SEMICONDUCTOR PHYSICS

n0 = ni e ( EF Ei ) / kT

Equilibrium:

n0 p 0 = ni2

p0 = ni e ( Ei EF ) / kT
n =
c e ( Ec Fn ) / kT = ni e ( Fn Ei ) / kT

Steady state:

p =
ve

( x) =

( F p E v ) / kT

= ni e

np = ni2 e

( Ei F p ) / kT

( Fn F p ) / kT

dV ( x) 1 dEi
=
dx
q dx

d ( x)
d 2V ( x ) ( x ) q
=
=
= ( p n +
d+
a )
dx

dx 2

Poisson:

qt
m

vd

Drift current density:

Conduction Current:

( low fields , ohmic )

{= vs ( high fields , saturaded vel .)

1 + / v s

Ix
= J x = q(n n + p p ) x = x
A
dn( x)
J n ( x) = q n n( x) ( x ) + qDn
dx
drift
diffusion
dp( x)
J p ( x) = q p p( x) ( x) qD p
dx

Conductivity:

= q ( n n + p p )

Resistivity:

L
L
=R
W t
W
dV
+ J displacement = J n + J p + C
dt
p( x, t ) p
1 J p p
=
=

q x p
t
t
R=

Resistance:

J total = J conduction
Continuity:

For steady state diffusion:

d 2n
n
n
=

Dn n L2n
dx 2

Diffusion length:

L D

ni ( Si ) = 1.5 10 cm
10

q = 1.6 10

19

Eg = 1.12 eV

0 = 8.854 1014 F cm
kT
= 0.0259V @ T = 300o K
q

n 1 J n n
=

q x n
t

d 2p p
= 2
dx 2
Lp
Einstein relation:

r ( Si ) = 11.8

r ( SiO2 ) = 3.9

kT
q

p-n JUNCTIONS
V0 =

Equilibrium:

p p kT

kT
kT
a
d
ln
=
ln 2 a =
ln
q
pn
q
q
ni /
d
ni2

2 (V V )
a +
d
W = s 0

q

a
d

pp

n
= n = e qVo / kT
pn n p

One-sided abrupt p + n :

xn 0 =

W
a
W

a +
d

q
dW 2
2

Vo =

pn = p( xn 0 ) pn = pn (e qV / kT 1)

p( xn ) = pn e

xn / L p

= pn (e qv / kT 1)e

xn / L p

Dp

D
I = qA
p + n n (e qV / kT 1) = I o (e qV / kT 1)
L p n Ln p

'
qV / nkT
I = I 0 (e
1)
(n = 1to 2)
I op = qAg op ( L p + Ln + W )

Ideal diode:
Non-ideal:
With light:

d 2V

= = D
2
dx
s
s
dV
q

( x) =
= A ( x + x p ) for x p x < 0
dx
s
q
x q

( x ) = max + D = D ( x + xn ) 0 < x xn

Abrupt Junction:

max =
Vbi =

q
D xn

q
A x 2p
2 s

q
A x p

q
D xn2 1
= maxW
2 s
2

dQ
dV

Capacitance:

C=

Junction Depletion:

d
a
q
C j = A

2 (V0 V )
d +
a

A
W

Stored charge

Q p = qA0 p( xn )dx n = qApn 0 e

exp. hole dist.:

I p ( x n = 0) =
Gs =

Qp

= qA

Lp

pn = qA

Dp
Lp

qAL p p n d
dI
q
=
(e qV / kT ) =
I
dV
p
dV
kT

Long p + n : i (t ) =

Q p (t )

dQ p (t )
dt

pn (e qV / kT 1)

xn / L p

dx n = qAL p p p

d 2v
d q
Linearly Graded Junction:
=
=
=
ax
2
s
dx
dx s
W

qa 2
( x) =
s

For

W
W
n
2
2

2
x

12 sVbi 3
W =

qa
2kT aW
Vbi =
ln
q
2ni

MOS-n CHANNEL
Oxide: Ci =

Depletion: C d =

MOS: C =

Ci C d
Ci + C d

Q Q
Threshold: VT = ms i d + 2 F
Ci Ci
1424
3
Flat band

2
W = s s
q
a

kT

Inversion: s (inv.) = 2F = 2 In a
q
ni

Qd = q
aWm = 2( s q
a F )

Debye screening length:

LD =

Substrate bias:

VT

ID =

At VFB : C FB =

s kT
q p0
2 s q
a
Ci

(VB )

n ZCi
L

1
2 2 s q
a
(VG VFB 2 F VD )VD
2
3
Ci

Ci + C debye
2 s
LD

(n channel)

(V + 2 ) 2 3 (2 ) 2 3
F
F
D

n ZCi

1 2
(VG VT )VD 2 VD

1
Z
Z
Saturation: I D ( sat.) nCi (VG VT ) 2 =
nCiVD2 ( sat.)
2
L
2L
I
I ( sat.) Z
g m = D ; g m ( sat.) = D
n Ci (VG VT )
VG
VG
L
ID

For short L:

I D ZCi (VG VT )vs

Subthreshold slope:

S=

Ci C debye

Cdebye =

C + Cit
dVG
kT
=
In101 + d

d (log I D )
q
Ci

JFET
2

Vp =

qa
D
2 s

3
3
V
VG 2 2 VD VG 2
2
D
I D = G0V p +

3 VP
VP 3 VP

2aZ
G0 =
L
3
V
VG 2 2
2
D
I D = ( Sat ) = G0V p + = G0VP
3
VP 3 VP

VG 2
I D ( sat )

g m ( sat ) =
= Go 1
V
VG
p

V
I D ( sat ) I DSS 1 + G
VP

BJT-p-n-p
I Ep = qA

I Ep
I Cp
I En
I Cn

Dp
p E ctnh Wb pc csc h Wb
L p
Lp
Lp

qAD p Pn
W
qAD p Pn

e
e

qVEB

qVEB

pE = pn (e qVEB / kT 1)
pc = pn (e qVCB / kT 1)

kT

kT

W
qAD p nE qVEB kT

1
e
LE

qADc nc
=
LC

D pn
W D n qVEB

I E = I En + I Ep = qA n pn ctnh nb pn n p e kT 1

Lp Ln

Lp

Dp
W
W
I C = qA
pE csc h b pC ctnh b
Lp
Lp
Lp
I B = qA

Dp
W
(pE + pc ) tanh b
L p
2 L p

B=

W2
csc hWb / L p
IC
W
=
= sec h b 1 b2
2L p
I Ep ctnhWb / L p
Lp

(Base transport factor)

1

Lnp nn np
W n p
W
= 1 + p
tanh nb 1 + pb n nn
n
I En + I Ep Ln p p p
L p
Ln p p p
(Emitter injection efficiency)

I Ep

iC
B

=
=

i B 1 B 1

iC
= B
iE
(Common base gain)

(Common emitter gain)

pE
pn
p
QI = I EI tI = qI C
pn
Q
= I C
t
= q

1
1 QI dQ

iE = Q

+
+

dt
t
p
tI
1
Q
1 dQI
iC =
QI +
+

tI pI dt
Q
Q dQ
dQ
iB =
+ I +
+ I
p
pI
dt
dt

t
+ p

pI
I = R =
tI + pI

= F =

1
1
I ES = q

+

t
p

1
1
I CS = qI +

tI pI
qv
Qn ( t ) = I B p 1 + eb
kT

p
iC
= =
iB
t
(For = 1 )

ib

ic

vbe

vce

g m vbe

Simplified low frequency hybrid equivalent circuit

g m = g 21 =

r0 =

r =

r =

I C
qI
= C
VEB VEC kT

1
g 22 + g12
I 1

1
1
1
=
=
= C
= DC
qI
g11
I B gm
gm
I B
B
kT
VEB VEC

1
g12

High frequency equivalent circuit including the positive resistance

Ccb
ib
B

ic

C
rc

rb
Ceb

vbe

B'
r

r0
E

g m vbe
vce

re
E

Circuit diagram of pnp BJT transistor of Ebers-Moll model

IR

IF
IE

IC
C

E
IB

R IR

F IF

qVEB

I F = I ES e kT 1

qVCB

I R = I CS e kT 1

IE = IF R IR
IC = F I F I R
I B = I E I C = (1 F ) I F + (1 R ) I R

qVCB

qVEB

I B = (1 F ) I ES e kT 1 + (1 R ) I CS e kT 1

qVCB

qVEB

I E = I ES e kT 1 R I CS e kT 1

qVCB

qVEB

I C = F I ES e kT 1 I CS e kT 1

For Wb >> LB Then I ES and I CS are simply of diode

D
I ES = qA E nE 0 + B pB 0
LB
LE

D
I CS = qA C nC 0 + B pB 0
LB
LC

In general

I ES

D
1
1
( e qVEB / kT 1) qA B PB 0
= qA E pB 0

W
L
W
LE
sinh
B
sinh B

LB
LB

e qVCB / kT 1
(
)

D
D
W
W
D
D
I CS = qA C nC 0 + B pB 0 coth B ( e qVEB / kT 1) qA C nC 0 + B pB 0 coth B ( e qVEB / kT 1)
LB
LB
LB
LB
LC
LC

F I ES = R I CS = qA

W
DB
pB 0 csc B
LB
LB

F = DC
For WB >> LB

F = DC =

1
D n W
1 W
1 + E E0 B + B
DB PBO LE 2 LB

in general

DB
W
pB 0 csch B
LB
LB

qA

F =

F =

D
W
D
qA E nE 0 + B pB 0 coth B
LB
LB
LB

W
cosh B
LB

1
DE LB nE 0
WB
+

sinh
LB LE PB 0
LB

pB ( x = 0 ) pB 0
pB 0

pB ( x = WB ) pB 0
pB 0

pB ( 0 )
pB 0

=e

pB (WB )
pB 0

qVEB
kT

=e

qVCB
kT

For active mode common base VEB > 0 , VCB < 0

qVCB

qVEB

I E = I ES e kT 1 R I CS e kT 1

 qVEB

I E = I ES e kT 1 + R I CS

qVEB

I C = F I ES e kT 1 + I CS

qVkTEB
I R I CS
1 = E
e
I ES

I C = F I E + (1 F R ) I CS
I C = DC I E + I CB 0
where

I CBO = (1 R F ) I CS

Metal-Semiconductor Contact

S = Semiconductor work function = + ( Ec E f

= electron affinity ( E0 Ec )

Flatband

surface

B = Surface potential energy barrier = m

Vbi =

1
B ( EC E f
q

FB

n-type Si

p-type Si

M > S

Rectifying

Ohmic

M < S

Ohmic

Rectifying

q
D
d

dx r 0 r s

E ( x ) = Electric field = =

q
D

r0

(W x )

q
D
dV
= E =
(W x ) 0 x W
dx
ro
V ( x) =

q
D
2
(W x )
2 r 0
1

2
2
W = r 0 (Vbi VA )
q
D

0 x W

0 x W

C=
C=

r 0 A
W

r0 A
1

2 r 0
2
(Vbi VA )

q
D

JFET
3
3

VD + Vbi VG 2 Vbi VG 2
2qZ n
D a
2

ID =
VD (Vbi V p )


L
3
Vbi VP Vbi VP

for 0 VD VD ( Sat ) V p VG 0
3
3

VD ( Sat ) + Vbi VG 2 Vbi VG 2

2qZ n
D a
2

I D ( Sat ) =
VD ( Sat ) (Vbi V p )


3
L
Vbi VP
Vbi VP

VD ( Sat ) = VG VP
3

Vbi VG 2
2qZ n
D a
2

I D ( Sat ) =
VG V p (Vbi V p ) 1

L
3
Vbi VP

I D ( Sat )

V
I D ( Sat ) = I DSS 1 G where I DSS = I D ( sat )
VP
AC response
I
Below pinch-off (VD << VD ( sat )) g d = D
VD

VG =0

VG =cons tan t

I DSSS

VD + Vbi VG 2

= G0 1

Vbi VP

Above pinch-off (VD > VD ( sat ))

I
gm = D
VD

VD =cons tan t

1
1

2
2

V
+
V

V
V

D
bi
G
bi
G

= G0

Vbi VP Vbi VP

MOS
1
( x ) = Ei ( bulk ) Ei ( x )
q
s =

1
Ei ( bulk ) Ei ( surface )
q

f =

1
Ei ( bulk ) E f
q

f =

KT
A
ln
p-type semiconductor
q
ni

f =

KT
D
ln
n-type semiconductor
q
ni

F = 2 f at the depletion-inversion transition point

= q ( n +
D
A ) q
A

(0 x W )

q
D
d

dx r 0 r s

(0 x W )

( x) =

d q
D
=
(W x )
dx r s

(0 x W )

q
D
(W x )
2 r 0

(0 x W )

( x) =

V
2qZ n
D a
= I DSS 1 G G0 =
L
V

S =

q
D 2
W
2 r 0
1

2
2
W = r 0 S
q
D

2
2
WT = Wmax r 0 ( 2 f )
q
D

VG = Si = Ox
Si = ( x = 0 ) = S
d ox
=0
d
d ox
ox =
= constant
dx
ox =

x0

ox dx = x0 ox

( Dsemi Dox )
0 s

D0 x = Dsemi

int erface

x=0

( si )
ox = r
s
r ( ox )
VG = s

s =

Csi =

ox =

r ( si )
x0 s
r ( ox )

r ( si )
x0 s
r ( ox )

2q
D

r0

VG = s +
Cox =

= Q0 s

r ( si )
2q
D
x
S
r ( ox )
r0

s 2 f

r ( ox ) o AG

xox = oxide thickness

xox

r ( si ) o AG
W

C deplition =

Cox Csi
=
Cox + Csi

Cox

( ox ) W
1+ r
r ( si ) x0