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1/7
Nhn xt:
Khi ni thu nn h, c tuyn c dng nh c tuyn ca diode khi phn cc
thun.
in th ngng (knee voltage) ca c tuyn gim khi VCB tng.
2/7
Vng ngng: ni nn pht phn cc nghch (IE=0), ni thu nn phn cc nghch. Trong
vng ny transistor khng hot ng.
Vng bo ho: ni pht nn phn cc thun, ni thu nn phn cc thun. Trong cc ng
dng c bit, transistor mi c phn cc trong vng ny.
Mc theo kiu cc pht chung.
3/7
c tuyn ng vo:
c tuyn ng ra:
Biu din dng in cc thu IC theo in th ng ra VCE vi dng in ng vo IB c
chn lm thng s.
Dng c tuyn nh sau:
4/7
5/7
i vi transistor Si, vng hot ng c VBE nm trong khong 0,5-0,8V. Trong vng
ny, c tuyn truyn c dng hm m. vng bo ho, dng IC tng nhanh khi VBE
thay i. vng ngng, khi VBE cn nh, dng r qua transistor ICES rt nh, thng
xp x ICBO.
Ngay c trong vng hot ng, khi VBE thay i mt lng nh (t dng IB thy i)
th dng IC thay i mt lng kh ln. V th, trong cc ng dng, ngi ta dng in
th cc nn VBE lm in th iu khin v cc B cn gi l cc khin.
nh hng ca nhit ln cc c tuyn ca BJT.
Nh ta thy, cc tnh cht in ca cht bn dn u thay i theo nhit . Do ,
cc c tuyn ca BJT u thay i khi nhit thay i.
Khi nhit tng, cc dng in r ca cc thu (ICBO,Iceo, ICES) u tng.
Khi nhit tng, cc li in th DC, DC cng tng.
Khi nhit tng, in th phn cc thun (in th ngng) ni nn pht VBE
gim. Thng thng, VBE gim 2,2mV khi nhit tng 10C.
6/7
Dng in r ICBO tng gp i khi nhit tng 80C trong transistor Si.
7/7