NPN SILICON TRANSISTOR

9013

TO

92

FEATURES

1.EMITTER

Power dissipation

PCM : 0.625

Collector current
ICM :

Tamb=25

3.COLLECTOR

0.5

1 2 3

--

V(BR)CBO : 45

Tamb=25

ELECTRICAL CHARACTERISTICS

Collector-base voltage

2.BASE

unless otherwise specified

Symbol

Parameter

MIN

Test conditions

TYP

MAX

UNIT

Collector-base breakdown voltage

- -

V(BR)CBO

Ic= 100

IE=0

45

Collector-emitter breakdown voltage

- -

V(BR)CEO

Ic= 0. 1 mA

IB=0

25

Emitter-base breakdown voltage

- -

V(BR)EBO

IE= 100

IC=0

Collector cut-off current

--

ICBO

VCB= 40

IE=0

0.1

Collector cut-off current

--

ICEO

VCE= 20

IB=0

0.1

Emitter cut-off current

--

IEBO

VEB=

IC=0

0.1

DC current gain(note)

HFE

VCE=

1 V,

IC= 50 mA

64

HFE

VCE=

1V,

IC =500 mA

40

300

Collector-emitter saturation voltage

- -

VCE(sat)

IC= 500 mA, IB=50 mA

0.6

Base-emitter saturation voltage

--

VBE(sat)

IC= 500mA, IB= 50 mA

1.2

Base-emitter voltage
- -

VBE

IE=100mA

1.4

Transition frequency

fT

VCE= 6 V,

IC= 20 mA
150

MHz

f =30MHz

CLASSIFICATION OF HFE(1)
Rank

Range

64-91

78-112

96-135

112-166

144-220

190-300

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com