Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials.MOS FIELD EFFECT POWER TRANSISTOR 2SK2234 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS 1.Gate 2 Drain 3 Source Drag) I at () Fp Bboy code Gate protection lode Source (8) ‘ent so0s08 sea 5 orsouh fsa cessor) |2sz0r reer “| hate DESCRIPTION ‘The 2SK2234 is N-channel Power MOS FieldEffect Transistor designed for high voltage switching applications. FEATURES © Low On-state Resistance Rosien) = 0.6 2 MAX. (Vos = 10 V, lo = 4.0 A} © Low Cie Cis = 1.500 pF TYP. © Built-in G-S Gate Protection Diodes ‘© High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to “Quality grade on NEC Semiconductor Devices” (Document number IEI-1208) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature 85 to+150 °C Channel Temperature 150°C MAX. Maximum Power Dissipation Total Power Dissipation (Te= 25°C) 40 w Total Power Dissipation (Ts= 25°C) 2.0 w Maximum Voltages and Currents (Ts = 25 °C) Voss Drain to Source Voltage 500 v Voss Gate to Source Voltage 430 v Tove Drain Current (DC) 38.0 A lojoze!* Drain Current (pulse) 432 A Maximum Avalanche Capability Ratings** ss Single Avalanche Current 12 A Eas Single Avalanche Energy 362 ms + PW 510 us, Duty Cycle 5 1% ‘++ Starting Tas = 25 °C, Ra = 25 0, Vos = 20V-»0 Document No. TC-2097 {OD Ne, Te-7956) ‘Dat Pubiehod iy 1059 M Prnteain Japan © NEC Coporaton 1993,2SK2234 ELECTRICAL CHARACTERISTICS (To = 25 °C) Forward Transfer Admittance lye 3.0 S| Vos=10V, l= 4A Fall 2 ng | =3750 Reverse Recovery Charge Qe Es uc | dildt = 50 Alps Test Circuit 1: Avalanche Capability Test Circuit 2: Switching Time lee | e ae o 90 % Vos Lenen| oxostf| Plow. 4 ie alt Staring Ta Test Circuit 3: Gate Charge bur, le=2ma Pa Bury Bie 5 1% A{dT - Percentage of Rated Current -% lo Drain Current =A, 2SK2234 TYPICAL CHARACTERISTICS (Ts = 25 °C) DERATING FACTOR OF FORWARD BIAS ‘TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA EXSEHEMPeRATORE 70 100 a g A Bs 2 40 sy a pm 40 3 2 20 fe 2 020 a0 608100 120 140 T60 02006080 100120140 Teo Te~ Case Temperature °C Te~Case Temperature °C DRAIN CURRENT vs. FORWARD BIAS SAFE OPERATING AREA BRAIN TO SOURCE VOLTAGE 2% ene Pulsed y at 20 pa ! t a 10 be bw s YOR no Se 6 u 7 Ver =6V ‘ 25: Single Puls a 10 100 1000 Ore cree ee Oo sees = Drain Curent - A, \Vos- Drain to Source Voltage ~ V ‘TRANSFER CHARACTERISTICS jor= 10V) Ye Pris 5 10 Vas — Gate 0 Source Votage -V 18 \Vos~ Drain to Source Voltage - VNEC 2SK2234 ‘TRANSIENT THERMAL RESISTANCE vs, PULSE WIDTH 4° g 24 5 Eon = oot = jc = 25°C qT ighonel 9 Case a ingle Pulse ONG 100 1m 10m 100m 1 10 100" 7000 PW Puse Wiath~s FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT GATE TO SOURCE VOLTAGE . 12 8 g 10 5 é 5 3 08] : i g 6 2 o (o 3 g 3 on 5 Soe 2 I a g g é 5 g 6 8 & 2 S & a 1 on] ee b= ian cuet A Ver= Get Souoe Vos -V BAN To souRce ow state GAT To souncs curorr VOLTAGE vs REARS ot RAN Een SARA SRMAURE 7 Wasp" 340 Bray 14 Si Bas 2 E a0 10 8 a5 oa 8 29 08 - 3 15) os § 19 3 02 i os A | Joo Tee 3 Saas 9 ee 7500 TE 0 b-Dian Cunt =A {a= Che Tempers-a oe ~ Drain to Source On-State Resistance Cu, Con, Ce ~ Capacitance — pF \Vos~ Drain to Source Voltage -V DRAIN TO SOURCE ON-STATE RESISTANCE vs, CHANNEL TEMPERATURE 14) b=88 Yes= 0) 12 Pulsed 109) os 08 oa [4 02 ee a) Te-Channe! Temperature ~ °C 75 100 125 750 CAPACITANCE ve. DRAIN TO SOURCE VOLTAGE 2s f= 1M ves = 0 10 10 Son Gm "Fy 10 100 ‘100 \Vor~ Drain to Source Voltage - V DYNAMIC INPUT CHARACTERISTICS. 18 16 1“ 2 10 8 100 le 4 60 2 010 2% 30 40 80 60 70 80 OO 0. Gate Charge ~ nc Ve ~ Gate to Source Voltage - V 2SK2234 ‘SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 leo = Diode Forward Current -A Pulsea 04 002 04 06 08 10 12 14 16 Vso ~ Source to Drain Votage -V ‘SWITCHING CHARACTERISTICS 10 Wenn ieov fe= 10a Vera = 10 Switching Time ns oa 1 10 100 lo~ Drain Current A, REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT a g 8 te ~ Reverse Recovery Time —ns Fe 1 10 100 Ir ~ Diode Forward Current A,NEC 2SK2234 SINGLE AVALANCE CURRENT vs. SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD STARTING CHANNEL TEMPERATURE 409 2 360 £ azo 5 2 280) 3 240 4 § 160 3 8 129) 8 & 2 3° 01 °. \oon 10m 100 m B75 1012585 = Indetive lad =H Starting Ta Starting Channel Temperature °C Reference ‘Application note name No. Safe operating area of Power MOS FET. TEA1036 ‘aplication iouit using Power MOS FET. TEA-1035 ‘Quality contol of NEC semiconductors devices. TeLt202 ‘ualty contol guide of semiconductors davies, MEL-1202 ‘Assembly manual of semiconductors devices. vEL1207NEC 2SK2234 [MEMO]NEC 2SK2234 MEMO] ‘No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. ‘The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications Or they intend to use “Standard quality grade NEC devices for applications not intended by NEC, please contact ‘our sales people in advance. Application examples recommended by NEC Corporation, Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, industrial robots, Audio and Visual equipment, Other consumer products, etc. ‘Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. Ma 928