HBK Tp HCM-Khoa -T

BMT
GVPT: H Trung M
Mn hc: Dng c bn dn

Chng 2
Di nng lng v
nng ht dn
cn bng nhit

Ni dung
1. Vt liu bn dn
2. Cu trc tinh th c bn
3. Lin kt ha tr
4. Di nng lng
5. Nng ht dn ni ti
6. Cc cht donor v acceptor.
7. Nng ht dn trong bn dn loi N v P
2

2.1 Vt liu bn dn

Control of Conductivity is the Key to

Modern Electronic Devices

Conductivity, , is the ease with which a given

material conducts electricity.
Ohms Law: V=IR or J=E where J is current density
and E is electric field.




Metals: High conductivity

Insulators: Low Conductivity
Semiconductors: Conductivity can be varied by several
orders of magnitude.

It is the ability to control conductivity that make

semiconductors useful as current/voltage control
elements. Current/Voltage control is the key to
switches (digital logic including microprocessors
etc), amplifiers, LEDs, LASERs, photodetectors,
etc...

Classifications of Electronic Materials

Electrical/Computer engineers like to classify

materials based on electrical behavior (insulating,
semi-insulating, and metals).
Materials Engineers/Scientists classify materials
based on bond type (covalent, ionic, metallic, or van
der Waals), or structure (crystalline, polycrystalline,
amorphous, etc...).
In 20-50 years, EEs may not be using
semiconductors at all!! Polymers or bio-electronics
may replace them! However the materials science
will be the same!
5

Material Classifications based on Bonding Method

Bonds can be classified as metallic, Ionic,

Covalent, and van der Waals.

Material Classifications based on Bonding Method

Material Classifications based on Crystal Structure

Amorphous Materials
No discernible long range atomic order (no detectable crystal structure).
Examples are silicon dioxide (SiO2), amorphous-Si, silicon nitride
(Si3N4), and others. Though usually thought of as less perfect than
crystalline materials, this class of materials is extremely useful.
Polycrystalline Materials
Material consisting of several domains of crystalline material. Each
domain can be oriented differently than other domains. However, within a
single domain, the material is crystalline. The size of the domains may
range from cubic nanometers to several cubic centimeters. Many
semiconductors are polycrystalline as are most metals.
Crystalline Materials
Crystalline materials are characterized by an atomic symmetry that repeats
spatially. The shape of the unit cell depends on the bonding of the
material. The most common unit cell structures are diamond, zincblende
(a derivative of the diamond structure), hexagonal, and rock salt (simple
cubic).

Material Classifications based on Crystal Structure

Conductivities for insulators,

semiconductors, and conductors.

10

Element Semiconductors
(Cc cht bn dn nguyn t)
Bng phn loi tun hon ca vt liu bn dn

11

Compound Semiconductors
(Cc cht bn dn hn hp)

Nhng nm gn y ngi ta s dng nhiu cc cht

bn dn hn hp trong nhiu loi dng c bn dn.
C cc cht bn dn hn hp t 2 nguyn t (nh
hp), 3 nguyn t (tam hp) v 4 nguyn t (t hp).
Nhiu cht bn dn c cc tnh cht in v quang
khc vi Silicon. c bit l GaAs c dng lm
vt liu chnh ch to cc dng c trong cc ng
dng quang in t v chuyn mch tc cao

12

Cc cht bn dn nguyn t v hn hp

13

Cc cht bn dn nguyn t v hn hp (tt)

14

2.2 Cu trc tinh th c bn

15

Khi nim mng v t bo n v

Ta s nghin cu vt liu bn dn n tinh

th, m trong cc nguyn t c sp xp
tun hon trong khng gian.S sp xp tun
hon ca cc nguyn t trong tinh th c
gi l mng (lattice).
Trong tinh th, nguyn t s dao ng (do
nhit) quanh 1 v tr c nh.
Vi bn dn cho trc, c t bo n v (unit
cell) i din cho ton b mng [tinh th];
bng cch lp li t bo n v trong tinh th
ta c ton b mng tinh th.
16

T bo n v

T bo n v c th c c trng bng vector R

(c to thnh t cc vector a, b, c [cc vector ny
khng nht thit phi vung gc vi nhau v chiu
di ca chng c th bng hay khng bng nhau] v
cc s nguyn m, n v p)
R=ma+nb+pc
Cc vector a, b, v c c gi l cc hng s mng
(lattice constants).

17

Mt s t bo n v tinh th lp phng c bn

Cc t bo n v khc nhau da trn cc t bo n v lp

phng: t bo n v lp phng n gin (SC), t bo n v
lp phng tp trung bn trong (BCC), v t bo n v lp
phng tp trung b mt (FCC)

18

Cu trc mng tinh th kim cng

Silicon v germanium c mt cu trc tinh th kim

cng.
Cu trc silicon thuc v lp nhng t bo n v lp
phng tp trung b mt. T bo n v silicon gm c
tm nguyn t silicon.
Cu trc c th c nhn thy nh hai mng tinh th
con (b mt) thm nhp nhau vi mt mng con c
i ch bi mt mng con khc bng khong cch
dc theo ng cho bn trong khi lp phng
Hu ht nhng cht bn dn III/V tng trng theo
mng tinh th zincblende, m ng nht vi mt mng
tinh th kim cng ch c iu mt trong s nhng
mng tinh th con t bo lp phng tp trung b mt
c nguyn t gallium (Ga) v nhng nguyn t arsenic
(As) khc.
19

Cu trc mng tinh th kim cng (tt)

20

Cc mt phng tinh th v ch s Miller

Cc tnh cht tinh th theo nhng mt phng khc

nhau th khc nhau v nhng tnh cht in, nhit, v
c c th ph thuc vo hng tinh th.
Cc ch s [Miller] dng nh ngha nhng mt
phng trong tinh th.
Th d: Xc nh mt phng tinh th
Mt phng giao vi cc trc ta ti a, 3a, v 2a.
Ly nghch o ca cc ta ny ta c 1, 1/3 v
1/2. Ba s nguyn nh nht c cc t s 6, 2 v 3.
Nh vy mt phng ny c th c xem nh mt
phng (623).

21

Cc mt phng tinh th v ch s Miller (tt)

Cc qui c nh ngha ch s Miller:

(hkl) : mt mt phng

[hkl] : hng tinh th l im trong mng tinh th gn
gc ta nht theo hng mong mun.

{hkl} : h cc mt phng tng ng i xng

22

Cc mt phng tinh th v ch s Miller (tt)

Khi c ta m th ghi s dng tng ng v c

ng gch trn con s, th d hng tinh th c ta
-1,-1,1 th ngi ta ghi l .

Cc ch s Miller thng gp:

(a) cc mt phng tinh th, v (b) cc vector hng

23

Cc mt phng tinh th v ch s Miller (tt)

Trong cc mng tinh th lp phng, hng [hkl] vung gc
vi mt phng (hkl).
Th d: h mt phng {100} l:

Th d mt s hng tinh th

24

2.3 Cc lin kt ha tr
(Valence bonds)

25

Lin kt ng ha tr v lin kt ion

Trong cc dng c bn dn c th gp cc lin
kt sau:



Lin kt ng ha tr (covalent bonding)

Lin kt ion (ionic bonding)

Trong bn dn nguyn t dng cc lin kt ng ha

tr; cn trong bn dn hn hp th s dng c lin kt
ng ha tr v lin kt ion.

26

The periodic table

8A

1A

2A

Li

Be

3A

4A

5A

6A

7A

He

Na

Mg

Ne

Ca

2B

Al

Si

Cl

Ar

Rb

Sr

Zn

Ga

Ge

As

Se

Br

Kr

Cs

Ba

Cd

In

Sn

Sb

Te

Xe

Fr

Rd

Hg

Ti

Pb

Bi

Po

At

Rn

Groups 3B,4B,5B,6B
7B,8B,1B lie in here

A section of the periodic table

Lin k
kt ion (Ionic bonding)
bonding)

Lin kt ion do lc ht tnh in gia cc ion tch in dng

v m (gia 1A v 7A).

Qu trnh ny dn n chuyn in t v to thnh cc ion c tch

in; ion tch in dng do nguyn t mt in t v ion tch
in m do nguyn t c thm in t.

Tt c cc hn hp ion l cht rn n tinh th nhit phng.

NaCl v CsCl l cc th d tiu biu cho lin kt ion.

Cc tinh th ion th c im nng chy cao, rn dn v c th ha

tan c trong cc cht lng thng thng.
28

Ionic bonding
The metallic elements have only up to the valence electrons
in their outer shell will lose their electrons and become positive
ions, whereas electronegative elements tend to acquire
additional electrons to complete their octed and become
negative ions, or anions.

Na

Cl
29

Ionic bonding

This typical curve has a

minimum at equilibrium
distance R0
R > R0 ;
 the potential increases
gradually, approaching 0
as R
 the force is attractive
R < R0;
 the potential increases
very rapidly, approaching
at small radius.
 the force is repulsive

V(R)

Repulsive

R0

R
Attractive

30

Lin k
kt
ng h
haa tr
(Covalent bonding)
bonding)
Cc cht bn dn nguyn t Si, Ge v kim
cng c lin kt bng c ch ny v chng
thun ng ha tr.
Lin kt ny l do dng chung cc in t.(mi
cp in t to nn lin kt ng ha tr)
Cc cht rn c lin kt ng ha tr th c im
nng chy cao, rn v khng ha tan trong cc
cht lng thng thng.
Cc bn dn hn hp s dng c cc lin kt
31
ng ha tr v lin kt ion.

Comparison of Ionic and Covalent Bonding

32

Th d lin kt ng ha tr vi cc
cht c 4 in t ha tr

33

- nhit thp cc in t c rng buc theo mng

tinh th t din tng ng.
- Khi nhit cao hn th cc dao ng nhit s lm
gy cc lin kt ng ha tr.

34

2.4 Cc di nng lng

(Energy bands)

35

Nhng mc nng lng ca 1

nguyn t c cch ly

hiu nhng tnh cht ca nhng cht bn dn, ta cn phi hiu

nhng tnh cht ca nhng nguyn t to thnh chng.
Theo m hnh ca Bohr th nguyn t gm c mt li, m v c
bn cha ton b khi lng ca nguyn t. V gn nh khng c
khi lng. Hu nh mi khi lng c tp trung trong li c
ng knh nh 10-15 m , khi so snh vi ng knh v 10-10 m
= 0.1 nm = 1(ngstrom).
Li gm c nhng neutron v nhng proton. Li mang in tch
dng. V (v in t) mang in tch m v c nhng in t trn
cc qu o trong v. Nhng ton b nguyn t th khng c in
tch hay trung ha in.
Nhng in t nh nhng v tinh. Chng quay xung quanh li trn
qu o nht nh. Nhng in t c lm n nh trn nhng
qu o ca chng do s cn bng ca nhng lc ly tm v
Coulomb.
36

Nguyn t Hydrogen

Do s cn bng gia lc ly tm v lc
tnh in, tn ti mt lin h vn tc in
t v bn knh ca li. Vn tc ca mi
in t lin h vi bn knh qu o vi
tm li. V mt in t c th c nhng
nng lng khc nhau, n c th c
nhng bn knh khc nhau n li ca
nguyn t. Tuy nhin, m hnh c nhng
vn sau:


Theo in ng hc c in, ht c tch in

trn qu o dn n to thnh mt lng cc
t m bc x nng lng. Do mt mt nng
lng, ht s b ht nhiu hn vo li, m dn
n ng i nh hnh xon c. Cui cng
ht s ri vo li ca nguyn t.
37

Nguyn t Hydrogen (tt)

gii quyt vn ny, ng Bohr ngh tin sau: cc

mc nng lng ca nguyn t v bn knh qu o c
lng t ha. Cc mc nng lng c cho php ca nguyn
t Hydrogen c cho bi:

vi EB l nng lng Bohr v n l s lng t nguyn tc

(principle quantum number). Nng lng Bohr c cho bi:

vi aB l bn knh Bohr, q l in tch in t (l in tch c

bn) v 0 l hng s in mi chn khng. Nhng nng
lng in t gia nhng mc nng lng En khng c cho
php.
38

Nguyn t Hydrogen (tt)

Khi nhng nng lng in t c lng t ha v nhng bn

knh ca nhng mc nng lng (energy levels) cng c lng
t ha.
Nhng mc nng lng ca mt nguyn t l duy nht.
S to thnh hay tch ra ca nhng mc nng lng ny cho php
to thnh nhng di nng lng (enery bands).
Nhng nng lng, m gia nhng nng lng c nh
ngha, c gi l nhng di nng lng cm (forbidden energy
bands) hay nhng di cm.
Ngi ta thng dng n v ca nng lng l eV (electronvolt).
i lng eV l n v nng lng tng ng in t c c khi
th ca n tng thm 1V (1eV=1.6 x 10-19AVs=1.6 x 10-19J).
Bn knh Bohr c cho bi:

vi h l hng s Planck v me l khi lng ca in t.

39

Nguyn t Hydrogen (tt)

M hnh nguyn t ca Bohr c th kt hp vi l thuyt

quang t (photon) ca Einstein. Hiu s nng lng gia 2
mc nng lng n v m (nng lng photon) c cho bi:

En ng vi mc nng lng cao hn.

Chuyn tip t mc nng lng cao hn xung thp hn dn
n mt nng lng. Nng lng c gii phng di dng
photon, vi f l tn s ca nh sng c pht x. Tn s f v
bc sng tng ng ca nh sng c cho bi:

40

Nhng di nng lng

Ta chuyn vic kho st t nguyn t n sang kho st cht rn.

Vi mt nguyn t cch ly, cc in t c cc mc nng lng ri rc.
Khi s p cc nguyn t cch ly c gom li vi nhau to thnh cht
rn, qu o ca cc in t ngoi cng ph lp nhau v tng tc vi
nhau. S tng tc ny bao gm nhng lc ht v y gia cc nguyn t.
Nhng lc ht gia cc nguyn t gy ra s dch cc mc nng lng.
Thay v to thnh nhng mc n, nh trong trng hp n nguyn t, p
mc nng lng c to thnh. Nhng mc nng lng gn nhau. Khi
p ln, nhng mc nng lng khc nhau to thnh mt di lin tc.
Nhng mc v do nhng di c th m rng ln nhiu eV ty theo
khong cch gia cc nguyn t v phn t.

41

Cu trc di nng lng ca bn dn

By gi chng ta chuyn t m t tng qut cu trc di

nng lng trong cht rn sang trng hp c th hn ca
silicon. Mt nguyn t silicon cch ly c 14 in t. Trong
14 in t, c 10 in t chim nhng mc nng lng su
hn. Do , bn knh qu o nh hn lc tch gia nhng
phn t trong tinh th. 10 in t b lin kt cht vi cc
nguyn t.
Bn in t di ha tr cn li c lin kt yu vi li v c
th tham gia vo cc phn ng ha hc. Do , chng ta c
th tp trung vo lp v ngoi cng (mc n=3). Mc n=3
gm cc lp v con 3s (n=3 v l=0) v 3p (n=3 v l=1). Lp
v con 3s c 2 mc trng thi cho php trn 1 nguyn t v
c hai trng thi c lp bi 1 in t ( 0oK). Lp v con
3p c 6 trng thi cho php v 2 trong cc trn thi ny c
lp bi nhng in t cn li.

42

Biu din s ca nguyn t silicon cch ly

43

S to thnh nhng di nng lng trong silicon theo hm

khong cch gia cc nguyn t trong mng tinh th.

44

Khe nng lng (bandgap)

y ca di dn c gi l EC v nh ca di ha tr
c gi l EV. Hiu s nng lng gia y di dn v
nh di ha tr c gi l khe nng lng EG.
Khe nng lng EG = EC EG gia y di dn v
nh di ha tr bng b rng di cm. EG l nng lng
cn ph v lin kt trong bn dn cho mt in t
trong di dn v mt l trng trong di ha tr.
S thiu ht mt in t trong di ha tr c coi l mt
l [trng t do]. S thiu ht trong di ha tr c th
c lp bng in t ln cn, m dn n s dch
chuyn v tr thiu ht, xem nh l di chuyn. L c in
tch dng. C hai in t v l gp phn vo to nn
dng in.
45

Gin nng lng-momentum

Nu 1 in t c kch thch vo di dn, n c th di

chuyn t do trong tinh th, t in t c th c
xem nh mt ht trong khng gian t do. S truyn lan
ca in t t do c th c m t bng hm sng, l
li gii ca phng trnh Schrdinger. Hm sng cho
in t t do c cho bi
vi k l vector sng c phng trnh sau:

p l momentum (m-mn) ca in t.
Do biu thc ny, nng lng in t c th c cho
trc theo hm ca vector sng. Ta ni v biu din
khng gian k. Cc di nng lng lc ny c th c
xc nh theo hm ca vector k.

46

Gin nng lng-momentum (tt)

47

TD v gin nng lng - momentum

48

Gin nng lng-momentum [cgl gin di nng lng] ca

(a) bn dn gin tip (Td: Si ) v (b) bn dn trc tip (Td: GaAs)

GaAs c gi l bn dn trc tip v n khng cn s thay i momentum chuyn

in t t di ha tr sang di dn.
Si c gi l bn dn gin tip v n cn s thay i momentum chuyn in t t
di ha tr sang di dn.

49

S dn in trong kim loi, bn dn

v cht cch in

50

Schematic energy band representations of

conductor, semiconductor, and insulator.

51

2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.

Schematic of band structures for (a) metals, (b)

semiconductors, and (c) dielectrics or insulators. (Temperature
is 0 K.)
52

Ngi ta phn loi vt liu theo:

Tnh dn in thng qua in dn sut [S/m hay
S/cm] ca n


Ch :

dn in ca bn dn gia cch in v dn in.

in dn sut ca bn dn c th thay i do n ph thuc vo: nhit
, cu trc, thun khit, nh sng

Min (di) nng lng th phn chia vt liu s chnh

xc hn cch trn.
TD:



Mt s bn dn c bn: Si, Ge, (thuc nhm IV) dng

ch to diode, transistor v IC.
Mt s bn dn phc hp: GaAs, ZnS (thuc nhm III-V v
II-VI tng ng) dng ch to cc dng c tc cao, cm
bin bc x,..
53

L thuyt min nng lng (hay di nng

lng) [Energy band theory]

M hnh nguyn t Bohr.

Cc in t ha tr l cc in t lp ngoi cng
ca nguyn t v n tham gia lin kt ha tr vi cc
nguyn t ln cn trong mng tinh th.
Cc in t trong mt nguyn t nhng mc nng
lng ri rc.
Trong mng tinh th cc nguyn t gn nhau to
thnh cc di nng lng, gia nhng di nng
lng c in t (di cho php) l nhng di nng
lng khng c in t (di cm).
54

Th d v m hnh di nng lng

55

2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.

The energy levels broaden into bands as the number of

electrons grouped together increases.

56

2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.

The simplified band

structure for sodium.
The energy levels
broaden into bands.
The 3s band, which is
only half filled with
electrons, is
responsible for
conduction in sodium.

57

2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.

(a) At absolute zero, all of the electrons in the outer energy

level have the lowest possible energy. (b) When the
temperature is increased, some electrons are excited into
unfilled levels. Note that the Fermi energy is unchanged.

58

2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.

The band structure

of carbon in the
diamond form.
The 2s and 2p
levels combine to
form two hybrid
bands separated
by an energy gap,
Eg.

59

60

Phn loi vt liu theo khe nng lng

61

Mt s thut ng thng dng trong

l thuyt di nng lng:
Mt s thut ng thng dng trong l thut di nng lng:


NV: mt trng thi hiu dng ca di ha tr, y l s l ti a trn 1
n v th tch m ta c th tm thy trong ton b vng ha tr.


NC: mt trng thi hiu dng ca di dn, y l s in t ti a trn
1 n v th tch m ta c th tm thy trong ton b di dn.


n: nng in t (electron concentration) l s in t trn 1 n v th
tch trong di dn.


p: nng l (hole concentration) l s l trng trn 1 n v th tch trong
di ha tr.
Ch : n v p cn c gi l cc nng dt dn (carrier concentration) v
chng l nhng ht mang in tch t do v chuyn ng theo in trng
to thnh dng in.
62

2.5 Nng ht dn ni ti
(Intrinsic concentrations)

63

Cc tnh cht vt liu v ht dn

Bn dn thun v bn dn c pha tp cht (Intrinsic and extrinsic

Semiconductors)



Vt liu c xem l bn dn thun (cn gi l bn dn ni ti hay tinh khit)

nu vt liu cha mt lng tp cht tng i nh.
Vt liu c xem l bn dn c pha tp cht (cn gi l bn dn ngoi lai)
nu vt liu cha mt lng tp cht tng i ln.

Bn dn cn bng nhit
Ta gi s ang xt bn dn thun v b qua cc nh hng ca tp
cht vi bn dn. Ngoi ra ta gi s bn dn cn bng nhit, ngha
l bn dn khng b tc ng bi cc kch thch bn ngoi nh nh
sng, p sut hay in trng. Bn dn c gi nhit khng
i trn ton b mu th (ngha l khng c gradient nhit trong
cht bn dn).
64

Nng ht dn trong bn dn

65

Bn dn thun cn bng nhit

66

Mt trng thi

Ta c th tnh cc mt trng thi bng phng trnh

Schrdinger. Tuy nhin ta s khng bn v vic suy ra hm mt
trng thi. SV c th c thm trong ph lc H ca sch
Semiconductor Devices, tc gi M.S Sze.

vi NC l mt trng thi in t v NV l Mt trng thi l

Mt trng thi c xc nh bi mt tham s vt liu, l
khi lng hiu dng ca in t (me) hay l (mh). Do , mt
trng thi ca in t v l thng khc nhau.
67

Mc (hay nng lng) Fermi EF v nng

ht dn cn bng

68

Thng k Fermi-Dirac vi nh
hng ca nhit

69

Phn b Fermi-Dirac ca in t
Fe(E) v l Fh(E).

Cn bng nhit
Cht bn dn cn bng nhit, nu nhit mi v tr ca tinh th l nh
nhau, dng in tng cng qua vt liu bng 0, v cht rn khng b chiu
sng. Ngoi ra ta cn gi s rng khng c phn ng ha hc tham d. Do
nng lng Fermi trn ton vt liu l nh nhau:
EF = EF(x, y, z) = const

70

Nng lng Fermi trong cht rn

71

Phn b Boltzmann

Ch : Cc phng trnh trn ch p dng cho bn dn iu kin cn bng (kcb).

72

Nng ht dn ni ti

73

Nng ht dn ni ti ni

74

Biu din n & p qua ni

75

TD cc gi tr NC, NV v ni ca 1 s
bn dn thng dng ( 300oK)

76

2.6 Cht Donor v cht Acceptor

Bn dn c pha tp cht
Bn dn loi P v bn dn loi N

77

Cht cho in t (donor) v cht nhn

in t (acceptor)

Khi bn dn b pha tp cht (vi 1 lng ln tp cht) th ngi ta gi n

l bn dn ngoi lai hay bn dn c pha tp cht. Trong phn ny ta s xt
nh hng ca cc acceptor v donor ln cc tnh cht ca vt liu. Ta s
tp trung xt pha tp cht cho silicon.

(a) Mng tinh th Si loi N vi pha tp cht bng cc nguyn t donor As

hay P (arsenic hay phosphorus).
(b) Mng tinh th Si loi P vi pha tp cht bng cc nguyn t acceptor
B (boron).

78

Donors

When a semiconductor is
doped with impurities



Extrinsic semiconductor
The impurity energy level are
introduced

N-type Si with donor



Arsenic atom with five valence

electron

Covalent bonds with its four neighboring Si atoms

The fifth electron



Relatively small bonding energy to its host arsenic atom

Be ionized to become a conduction electron

The arsenic atom is called a donor

Silicon become n-type

Because the addition of the negative charge carrier

79

Acceptors

P-type Si with acceptor




Boron atom with three valence electron

An additional electron is
accepted to form four
covalent bonds around
the boron
A positive charged
hole is created in
the valence band
Boron is an acceptor

80

Gin di nng lng ca bn dn loi N

v bn dn loi P

81

Nng lng ion ha ca cc tp cht trong Si

v GaAs

82

2.7 Nng ht dn trong bn

dn loi N v P

83

Bn dn loi N

84

Quan h gia nng in t n v nng

l trong bn dn

85

Nng ht dn trong bn dn N

86

Nng ht dn trong bn dn P
(NA > ND)

87

Bn dn c b chnh (Compensated Semiconductor)

88

nh hng ca nhit n nng ht

dn (Td: Si loi N, xt nn)

At low temperature




As the temperature increased




The condition of complete ionization is

reached
nn=ND

As the temperature is further increased




Thermal energy not sufficient to ionize all

donor impurities
Some electron are frozen at the donor
level
Electron density less than the donor
concentration

Electron concentration the same over a wide temperature range

Extrinsic region

As the temperature is increased even further





The intrinsic carrier concentration becomes comparable to the donor concentration

The semiconductor become intrinsic
This temperature depend on ND and Eg
89

Bn dn suy bin v khng suy bin

90