DHARMSINH DESAI UNIVERSITY, NADIAD Faculty of Technology BiTech, Sem: 1(ALL) Sub: Electronic Principles Date: 3/6/2011 Day: Tue sda: insuedoas 4°4 «Figures to the right indicates the maximum marks of the question = Assume suitable data whenever necessary and mention them clearly. : ‘SECTION . qu (10) [A] Choose the appropriate option: : [06] 1, ‘To operate transistor in forward active region, the ___junetion is always reverse biased while the junction is always forward biased. a) emitter, collector b) collector, emitter ¢) collector, base ) emitter, base 2, In general, __ CE configuration is preferred to be used as a switch. a) base biased ‘byemitter biased) collector fb bias, d) VDB 3, Ifthe bypass capacitor, used in conventional VDB CE amplifier, is removed then what will be the effect? a) voltage gain is reduced +b) input impedance is increased c) voltage gain is stabilized 4d) all of the above 4, ‘The high impedance source is to be used to drive a very low impedance load using transistor. In order to avoid overloading, which configuration will you prefer? . aCe b) cB cc 4) any of them will do S. An audio amplifier operates in the frequency range of _ : 2) 00 20 Hz b)20 Hzto2kHz —c) 20 Hz to 20kHz_* d) above 20 kHz. 6. For the CE amplifier driving some load resistance Ri, the slope of the DC load line is the.AC load line. 3) lesser than ’) greater than ©) equal to 4) can't say [B] Do as directed: [04] 1. If the base current'in a transistor is 20 #A when the emitter current is 6.4 mA, what are the values of ag and Bs? 2. If the input resistance of the second stage decreases, the voltage gain of the first stage too decreases. Justify the statement. 3. If ve = 10 mV (peak) and i, = 75 HA (peak to peak), find ac emitter resistance of the emitter diode. 4, Classify amplifier on the basis of class of operation.EIT Aiiswer the following: Toy ik In Darlington pair of transistor, prove that the overall current gain B = Bi*Ba, where Br ‘and Bp are the current gain of first and second stage transistor respectively. 02] 2° Draw the actual wiring diagram of base biased CE configuration circuit. Determine the value of Ie and Vor if Ry = 5 kQ, Re = 2 KO, Voc = Von = 10 V, Vag = 0.7 V and B=100- Comment on the region in which this transistor operates with proper justification. [04] 3, Draw the de and ac load line for the CE amplifier (emitter resistor bypassed) with following data available to you: Vorq= 6.2 V, log 1.5 mA, Re= 4.7 kQ, Re= 1 kQ and Ri = 10 kQ. Also determine the ac output compliance. [04] OR Q-II] Answer the following: {10} 1, Compare CC and CB amplifiers. (021 2. Draw the de and ac load line for the CC amplifier with following data available to you: Vceq = 48 V, Ico = § mA, Re = 390 2 and Ri ~ 1 kQ2. Also determine the ac outpiy compliance. [04] 3, Draw the actual wiring diagram of collector feedback bias CE configuration circuit. Determine the value of Ic and Vce if Re = 200 k@, Re = 20 kQ, Voc = 20 V, Vane = 0.7 V and B=100. Comment on the region in which this transistor operates with proper * justification. [04] Q-IiI] Answer the following: . [10} 1. Draw the actual wiring diagram as well as the ac model of VDB swamped amplifier and derive the expression of voltage gain Av & input impedance Zin. {05} 2, For the circuit shown in Fig: 1, determine the ac input power, ac output power and hence power gain of the amplifier (use Vag = 0.7 V and B=50). {05} OR Q-III] Answer the following: [10] 1. Draw the actual wiring diagram as well as the ac model of voltage divider biased CB amplifier and derive the expression of voltage gain Av & input impedance Zin. [05] 2, For the cireuit shown in Fig: 1, determine the de input power, ac output power and hence efficiency of the amplifier (use Vee = 0.7 V and B=50). 05] froSECTION-IL Q-IV] Do as directed: fo} 1. Convert Binary code 1011 into Gray number, fol] 2. (ABO) = (__)s [ol] 3. State True or False with brief reason, “The unpredictable signals always carries information”. (01) 4. What is the difference between frequency response and frequency spectrum? [ot] 54 A modulated signal is given by Vo= (Ve#Vim (0)) sin (10'°nt), Find out the size of the /2 antenna required. fol] 6. A certain transistor is to be operated with Vce = 6 V, if its maximum power rating is 250 mw, what is the most collector current that it can handle? 01] 7. In amplitude modulation, modulating signal is human voice signal with 300 Hz to 3400 Hz frequeney component and carrier signal has 120 MHz frequency. Draw the AM frequency spectrum, [02] 8. Prove that o=f/(1+B), where o=Ic/Ie and B=lo/Ip. [02] Q-V] Answer the following: [10] 1. Discuss the steps for subtracting number N from M using r’s complement method. [04] 2. Write the truth-table of full adder and design the same using basic gates. [04] 3. An AM signal drives an envelope detector with R=10 KQ and C=1000 pF. If the percent modulation is 30%, what is the highest modulating frequency detectable without attenuation? 02} . OR QV] Answer the following: [10} 1.” Design a 3-bit even parity generator circuit. . [04] 2. A) Simplify using Boolean algebra: Z= (X + Y) (X+Y") (XZ’Y’ [03] B) State DeMorgan’s law. [ol] 3. A modulated signal is given by v(t)=sin(ct)+1/8cos( 0 -@m)t-1/8 cos(o.t@m)t. Find out modulation index. (02) Q-VI] Answer the following: {10] 1. Plot the frequency spectrum of input signal v(t) =10sin100t+20cos (200ttn/3) + 6sin (200+ n/4) + Ssin (100t+ 1/6). [03] 2. Design a base biased LED driver circuit with following specifications: Voc = Vas = 15V, Viep = 2V and ILep = 13 mA. [03] 3. Draw the general block diagram of Oscillator and state Barkhausen Criterion for building up and sustaining the oscillations. [04]oR Q-VI] Answer the followin (10) 1. tn super heterodyne receiver, RF signal frequesey js 400 MHz and requirement of output FC of super heterodyne receiver with all specifications. {03} 9, Design a n emitter biased LED driver cireuit with following specifications: Voc = 20V. Vap = 15V, Vee. 0.7 V. Viev=2V and ILep = 10 mA. (03) 4, Draw the actual diagram of transistorized RC phase Shift oscillator. Determine the value of resonant frequency and the minimum value of B of CE amplifier, if Rc = 5 kQ, R= 1kQ and C = IHF. 04] voosov Fig: 1