim loi nn ro in th trong diode
schottky gim nh nn in th ngng ca diode schottky khong 0,2V n 0,3V.
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Cc loi DIODE thng dng

l diode schottky c in th bo ho ngc ln hn diode Si v in th sp cng

nh hn diode Si.

Diode n p (diode Zener):

Nh kho st phn trc, khi in th phn cc nghch ca diode ln, nhng ht
ti in sinh ra di tc dng nhit b in trng mnh trong vng him tng vn tc
v ph v cc ni ho tr trong cht bn dn. C ch ny c chng cht v sau cng ta
c dng in ngc rt ln. Ta ni diode ang trong vng b ph hu theo hin tng
tuyt v gy h hng ni P-N.
Ta cng c mt loi ph hu khc do s ph hu trc tip cc ni ho tr di tc dng
ca in trng. S ph hu ny c tnh hon nghch, ngha l khi in trng ht tc
dng th cc ni ho tr c lp li, ta gi hin tng ny l hiu ng Zener.

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Cc loi DIODE thng dng

* nh hng ca nhit :
Khi nhit thay i, cc ht ti in sinh ra cng thay i theo:
Vi cc diode Zener c in th Zener VZ < 5V th khi nhit tng, in th
Zener gim.
Vi cc diode c in th Zener VZ>5V (cn c gi l diode tuyt -diode
avalanche) li c h s nhit dng (VZ tng khi nhit tng).

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Cc loi DIODE thng dng

Kiu mu l tng ca diode Zener:

Do tnh cht trn, diode zener thng c dng ch to in th chun.

Th d: mch tao in th chun 4,3V dng diode zener 1N749 nh sau:

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Cc loi DIODE thng dng

Khi cha mc ti vo, th d ngun VS=15V, th dng qua zener l:

I=

VS VZ
R

15 4,3
470

= 22,8mA

* Kiu mu ca diode zener i vi in tr ng:

Thc t, trong vng zener, khi dng in qua diode tng, in th qua zener cng tng
cht t ch khng phi c nh nh kiu mu l tng.
Ngi ta nh ngha in tr ng ca diode l:
r = ZZ =

VZT VZO
IZT

Trong : VZO l in th nghch bt u dng in tng.

VZT l in th ngang qua hai u diode dng in s dng IZT

Diode bin dung: (Varicap Varactor diode)

Phn trn ta thy, s phn b in tch dng v m trong vng him thay i khi
in th phn cc nghch thay i, to ra gia hai u diode mt in dung:
Q

CT = V = W

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Cc loi DIODE thng dng

in dung chuyn tip CT t l nghch vi rng ca vng him, tc t l nghch vi

in th phn cc.
c tnh trn c ng dng ch to diode bin dung m tr s in dung s thay
i theo in th phn cc nghch nn cn c gi l VVC diode (voltage-variable
capacitance diode). in dung ny c th thay i t 5pF n 100pF khi in th phn
cc nghch thay i t 3 n 25V.

Diode hm (Tunnel diode)

c ch to ln u tin vo nm 1958 bi Leo-Esaki nn cn c gi l diode Esaki.
y l mt loi diode c bit c dng khc vi nhiu loi diode khc. Diode hm c
nng pha cht ngoi lai ln hn diode thng rt nhiu (c vng P ln vng N)
c tuyn V-I c dng nh sau:

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Cc loi DIODE thng dng

Khi phn cc nghch, dng in tng theo in th. Khi phn cc thun, in th thp,
dng in tng theo in th nhng khi ln n nh A (VP IP), dng in li t ng
gim trong khi in th tng. S bin thin nghch ny n thung lng B (VV IV). Sau
, dng in tng theo in th nh diode thng c cng cht bn dn cu to. c
tnh c th ca diode hm ty thuc vo cht bn dn cu to Ge, Si, GaAs (galium
Asenic), GaSb (galium Atimonic) Vng AB l vng in tr m (thay i t khong
50 n 500 mV). Diode c dng trong vng in tr m ny. V tp cht cao nn vng
him ca diode hm qu hp (thng khong 1/100 ln rng vng him ca diode
thng), nn cc ht ti in c th xuyn qua mi ni theo hin tng chui hm nn
c gi l diode hm.
T s Ip/Iv rt quan trng trong ng dng. T s ny khong 10:1 i vi Ge v 20:1 i
vi GaAs.
Mch tng ng ca diode hm trong vng in tr m nh sau:

Ls: Biu th in cm ca diode, c tr s t 1nH n 12nH.

RD: in tr chung ca vng P v N.
CD: in dung khuch tn ca vng him.
Th d, diode hm Ge 1N2939: Ls=6nH, CD=5pF,Rd=-152?, RD=1,5?

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Cc loi DIODE thng dng

Diode c vng him hp nn thi gian hi phc nh, dng tt tn s cao. Nhc im
ca diode hm l vng in tr m phi tuyn, vng in tr m li in th thp nn
kh dng vi in th cao, nng cht pha cao nn mun gim nh phi ch to mng
manh. Do , diode hm dn dn b diode schottky thay th.
ng dng thng dng ca diode hm l lm mch dao ng tn s cao.

Bi tp cui chng
1. Dng kiu mu l tng v in th ngng ca diode tnh dng in I1, I2,
ID2 trong mch in sau:

1. I2Tnh dng in I1 v VO trong mch sau (dng kiu mu l tng v in th

ngng ca diode)

1. Tnh IZ, VO trong mch in sau khi R2 = 50? v khi R2 = 200?. Cho bit
Zener s dng c VZ = 6V.

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