Chng 6:

TRANSISTOR TRNG NG FET

(FIELD EFFECT TRANSISTOR)
ThS. Nguyn B Vng
1. i cng v phn loi
FET ( Field Effect Transistor) -Transistor hiu ng trng
Transistor trng.
C 2 loi:
- Junction field- effect transistor - vit tt l JFET:
Transistor trng iu khin bng tip xc P-N (hay gi l
transistor trng mi ni).
- Insulated- gate field effect transistor - vit tt l IGFET:
Transistor c cc ca cch in.
Thng thng lp cch in c dng l lp oxit nn cn
gi l metal - oxide - semiconductor transistor (vit tt l
MOSFET).
Trong loi transistor trng c cc ca cch in c chia
lm 2 loi l MOSFET knh sn (DE-MOSFET) v MOSFET
knh cm ng (E-MOSFET).
Mi loi FET li c phn chia thnh loi knh N v loi
knh P.
FET
JFET MOSFET
N P
DE-MOSFET E-MOSFET
N P N P
k hiu
P N
P
N P N
a). JFET b). MOSFET knh sn c). MOSFET knh cm ng
P N
P
N P N
a). JFET b). MOSFET knh sn c). MOSFET knh cm ng
P N
P
N P N
a). JFET b). MOSFET knh sn c). MOSFET knh cm ng
u nhc im ca FET so vi BJT
Mt s u im:
Dng in qua transistor ch do mt loi ht dn a
s to nn. Do vy FET l loi cu kin n cc
(unipolar device).
FET c tr khng vo rt cao.
Ting n trong FET t hn nhiu so vi transistor
lng cc.
N khng b in p ti dng I
D
= 0 v do n l ci
ngt in tt.
C n nh v nhit cao.
Tn s lm vic cao.
Mt s nhc im: Nhc im chnh ca FET l
h s khuch i thp hn nhiu so vi transistor
lng cc.
Ging v khc nhau gia FET so vi BJT
Ging nhau:
S dng lm b khuch i.
lm thit b ng ngt bn dn.
Thch ng vi nhng mch tr khng.
Mt s s khc nhau:
BJT phn cc bng dng, cn FET phn cc
bng in p.
BJT c h s khuch i cao, FET c tr
khng vo ln.
FET t nhy cm vi nhit , nn thng
c s dng trong cc IC tch hp.
Trng thi ngt ca FET tt hn so vi BJT
2. Cu to JFET
N P P
Drain
(D)
Source
(S)
Gate
(G)
P N N
Drain
(D)
Source
(S)
Gate
(G)
P
C 2 loi JFET : knh n v knh P.
JFET knh n thng thng dng hn.
JFET c 3 cc: cc Ngun S (source); cc Ca G (gate); cc
Mng D (drain).
Cc D v cc S c kt ni vo knh n.
cc G c kt ni vo vt liu bn dn p
N
C bn v hot ng ca JFET
JFET hot ng ging nh hot ng ca mt kha nc.






Ngun p lc nc-tch ly cc ht e
-
in cc m ca
ngun in p cung cp t D v S.
ng nc ra - thiu cc e
-
hay l trng ti cc dng ca
ngun in p cung cp t D v S.
iu khin lng ng m nc-in p ti G iu khin
rng ca knh n, kim sot dng chy e
-
trong knh n t S
ti D.
s mch JFET
JFET knh N khi cha phn cc
N P P
Drain
(D)
Source
(S)
Gate
(G)
JFET knh N khi t in p vo D v S,
chn G khng kt ni
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
JFET knh N khi phn cc bo ha
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
V
G
S
=
0
V
JFET knh N phn cc
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
V
G
S
<
0
V
JFET knh N ch ngng
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
V
G
S
=
-
V
e
JFET knh N khi cha phn cc
N P P
Drain
(D)
Source
(S)
Gate
(G)
JFET knh N khi t in p vo D v S,
chn G khng kt ni
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
JFET knh N khi phn cc bo ha
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
V
G
S
=
0
V
JFET knh N phn cc
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
V
G
S
<
0
V
JFET knh N ch ngng
P P
Drain
(D)
Source
(S)
Gate
(G)
V
DS
I
D
`
V
G
S
=
-
V
e
c im hot ng JFET
JFET knh N c 3 ch hot ng c bn khi V
DS
>0:

A. V
GS
= 0, JFET hot ng bo ha, I
D
=Max

B. V
GS
< 0, JFET hot ng tuyn tnh, I
D


C. V
GS
=-V
ngt
, JFET ngng hot ng, I
D
=0
Nguyn l hot ng ca JFET
c tuyn truyn t
0
2
4
6
8
2 4 6 8 10
I
D
(mA)
U
DS
(V)
10
U
GS
=-4V
U
GS
=-0.5V
U
GS
=-1V
U
GS
=-2V
U
GS
=-0V
3
Vng dng in I
D
khng i
Vng
thun
tr
U
DSsat
nh
thng
c tuyn ra ca JFET ,
U
GS
=const, I
D
=f(U
DS
)
Cc cch mc ca JFET trong s
mch
S cc ngun chung
V
DD
R
D
i
D
C
2
U
Ra
R
S
C
S
R
G
C
1
U
vo
i
G
S cc ngun chung
V
DD
R
D
i
D
C
2
U
Ra
R
S
C
S
R
S
C
1
U
vo
i
G
c im ca s cc ngun chung:
- Tn hiu vo v tn hiu ra ngc pha nhau.
- Tr khng vo rt ln Z
vo
= R
GS

- Tr khng ra Zra = R
D
// rd
- H s khuch i in p S
rd
> 1
- i vi transistor JFET knh N th h s khuch i in
p khong t 150 ln n 300 ln, cn i vi transistor
JFET knh loi P th h s khuch i ch bng mt na
l khong t 75 ln n 150 ln.
S mc cc mng chung
V
DD
i
S
C
2
U
Ra
R
S
R
S
C
1
U
vo
i
G
S mc cc mng chung
c im ca s ny c:
- Tn hiu vo v tn hiu ra ng pha nhau.
- Tr khng vo rt ln Z
vo
= R
GD
=
- Tr khng ra rt nh
- H s khuch i in p < 1
- S cc mng chung c dng rng ri hn, c bn l
do n gim c in dung vo ca mch, ng thi c
tr khng vo rt ln. S ny thng c dng
phi hp tr khng gia cc mch.
V
DD
i
S
C
2
U
Ra
R
S
R
S
C
1
U
vo
i
G
S mc cc ca chung
S ny theo nguyn tc khng c s dng
do c tr khng vo nh, tr khng ra ln.
S D
G G
U
vo
U
Ra
Transistor trng loi cc
ca cch ly (MOSFET)
Transistor MOSFET
y l loi transistor trng c cc ca cch
in vi knh dn in bng mt lp cch in
mng. Lp cch in thng dng l cht oxit
nn ta thng gi tt l transistor trng loi
MOS. Tn gi MOS c vit tt t ba t ting
Anh l: Metal - Oxide - Semiconductor.
Transistor trng MOS c hai loi: transistor
MOSFET c knh sn v transistor MOSFET
knh cm ng. Trong mi loi MOSFET ny li
c hai loi l knh dn loi P v knh loi N.
Cu to ca MOSFET knh sn
Transistor trng MOSFET knh sn cn gi l
MOSFET-ch ngho (Depletion-Mode MOSFET vit
tt l DE-MOSFET).
Transistor trng loi MOS c knh sn l loi transistor
m khi ch to ngi ta ch to sn knh dn.
P N
P
N P N
a). JFET b). MOSFET knh sn c). MOSFET knh cm ng
Nguyn l hot ng
Khi transistor lm vic, thng thng cc ngun S c
ni vi v ni t nn U
S
=0.
Cc in p t vo cc chn cc ca G v cc mng D
l so vi chn cc S.
Nguyn tc cung cp ngun in cho cc chn cc sao
cho ht dn a s chy t cc ngun S qua knh v cc
mng D to nn dng in I
D
trong mch cc mng.
Cn in p t trn cc ca c chiu sao cho MOSFET
lm vic ch giu ht dn hoc ch ngho ht
dn.
Nguyn l lm vic ca hai loi transistor knh P v
knh N ging nhau ch c cc tnh ca ngun in cung
cp cho cc chn cc l tri du nhau.
c tnh truyn t: I
D
= f(U
GS
) khi U
DS
= const
Nguyn l hot ng

c tuyn
a. H c tuyn iu khin I
D
= f(U
GS
) khi U
DS
khng i
b. H c tuyn ra I
D
= f(U
DS
) khi U
GS
khng i
Cu to ca MOSFET knh cm ng
Transistor trng loi MOS knh cm ng cn gi l
MOSFET ch giu (Enhancement-Mode MOSFET
vit tt l E-MOSFET).
Khi ch to MOSFET knh cm ng ngi ta khng ch
to knh dn.
Do cng ngh ch to n gin nn MOSFET knh cm
ng c sn xut v s dng nhiu hn.
P N
P
N P N
a). JFET b). MOSFET knh sn c). MOSFET knh cm ng
Nguyn l hot ng E-MOSFET
Nguyn l lm vic ca loi knh P v
knh N ging ht nhau ch khc nhau v
cc tnh ca ngun cung cp t ln cc
chn cc.
Trc tin, ni cc ngun S vi v ni
t, sau cp in p gia cc ca v
cc ngun to knh dn.
MOSFET Summary
MOSFET type Vgs >0 Vgs =0 Vgs <0
N-Channel DE-MOSFET ON ON OFF
N-Channel E-MOSFET ON OFF OFF
P-Channel DE-MOSFET OFF ON ON
P-Channel E-MOSFET OFF OFF ON
Cch mc MOSFET
C 3 cch mc, tng t nh JFET
2 cch thng dng nht l cc D chung v
cc S chung.
Phn cc JFET v DE-MOSFET
iu hnh theo kiu him
Phn cc c nh
V
GG
+
-
+V
DD
R
D
i
D
D
S
G
i
G
0
2
4
6
8
2 4 6 8 10
I
D
(mA)
V
DS
(V)
10
V
GS
=-V
GG
V
GS
=-1V
V
GS
=-2V
V
GS
=-0V
Q
DD
D
V
R
V
D
S
Q
I
D
(mA)
V
GS
(V)
0
-6 -4 -2 -7
V
G
S
(
O
f
f
)
Q
V
G
S
Q
=
-
V
G
G
I
DSS
Phn cc t ng
I
D
(mA)
V
GS
(V)
0
V
GS(Off)
Q
V
GSQ
I
DSS
R
G
+V
DD
R
D
i
D
D
S
G
i
G
I
DQ
ng phn cc
D GS
S
1
I V
R

R
S
i
S
Phn cc bng cu chia in th
I
D
(mA)
V
GS
(V)
0
V
GS(Off)
Q
1
V
G
S
Q
1
I
DSS
R
2
+V
DD
R
D
i
D
D
S
G
i
G
I
D1
G
D2
S2
V
I
R

R
S
i
S
R
1
R
S2
R
S1
>R
S2
V
G
Q
2
V
G
S
Q
2
I
D2
G
D1
S1
V
I
R

GS G S D
V V R I
DE-MOSFET iu hnh kiu tng
Phn cc bng cu chia in th
I
D
(mA)
V
GS
(V)
0
V
GS(Off)
10.67
R
2
+V
DD
=+18V
R
D
i
D
D
S
G
i
G
R
S
i
S
R
1
Q
V
G
7.6
110M
10M
1.8k
150
i
DSS
=6mA
V
GS(Off)
=-3V
-3V
1
1.5
-1
10
I
DQ
V
G
S
Q
Phn cc bng mch hi tip
in th
+V
DD
R
D
i
D
D
S
G
i
G
R
G
i
DSS
Mch phn cc E-MOSFET
Phn cc bng hi tip in th
+V
DD
R
D
i
D
D
S
G
i
G
R
G
I
D
(mA)
V
GS
(V)
0
V
GS(th)
V
DD
Q
DD
D
V
R
V
GSQ
I
DQ
Phn cc bng cu chia in th
R
2
+V
DD
R
D
i
D
D
S
G
i
G
R
S
i
S
R
1
I
D
(mA)
V
GS
(V)
0
V
GS(th)
V
G
Q
G
D
V
R
V
GSQ
c tuyn truyn
ng phn cc
I
DQ