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Overview
! "
= + =
# $
where P
(x)
is the net total
polarization. This results in a net positive charge at the AlGaN/GaN interface as shown in Fig.
7a. The compressive strain caused by the growth of In
x
Ga
1-x
N on GaN causes a net negative
piezoelectric polarization charge at the In
x
Ga
1-x
N-GaN interface as shown in Fig. 7b. The
magnitude of the charge follows the equation shown below
3
:
( ) ( )
2 6 6 2
( ) 14 1 4 9 x 10 0 3 x 10
pz sp
P x P P x x x Ccm
! "
= + = +
# $
The built-in polarization dipole can have a maximum moment, approximately equal to
,
v g GaN
E E + as apparent from the band-diagram in Fig. 8a. The charge distribution is then
composed of the polarization dipole Q
, Q AlGaN
, Q GaN
, Q GaN
! !! !
+ + + + + + + + + + +
( ) ( )
( ) , , x GaN AlGaN
P Q Q
= +
includes the contribution of spontaneous and piezo-electric contributions
Q
Fig 7b
In
x
Ga
1-x
N
+ + + + + + + + + + +
+ + + + + + + + + + +
, Q InGaN
, Q InGaN
+
, Q GaN
, Q GaN
! !! !
( ) ( )
( ) , , x InGaN GaN
P Q Q
= +
includes the contribution of spontaneous and piezo-electric contributions
Q
Fig 8a
GaN AlGaN
s
p
2
( ) Q cm
s
n
2
( ) Q cm
v
E
, Eg GaN
l ,
Maximum Dipole Moment
A GaN g GaN v
V E E + = !
Fig 8b
E
F
GaN AlGaN
E
DD
DD
N
+
2
( ) Q cm
s
n
Fig 9
V
ds
(V)
I
d
(
5
m
A
)
DC
AC
Load line
Dispersion
Fig 10
Lg
AlGaN
GATE
Electrons in
Surface States
GaN
Source
Drain
Depletion of 2DEG
caused by occupied
surface states
Fig 11
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
0
20
40
60
80
100
120
140
160
Pout
Gain
PAE
Id
P
in
(dB)
P
o
u
t
(
d
B
)
,
G
a
i
n
(
d
B
)
,
P
A
E
(
%
)
I
d
(
m
A
)
P
out
= 10.3 W/mm
PAE= 41.6%
f=8GHz,
Tuned for Power
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
0
20
40
60
80
100
120
140
160
Pout
Gain
PAE
Id
P
in
(dB)
P
o
u
t
(
d
B
)
,
G
a
i
n
(
d
B
)
,
P
A
E
(
%
)
I
d
(
m
A
)
P
out
= 10.3 W/mm
PAE= 42%
f=8GHz,
Tuned for Power
Fig 12
0
1
2
3
4
5
6
7
8
9
10
-5 0 5 10 15 20 25
-30
-20
-10
0
10
20
30
40
50
60
70
P
in
(dB)
P
o
u
t
(
W
/
m
m
)
f=8GHz
P
A
E
(
%
)
I ncreasing V
ds
PAE; P
out
0
1
2
3
4
5
6
7
8
9
10
-5 0 5 10 15 20 25
-30
-20
-10
0
10
20
30
40
50
60
70
P
in
(dB)
P
o
u
t
(
W
/
m
m
)
f=8GHz
P
A
E
(
%
)
I ncreasing V
ds
PAE; P
out
Fig 13
Fig 14
V
ds
(V/divsion)
I
d
(
A
/
d
i
v
s
i
o
n
)
V
g
start: +2V, Step: -2 V
Fig 15
0
5
10
15
20
25
30
35
40
18 22 26 30 34 38 42
10
15
20
25
30
35
40
45
50
Gain
DE
PAE
Pout
P
in
(dBm)
G
a
i
n
(
d
B
)
,
D
E
(
%
)
,
P
A
E
(
%
)
P
o
u
t
(
d
B
m
)
0
5
10
15
20
25
30
35
40
18 22 26 30 34 38 42
10
15
20
25
30
35
40
45
50
Gain
DE
PAE
Pout
P
in
(dBm)
G
a
i
n
(
d
B
)
,
D
E
(
%
)
,
P
A
E
(
%
)
P
o
u
t
(
d
B
m
)
Fig 16