MPS 6561 THE MPS6560, MPS6561 (NPN) AND MPS6562, MPS65S63 (PNP) ARE SILICON PLANAR EPITAXIAL TRANSISTORS DESIGNED FOR COMPLEMENTARY SYMMETRY AUDIO CUTPUT APPLICATIONS. THEY FEATURE LOW COLLECTOR TO EMITTER SATURATION VOLTAGE (0.237 TYPICAL @ To=500ms) ABSOLUTE MAX] RATINGS — £2: poo deuces voltage anc zurent waves are negacve. Collector-Base Voltage YoBo Collector-Bnitter Voltage Youo Bnitter-Base Voltage Yep0 Collector Current Ic Total Power Dissipation (Te <25°C) Prot (Ta S25°C) Operating Junction & Storage Temperature Tj, Tetg ELECTRICAL CHARACTERISTICS (TA=25°C COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS MPS 6563 CASE 70-924 EBC wrsesso(nn MPS6561 (NPN, ‘MPS6562(PNP) — MPS6563( PNP, 25 207 25 20" wv 0.68 1.5 625m =55 to 150°C unless otherwise noted) Rrse5sot rn yerac561 a PARAMETER simmor, fNPS6562( pNP) |1P36563(PNP)| UNTT| TEST CONDITIONS MIN MAX | MIN. MAX. Collector-Base Breakdown Voltaga BVcRO 25 20 v Ic=0.1mA Ige0 Collector Cutoff Current Iczo 100 100 | na ‘VoB=20V Tg-0 Collector Cutoff Current Iczo 100 100 | nA Vee=Vcxo = Tpe0 Bnitter Cutoff Current TBO 100 100 | nA ‘VEB=4V Ic=0 Collector-Bnitter Saturation | Vox(sat)4 0.5 Vv |+Tc=500mA Tp=50mA Voltage 0.5/0 To=350mA TB=35mA Base-Bnitter Voltage vse + 1.2 ¥ | 1o500mA VoE=1¥ 1.2/0 | ‘To=350mA Vcg-1V D.C. Current Gain ae | 35 35 | Torl0mA Vog1V 50 50 Ig=100mA VcE=1V, 50 200 Tg=500mA Vog=1V 50 200 ‘Ic=350mA Veg=1V Current Gain-Bandwidth Product | fp 60 60 MHz | Ic=10mA Vcg=10¥ Collector-Base Capacitance cob 30 30 | pF | Vop=l0v Tp-0 j_f-100kH2 » Pulse Test : Pulse Width-0.3mS, Duty Cyoleclé as SeGURE 16 RoNO, KWUN TONG, HONG KONG. TELEX Ags10 MICRO ELECTRONICS LTD. ‘wun tons °. 0, poxsacr7 chats avoRess “wicnorRon™ FAX: 3-410321TYPICAL CHARACTERISTICS (7,y=250c unless otherwise noted) ; Prot vs Ta Hpg vs Ic | T os Pulse Test ‘VogslV) { 200 tH 15 TUT Prot Hipp 2150 vs + 1.0} , tit Ww) 100 H 0.5 50 | l o o 200 1 10 100 100 Ic (ma) a Yer(sat) & VBE vs Ic fp vs _\ 1.0 250 = [Pulse Test Vea a 0.8 200 i 38 ay I il I~ @ Toph ii) 0.6 bee oe i fr 150) i vour MT (aie) i 0.4 | 100 0.2 t i Lt so} ** | yen(set) | l eet ° ult ° 10 100 1000 1 10 100 1000 Ig (ma) Ig (mA) ) VU 1,76+8300A/C .0830A/C