01/99 B-5

2N3954, 2N3955, 2N3956

N-Channel Dual Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage 50 V
Gate Current 50 mA
Total Device Power Dissipation (each side) 250 mW
@ 85C Case Temperature (both sides) 500 mW
Power Derating (both sides) 4.3 mW/C
TO71 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate,
5 Source, 6 Drain, 7 Gate
At 25C free air temperature:
2N3954 2N3955 2N3956 Process NJ16
Static Electrical Characteristics
Min Max Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
50 50 50 V I
G
= 1A, V
DS
=V
Gate Reverse Current I
GSS
100 100 100 pA V
GS
= 30V, V
DS
=V
500 500 500 nA V
GS
= 30V, V
DS
=V T
A
=125C
Gate Operating Current I
G
50 50 50 pA V
DS
=20V, I
D
=200 A
250 250 250 nA V
DS
=20V, I
D
=200 A T
A
=125C
Gate Source Voltage V
GS
4.2 4.2 4.2 V V
DS
=20V, I
D
=50 A
0.5 4 0.5 4 0.5 4 V V
DS
=20V, I
D
=200 A
Gate Source Cutoff Voltage V
GS(OFF)
1 4.5 1 4.5 1 4.5 V V
DS
= 20V, I
G
=1 nA
Gate Source Forward Voltage V
GS(F)
2 2 2 V V
DS
=V, I
G
=1 mA
Drain Saturation Current (Pulsed) I
DSS
0.5 5 0.5 5 0.5 5 mA V
DS
=20V, V
GS
=V
Dynamic Electrical Characteristics
Common Source Forward
g
fs
1000 3000 1000 3000 1000 3000 S V
DS
=20V, V
GS
=V f =1 kHz
Transconductance
1000 1000 1000 S V
DS
=20V, V
GS
=V f =200MHz
Common Source Output Capacitance g
os
35 35 35 S V
DS
=20V, V
GS
=V f =1 kHz
Common Source Input Capacitance C
iss
4 4 4 pF V
DS
=20V, V
GS
=V f =1 MHz
Drain Gate Capacitance C
dgo
1.5 1.5 1.5 pF V
dg
=10V, I
S
=A f =1 MHz
Common Source Reverse
C
rss
1.2 1.2 1.2 pF V
DS
=20V, V
GS
=V f =1 MHz
Transfer Capacitance
Noise Figure NF 0.5 0.5 0.5 dB
V
DS
=20V, V
GS
=V,
f =100 Hz
R
g
=10M
Differential Gate Current | I
G1
I
G2
| 10 10 10 nA V
DS
=20V, I
D
=200A T
A
=125C
Saturation Drain Current Ratio I
DSS1
/I
DSS2
0.95 1 0.95 1 0.95 1 V
DS
=20V, V
GS
=V
Differential Gate Source Voltage |V
GS1
V
GS2
| 5 10 15 mV V
DS
=20V, I
D
=200A
T
A
=25C
Differential Gate Source Voltage
V
GS1
V
GS2
0.8 2 4 mV/C V
DS
=20V, I
D
=200A
to = 55C
with Temperature T T
A
=25C
1 2.5 5 mV/C V
DS
=20V, I
D
=200A
to =+125C
Transconductance Ratio g
fs1
/g
fs2
0.97 1 0.97 1 0.97 1 V
DS
=20V, I
D
=200A f =1 kHz
Low and Medium Frequency
Differential Amplifiers
High Input Impedance
Amplifiers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/14/99 11:29 AM Page B-5