_KEC | SEMICONDUCTOR TIP42C KOREA ELECTRONICS CO.LTD_ TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION FEATURES rT + Complementary t TIPAIC 2 MAXIMUM RATINGS (Ta=25T) T Et [aoa CHARACTERISTIC SYMBOL | RATING [UNIT | of Catetar-Bave Vatage Yao | -10 | Vv Ty ate Calter Enter Vag [Vas [ito [ aL. 7) | HESe Emitter-Base Voltage Vimo 6 id 5 [air be le 6 . | {amie Collector Curent A tii {3s Pulse leo “10 uf a ase Current a Tai ce ore eee Collector Cre26t] 2 |W a a Power Dissipation [ere-ase)] @ |w Jimction Termperatare 1 im | TO-220AB Storage Temperature Range Tas | 85-150 | 0 ELECTRICAL CHARACTERISTICS (T. CHARACTERISTIC syMpoL | ‘Test CONDITION — | MIN. | Tye. | Max. | UNIT Collector Enter a e i fae lnae ; Stee aaa Vesosus) | Te=-80mA, Tar0 100 v Collector Cut-off Current Teo - | = | -o7 | ma Collector Cut-off Cuzent ess - [= | 00 | a Emitter Cut-otf Curent Jao eae 1 | ma eae |e DC Curent Gain Ie 5 | - | ® ColieeteEnitter ; : : ee ee See Vewins | e=-68, To=-600mA us| Vv Bace-Emitter On Voltage Vos - | - | ao] v ‘Transition Freawency fe ao | - | - | me 1998, 2.3 Revision No 0 KEC 12TIP42C Ke 300 100 30 10 3 DE CURRENT GAIN mre 1 bre — Te “001-04 “1 COLLECTOR POWER DISSIPATION F, () COLLECTOR CURRENT 1 Pc = Ta 50100 AMBIENT TEMPERATURE Ta (€) ie (A) 150 108 200 Veejsat) Van(est) ~ Le aaa icine = 16 Fae 2 ge bite E08 2] ° “oor 01-1 10100 COLLECTOR CURRENT tc (A) SAFE OPERATING AREA 2-30 8 -0 KE g {CONTINU a g : Po? Guana nN g "= SINGLE_NONREPETITIVE 8-00] DRGs Mii nexareo! 2 _,, Lattin cl tr 3-10 30-100 300 COLLECTOR EMITTER VOLTAGE Yes (V) 1998, 2. 3 Revision No 0 KEC