[Tm hiu v cng nghip bn dn] [K 1] Nhng khi nim cn bn

Transistor bn dn gm 2 loi: PMOS v NMOS. Tu theo gi tr ca in p m chng c

quy nh trng thi bt hay tt, tng ng vi gi tr 1 hay 0 trong h nh phn.

Cc thut ng l thuyt
Hole (h th): mt khi nim trong vt l nhm ch mt i tng c in tch dng (+)
ng bng in tch ca electron, ch khc l ngc du. Trn thc t, h th c to ra
khi mt electron ho tr b bt ra khi lin kt (v mt l do ca n no y nh nhit ,
nh sng tu loi bn dn).



Hu qu li l electron i chi mt, trong vt cht v t nhin l cn bng v in, v
tr trng s mang in dng, n c gi l h th. Nhng nt c bit l h th cng
c kh nng i chi tng t electron. ng hn, l v cc electron c ci s thch ng
ni ny trng ni n, thy nh kia trng th l nhy v. Vy l v tr ca electron (th
2) tr thnh h th (th 2). Ri li electron khc tng t

Tng hp li, nu c n electron i hoang th s c n h th ra i. n electron ny di chuyn
c hng s to thnh mt dng in, cng nh n h th kia. Electron v h th l 2 thnh
phn dn in c bn trong bn dn.

N type semiconductor (bn dn loi N): kim ph bin nht trong cng nghip bn dn l
Silicon (Si). Nguyn t Si c 4 electron ho tr to thnh mng lin kt vi 4 nguyn t Si
khc. Mi th s rt bnh thng khng chuyn g nu ton b mng lin kt ny u l Si.
Nhng khi ngi ta xo ng i cht bng cch vt vi nguyn t Arsenic (As) vo
mng li ny, iu g xy ra?



Nguyn t As c 5 electron ho tr, khi to lin kt vi 4 nguyn t Si khc vn cn 1
electron ho tr b v. Electron b v khng ngi thm hi ny s dn n mng lin
kt ny b tha in m. Mng li ny c gi l bn dn loi N (negative).

P type semiconductor (bn dn loi P): tng t vi As trn, nhng bng mt nguyn t
c 3 electron ho tr v d nh Indium (In). Mng lin kt vn to thnh, nhng b h v
tr ca nguyn t In, tc l chng ta c c h th. Ni cch khc l mng li ny tha
in dng v gi l bn dn loi P (Positive).



Doped semiconductor (bn dn pha): l 2 loi bn dn trn, chng l cc cht bn dn
thun c pha cc nguyn t loi P hay loi N tu theo mc ch s dng.


Kin trc c bn ca mt MOSFET
NMOS transistor (hay transistor loi N): vi 2 cc ngun (source) v mng (drain) c pha
thm cc ion dng n++ trong khi phn nn (substrate) c thnh phn dn in trong knh
(channel) l cc electron v cc cng (gate) thuc loi n.

Khi c mt in p cao c t vo cng, cng s xut hin mt in trng, in trng
ny s d d cc electron v mt pha (nhng cn b ngn bi 1 lp cch in).

Lc ny in tch (c sn) t ngun hoc mng s bc trn chic cu phao electron
sang phn cn li ca transistor. Ni cch khc, cng chnh l cng tc ng/ngt mch
trong tng transistor mt.

PMOS transistor (hay transistor loi P): ngc vi transistor loi N, bn ch cn hon v cc
phn p v n. Thnh phn dn in trong knh l cc h th.

Ngc vi NMOS, PMOS dn in khi khng c in (>< ) nm cng! Khi mt in p
(m) c t vo cng, chic "cu phao" b ph v thnh dng in b ngt. Tc c ch
dn in ca ca PMOS ngc hon ton NMOS.


Gate dielectric (in mi cng): v sao cc in tch ch t tp c trong knh m khng
lt qua bn kia cng trung ho in tch? l lp cch in nm ngn sng cm ch
gia 2 thnh phn trn. l mt lp kh mng, hin nay thng lm bng Silicon Dioxide
(SiO2). Tuy vy n ang mng n mc c th xuyn qua c v l vn m ngi
ta phi ngh n cc vt liu thay th nh HKMG
Cc thut ng thc t
Threshold voltage (in p ngng): trong mch transistor hu nh lc no cng c in
tch, vn l bao nhiu th cho mt dng chy qua, nm na, cn bao nhiu lng
thay i cht ca s vt. V d bn cn c bao nhiu tin mua c mt chic xe (p
cao) v thu nhp di mc bao nhiu bn b xp vo din ngho (p thp).

Vi kch thc cc transistor ngy cng nh xung th in p ny cng gim xung, gip
chng tit kim in hn m hiu sut hot ng v c bn vn c m bo.

Leakage curremt (s r in): cn nh in mi cng? Nhim v ca n l ngn ch b
nh ng Hai leo qua nh b Ba, nhng vn phi mng hng thm con gi b Ba
vn n c mi thng b con ng Hai. Khc mc xy ra khi gi t ngy cng tng v c
2 nh u gim bt khng gian sng ca mnh kinh doanh nh tr. Kt qu l bc tng
ngn cch ngy mt mng hn v n lc no th chc nng ngn sng cm ch ca
n bin mt! Hin tng ny c gi l s r in (gia cc cng v knh dn).


Dng in r () thp v lp in mi (trng) dy



Depleted region (vng suy thoi): khi lp in mi cng tr nn qu a nhiu khi lp ny
mng i
mng, trong qu trnh hot ng, mt lng vt cht dn in thuc cc cng t tp pha
trn lp in mi ny v b bin tnh. Chng to ra mt lp in mi mi v lm gim nh
hng ca in trng i vi knh dn bn di. Lp ny chnh l vng suy thoi.

Sc nghing l vng thoi ho
H qu l hiu sut dn in ca transistor b km i (thp hn so vi thit k ban u). Khi
cn tng in p vo cc cng v iu d hiu l lng in tiu th cng tng ln cng
vi nhit nng to ra. y l l do v sao ngi ta khng th dng tip Silicon trong cc cc
cng cho cc transistor thp hn mc 65nm c mi v hiu sut hot ng c th cn
km hn c cc transistor c!


H qu "lu di" cuc vic "leo tng"
Metal gate (cng kim loi): chm dt hin tng thoi ho (Depletion) trn, ngi ta
ngh n cc cht dn in thun nh kim loi, tc l khng c Oxide y khi b bin
tnh. Tu theo l PMOS hay NMOS transistor m ta s c loi kim loi ph hp. Nhng nhn
chung, vic phi dng kim loi s khin chi ph sn xut tng ln i cht v Silicon Dioxide
(ct), d sao, vn r v phong ph hn rt nhiu



High-k dielectric (in mi tr cao): l cc vt liu c hng s in mi (k) ln hn 3,9 (vi
n v chun l ca SiO2). Ngi ta cn cc vt liu to ra cc in mi cng mi c kh
nng cch in tt hn so vi in mi cng truyn thng lm bng SiO2.

Mt s ng c vin c ngh n nh Hafnium Oxide (HfO2) vi k ~ 25, Hafnium
Silicate (HfSiO4) vi k = 15 ~ 18, Tantalum Pentoxide (Ta2O5) vi k ~ 25, Titanium Oxide
(TiO3) vi k = 20 ~ 85 nhng mt s thiu n nh v nhit ng hc nn khng
c chn. Theo nghin cu ca Intel th cc in mi nn Hafnium c v p ng c cc
yu cu ra.


Mu xanh l cng kim loi v mu vng l lp in mi mi
Low-k dielectric (in mi tr thp): ngc vi nh ngha trn, khi k < 3,9. Khc vi in
mi tr cao dng trong cc transistor, in mi tr thp thng dng ngn cch mi dn
in bng kim loi, nhm gim thiu hin tng mc ni in dung (capacitive coupling) m
h qu c th s rt tai hi vi ton mch in
//Cn na
//Ngun: vOzExpress