Chapter 5 Fen ide mask to block Pdiffsion at 1000%C fr 30 minus, ealeulate how long to grow it and the total numberof Si atoms from the wafer that are consumed. Diffusion coefficient at T D=Dye®™, where Dy = =8.83x10"cmis Imast = 8VDt = 8VD%3OX60 = 1,009} Time at 100°C = 2hours, using Appendix VI 44(1,009%10"*}em = 4.44% 10°Sem, x00" 4 1273K: 3x10%em*is, Eq Volumeof $i consumed = = 20" 1, = 0.01394em" [Number of Si atoms = 1.39410~em? x5x10®atomsiem” = 6.97% 10% atoms. Prob, 5.2 Plot the distributions for B diffused into Si (N= 8 x 10" em") at 000°C for $0 minutes, for which D = 3x 10" cm?/s, with (a) constant source Ng = 5.x 10cm? , (8) limited source N, = 5 x 10!em™* on the surface prorto diffusion ( ‘The Gaussian distribution differs fom Eq, (4-48) because all atoms are as- sumed to difure into the sample (he. there is no difusion ia the ~z diec- tion) t= 9x10“ x30x60 = 0.5410, VBE = 0.0785 mm 2VBi= 0.187 wr FDI = 0.19024 From the plot below, 2, = 0.4 pm. a 47Prob.5.3 Find the time to grow frst 200nm. the next 300nm and the final 400nm for a 900nm oxide ‘grown on (100) Sin wet oxygen at 1100°C. Draw a cross section diagram including step heights if square window is etched in this oxide and the wafer is re-oxidized. 120m 04mm orignal Si surface 0.44X900=396nm h144nm_ 748mm 2am si ‘Using wet oxidation curve in Appendix VI, the time required to grow 200 nm is ) = 0.13 ‘To determine the time needed to grow the next 300 nm (fora total thickness of 200 + 300 ‘500 nun), we cannot simply read off the time needed for 300 nm because we already ‘have 200 nm oxide grown. The total time needed to achieve S00 nm thickness is 0.6 h. ‘Therefor, the additional time required for the increase of thickness by 300 nm i 0.6 — 013 047h. ‘Similarly, the time needed forthe final 400 nm is 18 0.6= 1.2 ‘When a window is etched in the oxide and we r-oxidize the wafer, we have to start from ‘an oxide thickness = 0 inside the window, but oxide thickness = 900 nm outside the ‘window. So, the time required to increase the oxide thickness outside the window is 6 ~ 18 = 42h. ln 4.2, the oxide in the window starting from zero oxide thickness = 1700 ‘nm. Keeping in mind that for every mieron of oxide, we consume 0.44 micron of Si, we we step in oxide = $64 nm step in Si = 266 nm 48 484 Find the implant parameters for an As implant into Si with the peak being at the merface. For an implanted dose of 4 ions‘em?, the ion distribution is given by Eq. (S| wept end -1( =| Mon aie 4 | Peak valuelisat Ry sraggleis AR,, From Appendix IX, R, = 0.lhun => Energy = 180 keV 4k, =0.035um From 5-10, Ng 5x10 =P 129 a4 Gox1o 200 39x10"4em! o= = eText Brod. 55 ‘Use a singly and doubly charged B implant machine to achieve B implant into Si with required conditions. Find out how long this implant will ake. For R, = 05m, weneed 200 keV implant machine (om Appendix IX). Therefore use 100 keV’ doubly ionized boron ma for doubly ionized boron t 4 62531080. 110"), He sx iol = 825x108 (0.tx10 A 2110004 = 1160s For 1000 higher curent,¢ = 0.16. This sto shor for uniformity of dose. Prob.5.6 “Assuming a constant (unlimited) source difusion of Pat 1000°C into 1S-em p-type Si caleulate the time required to achieve a junction depth of Im. For 1f-am paype Si, we have 1.7 x 10" atoms/cm” At 1000°C, Neat * 10" em”, 49We have: 10?! erfe(—* a where D=Dyexp(-E,/AT) =10Sexp| ——3 —__ Jems 8.62x107(1273) =2.61x10"om"/s 10x10 = wreixio™= 3 1.97 x10" s a Prob.S.7 ‘n patterning the structure shown in the question, design the mask aligner optics in terms of numerical aperture of the lens and the wavelength of the source. => jum Prob. 5.8 Find the electron diffusion and drift currents at in ap'-n junction. 30 50team Pt nate eat okt 2, 4 =0)=: ar an) Assuming space charge neutrality the excess hole distribution is matched by an excess electron distribution Bn) = BCs) Ds rer, als ag = AAD, SE = 4A 2 I daew =~ baeedag~ by Cn) qb, tte e™) 4 Diehl ar mately Ye De 10" and Ne= 5 x 10" em. Find (a) Er on each side. (b) band 22.~00259in 10 = 0asrev f ™ Usx10) f Ny sxio!* © bp bye brine =00259In 22s oaasev Fo Ein ATI Gsx10} © © a¥q=0467+0329 0.7966 g 3s : NaN sx 6) ay =trin Mee = 902501952 = 0.960V oa nm 225x10" ee st SIrob. S.10 For the junction of Prob. 5.9, with circular area of diameter 10 wm, calculate parameters ‘and sketch as in Fig. 5.12 ; fsa 09 G9 anf 16x10 16x10" aarxiaty Tiassa} charge density xq i remy 05 -3.48x 10" Tq 32 52Prob. S11 Find the electron injection efficiency Iq/ (a) Jn GA(Daj bn)rg (et — 1) 1 © GAU(D;[Lp}Pn + (Dal En)ng] (PFT — 1) to increase Iny/, make na > pp (ie., use n*-p). 33 53Brobs.t2 : 4A'Si pron junction with Nz = $x 10 em" and A = 10? em! has t, = Ins and Dy = 10 owls. Find Lfor Vem 0.5. D, 1 gt 2b po were 28x10)/(5x10" Prob. 5.13 (a) Why is C, negligible in reverse bias? For reverse bias of more than 2 few tenths of a volt, Ap, ~ ~pe Changes in the reverse bias do not appreciably alter the (negative) excess hole distribution. The primary ‘variation is i the width ofthe depletion region, giving rise tothe junction capacitance. () With equal doping, which carrier dominates injection in a Gads junction? Electron injection dominates since He » iy. With me = pit is clear that a carrier with higher mobility will determine the injection. Prob. 5.14 (a) Find C,for =10V fora Si p'-m junction 10° em? in area with Ny~ 10! em? On the n-side: 54Fp 6 triad 002501! 7" Bx p= 0.288eV Vy =0555+-0.288 = 0.8430 c aAfene]? 17 r | (210? fact nt07 118885 10° 1085] 10843 = 278x104 F (0) What is W just prior to avalanche? From Fig. 5-2, Vie= 300 V for a p'-n with Ny= 10" em’ [rege]? _[2xataxeasxiom!x300]” Lamy 1.6x10" x10 =1.98%10"em = 20. Prob. 5.1S, Show Bo depends on doping of the lightly doped side. fee 1 yy | the lightly doped side dominates (the doping. variation of Vp has minor effect). For example, fora pn: oof Erb Sle 7 em yt , 1A Sion junction has pp = 107 and y= 10 cm, yy! = 450 and we? = 700 em'V-5, 127 10" and y= 10? sand A» 10° em. Drew an equilibrium band diagram and find Vo. 35 3510” By ~Ep =k in 22 =00259In 10 = .407ev to! NAN, 10%? Vo = kT in—£54 = 002591n——_, = 0.695V ee 2.25x10% 4 toga \ aaa 0.407 ev Fe Era BO “Fumy ~7F ky : The current in a long p'-n diode i tripled att = 0. (a) What isthe slope of Sp(x. 0)? ‘The slope triples at ¢= 0: a= 40, Sel dnl, oo Theslopeis 36 56o Relate (t=) oF (¢=0") Call ™ the voltage before au=o" Call the voltage at = YADy gy Dy 9 giar Tt Pye” ‘Taking the ratio: jae -AT rar Eins @ or +0,0285 Prob.$.18 Wop * tm fi Ip) ‘The total current is ‘On the p side this is composed of bp) = 94 Penge (et 1) and Tplxy)= I= Insp) d, A Pee" yn, +22 py e"™ 1) Na= Na y= Pr Ne 37tay, Pr a srry Do | ak cgarat ane) | (ett For the given pon junction, calelate the contact potential, zero-bias space-charge wideh ‘and the current with a forward bas of 0.5V. (4) The contact potential is given by (0) Cates total wid of space charge region: we felts )y, ae We 2.848.852.1079 (6-15 9-7). 0695 16x10" =9.57x10% em (©) Given: yy =1500em2/V, 1p =15000m?/Vs, + =2.5x10%s, and 9, =15x10 em”, wehave ar o 2, -n{ AE = 4sx0.0255)=11.666m%8 Dy =38.85em%Is 254x107 em, by = /D,t =9.86x10-%em 38 58‘ PeePe| 7 2] 2885 1.66, =fusxi0™ 1.52107] — 88 5 h " a X9.86x107 "1054x107 2192x10" Cho 1918x105 ” real oooxrs opps ‘Mos of the current is cared by electrons because N, is greater than Ng ‘To double the electron current halve the acceptor doping, Prob. 5.20 For the given n*-p junction, calculate the electric field in the p-region far from the Junction. 10259 xp, = 25.9em"/s ¢ Pars NOsRRXIO, Peat Hp @ ‘etoalcaretie =the eeczon cant croming he junction, Derpinthep-repion te cuents holed a9 | Geng? pone ) rs 7.20%107%em Indy =708 Alem? = ype JZ 708 thus Le GyNy 16x10" x500%10 8.85V/em 59Prob. S.21 For the diode in Prob. 5.16, draw the band diagrams qualitatively under forward and ‘reverse bias showing the quasi-Fermi levels, Aig Na = 002591n 0 om Tsxi i, (with reverse bias voltage)Prob.5.22 ‘nap junction with N-doping being changed fram N10 2Nz, describe how do {junction capacitance, bllin potential, break-down voltage, ohmic loses. (a) Increases () Increases (©) Decreases (@) Decreases rob. 5.23 Find the forward curren at a forward bias of SV and the current ata reverse bias of — (.3¥ forthe junction in Prob, (5-16) road Peres en fer netgear (sxio' cisxaol? e107 For minor cries ar 2 yt 002804501166 onsite Pa , =p, =0.0259%700=18.3em%s on p-side 7 1, = {Dg =Vinaoxiomi Ly = Dit = 18.13 x0.1x10° Dy Da 44 2 p+ Pen Jy offe0. t | 1600x0400 Frag? 29410 +2250 ) 0810 38x10%em do108 ‘00133 4370x1084 1 Tofe® 599 y= 1.088104 in forward bias. y= 4372107 in reverse bias 6 61Prob. 5.24 ‘Inthe junction of Prob. (5-16), calculate the total depletion capactiance at 4V. oe YA ett] a WW -VY N+, Wa 16x10 (rats | 4.19810 F Brobs2s For the given p"-n diode, explain whether avalanche breakdown or punchthrough breakdown occurs. Voyleche = 13V fiom Fig, 5.22. wr=[ 22s0+¥02))” _[2018K885 x10" Ko956+13) Ng 16x10 x10” 127%10%em which is less than the width of then - region ‘Therefore, avalanche breakdown occurs. 5 For he given np junction, coleulte the capactance. Cx Copactancen "LA & [fe 2Yo +¥ a) Assume Ey Bi for then mate Yonomsrintes035 For N, = 10cm", ¥y=0.84V. For N, =10"’em™, ¥y =0.98V a 62For, Al Wps¥s 084-47, PA aN ey /2~ (OD MLGXIO 10 LL BXBBSXIO™)/2 1.197105, +084) hich stinearly proportional toV with theslope being U(A2gN 0,2) ‘which in tun yilds ‘The plot of

0.4V,xy = ta=egiie Vox LN OS+ we) Tt What morepion thickness ensures avalanche rather than punch-through in Si pon with Ng= 10% en? From Fig. 522, Vie = 300¥. From Eq, (5-236) with V— V2 = 3000 and No» Ne, sexe [te [pees ge ey! 18 x 10-10 = 2% 10m = 20 pm ‘Thus, if them region is 20 um or thicker, avalanche wil occur before punch- through. a ornd Qy and I schen holes are injected rom pt snlo a short neregion of length 1 af bp warves linearly. ton) TA tds = 985 1a ly = 0) = Se = Be Find (a) the hole distribution, and (b) the tolal current i @ narrow-bose diode (2) bp.29) = Cems D etter a (8) At 2. =0, p= dp = CHD (8) Abra, bp a0 aCe ting Dele St) Potting (3) into (4): 0=CeM#r4(Ap.-Chetltr pal (5) C= Ae. Dx ape = Zh Se é ° ¢ ‘Thus, from (5) and (2) we bave ‘Aa felt — tenn Wea Te (6) &plz,) = Un et) Be ) 6 68rob, 5.36 For the narrow-base diode, ind the current components dee to (a} recombi= nation on, and (2) recombination at the ohmic contact. ‘The steady state charge stored in the excess hole distribution is 0, = 0A [Slander = 9A [[C evn Del dry = Aly [Cle — 1) + Dlell™ ~1)] ein 5 elon 2 = Ala Si Te ‘Thos, the curreat due to recombination in is tAlsPe [say £. LY (eevee, Qe = $Alat fs fn 1 = Aen ang] ct (b) The current due to recombination at — = € is Be [een fhm (note that Lp/ Dally) ‘Those corespond to the base recombination and clletor currents i the pap BIT with Vee = 6, given in Bas(7-2) Prob. 537 I the n region of graded ptm has Nu=Gs™, find, E(2), Q, and Cy tom, fae ate [an o) Eator, facto" me wn mat © 09Prob. $38 Find (2), W., and C, for a linearly graded junction ) (ey © [ew = fof 2 or use a dummy variable. dV}, ot Yo~ wry ay vey = £2 [MEE apap 4 WEP wy] Be = Oy = rvs —vyfeat? G = Q=0A [Ge de = gAcw'/s f12e(¥— vieep® GRADED wt For further discussion, ce Woodall, etal, J. Vac. Sei Technol. 19, 626(1981), 70i i 4 3 § i 2 7 Erb. S41 Thon barrier is formed between a metal having m= 43 Vand p-ope Si (= 47) ‘The acceptor doping in the Si is N, = 10"” em”. (@) Draw the equilibrium band diagram, showing # numerical value for gVo. B-Ep=tTin BD 1" 0259 oF =o407e¥ n 1©, =440.55+0407=49576V PEE o inh a Metal Si Metal (b) Drow the band dicgram with 0.3 V forward bas, Repeat for? V reverse as — TT) 8 ee, oar ¢ Forward bias = 03 ¥ metal negative Er Revers bias Vi = =? . meal positive 7Prob.s2 Under the given paramerers for apiece of Ge. find its conductivity, work function difference. Explain whether I isa Schottky Barrier or an ohmic contact nA N= peng aoe, ne 2.Sxt0! = +5310), solve form = @sx10 n= 408x10! em”, p=1.54x10? em o = aint, + p,)=— 2 (nd, +, A, + hp) = ED, + 9D) sx10? 4.043<10"*<100+1.5410! x50)=0.029718 my"! — 100+ ) = 0.0297(0: em) eer } 1 Je o0124ev 25x10" Forn- type semiconductor, the Fern level is above the tine Si Fermi evel by the Fenn potential. tra bp B atta oss : a 20.- (0H t5- (6908 -oonraasiney Electrons move from Ge tothe metal. Therefore, we lose majority caries inthe semiconductors, making this a Schottky baer. a 3