Professional Documents
Culture Documents
Package Dimensions
Description
The LTE-3271T/LTE-3371T/LTE-3217TL/LTE-3371TL are
high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in plastic end looking packages.
They provide a broad range of intensity selection and
are specified under pulsed drive up to 2 Amps.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is 0.25mm (.010") unless otherwise noted.
3. Protruded resin under flange is 1.5mm (.059") max.
4. Lead spacing is measured where the leads emerge from
the package.
5. Specifications are subject to change without notice.
s pulse)
Maximum Rating
Unit
150
mW
100
mA
Reverse Voltage
-40
to +85
-55
to +100
260
for 5 Seconds
10-14
E3271t.p65
Page 14
2000/7/11, W 11:54
Adobe PageMaker 6.5C/Win
Symbol
Part No.
Unit
Test
Condition
mW/cm 2
IF=20mA
mW/sr
IF=20mA
940
nm
IF=20mA
50
nm
IF=20mA
Min.
Typ.
0.80
1.4
0.90
1.6
10.5
6.77
12
Max.
LTE-3271T
LTE-3271TL
Ee
LTE-3371T
LTE-3371TL
LTE-3271T
LTE-3271TL
Ie
Radiant Intensity
LTE-3371T
LTE-3371TL
LTE-3271T
Peak
LTE-3271TL
LTE-3371T
LTE-3371TL
Forward Voltage
LTE-3271TL
VF
1.25
1.6
IF=50mA
1.65
2.1
IF=250mA
LTE-3371T
LTE-3371TL
LTE-3271T
Forward Voltage
LTE-3271TL
VF
LTE-3371T
INFRARED
PRODUCTS
LTE-3271T
LTE-3371TL
Reverse Current
IR
100
LTE-3271T
/2
VR=5V
50
LTE-3271TL
LTE-3371T
deg
40
LTE-3371TL
Note: *Ee is a measurement of the average radiant incidence upon a sensing area 1cm 2 in perpendicular to and
centered on the mechanical axis of the lens and 26.8mm from lens.
10-15
E3271t.p65
Page 15
2000/7/11, W 11:55
Adobe PageMaker 6.5C/Win
10-16