ene, (2. Zhay- er a : Goerion [Mar Sooo Marks CARLETON UNIVERSITY zee 2 | 2 FINAL EXAMINATION gsseed tad August 21, 2012 4 | 2s Duration: 3 hours Department name and course number: Electronics ELEC-2507 = = Course Instructor(s): Q-J Zhang Number of students: 64 otal oe “AUTHORIZED MEMORANDA: NON-PROGRAMMABLE CALCULATOR Students MUST count the number of pages in this examination paper before beginning to write, and report any discrepancies immediately to a proctor. This question paper has 18 pages. ‘This examination question paper MAY NOT be taken from the examination room, This exam consists of 5 questions, which should be answered on this exam paper in the space provided. Attempt all questions. Marks allocated to each question are indicated (total marks = 95). Note: The solution must be clearly indicated. Multiple solutions or solutions that are not clearly identified, will be marked incorrect. Using approximate relations (unless they are given below or specified in a question) is not accepted. Clearly state all assumptions made, Clearly mark the units for all final answers. Clearly is for any graphs. SHOW YOUR WORK! Diode: MOSFET: Forward current: Ip = Is (exp(Vo/Vx) — 1) Eon = 3.45 X10" Fim, gm =2 [p/ Vor; ‘Small signal resistance: ry= Vi/Ip Ww VBs aT Ips = =| (Ves -%:)¥ os “3° | Vp == 25m at room temperature L 2 Bipolar Transistor Active mode operation: Vpp= 0.7VName: ‘Student Section: a Qi: Answer the following by filling in the corresponding circles with your selection a, b, ¢ or d (10 marks) i) What is the gain, V/V,,, for the circuit in Fig, 1.i, assuming the operational amplifier is ideal? © @)3 (b) -3 (4 @-4 ‘ Vou i. Fig. Li ii) For a center-tapped full wave rectifier using ideal diodes, the peak-to-peak input voltage is #12V. Which ® cone of the following diodes you will be the optimum picks for your circuit taking into consideration of proper circuit functioning ?. (a) diodes with PIV (peak inverse voltage) of 6V. (b) diodes with a PIV of 12V. (©) diodes with a PIV of 18V. (@) diodes with a PIV of 24V. iii) Using a piecewise-linear model for the diode in the circuit in Fig. 1.iii,, what is the voltage Vp in © that circuit (given the linear-piecewise diode data of Vio = 0.65V and rp=200)? (@) Lav (IV (c) 0.65V (@ 04av +5 + 2200 + 1 Yo Fig. Litt2 Name: Student #__ Section;___ 3 & iv) In the circuit in Fig. iv, each diode has a forward constant voltage drop of 0.7V. What is the value of Vw if Va is -4V? (@ -4v @) (b) 0.7V (©) -2.1V, @21V Vout Fig Liv ¥) Given the characteristic curves for a MOSFET in Fig. I.v, what are the regions I and IT known as? (@) I-triode, If saturation (b) I cut-off, If - saturation, (©) 1 saturation, II - active. (@) I triode, If active Fig. Ly vi) What is the correct small signal model equivalent circuit for a MOSFET with channel length modulation?Name:_ Student #_ Seetion:_ 4 vii) Which of the following statements is incorrect for an ideal operational amplifier? (a) Ithas an infinite open loop gain. (b) Ithas an infinite common-mode rejection. (©) Ithas a zero input impedance. @ Ithas a zero output impedance. vii) Which of the following statements is incorrect about a well designed common emitter amplifier? (a) The transistor should be biased in the active mode. (b) The input can be coupled through a coupling capacitor. © (©) The input resistance should be very small. @ The gain depends upon the resistance in the collector branch of the circuit, ix) What is V. for the DC circuit shown in Fig. ix, given the transistor has 2 of 100 and assuming Vow is 0.7V. (@) 8v () 7.8V (©) 48v @av +12V +4 42k Vo 3.3K Fig. Lix ») The bipolar junction transistor can be placed in the cut-off mode of operation when the (@) emitter-base junction is forward biased and the collector-base junction is reverse biased, (b) emitter-base junction is forward biased and the collector-base junction is forward biased, (6) emitter-base junction is reverse biased and the collector-base junction is forward biased, A) emitter-base junction is reverse biased and the collector-base junction is reverse biasedCz Name: Smdent# Seton: Q2. Operational Amplifier a) For the cireuit below, write an Time-Domain expression of the output voltage v,(t) in terms of the 3 input voltages vi(), v2(t), and vs(t). Assume that the op-amp is ideal. (5 marks) 20KQ 30KQ v1 15KQ 10KaQ 7 Answer ») Modify the circuit in a) by changing at most two components such that the response will become Yo = 40v; + 20v2 ~ 203 Re-draw the circuit clearly labeling the values of all components (4 marks)- Neme:____ Student ______ Section: _ . Y Fok Se : 1E KO i (Remarks The solution is not unijue.) ©) Consider the op-amp circuit below. Assume that all the op-amps are ideal, Write the expression for the response v (using phasor notations) in terms of v, and v3. (2 marks) 8 uF ” o—_ 40KQ 5KQ 7 ———O v, Ups 4ok2 GAP jo V, ae = Ve answer; 0.32 fa BVName: Student #t__ Section: 7 4) Consider the circuit below, where the op-amp is ideal. Gq Ro i) Derive the gain H(j@) = ‘vo(iw)/v;G@). Show the steps (6 marks) 1 Rz / jet. i Rill Fae, : jug Rtjaqy ky H= N it) Suppose Ri = 500 O, Ra = 10KQ, Ry = 45KQ, and Cy = 20uF, and C= 100pF. Sketch the magnitude of the gain (in DB) with respect to angular frequency (3 marks) 2g Weel th Hose = OKRX JwSooQ: 2ouF +1 Soo JW 10K R- foot] = ~ Ja + | ¢ [A] ae) wo (Keb /oe )‘Name: ‘Student #: Section: 8 ay Z Q3: Diodes ) Consider the circuit below. Suppose the model for each of the diodes is a piece-wise linear ‘model with Vg=0.6V and tp = 500. For the given inputs, find the output voltage V, and the current I Ave 0,324 X135.56 43.923 (3 marks) [ose] (1 mark)Name: Student Section: QS: MOSFET a) In the figure below, the transistor has V;=1V, f,'=200 wA/V?,L = 1 pm, and W=5 um, +15V +15V bo R-2MQ Re-2KQ ve Ys R=3MQ Res KQ. i) Find the bias voltages Vo, Vs and current Ip (3 marks) of) Me L Vee sBeeid = 7 karha Eo MAA f rs I, = bs Ver = $ ky Ve-Ve-Ve) = 5 (8-Vs) J, ea b(g-Vye FVs,, 2ve—33Vs + Pao Vg = SE AGGREE2 Po ion bes 2x2 oa - 234 2,566 mA te oe L at 1,2 #Vs= An esee ma evQi: Name Student} Seti 16 ii) Verify the mode of operation of the transistor and state what mode the transistor is in (3 marks) se Ve-Vse P-b23 2277 2 Ve 2 _ — 6.23 Vpg = IS — 2ER «LES ma 3 = 5.654 Voy = Ves ~ Ve = 277-1 = 177 V, = Vv, Vv Mode: [woen_Sateraften vs ° b) Consider the amplifier in the figure below. Assume that for all the MOSFETs, ¥;=1V, f’= 200 wA/V?. The channel length of the MOSFETs are Lj =12=1L3=1 pm. The channel width are W, = 10 pm, W2= 10 pm, and Ws is unknown. Pope i5v i). Assume that the current mirror by Qo and Qs will provide a constant current of 2mA to bias the transistor Q;. Determine channel width Ws, (3 marks)‘Name: Student section: a 1 W, /L2 L/w ee pail tt pPcma VG sentiaibrVes Pz, Ro 13 a Tes = te YA | (Vas) 2 ave Mt > (Vis -! (3 Vg, ~2$Veg —2 20 I ete ev Vass easyer ee -0.076 =X Vag 2V Ipi= [mA We fez | 10 ip Lc a ab W720 Tos M/s, 78 7 ii). Compute the small-signal parameter gm of transistor Qy, assuming the drain current for QL is biased at 2mA, (2 marks) 2 To dn "Voy Ipe= 2mA, Tor =gka ae Vow = Vou, Vov2] Ear ho aly ZKz 4, fn = 272 = 2k [oe 2B OW iii). Assume that the current mirror by Qo and Qs makes an ideal current source. Assume all the capacitors are infinitely large. Suppose the channel length modulation for Quis to be considered, Draw the small-signal equivalent circuit. (2 marks)Q3z Student #: Section: Rs nt R Rs vs Alles & fw ae iv). Compute a value for the voltage gain Gy =vo/v, assuming that Va= 100V for Qu (5 ao @ 2 2 = Sok. To = Tp = “ama © Us - fn Ue (Wolly wR, } yee Rilke SF RHR, TR Aur Gy= Le> ~ Salollholl) zy, ona 2-2 nt§e 2.5864 erreurs [a, =-7.314 y). Compute the value of the amplifier output resistance Roy. (2 marks) = 7 3It Rout = Ro Il%o = ZkQ | $0KSe. na 2 OR KD Bxbo B4$o END = 2.83 Ks