1.

Cu trc v cc mode hot ng ca BJT

EBJ (Emiter-Base Junction), CBJ (Colector-Base Junction). Ty thuc vo iu kin phn cc

(thun hay nghch) th BJT s hot ng cc mode khc nhau
Active mode: c s dng nu transistor hot ng nh mt b khuch i
Cutoff and Saturation mode: s dng trong cc ng dng switching
Trong 3 mode hot ng ca BJT th active mode ng vai tr quan trng nht

2. c tnh dng th

BJT npn hot ng trong active mode khi v ch khi

VBE = 0.7, VBC < 0.4 => VCE = VBE VBC > 0.3
BJT npn hot ng su trong saturation mode khi
VBE = 0.7, VBC = 0.5 => VCEsat = VBE VBC = 0.2
BJT npn hot ng trong cutoff mode khi VBE <0.5

a. c tuyn Ic-VBE
Ging vi c tuyn Id- VGS trong mosfet. Tuy nhin c tuyn Id-Vgs t dc hn so vi c
tuyn Ic-Vbe ( V quan h Ic-Vbe theo hm m e). S khc nhau ny dn n mt c tnh
quan trng: gm (BJT) > gm (mosfet)

Hnh trn m phng mi quan h Ic-Vbe trn PDK 250 vi cc nhit khc nhau (10-90).
Nhit cng cao, Vbe cng gim
b. c tuyn Ic-Vce

VA: (in p early) l mt tham s ca BJT c gi tr t 10-100V

Hiu ng early trong BJT (hay cn gi l hiu ng bin iu rng cc base) ging vi hiu
ng bin iu chiu di knh trong mosfet. Ngha l: khi ta tip tc tng gi tr Vce -> tng
rng vng him (V Vce l phn cc nghch) -> Ic tip tc tng

c. Transistor Breakdown

Breakdown Voltage BVCE0 = BVCB0

( PDK 250 ko m phng c 2 gi tr ny )

3. BJT trong thit k mch khuch i

a. c tuyn VBE-VCE
- VCE = VCC - IcRc

b. im phn cc Q BJT khuch i

im Q l im phn cc DC hay cn gi l im tnh. Tn hiu vbe l tn hiu xoay chiu,

VBE l in p phn cc DC. Kt qu ti li ra l tn hiu vce vi bin ln hn nhiu ln so
vi tn hiu vo vbe.
im Q c xc nh da vo VBE v ti RC.

4. M hnh tn hiu nh
a. Transconductance (gm)

Nh ni t u, c tuyn ca Ic-Vbe (BJT) dc hn so vi c tuyn Id-Vgs (mosfet)

Gm (BJT) > Gm (mosfet)

Hybrid- model

T model

b. Bng tm tt

Vi = ta thy trong mosfet ro = .

5. Ba cu hnh khuch i c bn (CE, CB, CC hay Emitter Follower)
a. Common Emitter (CE)

Rin =r
Rout= Rc//ro
b. Cu hnh CE vi in tr Re

Phn tch s dng m hnh ch T

Rin s tng ln mt khong:

-> Ta c th s dng gi tr ca Re iu khin gi tr Rin nh mong mun

-

li in th Av s gim i

p ng tn s c ci thin ng k

c. Cu hnh Common Base (CB)

Cu hnh ny thng t dng

Rin = re
Ro = Rc

li:
Nhn xt:
Li vo v li ra cng pha nn li c gi tr dng
Tr vo c gi tr rt b

, t ph thuc vo gi tr

d. Cu hnh Common Collector (Emitter Follower)

L mt mch rt quan trng trong thit k.
Dng buffer in p
V d trong hnh di: Ta thy nu khng c buffer th p ra ch khong 2mV. Nu c buffer
th p ra ln ti 99mV (do Ro ca buffer rt nh)

c tnh ca mch CC

Rin = ( +1)(re+RL)
Avo = 1
Ro = re
Nhn xt:
Tr vo rt ln
Tr ra rt nh

li nh hn hoc bng 1
S dng nh mt buffer
Bng tm tt c tnh ca cc mch khuch i

6. So snh gia mos v bjt

a. Common Source v Common Emitter

b. Cascode

MOS

BJT

c. CURRENT MIROR
d.

copy dng chnh xc hn th c th dng cc cu hnh:

Base current compensation:

Gng dng Wilson

e. Ngun dng widlar