Pre lab 9

Sammit Nene, EECS 423

1. We use a temperature of 50 degrees C for the aluminium etch instead of room temperature
because the etch rate is higher at 50 degrees compared to at room temperature.

2. MSDS data sheet- aluminum etch precautions:

Skin exposure can cause burns. Longer exposure may cause permanent damage.
Eyes contact is corrosive possibly resulting in permanent eye damage.
Inhalation is irritating to the nose, mouth, throat and lungs. It may cause burns to the
respiratory tract with the production of lung edema.
Burns can occur to the entire gastrointestinal tract if ingested.
[source: http://www51.honeywell.com/sm/em/common/documents/2.6_usa_msds_60.pdf]

3. Lithography process to be used in the lab:
This lithography step will be used to define the aluminium source/drain and gate contact pads.
We first start off with: Photoresist coating ( 2850 RPM for 30 seconds) followed by soft bake at
115 C for 90 s.
Aligning and exposing the wafers using HARD contact.
Post Exposure bake: Recipe used 90 sec, 115 C bake and 300 DEV 30 sec.
Photoresist residue removed in the plasma asher. Power level: 150 watts
Aluminium is etched: Etch Al in Transene aluminium at 50 C until a clear pattern has been
developed on the front of the wafer.
Wafer is rinsed in DI water for 3 min
Last step is strip resist which is done in the PRS 2000 tank for 5 minutes.