Hc Vin Cng Ngh Bu Chnh

Vin Thng
Tn: NG TON THNG
Lp: 10VTA1
MSSV: 410160063
GII BI TP CU KIN IN T
BI TP CHNG 1
Bi 1-31. Cho mch in dng diode nh hnh . Xc nh dng in I vi iu kin c tuyn VA ca diode c tuyn tnh ha

b)

a)

Gii:
a)

Ta c : E - UD = I.R
S tng ng
c)

Ta c : I
S tng ng

c)

Bi 1-32. Cho mch in dng diode nh hnh di. Xc nh gi tr dng in qua diode ID v
in p ra trn ti R.

a)

b)
Gii:

a)S tng ng:

E UD = ID.R
ID=
Ura=ID.R=1.95mA.2,2k= 4,3 V

b) S tng ng :
E - UD = I ( R1+ R2 )
I=
Ura=ID.R2-UD=1,24mA.4,7k-0,7V=5,128 V

Bi 1-33. Cho mch in dng diode nh hnh di. Xc nh gi tr in p ra Ura .

b)

a)

Gii:
a) S tng ng:
E - UD1 UD2 = I ( R1 + R2 )
I=
Ura = I.R2 = 4,75mA.2k = 9,5 V
b) S tng ng:
E - UD = I ( R1 + R2 )
I=

= 3,27 mA

Ura = I.R2 = 3,27mA.4,7k = 15,37

Bi 1-34. Cho mch in dng diode

di. Xc nh gi tr in p ra Ura v dng in qua diode ID.

a)

nh hnh

b)
Gii:

a) S tng ng:
E - UD = I ( R1 + R2 )
E = U D + I ( R1 + R2 )
= 0,7V + 10mA.( 2,2k +
= 34,7 V
Ura = I.R2 =10mA.1,2k = 12 V
b) S tng ng:
E E2 UD = I.R

1,2k )

I=

= 3,57 mA

Ura = UD E2 = 0,7V + 5V = 5,7 V

Bi 1-35. Cho mch in dng diode nh hnh di. Xc nh gi tr cc in p Ura1, Ura2.

a)

b)
Gii:

a) S tng ng:
E - UD1 = I.R
I=

= 2,34

mA

Ura1 = I.R + UD1 = 2,34mA. 4,7K + 0,7V = 11,7 V

URA2 = UD2 = 0,3 V
b) S tng ng:
E - UD1 UD2 = I. ( R1 +
I=

R2 )

= 2,44 mA

Ura1 = I.R1 + UD1 + UD2 = 2,44mA. 1,2k + 0,3V + 0,7V = 3,93 V

Ura2 = I.R2 = 2,44mA. 3,3k = 8,05 V
Bi 1-36. Cho mch in dng diode nh hnh di. Xc nh gi tr in p ra Ura v dng in
qua diode ID.

a)

b)
Gii:

a) S tng ng:
E - UD = I.R
I=
Ura = I.R = 19,3 V
dng in qua diode : ID1 = ID2 =I/2
b) S tng ng :
E1 E2 UD = I.R
I=

= 8,77 mA

Ura = I.R = 8,77mA. 2,2k = 19,3

Bi 1-37. Cho mch in dng diode nh hnh di. Xc nh gi tr in p ra v dng in I.

a)

b)
Gii:

a) S tng ng:

V D1 v D2 khc loi nn khi c cp in p phn cc diode D2 (Ge) lun thng ngng

0,3V, cn diode D1 s lun kha do ngng thng ti thiu ca diode loi Si l 0,7V.
Ta c E UD2 = I.R
I=

= 9,7 mA

in p ra trn ti R :
Ura = I.R = 9,7mA.1k =9,7 V
b) S tng ng:
E1 E2 UD1 UD2 = I.R

 I=

= 0,98 mA

in p ra trn ti R :
Ura = I.R + E2 = 0,98mA.4,7k + 12V = 16.6 V
Bi 1-38. Cho mch in dng diode nh hnh di. Xc nh gi tr cc in p Ura1, Ura2 v
dng in I

Gii:
S tng ng:

Dng in qua in tr R2:

IR2 =

=0,85 mA

Ta c : E UD1 UR1 = 0
UR1 = 20 0,7 = 19,3 V
Dng in chy qua mch :
I=

=19,3 mA

Dng in ra Ur1 = IR2.R2 =0,85mA.0,47k =0,4 V

Dng i ra UR2 = UD2 =0,3 V

Bi 1-39. Cho mch in dng diode nh hnh v. Xc nh gi tr in p v dng in qua
diode ID.

Gii:
Dng in trong mch:

I=

Dng in qua diode:

ID1=ID2 =

= 3,3 mA

= 1,32 mA

Ura = ( 1,32mA + 1.32mA ).2k= 5,28 V

in p ra:

Bi 1-40. Cho mch in dng diode nh hnh ( Cng OR logic m ). Xc nh gi tr in p ra

Ura

Gii:
S tng ng:
in p ra:
Ura = E UD = 5V 0,7V = 4,3 V
Ira = Ura/R =

= 4,3 mA

Bi 1-41. Cho mch in dng diode nh hnh. ( Cng logic AND m). Xc nh gi tr in p
Ura .

Gii:
S tng ng:
in p ra chnh l in p thng cho diode
V bng UD2. Vy ta c Ura = UD2 = 0,7 V

D2

Bi 1-42. Cho mch in dng diode nh hnh. Xc nh gi tr in p ra Ura.

Gii:
S tng ng:
Diode phn cc ngc, h
Do Ura = 0 V

Bi 1-43. Chi mch in dng diode nh hnh. Xc nh gi tr in p Ura .

Gii:
S tng ng:
in p ra ra :

mch

Ura = E Ud1 = 5V 0,7V = 4,3 V

Bi 1-44. Cho mch in dng diode nh hnh. V dng in p ra trn ti Rt v dng in IR.

Bi 1-45. Cho mch in dng diode nh hnh di.

a) Xc nh in p ra 1 chiu Udc trn ti
b) Xc nh gi tr in p ngc t ln cc diode

Gii:
a) Diode hot ng ch phn cc ngc, h mch, do Udc = 0 V
b) Gi tr in p ngc t ln cc diode
Bi 1-46. Cho mch in dng diode nh hnh di
a) V dng in p ra trn ti
b) Xc nh gi tr in p ra 1 chiu Udc

Gii:
a)

UT1 = ( UVm 0,7V )/2

UT2 = (- UVm + 0,7V )/2
Bi 1-47. Cho mch in dng diode nh hnh. V dng in p ra trn ti Rt v xc nh gi tr
in p mt chiu trn ti Rt(Udc).

Gii:
a)

Bi 1-48. Cho mch in dng diode nh hnh. V dng in p ra trn ti.

a)

b)

c)
Gii:
b) y l mch chnh lu na chu k, dng in p ra trn ti R vi in p vo nh trn :
UD=0,7V

c)

Bi 1-

49. Cho mch in nh hnh di

a) Xc nh cc gi tr Ut, It, Iz, V IR vi Rt = 180

b) Xc nh khong bin i Rt sao cho mch vn lun trng thi n p Ut = Uz.

Gii:
a) Ta c:
Ut = Uz = 10V
It = Ut/Rt =10V/180V =5,5 mA
IR = Uv/( Rs + Rt ) = 20V/( 220 +180 ) =50 mA
Izmax = Pzmax/Uz = 400mW/10V= 40 mA
b) Is = ( 20V 10V )/220 = 45,45 mA
Itmin= 5,5 mA => Rtmax = 10V/5,5mA = 1.8k
Itmax = 45,45 mA => Rtmin = 10V/45,45mA =220
mch lun trng thi n p th:
220 < Rt < 1.8k
Bi 1-50. Cho mch in dng diode nh hnh. Xc nh khong bin i ca in p vo
in p ra trn ti lun n nh Ut = Uz = 8 V.

Gii:
Ut = Uz = 8 V
Izmax = Pzmax/UZ = 400mW/8V = 50 mA
Chn Izmin= Izmax = 5 mA
It = Ut/Rt = 8V/0,22k = 36,36 mA

Khong bin i in p vo in p ra trn ti lun n nh:

Uvmin

Uv

Uvmax

Uz + Rs.( Izmin + It )

Uv

8V + 91( 5mA + 36,36mA )

11,76V

UV

Uz + Rs.( Izmax + It )
Uv

8V + 91( 50mA + 36,36mA )

16,86V

Bi 1-51. Cho mch in dng diode nh hnh. Xc nh gi tr in p ra mt chiu trn ti Udc

vi tr hiu dng in p xoay chiu nh trn th cp ca bin p bng 129V = U2.

Gii:

Bi 1-52. Cho mch in nh hnh.

Bit Un= 10 V, Rn = 20 k , R1=20k , Rt

=5k

Gi thit diode l l tng

Khi thng in tr thun Rth = 0
Khi tt in tr ngc Rng =

Hy xc nh in p trn Rt.
Gii:
Diode trong mch l l tng
Rm=

= 145

Im = 10V/145 = 69 mA
Ut = 69mA.125 = 8,6 V

Bi 1-53. Cho mch in chnh lu na chu kig nh hnh. Nu bit Un= Umsin t, gi thit diode
l tng. Hy xc nh biu thc in p trn R.

Bi 1-54. Cho mch in dng diode zenner nh hnh. Bit Uz=8,2V, dng Iz=1A, Rt=10. Tnh
in tr b Rs m bo Ura = Uz =8,2 V khi in p U thay i 10% quanh gi tr 12V

Gii:
10,8V

UV

13,2V

It = Ura/Rt = 8,2V/10=820 mA
Ismax = 820 mA
Rs = Uvmax/Ismax = 13,2V/820mA = 16
Bi 1-55. v s lp li bi 1-54
-Xc nh in p trn Rs
-Xc nh dng qua diode zenner Dz
-Xc nh cng sut tiu tn trn Dz.
Gii:
Ismin = ( 13,2V 8,2V )/16 = 312,5 mA
Izmax = 820mA 312,5mA = 507,5 mA
Cng sut tiu tn trn Dz :

Pzmax = Uz.Izmax = 8,2V.507,5mA = 4161,5 mW

Bi 1-56. Cho mch in nh hnh. Nu bin p mt chiu l 12V, in p trn LED l 2V, dng
qua LED l 20mA.
a) Hy xc nh in tr hn ch Rs
b) Nu mc song song 10 LED thay i cho mt LED trong s . Hy xc nh in tr Rs
cn thit.

Gii:
a) URs = 12V 2V = 10 V
in tr hn dng Rs:
Rs = 10V/20mA = 500
b) Khi mc 10 LED song song thay 1 LED trong s
ILED=10.20mA = 200 mA
Rs = 10V/200mA = 50

CHNG 2:
TRANSISTO LNG CC V TRANSISTOR TRNG

Bi tp 2-1. Mt transistor N-P-N mc theo s BC c dng in Iv = IE = 50mA; dng in IC

= 45 mA.
a) Xc nh h s khuch i dng in mt chiu .
b) Nu mc transistor theo s emit chung (EC). Tm h s .
Bi gii

a) H s khuch i dng mt chiu

I C 49

0,98

I E 50
b) H s tnh theo

0,98

49
1 1 0,98

Bi tp 2-2. Mt transistor c dng tnh emit IE = 1,602 A; dng tnh bazo IB = 0,016 mA; b
qua dng in ngc.
a) Xc nh dng tnh colect IC.
b) Tnh h s khuch i , .
Bi gii
Tnh dng tnh colect IC
IC = IE IB = 1,602 0,016 = 1,586 mA
H s khuch i =

I C I E I B 1,586

0,99
IE
IE
1, 602

H s khuch i

IC I E I B 1, 602 0, 016

99,125
IB
IB
0, 016

Cng c th xc nh theo cng thc:

0,99

99
1 1 0,99

Bi tp 2-3. Bit c tuyn vo v c tuyn ra ca transistor mc theo s emit chung EC

nh hnh 2-10.
a) H s khuch i ti im lm vic A.
b) in tr vo Rv = rBE.
c) H s khuch i nu mc theo s bazo chung BC.
I

d) Nu tn hiu vo
B thay i, xc nh
h s khuch i
dng xoay chiu.

Bi gii
a) H s khuch i tnh ti im A.
ICO 20.103

100
I BO 0, 2.103

U BE
0, 70 0,5
0, 65

3, 25
3
I B
(0,3 0,1).10
0, 2.103
c) Nu mc theo s baz chung BC h s khuch i tnh c xc nh

100

0,989
1 100 1
b) in tr vo RV rbe

d) Khi dng in vo IB thay i t 0,1mA n 0,3mA, tm bin thin dng in IC tng

ng trn c tuyn ra, tnh c h s khuch i xoay chiu.

I
(28,5 9,8)103
C
93,5
I B
(0,3 0,1)10 3
Bi tp 2-4. Cho mch khuch i dng transistor nh hnh 2-11
Bit:

RC = 5 k
= 50

in tr vo Rv = rBE = 1 k
in p vo Uv = UBE = 0,1V
a) Xc nh dng in vo v dng in ra.
b) Tnh h s khuch i in p ca transistor.
Bi gii

Ira = IC = IB = 50.0,1 = 5mA

in p ra:

+E

RC
Ura

UV

UBEO

a) Dng in vo IV = IB =
UV
0,1

104 0,1mA
3
RV 1.10
Dng in ra:

hnh 2.11

Ura = Ira.Rra = ICRC = 5.10-3.5.103 = 25 V

b) H s khuch i in p
KU =

U ra 25

250
UV 0,1

Bi tp 2-5. c tuyn vo v ra ca transistor c dng nh hnh 2-12.

a) Hy xc nh h dn ca transistor ti im lm vic O.
b) Nu bit in p UBE thay i 0,2 mV, in tr RC = 4k. Hy xc nh in p ra.
c) Tnh h s khuch i in p.
Bi gii
a) H dn ca transistor c xc nh bng phng php th

I C2 I C1
U BE2 U BE1

I C mA
,
U BE V

(4, 2 3, 0)103 1, 2.10 3

mA

12
0, 7 0, 6
0,1
V

b) Nu UBE = 0,2 V th dng IC bin thin

IC = UBE . S= 0,2.12 = 2,4 mA
in p ra Ura = IC.RC = 2,4.10-3.4.10-3 = 9,6 V
c) H s khuch i in p

KU =

U ra 9, 6

48
UV 0, 2

Bi tp 2-6. Transistor lng cc c c tuyn vo v ra mc theo s EC nh hnh

2-13. Cn c vo c tuyn hy xc nh gn ng cc thng s sau:
a) in tr vo tnh ti im O.
b) in tr vo ng.
c) H s khuch i dng in mt chiu .
d) H s khuch i dng xoay chiu.

Bi gii
a) in tr vo tnh

RV rBE

U BEO
0, 6

4k
I BO 150.106

b) in tr vo ng RV
RVd

c)

U BE U BE2 U BE1
0, 68 0,52

1, 6k
I B
I B2 I B2
(200 100).10 6

H s khuch i dng mt chiu


d)

I CO 25.103

166
I BO 150.106

H s khuch i dng xoay chiu .

I C
I B

I B I B2 I B1 (200 100)106 100.106

Tm I C tng ng trn c tuyn ra

I C2 30 mA; I C1 15 mA
I C (30 15).10 3.

(30 15)103
150
(200 100)106

Bi tp 2-7. Cho mch in nh hnh 2-14 . Nu bit dng ICO = 5mA; h s = 100; UCEQ = 5V;
thin p UEBO = 0,6 V; E = 10V.
a) V cc dng in mt chiu chy trong mch.
b) Tnh in tr RC.
c) in p UC so vi t.
+E

Bi gii
R1

a) Dng in mt chiu chy trong mch nh ch dn trong hnh

U 2-14.
IE = I C + IB

RC
Ura

b) in tr to thin p R1 c xc nh.
E U BEO E U BEO 10 0, 6
9, 4
R1

188k
5
I CO
5
I BO
5.10
3
10
100

c) Tnh in tr RC
U
E U CEO 10 5
RC RC

1k
I CO
I CO
5.103
d) in p UC so vi im mass chnh l in p UCEO
U C U CEO 5V

hnh 2.14

Bi tp 2-8. Cho mch in nh hnh 2-14. Nu bit R1 = 220k; RC = 2k; = 50; UBEO= 0.5
V. Hy xc nh cc thng s tnh dng IB, IC, IE, in p UCEO.
Bi gii
a) Xc nh dng IBO

E U BEO 10 0,5
9,5

43, 2 A
3
R1
220.10
220.103

I BO

b) Dng ICO = IB = 50.34,2 A = 1,7 mA.

c) Dng IEO = ICO + IBO = 1,7 +0,0342 = 1,7342 mA
d) in p UCEO
UCEO = E ICO.RC = 10 1,7.10-3.2.103 = 6,6 V
Bi tp 2-9. Mch in nh bi 2-7 nhng mc thm in tr RE emito v bit st p trn in
tr ny l 1 V.
a) Xc nh tr s R1, RC,RE.
b) Xc nh in p UC, UB so vi im mass ca my.
Bi gii
a) Xc nh RE

URE = IEO.RE = 1V
RE

Suy ra:

1
I EO

1
I CO

I CO

1
5.103

5
103
100

198

in tr R1
R1

U R1
I BO

E U BEO U R1
I BO

10 0, 6 1
168k
5.105

10 0, 6 1
168k
5.103

in tr RC
ICO.RC = E UCEO - U RE
Suy ra:
b) in p

RC

E U CEO U RE
I CO

UC = E ICO.RC = 10 5.10-3.800 = 6 V

hay

UC = UCEO + U RE = 5+1 = 6 V

in p

UB = UBEO + U RE = 0,6 +1= 1,6 V

Bi tp 2-10. Cho mch in nh hnh 2-15. Bit R1 = 300k; RE = 2,7 k ; = 100; UBEO = 0,5
+E
V; E = 12V.
a) Xc nh cc tham s tnh.
b) Nu mc Rt = 2,7 k hy tnh in tr ti xoay chiu.

R1
Uv
Ura

Bi gii

RE

Rt

a) Trc ht ta xc nh dng tnh baz IBO

E = IBOR1 + UBEO + IEORE = IBOR1 + UBEO + (1+)IBORE

Suy ra: I BO

E U BEO
12 0,5

20 A
3
R1 (1 ) RE 300.10 (1 100).2, 7.103

- Dng tnh ICO = 100IBO = 100.20A = 2mA

- Dng tnh IEO = ICO + IBO = 2+0,02 = 2.020 mA.
- in p trn cc E, cc C v B so vi im mass:
UE = IEO.RE = 2,02.10-3.2,7.103 = 5,45 V
- in p

UC = E = 12 V

- in p

UB = UE + UBEO = 5,45 + 0,5 = 5,95 V

b) Nu mc R1 = 2,7 k th in tr ti xoay chiu mch emit

R = RE // Rt =

RE .Rt
2, 7.2, 7

1,35k
RE Rt 2, 7 2, 7

Bi tp 2-11. Cho mch khuch i dng transistor lng cc nh hnh 2-16 a. Bit

hnh 2.15

R1

+E

RC

E=
10V;
U
R
U
RC =
t
R2 RE
5 k;
hnh 2.16 a
RE =
0,2RC
R1 = 85 k; R2 = 15 k; UCEO = 4V; ICO IEO; =
50.
ra

a) Hy xc nh cc tham s lm vic tnh ca transistor.

b) im lm vic tnh O v dng ng ti mt chiu.

Bi gii
a) C th coi

IEO = ICO
ICO( RE + RC) = E - UCEO

Suy ra: I CO
I CO

E U CEO
E U CEO

RC RE
RC 0, 2 RC
10 4
103 A 1mA
3
(5 1).10

- Dng tnh baz IBO:

I BO

I CO 1

0, 02mA 20 A

50

- Thin p
U BEO I P .R2 U BE

E
R I .R
R1 R2 2 EO E

10.15.103
103.103 0,5 V
3
15 85 .10

b) Ta im lm vic tnh O: ICO = 1mA; UCEO = 4V. dng ng ti mt chiu cn

xc nh mt im na. T biu thc phng trnh ng ti mt chiu.
U ra E I C .RC

Cho IC = 0 Ura = E = 10V ( im A trn trc honh ) ni qua im A v O, ta c

ng ti mt chiu R= ( hnh 2-16b).
Bi tp 2-12. Nh bi 2-11 nhng nu mc vi u ra in tr ti Rt = 5 k. Hy xc nh in
tr ti xoay chiu v dng ng ti xoay chiu.

Bi gii
- in tr ti xoay chiu R - .
R - = RC // Rt =

RC .Rt
5.5

2,5k
RC Rt 5 5

- dng ng ti xoay chiu R cn xc nh mt im trn trc honh hay trn trc

tung ri ni vi im lm vic tnh O. T im UCEO cng thm mt on tng ng vi in p
bng ICOR - .
ICOR - = 10-3.2,5.103 = 2,5 V
ta c im A trn trc honh ( hnh 2-16b).
Ni im A vi im O v ko di s c ng ti xoay chiu. Cng c th dng
ng ti xoay chiu bng cch xc nh im B trn trc tung ng vi dng Imax =

E
10

4mA , ri ni im B v O.
R 2,5.103
Imax =

E
10

4mA
R 2,5.103

Bi tp 2-13. Cho mch in nh hnh 2-16a. Nu E = 10V; UCEO = 4V; RE = 0,1RC ;

ICO = 20mA; UBEO = 0,7 V, t c tuyn vo ca transistor ng vi UBEO = 0,7 V, tm c IBO =
0,2 mA.

a) Xc nh tr s cc in tr RC, RE, R1, R2 m bo c cc thng s trn.

b) Xy dng ng ti mt chiu.
Bi gii

a) Xc nh tr s cc in tr
T biu thc:
E = ICORC + UCEO + IEORE ICO(RC + RE) + UCEO
( y c th coi ICO IEO n gin cho vic tnh ton).

RC RE

Suy ra

E U CEO
10 4

300k
I CO
20.103

RC + RE = RC + 0,1RC = 1,1RC = 300

RC

300
272, 7
1,1

RE 0,1RC 27, 2
- in tr R2 c xc nh theo biu thc:
I P R2 U BEO I EO .RE

R2

Suy ra

U BEO I EO .RE
IP

( y chn dng phn p IP = 5IBO )

R2

U BEO I EO .RE 0, 7 20.103.27, 27

1, 245k
5I BO
5.0, 2.103

- in tr R1 c xc nh t biu thc:
R1 I P I BO E I P R2 E U BEO I EO RE

Suy ra

R1

E U BEO I EO RE 10 0, 7 0,545

7,3k
5 I BO I BO
6.0, 2.103

b) xy dng ng ti mt chiu, ngoi im lm vic tnh O bit

O( 20 mA, 4 V) cn xc nh mt im na.
T phng trnh UCE = E IC(RC + RE)
nu cho UCE = 0 th

I Cmax

E
10

0, 0333 A 33,3mA
RC RE 300

ta c im B trn trc tung, ni B vi O v ko di s c ng ti mt chiu (hnh-17)

Bi tp 2-14. Bit c tuyn truyn t v c tuyn ra ca mt J-FET knh N nh
hnh 2-18.
a) Xc nh trn th dng bo ha IDSS v in p kha UGSK.
b) Tnh dng ID ng vi cc gi tr UGS = 0V; UGS = -2V; UGS = -4V v UGS = - 6V.

Bi gii
a) T c tuyn truyn t ID = f(UDS) hnh 2-18a,dng bo ha IDSS tng ng vi UGS = 0,
IDSS = 15 mA.
in p kha UGSK ng vi ID = 0, trn th xc nh c UGKS = -8V.
b) Dng ID ph thuc vo in p UGS v c xc nh bi biu thc:

U
I D I DSS 1 GS
U GSK

U GS 0 I D I DSS 15mA
2

U GS

2
2V I D 15 1 8, 437 mA.
8

U GS

4
4V I D 15 1 3, 75mA.
8

U GS 6V I D 15 1 0,9375mA.
8

Bi tp 2-15. Cho mch in dng J-FET knh N nh hnh 2-19. c tuyn ca J-FET nh hnh
2-14. Bit E = 15V; im lm vic tnh c chon ng vi RD = 1k.
a) Xc nh tr s RS.
b) Xc nh thin p UGSO.
c) in p trn cc mng UD.
Bi gii
a) in tr RS c xc nh theo biu thc:

U GDK
8
RS

266
2 I DSS
2.15.103

RD
UV

U GSO RS I D 266.7,5.10 3 2V

b) Thin p

( y I D
c)

+E

U.ra

RG
RS

I DSS 15
7,5mA )
2
2

hnh 2.19

in p UD

U D E I D RD 15 7,5.10 3.103 7,5V

Bi tp 2-16. Cho mch to thin p cho J-FET knh N bng phng php phn p nh hnh 220. Bit: E = 15V; R1 = 600k; R2 = 150k ; RD = 1,5k; RS = 1k; IDO = 5mA.
a) Xc nh UGS.
b) Dng in cc mng ID.
c) in p trn cc mng UD.
Bi gii
a) in UGS
U GS

E
15.150.103

.R2 I S .RS
5.103.103 2V
3
R1 R2
(600 150).10

in p trn cc ca

UG

E
15
.R2
150 3V
R1 R2
600 150

in p trn cc ngun U S U G U GS 3 ( 2) 5V
hay

R1

RD

hnh 2.20

U S I S .RS I D .RS 5.10 3.103 5V

b) Xc nh li dng cc mng ID

+E

R2 RS

ID IS

US
5
3 5.103 A 5mA
RS 10

c) in p trn cc mng UD
UD = E - IDRD = 15 5.10-3.1,5.103 = 7,5 V
in p

U DS U D U S 7,5 5 2,5 V

Bi tp 2-17. Cho mch in dng MOSFET knh t sn nh hnh 2-21a v c tuyn truyn
t nh hnh 2-21b. Bit E = 12V; RG = 200 k; USO = 3,5 V.
a) Hy xc nh tr s in tr R1 to thin p yu cu UGSO = -2 V.
b) Xc nh dng in IDO.
R1

RD

+E

Bi gii

Ura
UV

a)
R2

RS

hnh 2.21

UGSO = UG USO
UG = UGSO +
USO = -2 +3,5 =
1,5 V
V dng IG = 0
nn c th vit

UG

Suy ra

R1

E.RG
RG
UG

Thay s:

R1

12.200
200 1400k 1, 4 M
1,5

E
.RG
R1 RG

b) Dng IDO = 5mA ng vi UGSO = -2V ( xc nh trn th 2-21b).

Bi tp 2-18. Nh bi 2-17. Nu chn im lm vic ng vi UGSO = -2V,dng IDO=5mA;
in tr RD = 1,2 k.
a) Hy xc nh in p UD.
b) Tnh in tr RS.
c) Khi in p vo thay i trong khong -2V 0,5 V, hy xc nh bin in p ra v h
s khuch i K0.

Bi gii
a) in p: UD = E IDORD = 12 5.10-3.1,2.103 = 6 V
b) in tr RS.

U S I S .RS I DO RS RS

US
3,5

700
I DO 5.103

d) Khi in p vo UGS thay i trong phm vi 2V 0,5V, xc nh trn th

2-2b dng ID thay i t 2,5mA n 6,25mA, nh vy bin thin dng ID t
nh-nh
ID = 6,25 2,5 = 3,75mA
in p ra ( nh nh) s bin thin
Ura = IDRD = 3,75.10-3.1,2.10-3 = 4,5 V
H s khuch i in p

KU

U ra 4,5

4,5
UV
1

Bi tp 2-19. Mt MOSFET knh t sn c c tuyn truyn t nh hnh 2-22.

a) Cn c vo c tuyn xc nh h dn ti vng ngho UGS = -2V v ti vng
UGS = +3 V.
b) Cho nhn xt.
Bi gii
a) Ti vng ngho, theo th
UGS = -2V ID = 1,2 mA
UGS = -1V ID = 2,5 mA
UGS = 1V
ID = 2,5 mA -12 mA = 1,3 mA
H dn g m

I D
mA
1,3
hay 1,3mS (milisimen)
U GS
V

Ti vng giu UGS = +3 V ID = 10mA

UGS = +4 V ID = 15mA
H dn g m

I D
15 10
mA

5
hay 5mS
U GS
43
V

b) Nhn xt :
vng giu h dn ca MOSFET ln hn vng ngho.
Bi tp 2-20. Cho mch in dng J-FET knh N nh hnh 2-23. Bit RG = 1,5 M;
RS = 300 ; RD = 2,2 k; Rt = 15 k; E = 15V.
a)
b)
c)
d)

Xc nh in tr ti xoay chiu R.
H dn ng ti UGS = -2 .
Tnh h s khuch i Ku.
Tnh in p ra Ura nu UV = 0,5V.
Bi gii

a) in tr ti xoay chiu R

+E
3

RD .Rt
2, 2.10 .15.10

1,92k
RD Rt
2, 2 15 103
U

Ura

Rt

b) H dn ti gc:

g mo

RD

2I
2.15
mA
DSS
5
hay 5mS
U GSK
6
V

RG
RS

hnh 2.23

H dn ti im UGS = -2V.

U
2
mA

g m g mo 1 GS 5mS 1 3,33
U GSK
6
V

c) Tnh h s khuch i
KU g m R 3,33.10 3.1, 92.103 6,393.
d) Xc nh in p ra
U ra KU .UV 6,393.0,5 3,196 V
Bi tp 2-21. Mt MOSFET knh t sn c dng bo ha IDSS = 15 mA, in p kha UGSK =
15mA, in p kha UGKS = - 6 V. Hy xc nh dng ID ng vi cc gi tr UGS sau: UGS = 0V;
UGS = 2,0 V; UGS = -2,0 V.

Bi gii

- Khi UGS = 0 ID = IDSS = 15 mA.

- Khi

U GS 2V I D I DSS

U GS
1

U GSK

15.103 1
6

- Khi UGS = -2 V ID = 15.10-3 1

6

26, 66mA

6, 6mA

Bi tp 2-22. Mt MOSFET knh N cm ng c c tuyn truyn t v mch in nh hnh 224.

a) Hy xc nh bng phng php th h dn gm ta im lm vic O(8V, 7,5V).
b) Tnh tr s RD.
c) Tnh in p ra nu in p vo bin thin 1V.
+15 V

Rg

Rd
Ura

Uv

hinh 2.24 b

Bi gii
a) Xc nh h dn gm.
gm
b) in tr RD

RD

I D
7,5mA 5mA 2,5.103
mA

2,5
hay 2,5mS
U GS
8V 7V
1
V

E U DS
15 8

933 chn RD = 1k
I DO
7,5.103

( y UDS = UGS = 8 V v IG = 0 ).
c) Xc nh Ura nu UV = 1 V.
Ura = KU. UV = gm.RD..UV = 2,5.10-3 .10-3.1,0 = 2,5 V

Bi tp 2-23. Cho mch in dng J-FET knh N nh hnh 2-25. Bit: E = 12;RG =1M; UGSO =
1,2 V. in p trn RS, RRS = 0,2E = 2,4 V. H dn gm = 5

mA
. in tr cc mng ngun rds =
V

200k. RD = 0,1rds = 0,1.200k = 20k.

a) Tnh in tr R1.
b) Tnh h s khuch i KU.
R1

RD

Ura

Bi gii
UV

a) Tnh R1
UGSO = URS - URG = ID RS - E

Suy ra

R1

RG
R1 RG

E.RG
E
RG RG
1
U RS U GSO
U RS U GSO

12

1 9M .
2, 4 1, 2

106

b) H s khuch i KU.
KU = gm.RD = 5.10-3.20.103 = 100

BI TP CHNG 3
Bi 3.1 cho tng khuch i BJT nh trn hnh 3_1
a)
b)
c)
d)
e)

+E

xc nh re
xc nh tr khng ca tng Rv
xc nh tr khng ca tng Rra ( vi ro=)
xc nh h s khuch i in p Ku (vi ro=)
xc nh h s khuch i dng in Ki ( vi ro=)

RG

RS

hnh 2.25

R c 3k

R b 470k

ECO 12V

Ira
IV

C2 10uF

C1 10uF

Ura
T

= 100

UV

ro = 50k

RV

Rra

Bi gii:
Chn Transistor T loi Si v thin p UBEO= 0.7 V
a) Dng tnh IBO s l :
IBO = (ECC UBO) / RB = (12V 0.7V) / 470K = 24.04A
Dng tnh IEO s l:
IEO = (1+)IBO = (1+100)24,04.10-6A = 2,428mA
in tr re c xc nh
re = UT / IEO = 26.10-3 / 2,428.10-3 = 10,71
b) Tr khng vo c tnh :
RV = RB // rVT
Trong rVT tr khng vo ca transistor
rvt = re = 100.10,71 = 1,071k
RV = 470 // 1,071 = 1,069k
c) Tr khng ra ca tng c tnh:
Rra = RC // ro = RC // = RC = 3k
d) H s khuch i in p ca tng :
KU = -RC / re = -3.103 / 10,71 = -280,11
e) V RB > 10rVT = 10.re (470k > 10,71k)
nn Ki = 100

Bi tp 3-4: Tnh ton lp li cho bi tp trn hnh 3-2. Vi r0=50k

R3 168k

R1 56k

C2

VM1

Ura

C1 10u
Ira

Iv
R2 8.2k

R4

C3 20u

Rv

hnh 3-2
Bi gii:
Chn transistor T loi Si vi thin p UBEO=0,7V
1.
a. Ta c:

Kt qu l:
b.Ta c:

c.

d.

e.

+EDD
R
E

RG
+

UV

C1

Bi tp 3-6

2k
+

C2

Hy xc nh :

re , RV , Rra , KU , K i

Bi Gii

a) in tr re c tnh nh sau :

T :

I BO

Ecc U BEO
35,89 A
RB (1 ) RE

I EO (1 ) I BO 4,34mA

re

UT
5,99
I EO

b) V in tr RE s b ngn mch i vi thnh phn xoay chiu ca tn hiu qua t Ce nn :

RV RB / / rVT
Nn :

c)

m rVT

.re

RV RB / / .re 470k / /120.599 717, 7

Rra RC 2, 2k

RC 2, 2.103

367, 28
d) KU
re
5,99

e) K i

Bi3.8

RB
120.470.103

119,82
RB rVT 470.103 718,8

+Ecc 12V
Rb

220k

= 100

Uv

C1
T

r0 = 25k

C2

Re

a)
b)
c)
d)
e)

Ura

3,3k

re?
RV?
Rra?
KU?
Ki?
Bi lm

Mch tng ng:

///

hic

a)
hic.vcc

T:

Nn:
b)
V r0 << hay r0 < 10RE nn rVT c tnh nh sau:

1/hoc

c)

d)

e)

Bi3.15: Cho mch khuch i dung transistor E-MOSFET nh trn

ID = 6mA
UGS = 8V
UT = 3V
gd = 20S (0,24.10-3 A/V2)
K = 0,24.10-3 A/V2
UGSO = 6,4V

IDO = 2,75mA.
Hy xc nh:
a.
b.
c.
d.
e.

Gm
Rd
Rv
Rra
Ku

BI GII
a. gm= 2k(UGSO - UT) = 2.0,24.10-3(6,4 - 3) = 1,63mS

b. rd =

c. Rv =

=50k

=2,42M

d. Rra = RG // rd //RD = 10M // 50 M // 2 M = 1,92 k

e. Ku = -gm.(RG// rd //RD) = -1,63mS.( 10M // 50 M // 2 M) = - 3,21

Bi 3-19: Cho b khuch i in t nh hnh bn di. Xc nhK U, RV, Rra, Ura, Ut vi UGS =
-1,9 V, IDO = 2,8 mA, Rt = 10 k, IDSS = 10 mA, UP= - 4V; T1 & T2 cng loi v c cng cc
tham s.

Bi gii:
Tng 1:

KU1 = -gm.R1 = - 2,625.2,4 = - 6,3

RV1 = R2 = 3,3 M
Rra1 = R1 = 2,4 k
Tng 2:

KU2 = -gm.R5 = - 2,625.2,4 = - 6,3

RV2 = R4 = 3,3 M
Rra2 = R5 = 2,4 k
H s khuch i ton mch:
KU = KU1.KU2 = (-6,3)(-6,3) = 39,69
in p ra:
Ura = KU.UV = 39,69.10 (mV) = 0,397 (V)
Tr khng vo:
RV = RV1 = 3,3 M
Tr khng ra:
Rra = Rra2 = 2,4 k
Khi mc ti, in p trn ti:

Bi 3-21: Cho b khuch i nh hnh 3-17. Hy xc nh RV;Rra;Ku v Ura vi gm=2,6mS;

RV1=953,3; IDS= 10mA; UP= -4V; = 200; Ku2= -338,46.

+Ecc
20V
R1

R7

2.4K

15K

R5
2.2K

C1

C2

C4

1nF

0.5uF

T1

Ura

T2

0.05uF

Uv = 1mV

RG

R2

C3

R4

R6

C5

3.3M

680

100uF

4.7K

1K

100uF

Hnh 3-17
Bi gii:
H s khuch i ca tng th nht:
K U 1 g m ( R D // RV 2 ) 2,6mS ( 2,4k // 953,6) 1,77

H s khuch i Ku s l:
K u K u1 .K u 2 ( 1.77)( 338,46) 599,1

in p ng ra:
Tr khng vo:
Tr khng ra:

Ura =Ku.Vu=599,1mV=0,6V
Rv = RG=3,3M
Rra = RC = 2,2K = R5

Bi 3-22: Cho tng khuch i Cascode nh trn hnh. Hy xc nh K u ca tng khuch i vi

UB1 = 4,9V; UB2+Ecc
= 10,8V; IC1 = IC2 = 3,8mA = IC IE; 1 = 2 = 200; T1 = T2 =T
20V
R5
2.2K

C4
0.5uF

Ecc = 18V
Ura

R1

RC

6.8K

1.8K

C
T2

Ura = Ura2

C2
T2
R6

C5

1K

100uF

R2
5.6K

Ura1

C1
T1

Uv = 25uV

R3

RE

4.7K

1.1K

CE

Bi gii:
re

26 mV
26

6,8
IE
3,8

Ku
Ku

RC
r
e 1
re
re

RC 1,8.103

265
re
6,8

Vy Ku = Ku1.Ku2 = -265
Bi 3.23: Cho tng khuch i Darlington nh trn hnh. Hy xc nh h s khuch i dng
in Ki.

Bi gii:
V li s tng ng.

Bi 3.24:Cho tng khuch i Darlington nh trn hnh. Xc nh RV, Rra, Ki, Ku, vi rVT1 = 3k.

Bi gii:

Bi 3.37:
Ec c 20V

R 2
56k
C 1
Q 1

B=120

r0=40k
C 2

Uvao

R 1
8 .2 k

R 3
2k

Ura

Thevenin

p dng K2 cho vng mch I ta c:

IBRB + VBE + IERE = VB

M IE = (1 + )IB
IB[RB + (1+)RE] = VB
IB

VB
(*)
R B (1 )R E

Ta c:

VB

R1 Vcc 56 20

17.45V
R1 R 2 56 8.2

RB= R1\\R2=

R 1 R 2 56 8.2

7.15k
R1 R 2
64.2

20
103 42.65 A
56 201 2
IE= IB(1+) =42.65 ( 200 + 1)=8.57mA
Mt khc:
IE = I C + I B
IC= IE + IB= 8.57 0.04 8.53mA
Ta c:
26
26

3.04
re=
I E 8.57
Ta c:
Zin=RB//(re +RE)
=7.15//200(2.003)
=7.03k

R
Zout R E / / re B
1

= 2000//(3+35.57)
=37.84
RE
2000
Av

0.998
re R E 3.04 2000
RB
7.15
Ai

3.507
RB
7.15
re R E
0.003 2
200

(*) I B

Bi tp 3-31 : Hy xc nh Kc ca tng vi sai sao cho trn hnh 3-27 di y :

T1 & T2

rVT1=rVT2=rVT
=11k
T3

Ro3=RE=200k

Hnh 3-27
Bi gii
Transitor T3 kt hp vi cc knh kin mc trn mch to thnh mt ngun dng nhm nng cao
tr khng mt chiu RE v v th khi thay cc gi tr vo biu thc Kc ta c :

= 24,7.10-3
Bi tp 3-33:
Rb= 1M, Rc= 4.7K, = 90, r0=
Ecc=? Ku= -200

Tr khng ra ca tng c tnh:

Rra = Rc//r0 = Rc// = Rc= 4.7k
H s khuch i in p ca tng:
Ku=

=> re=

= 23.5()

Ta c:
re=

=>

Dng tnh

= (1+)

=>

= 1.106 (mA)

l:

=>

= 12.15A

= 12.15.106 + 0.7 12.15.106(V)

R3

5 F

C3

12
k

R4

R2

5F

1.2
k

10F

Tr khng vo ca tng c xc nh theo biu thc:

Rb = R1 \\ R2 = 10,2 k
Rv = Rb \\ h11e = 10,2 k \\ 2,75 k = 2,17 k
Tr khng ra ca tng c xc nh theo biu thc:
Rra =

\\ Rc =r0 \\ Rc = 40 k \\ 2,2 k =2,09 k

y
= r0 = 40 k
H s khuch i in p ca tng s l:
Ku = -

=-

H s khuch i dng in s l:
Ki =

= h21e = 180

re = r0 = 40 k

= - 136,5

R3 (Rc)

C1

hoe

hie
Rb = R1\\R2

R1

68k

Mch tng ng

2,2
k
C2

Bi 3.44: Cho tng khuch i dng J-FET nh trn hnh di. Hy xc nh Rv; Rra; Ku vi
IDSS = 10mA; Up = -4V; rd = 40k.
EDD 18V
RD
1,8k

C1

UV

C2

RV

RG
1M

Rra

1,5
V

Bi Gii:
Mch tng ng tn hiu nh AC:

+
Dgs
_

+ Zin = Rv =

= RG = 1M

+ Zout = Rra = rd // R D = 40k / /1,8k = 1,7k

VGS = VG VS = 1,5V

gm =

gm =

+ Ku =

Bi 3.47:
Mch tng ng tn hiu nh AC

= 3,125.10-3

= - gm.rd // RD = 3,125.10-3.1,7.103= 5,3125

y l mch CS

Tng tr vo:
Rv = = 9.7M
Tng tr ra:
Rra = =1.96k

Ta c
VGS = VG VS = =17.63V

Gm = (1 - )= -0.04
Av== =78.4V
Ura = Uv.Av=1.568V

Bi 3.55:
Ta c: iout =gm.vgs +
v vgs = vi - io.RS

vo v s
i0 .R D io .R S
= gm.vgs +
rd
rd

nn i0 = gm .(vi io.RS) +

i0 .R D io .R S
rd

g m vi
v
R RS = - o
io =
1 g m .RS D
RD
rd
g m .RD
6000 s 6,8k
vo
6,8k 3,5k = 1,85
R RS =
Suy ra: Kv =
=1 6000 s 3,5k
1 g m .RS D
vi
rd

vi rd = 1/ gd =1 / 35 s

285,71k

285,71 k

Ura = UV . KV = 4mV . 1,85 = 7,4 mV

Bi 3.56:
Tnh ton lp li nh bi tp 3.54 trn hnh 3.46 vi gd = 50S; gm = 3000S.

Gii:
RV =( IIN. *Rg )/ Iin = Rg = R1//R2 = 12.88M.
Rra = Vout /Iout = ( rd + Rs ) // Rd = 2.56K.
Ku = Vout / Vin = -gm(rd // Rd ) / (1+gm*Rs) = -0.49V

Bi 3-63

EDD 20V
RD

C2

C1

Uv

Ura
RG

10M

RS

S mch tng ng tn hiu nh AC

C3

Uv

G
RG

rd

v gs

40K

10M

Ura

gm v GS

RD

S
Xc nh RD, Ta c:
gm =

= 5,3mS

Mt khc:
KU =- gm (RD// rd)
-10 = -5,3mS(RD// rd)
Nn : (RD// rd) =
Vy:

= 1,875k

RD = 0,54k

Xc nh RS:
UGS = UG - US = -IDRS
M: ID =

= 8mA

Vy RS = 0,125k

Bi 3.64:Cho
i 2 tng nh
Hy xc nh
Vi IDSS =
-4,5V.

b khuch
trn hnh.
in p Ura.
8mA, Up =

Bi gii:
Tng 1.
ECC = ID1(R2 + R3)

UGS1 = UG1 US1 = -ID1.R3

= - 6,95.390 = - 2,71 V

KU1 = -gm.R2 = -1,41.2,2 = - 3,102

RV1 = R1 = 10 M
Rra1 = R2 = 2,2 k
Tng 2:
ECC = ID2(R5 + R6)

UGS2 = UG2 US2 = -ID2.R6

= - 6,95.390 = - 2,71 V

KU2 = -gm.R5 = - 1,41.2,2 = - 3,102

RV2 = R4 = 10 M
Rra2 = R5 = 2,2 k
H s khuch i ton mch:
KU = KU1.KU2 = 3,102.3,102 = 9,622
Ura = KU.UV
Bi 3.65 & 3.66: Cho b khuch i 2 tng hnh di. Xc nh h s khuch i K u, Rv, Rra
vi IDSS =6mA, UP = -3V, = 150.

Bi gii:
Tng 2:

Ta c:

EB = IB.RB + UBE + IE.R7

RV2 = RB // re = 31,32
Rra2 = R6 = 2,7 k

Tng 1.
ECC = ID(R2 + R3)

UGS = UG US = -ID.R3
= -4,69.330 = - 1,55 V

KU1 = -gm.(R2 // RV2)

= -0,86.(1,8k // 31,32) = - 0,027
RV1 = R1 = 10 M
Rra1 = R2 = 1,8 k
Tr khng vo ca b khuch i:
RV = RV1 = 10 M
Tr khng ra ca b khuch i:
Rra = Rra2 = 2,7 k
H s khuch i in p:
KU = KU1.KU2 = (-0,027).(70,24) =1,896

Bi3-70: Cho mch in dng JFET nh trn hnh 3-57. Hy xc nh dng din I vi IDSS =
6mA; UP = -3V
EDD 18V

RD 2k

Bi gii
Ta c:

Khi ID = 0 ta co Up = -3V

(1)
V y l JFET knh N nn ta gii phng trnh (1) ta ly nghim UGS = -3V
Vy

Bi 3.71

R3 1.8k

R2 4.3k

R1 4.3k

+Eee -18V

Ta c:
UB=R1.(-EEE)/(R1+R2)=4,3k.(-18)/(4,3k+4,3k)= -9V
UE=UB-UBE= -9-0,7= -9,7 V
I=IE=(UE-EEE)/RE= [-9,7-(-18)]/1,8k= 4,61 (mA)
BI TP CHNG 5
Bi 5.1: Cho mch KTT nh hnh v. R1 = 10k, RN = 500k, Rp = 10k, E = 12V. Vit biu
thc Ura & Tnh Ura nu Uv = 0,2V v cho nhn xt.

Bi gii:
a) U ra

RN
.U N
R1

b) U ra

RN
500
.U N
.0, 2 10V
R1
10

in p ra -10V ln hn E = -12 V nn tn hiu ra nm trong vng tuyn tnh, khng b

mo.
Bi 5.2: Hy tnh ton v thit k mch khuch i thut ton vi cc yu cu sau:
a) in p ra ngc pha vi in p vo.
b) Nu UV=0,5V th Ura=15V. in tr vo RV=20k
Bi gii:
a) V in p ra ngc pha vi in p vo nn y l mch khuch i o c s nh
hnh v:

H s khuch i:
K

U ra 15

30
Uv
0,5

K=

RN
= 30
R1

Mtkhc
suyra RN = 30R1

V R1 chnh l in tr vo R1 = Rv = 20k
Suy ra RN = 20k.30=600k
Bi 5.3: Cho mch nh hnh v. Bit R1=20k, RN=780k, R2=20k, E=15V
a) Vit biu thc xc nh Ura

b) Tnh Ura nu bit Uv=0,3V

Bi gii:
a) V in tr vo ca p rt ln nn c th coi khng c dng qua R2 nn in p UV=UP
R
R
U ra (1 N )U P (1 N )UV
R1
R1
780
U ra (1
).0, 3 12V
a)
20
Ura = 12V < E = 15V tn hiu ko b mo
Bi 5.5: Cho mch nh hnh v:
y l mch g ?vit biu thc tnh Ura

Bi gii:
a) y l mch tr, thc hin thut ton Ura=AUv2-BUv1
thit lp biu thc Ura, tin hn c l gii theo phng php xp chng
Nu ch tc ng ngun tn hiu Uv1, y l mch khuch i o

Ura1 =- . Uv1
-

Nu ch tc ng Uv2, y l mch khuych i thun

Ura2 = (1+ ) .
in p ra: Ura1 + Ura2 = (1+

).

.Uv2
.Uv2 -

.Uv1

b) Thay s vo
Ura=(1+

).

.1,0-

.0,15 = 6,65V

Bi 5.6: Thit k v tnh ton mch khuch i thut ton th hin thut ton sau:
Y=2a-4b *
Trong : Y l in p u ra
a v b l hai in p vo
4 v 2 l h s
Bi gii:
thc hin thut ton trn phi dung mch tr.

a) Xc nh biu thc in p ra
Y= (1+ ).

.a- .b **

So snh biu thc ** v * suy ra

(1+ )

=2

=4

= 4. Suy ra RN =4R1
Thay

= 4 vo:
(1+

=2 --> (1+4).

=2

= suy ra R2 = .Rp =1,5Rp

Nh vy thc hin thut ton trn phi chn:
RN =4R1 v R2 = 1,5Rp.
Nu R1 = 20k th RN =80k
Nu Rp =20k th R2 = 30k.
Bi 5.7: Cho mch khuch i thut ton nh hnh v
a) Vit biu thc tnh h s khuch i KU
b) Tnh tr s Ura

Bi gii:
a) y c th coi nh hai tng khuch i mc k tip nhau, IC1 c h s khuch i K1,
tng IC2 c tng s khuch i l K2.
H s khuch i Ku c xc nh:

Ku =
Trong : K1=(1+

=K1K2

K2 = -

. Suy ra: Ku = K1.K2 = (1+

).(-

) = -(1+

b) Tnh Ura
Ura = Ku.Uv = -(1+

). .Uv = -(1+

).

.0,15 =-16,5V

Nhn xt:V in p ngun -E = -15V trong khi U ra = -16,5V, nh vy in p ra b xn

nh, nn b mo. in p ra tuyn tnh phi gim Uv hay gim h s khuch i Ku.
Bi 5.8: Xc nh phm vi iu chnh in p ra trong mch nh hnh v. Bit R1 = 10k, RN =

250k, RP = (0 20)k, Uv =0,2V

Bi gii:
- Vit biu thc in p ra
Ura =-

.Uv

- in p ra s cc tiu khi chit p Rp =0

Ura =- .Uv =-

.0,2 =-5V

- in p ra s cc ai khi Rp =20k
Ura = -

.Uv =-

.0,2 =-1,66V

Nh vy in p ra s bin thin trong khong t -5V n -1,66V khi iu chnh chit p

Rp.
Bi 5.9:Cho mch KTT nh hnh 5-10. Bit R1 = 15k, R2 =250k ; R3 =20k, R4 =470k ;
E=+9V, Uv = 25mV ; IC TT l l tng
R1 250k

R2 250k
I3

I2
I1

+E

R4 250k

R3 250k

I4
Ura

Uv

+
-E

Hnh 5-10

a) Vit biu thc h s khuch i Ku.

b) Tnh tr s Ura v cho nhn xt.
Bi gii:
Dng in ti nt N
I1= I2 +IN v IN =0 nn I1 =I2
Trong
Suy ra:

I1 =

;I2 =

V N l im t o, nn UN = Up =0
V cui cng

=-

.Suy ra UM = -

.Uv *

Ti nt M: I2 +I4 I3 =0
-

+
=

=0

Thay gi tr UM t * vo v gii ra ta c.
Ura = - .R4 (
H s khuch i

).UV

U1 OPA1013E

K=

=-

.R4 (

Tnh in p ra:
Ura = -

.470(

).25.10-3= 11V

in p ra Ura = 11V >+E = 9V. Tn hiu ra b xn nh.

Bi 5.10:Cho mch cng o nh hnh 5.11. Bit R1 = 20k, R2 = 25k, R3 = 30k; RN = 500k, U1 =
0,1V, U2 = 0,2V, U3 = 0,3V.
a) Vit biu thc Ura.
b) Tnh Ura.
RN 500k
U1

R1 20k
+E

U2

R2 25k

U2

R3 30k

Ura

-E

U1 OPA1013E

Hnh 5-11

Bi gii:
a) y l mch cng vi 3 in p vo U1 , U2 , U3 ;gii mch theo phng php xp chng:
Ura1 = -

.U1

Ura2 = -

. U2

Ura3 = -

. U3

Ura = Ura1 + Ura2 + Ura3 = -[

=- [
b) Thay s vo

.U1 +

U2 +

.U1 +

.U2 +

.U3] = -[25U1 + 20U2 +

.U3 ]
.U3]

Ura = -[

.0,1 + 20.0,2 +

.0,3] = -11,5V

Bi 5.11:Cho mch in nh hnh 5-12. R2 = 20k; R3 = 30k ; R4 = 250k ; R5 =10k

a) Vit biu thc h s khuch i Ku.

b) Xc nh tr s Ura nu bit:Uv= =
0,5V; R1=20k

Uv i

R1 20k
+

R3 30k
+

Ura

+
R4 250k

-E

R2 20k

-E

IC1

+E

+E

U2 OPA1013E
IC2

U1 OPA1013E

R5 10k

Hnh 5-12

Bi gii:
a)

H s khuch i Ku = K1.K2
trong K1 = 1 y l mch lp in p Ura =Uv
K2 = 1+ ( ) v Ku = (1 +

b)

in p ra
Ura = (1 +

).

.Uv = (1+

.0,5 = 5,2V

Bi 5.12:Cho mch in nh hnh 5-13. Bit RN = 500k, R1 = 25k, +E = +12V, in p bo

ha +10V. Xc nh in p vo cc i m in p ravn trong phm vi tuyn tnh.
Xc nh Ura vi cc gi tr Ura = 0; Uv = 0,4V.
RN 500k
R1 25k

+E

Uv
+

Ura
-E

U1 OPA1013E

Bi gii:

H s khuch i:
K=-

=-

= -20.

in p vo nh nh Vp-p
|Uvp-p| = Ubo ha/|K| = +0,5V
Ura = -

.Uv = -

.Uv =-20Uv

Tnh tr s Ura
Uv

Ura

0V

0V

+0,4V

-8V

-0,4V

+8V

Bi 5.13:Cho mch khuch i nh hnh 5-14

a)
b)

Vit biu thc Ura1 v Ura2

Tnh tr s Ura1 v Ura2 nu bit:Uv = 0,5V, R1 = R2 = 20k; R3 = 30k; R4 = 25k, Xc
nh Ura vi cc gi tr Ura = 0; Uv = 0,4V.R5 = 500k; R6 = 500k; R7 = 25k

R5 500k
R4 25k

+E

R2 20k

+
R1 20k

-E U2 OPA1013E

+E
-

Uv
+

R3 30k
+E

-E
+

U1 OPA1013E

R7 25k

Hnh 5-14

Bi gii:

Ura1

+
-E
R6 500k
U3 OPA1013E

Ura2

a)

b)

Ura1 = K1.K2.Uv; trong K1 l h s khuch i ca IC1

K2 l h s khuch i ca IC2
Ura1 = -

. ( ) . Uv = +

Ura1=

. Uv =

. Uv

Thay s ta c:

Ura2 = -

(1+

.0,5 = 10V
).0,5 = -10,5V

Bi 5.14:Cho mch khuch ai thut ton nh hnh 5.15.

a) Vit biu thc Ura.
b) Xc nh tr s Ura nu bit:

U1 = 0,2V ; U2 = 0,3V.
R6 60k

R1 = 20k ; R2 = 500k ; R3 = 25k

R1 20k
+
U1

R4 = 20k ; R5 = 30k ; R6 = 60k

+
-E

U1 OPA1013E
IC1

Bi gii:
y l b khuch i c hai tng IC1 v IC2 c hai in p
a)
vo
Trc ht xc nh in p Ura1
Ura1 = ( 1 +

).U1 .

y chnh l in p a vo ca o ca IC2.
Gii mch in IC2:
Ura = ( 1 +
=-[ (1 +
b)

).U1 .() U1.

. U2

. U2 ]

Thay s vo tnh Ura

Ura = -[ (1+

).0,2.

Bi 5.15:Cho mch in nh hnh 5-16

Bit R1 = 20k ; R2 = 20k
R3 = 600k ; R4 = 30k
R5 = 30k ; R6 = 50k
R7 = 150k ; Uv = 0,1V
a) Hy vit biu thc Ura = f(UV).
b) Tnh tr s Ura.
U1
Bi gii:
a) Thit lp biu thc Ura

. 0,3 ] = -13,2V

Ura1
R2 500k

+E

R4 20k
R5 30k
U2

R3 25k

+E
+

+
-E
IC2

U2 OPA1013E
Hnh 5-15

Ura2

R1

Ura = - [

.(1 +
(1+

R4

R6

) ]U

) ].0,1 = - 6,8V

)Uv

+ (1 +

R5

b) Thay s vo tnh Ura

Ura = - [

.Uv

R2

).Uv

- C hai in p ny u a
vo u vo o ca IC2 nn y l
mch cng o.
Gii theo phng php xp
chng:
Ura = -

Ura

Ura2 = ( 1 +

R3

U2

-in p u ra IC1:
Ura1 = Uv
v y l mch lp in p.
-in p u ra IC2:

Bi 5.16
in p u ra ICi
Ura1 = U2 , y l mch lp in p vo
in p u ra IC2
Ura2 =

y l mch cng o

C hai in p Ura1 v Ura2 u c a vo ca o ca IC3 , IC3 l mch cng o

Gii theo phng php xp chng ta c:
Ura =

.U2

( - U1

= - U2 +

=-

.20.10-3 +

U1 +

U2)
U2 )

.3010-3 +

.2010-3) = 4,5V

Bi 5.18

Uv

C
+

Ura2

Ura

a) Chc nng trn l mch vi phn, s nh hnh 5-19a

Ura = - RC

76

= -2.103 . 0,4710-6
= -2.0,47.10-3.2.1000
= - 1,88
b) Dng in p ra
2V
1,88
V

c)
Bi 5.20

R2

Uv2

Uv1
1

R1

Ura
a

a)

Xc nh biu thc Ura

Phng trnh dng in ti nt N

C
Suy ra

+C

= -(

Ura= -

=0
)
dt

b)

Tnh Ura , y R1= R2 =R=100k, nn c th vit :

c)

Ura = -

dt

Ura= 1(V)

77