557 PDF

BC556B, BC557, A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
http://onsemi.com
COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Value
Unit
VCEO
BC556
BC557
BC558
Collector-Base Voltage
Vdc
65
45
30
VCBO
BC556
BC557
BC558
Emitter-Base Voltage
Vdc
Collector Current Continuous

Collector Current Peak
IC
ICM
100
200
mAdc
Base Current Peak
IBM
200
mAdc
Total Device Dissipation

@ TA = 25C
Derate above 25C
PD
Total Device Dissipation

@ TC = 25C
Derate above 25C
PD
625
5.0
mW
mW/C
1.5
12
Watts
mW/C
55 to
+150
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RJA
200
C/W
Thermal Resistance,
Junction to Case
RJC
83.3
TJ, Tstg
THERMAL CHARACTERISTICS
Semiconductor Components Industries, LLC, 2001
June, 2000 Rev. 1
2
3
EMITTER
80
50
30
5.0
Characteristic
Vdc
VEBO
Operating and Storage Junction

Temperature Range
2
BASE
C/W
CASE 29
TO92
STYLE 17
ORDERING INFORMATION
Device
Package
Shipping
BC556B
TO92
5000 Units/Box
BC556BRL1
TO92
2000/Tape & Reel
BC556BZL1
TO92
2000/Ammo Pack
BC557
TO92
5000 Units/Box
BC557ZL1
TO92
2000/Ammo Pack
BC557A
TO92
5000 Units/Box
BC557AZL1
TO92
2000/Ammo Pack
BC557B
TO92
5000 Units/Box
BC557BRL1
TO92
2000/Tape & Reel
BC557BZL1
TO92
2000/Ammo Pack
BC557C
TO92
5000 Units/Box
BC557CZL1
TO92
2000/Ammo Pack
BC558B
TO92
5000 Units/Box
BC558BRL
TO92
2000/Tape & Reel
BC558BRL1
TO92
2000/Tape & Reel
BC558BZL1
TO92
2000/Ammo Pack
BC558C
TO92
5000 Units/Box
BC558CRL1
TO92
2000/Tape & Reel
BC558ZL1
TO92
2000/Ammo Pack
BC558CZL1
TO92
2000/Ammo Pack
Publication Order Number:

BC556/D
BC556B, BC557, A, B, C, BC558B, C

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
65
45
30
80
50
30
5.0
5.0
5.0
2.0
2.0
2.0
100
100
100
4.0
4.0
4.0
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
CollectorBase Breakdown Voltage

(IC = 100 Adc)
EmitterBase Breakdown Voltage

(IE = 100 Adc, IC = 0)
CollectorEmitter Leakage Current

(VCES = 40 V)
(VCES = 20 V)
(VCES = 20 V, TA = 125C)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
ICES
BC556
BC557
BC558
BC556
BC557
BC558
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2
nA
BC556B, BC557, A, B, C, BC558B, C

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
120
120
180
420
90
150
270
170
290
500
120
180
300
800
220
460
800
0.075
0.3
0.25
0.3
0.6
0.65
0.7
1.0
0.55
0.62
0.7
0.7
0.82
280
320
360
3.0
6.0
2.0
2.0
2.0
10
10
10
125
125
240
450
900
260
500
900
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 Adc, VCE = 5.0 V)
(IC = 2.0 mAdc, VCE = 5.0 V)
(IC = 100 mAdc, VCE = 5.0 V)
hFE
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
CollectorEmitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see Note 1)
VCE(sat)
BaseEmitter Saturation Voltage

VBE(sat)
BaseEmitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT
BC556
BC557
BC558
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 V,
RS = 2.0 k, f = 1.0 kHz, f = 200 Hz)
SmallSignal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Cob
MHz
NF
BC556
BC557
BC558
dB
hfe
BC557
A Series Device
B Series Devices
C Series Devices
Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.
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3
pF
BC556B, BC557, A, B, C, BC558B, C

BC557/BC558
1.5
-1.0
TA = 25C
-0.9
VCE = -10 V
TA = 25C
-0.8
1.0
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
0.7
0.5
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5 -1.0 -2.0

-5.0 -10 -20
-50
IC, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
-100 -200
TA = 25C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -200 mA
IC = -100 mA
IC = -20 mA
-0.4
-0.02
1.6
2.0
2.4
2.8
-10 -20
-0.1
-1.0
IB, BASE CURRENT (mA)
-0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Cib
TA = 25C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-10
-1.0
IC, COLLECTOR CURRENT (mA)
-100
Figure 4. BaseEmitter Temperature Coefficient
10
7.0
-55C to +125C
1.2
Figure 3. Collector Saturation Region
C, CAPACITANCE (pF)
-50 -100
1.0
-2.0
-0.5 -1.0 -2.0

-5.0 -10 -20
Figure 2. Saturation and On Voltages
VB , TEMPERATURE COEFFICIENT (mV/ C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. Normalized DC Current Gain
-0.8
VBE(sat) @ IC/IB = 10
-20 -30 -40
400
300
200
150
VCE = -10 V
TA = 25C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
Figure 6. CurrentGain Bandwidth Product
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4
BC556B, BC557, A, B, C, BC558B, C

BC556
TJ = 25C
VCE = -5.0 V
TA = 25C
-0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
-1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
0.2
VCE(sat) @ IC/IB = 10
0
-0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200

-0.1 -0.2
-0.5
-50 -100 -200

-5.0 -10 -20
-1.0 -2.0
Figure 8. On Voltage
-2.0
VB, TEMPERATURE COEFFICIENT (mV/ C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
-1.6
-1.2
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25C
0
-0.02
-0.05 -0.1 -0.2

-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
-20
-1.0
-1.4
-1.8
-2.6
-3.0
-0.2
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25C
Cib
10
8.0
Cob
4.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0

-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
-100 -200
Figure 10. BaseEmitter Temperature Coefficient
40
6.0
-55C to 125C
-2.2
Figure 9. Collector Saturation Region
20
VB for VBE
VCE = -5.0 V
500
200
100
50
20
-100
-1.0
-10
-50 -100
Figure 11. Capacitance
Figure 12. CurrentGain Bandwidth Product
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5
r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)
BC556B, BC557, A, B, C, BC558B, C

1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.05
SINGLE PULSE
P(pk)
SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.03
0.02
0.01
ZJC(t) = (t) RJC

RJC = 83.3C/W MAX
ZJA(t) = r(t) RJA
RJA = 200C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RJC(t)
0.1
0.2
0.5
1.0
2.0
10
5.0
20
50
t, TIME (ms)
100
200
500
1.0k
2.0k
5.0k
10
Figure 13. Thermal Response
-200
1s
-100
TA = 25C
-50
3 ms
The safe operating area curves indicate ICVCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
TJ = 25C
BC558
BC557
BC556
-10
-5.0
-2.0
-1.0
BONDING WIRE LIMIT

THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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6
BC556B, BC557, A, B, C, BC558B, C

PACKAGE DIMENSIONS
TO92
(TO226)
CASE 2911
ISSUE AL
A
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
X X
G
H
V
C
SECTION XX
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
--0.250
--0.080
0.105
--0.100
0.115
--0.135
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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7
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
--6.35
--2.04
2.66
--2.54
2.93
--3.43
---
BC556B, BC557, A, B, C, BC558B, C
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be
validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION

Literature Fulfillment:
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Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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JAPAN: ON Semiconductor, Japan Customer Focus Center

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For additional information, please contact your local
Sales Representative.
N. American Technical Support: 8002829855 Toll Free USA/Canada
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8
BC556/D
This datasheet has been download from:

www.datasheetcatalog.com
Datasheets for electronics components.

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BC556B, BC557, A, B, C,

Collector Current Continuous

Base Current Peak

Total Device Dissipation

Total Device Dissipation

Semiconductor Components Industries, LLC, 2001

June, 2000 Rev. 1

Operating and Storage Junction

2000/Tape & Reel

2000/Tape & Reel

2000/Tape & Reel

2000/Tape & Reel

2000/Tape & Reel

Publication Order Number:

BC556B, BC557, A, B, C, BC558B, C

CollectorBase Breakdown Voltage

EmitterBase Breakdown Voltage

CollectorEmitter Leakage Current

BC556B, BC557, A, B, C, BC558B, C

(IC = 2.0 mAdc, VCE = 5.0 V)

(IC = 100 mAdc, VCE = 5.0 V)

CollectorEmitter Saturation Voltage

BaseEmitter Saturation Voltage

BC556B, BC557, A, B, C, BC558B, C

hFE , NORMALIZED DC CURRENT GAIN

-0.5 -1.0 -2.0

Figure 4. BaseEmitter Temperature Coefficient

Figure 3. Collector Saturation Region

-0.5 -1.0 -2.0

Figure 2. Saturation and On Voltages

VB , TEMPERATURE COEFFICIENT (mV/ C)

VCE , COLLECTOR-EMITTER VOLTAGE (V)

Figure 1. Normalized DC Current Gain

-20 -30 -40

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mAdc)

Figure 6. CurrentGain Bandwidth Product

BC556B, BC557, A, B, C, BC558B, C

hFE , DC CURRENT GAIN (NORMALIZED)

VBE @ VCE = -5.0 V

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200

-50 -100 -200

VB, TEMPERATURE COEFFICIENT (mV/ C)

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. DC Current Gain

-0.05 -0.1 -0.2

-0.5 -1.0 -2.0

Figure 10. BaseEmitter Temperature Coefficient

Figure 9. Collector Saturation Region

Figure 11. Capacitance

Figure 12. CurrentGain Bandwidth Product

r(t), TRANSIENT THERMAL

BC556B, BC557, A, B, C, BC558B, C

ZJC(t) = (t) RJC

Figure 13. Thermal Response

IC, COLLECTOR CURRENT (mA)

BONDING WIRE LIMIT

Figure 14. Active Region Safe Operating Area

BC556B, BC557, A, B, C, BC558B, C

BC556B, BC557, A, B, C, BC558B, C

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

N. American Technical Support: 8002829855 Toll Free USA/Canada