_

1.

. CD, DVD
,

, ,

MOS Bipolar

. (SiC) .

CPU .

, (GaAs) (InP)

, , (Si)

(GaAs)

Fig. 1. .

14 5, 2011 10

| | 35

365-520, 400-450

2.

.
,

.
.

1960

, Table 1

. 1986

, , ,

1)

2)

1989 p-

, ,

Breakthrough, 1993

. Fig. 2

Isamu Akasaki

Ga N

Table 1 .

3.

. GaN,
AlN InN (Mixed Crystal

Si, SiC, GaAs, InP

Semiconductors)

Si, SiC, GaAs, InP

. (Fig. 1 )

200

1500

(Homoepitaxial growth) . GaN

210-550 342-488

, GaN

Table 1.

(eV)

(V-1s-1)

(MV-1)

(107 s-1)

(W-1K-1)

36 | |

Si

SiC-4H

Diamond

GaAs

1.0

3.3

5.5

1.4

1500

1000

1800

0.3

3.0

1.0
1.5

GaN

AlN

InN

3.4

6.2

0.6~0.7

8500

1200

4000

4.0

0.4

3.3

2.0

2.0

2.5

2.0

2.5

2.0

4.2

4.9

20.9

0.5

2.1

2.9

0.8

Table 2. GaN
Type A

Heteroepitaxial
Type B

Type C

(W)

1000

Homoepitaxial
Type D

100

10

:~109/ :~10E9/ :c
: c : c High Price

UV~Green
Blue-LD: Blue LD:

0.1

0.1

10
100
((GHz)

Polar/Non-polar/
Semi-polar
High Price

1000

Epitaxial Lateral Overgrowth(ELO)

Fig. 2. / .

10 /cm
6). (Table 2 Type

.
GaN

2) Type B GaAs

. GaN

GaN GaN

SiC GaN

10 /cm GaN

. (Table 2

Type C). Type C GaN 10 /cm

(Heteroepitaxial growth) . Table 2

500

GaN

, Blu-ray Disk (405

7,8)

9). Type C GaN

) .

LED

3)

.
4,5)

, .

C. C

GaN
GaN

.
.

1000

, HFET(Hetero-Junction

. GaN

Field Effect Transistor) Type A

10 /cm

, GHz

. Type

A UV LED,

. ,

(30-100GHz)

14 5, 2011 10

| | 37

Table 3. Melting Temperatures and Pressures of Most

Typical Semiconductor Materials

temperature()

3000

Si
GaAs
GaP
GaN
AlN
InN

2000

Melting Temperature ()
1400
1240
1465
2225
3200
1900

Pressure (atm)
<1
2
30
60,000
>100
60000

1000

.
0

4
6
pressure(GPa)

10

Fig. 3. - GaN .

c- ,
m a
11)

.
GaN

(Table 5) , 1999 Advanced Technology Materials

Inc(ATMI) HVPE GaN

Laser GaN

Si /

, 2000

, Si

Laser 2 GaN

. GaN

2003
,

4. GaN

GaAs GaN
. Ti-

Fig. 3 Table 3 GaN

Void Assited Separation(VAS)

Si (melt) GaN

2200 60,000

ELO Self-Separaation

GaN ,

. 2007 Yao

(Liquid phase growth

self-separation Ex-situ

Melt ) .

In-situ self-separation

GaN Table 4 -

. Yao HVPE

NH4Cl

2011

GaN -

GaN (Void)

. GaAs GaCl

NH 3 GaN

, ,

5~6

10 /cm GaN
, , ,

38 | |

GaN/Sapphire Fig. 4 .
GaN

. GaN

Table 4. Bulk GaN

-
5~6
10 / GaN
Seed

- C ,
non-polar (m, a)
(5x10)
1~2, ~1500 ,
Ga

Ammonothermal 1~2, 4~600

(NH3) GaN ,
(Na,K )Ga
Flux
(~100
, ~800) GaN
1200 Ga NH3
GaN

(< 1)
GaN1500,

6, 2200

GaN
1~2, ~1500 ,
Ga
GaN

1~2, 4~600
Ammonothermal (NH3) GaN ,
Seed
(Na,K )Ga
Flux
(~100
, ~800) GaN

, polar, non-polar, semi-poler

.
GaN Ammonotheral
. Ammonothermal 400~600,
1000~2,500 (super
critical ammonia) GaN
18)

GaN . Ammonothermal
2 GaN ,
UCSB GaN
. GaN
-
3

(a)
(VAS-2003)

10 /cm
.

, ~800
Ga
Na, K, Li
GaN
19,20)

: Vapor Phase Epitaxy

: High Presure Solution Method
: Flux Method

(10 /cm

. 2 GaN
21)

, 4
.

(b)
(FACLEO-2005)

(c) Yao
(2007)

Fig. 4. GaN/Sapphire . (a) VAS(Void Assisted Separation), (b) FACELO(Facet-Controlled Epitaxial Lateral Overgrwoth), and (c), Yoa, NH3Cl void .

14 5, 2011 10

| | 39

Table 5. HVPE GaN

Year

Inventor Growth process

Advanced
1999 Technology HVPE-GaN
Materials
2000 Samsung HVPE-GaN

Fig. 5. GaN .
( 2011 10 12~15, )

GaN 2009
Ammonothermal GaN

Laser
lift-off

12

13
GaAs
2001 Sumitomo SiO2 (0.1
m) Photo-lithography HVPE-GaN wet-etching 7
MOVPE-GaN growth Ti metal deposition
2003 Hitachi
14
HVPE-GaN
MOVPE-GaN SiO2 Deposition Photolithography MOVPE-GaN SiO2 deposition
15
2005 Sumitomo
Photo-lithography MOVPE-GaN HVPE
-GaN growth
Tohoku
2007
16
Univ. HVPE-GaN
MOCVD-GaN SiO2 deposition Ni-layer
Industrial deposition Annealing of Ni-layer Dry
2009 Technology etching (RIE) Ni, SiO2 etching SiO2
17
Institute deposition SiO2 Dry etching (RIE)
HVPE-GaN
Self-separation

5. GaN

Separation
technique Ref.

HVPE GaN

1998 HVPE GaN

Table 6 . 1998

Table 6

. Ioffe

, ,

HVPE

, , ,

HVPE ,

2000 GaN

HVPE GaN

. 2002

1990

HVPE GaN (
) .

2003 1 GaN
2005 2 GaN , 2009
3, 2011 4 GaN
(Fig. 5).
LG 2000 GaN
, 2003 GaN , LG
HVPE
, 2004 .
LG, , , GaN tech
,
, HVPE

40 | |

Table 6. HVPE GaN

1998 ,
2002
2009
2002
2003 1 ,
2005 2
2011 4
2000 , 2003 ,
LG
(2004 )
2004 , 2006
LG
(GaN on Si by MOCVD )

2004 , 2007

2008
GaN Tech
2008 , 2010

2008

2007

2009

2011

, 2000 LG

Type Conduction in Mg-Doped GaN Treated with Low-

Energy Electron Beam Irradiation, Jpn. J. Appl. Phys.,

(2000),

28 L2112-4 (1989).

(2001), ,

3. S. D. Lester, F. A. Fonce, M.G. Craford, and D.A.

, (2002), (2004

Steigerwald, High Dislocation Densities in High Effi-

), (2005),

ciency GaN Based Light-emitting Diode, Appl. Phys.

(2006), (2008),

Lett., 66 1249-51 (1995).

(2011)

4. H. Amano, Development of Short Wavelength

. GaN

Visible/Ultraviolet Light-Emitting Devices and

HVPE

Semiconductor Heteroepitaxy, Oyo Butsuri, 71 1329-

LED

34 (2002).

5. M. Takeya, et al., Relationship between Dislocation

UV HVPE

Density and Reliability in GaN-based Semiconductor

AlN AlGaN

Lasers, Proceedings of the 63rd Autumn Joint Meeting

of the Japan Society of Applied Physics, 27a-YH11(2002).

6.

6. A.Usui, H. Sunakawa, A. Sakai, and A.A. Yamaguchi,

Thick GaN Epitaxial Growth with Low Dislocation

Density by Hydride Vapor Phase Epitaxy, Jpn. J. Appl.

Phys., 36 L899-92 (1997).

7. K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushita,

. GaN

H. Kumura, H. Kasai, Y. Kumagai, and A. Koukisu,

, /

Preparation of Large Freestanding GaN Substrates by

ammonothermal

Hydride Vapor Phase Epitaxy Using GaAs as a Starting

LED

Substrate, Jpn. J. Appl. Phys., 40 L140-143 (2001).

8. Y.Oshima, T.Eri, M.Shibata, H.Sunakawa, K.Kobayashi,

T.Ichihashi, and A.Usui, Preparation of Freestanding

GaN Wafers by Hydride Vapor Phase Epitaxy with

Void-Assisted Separation, Jpn. J. Appl. Phys., 42 L1

(2003).

1. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda,

Metalorganic Vapor Phase Epitaxial Growth of a High
Quality GaN Film Using an AlN Buffer Layer, Appl.
Phys. Lett., 48 353-5 (1986).
2. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, P-

9. Motoki et al., Low Dislocation GaN Crystal by

Advanced-DEEP Method, Japan Society for the
Promotion of Science, No. 161 Committee, Materials
of the 54th Workshop 5(2007). (Japanese)
10. J. Karpinski J. Jun and S. Porowski, Equilibrium Pressure of N2 Over GaN and High Pressure Solution
Growth of GaN, J. Cryst. Growth., 66 1 (1984).

14 5, 2011 10

| | 41

11. K. Fujito, K. Kiyomi, T. Mochizuki, H. Oota, H.

Namita, S. Nagao, and I. Fujimura, High-Quality
Nonpolar m-Plane GaN Substrate Grown by HVPE,
Physca Status Solidi (a), 25 [5] 1056-9 (2008).
12. MK Kelly, R. P. Vaudo, V. M. Phanse, L. Grgens,

separated Hydride Vapor-phase Epitaxy, Appl. Phys.

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O. Ambacher, and M. Stutzmann, Large free-stand-

19. H. Yamane, M. Shimada, S. J. Clarke, and F. J.

ing GaN Substrates by Hydride Vapor Phase Epitaxy

DiSalvo, Preparation of GaN Single Crystals Using

and Laser-induced Liftoff, Jpn. J. Appl. Phys., Part

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2 38 L217 (1999).
13. Sung S. Park, Il-W. Park, and S. H. Choh, FreeStanding GaN Substrates by Hydride Vapor Phaose
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20. S. Sarayama and H. Iwata, High Quality Crystal

Growth of Gallium Nitride by Flux Method, Ricoh
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14. Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, K.

M. Yohsimura, Y. Mori, T. Sasaki, and Y. Kitaoka,

Obayashi, T. Ichihashi, and A. Usui, Preparation of

Growth of a Two-Inch GaN Single Crystal Substrate

Freestanding GaN Wafers by Hydride Vapor Phase

Using the Na Flux Method, Jpn. J.Appl. Phys., 45

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Phys., 42 L1 -3 (2003).
15. S. Bohyama, H. Miyake, K. Kiramatsu, Y. Tsuchida,
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42 | |

1993
1993
2007