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Digital Integrated

Circuits
Jan M. Rabaey

AAnantha
Design
Perspective
Chandrakasan
Borivoje Nikolic

Introduction
July 30, 2002
EE141 Integrated Circuits2nd
Digital

1
Introduction

What is this book all about?

Introduction to digital integrated circuits.


CMOS devices and manufacturing technology.
CMOS inverters and gates. Propagation delay,
noise margins, and power dissipation. Sequential
circuits. Arithmetic, interconnect, and memories.
Programmable logic arrays. Design
methodologies.

What will you learn?


Understanding, designing, and optimizing digital
circuits with respect to different quality metrics:
cost, speed, power dissipation, and reliability

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Introduction

Digital Integrated Circuits


Introduction: Issues in digital design
The CMOS inverter
Combinational logic structures
Sequential logic gates
Design methodologies
Interconnect: R, L and C
Timing
Arithmetic building blocks
Memories and array structures

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Introduction

Introduction
Why

is designing
digital ICs different
today than it was
before?
Will it change in
future?

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Introduction

The First Computer

The Babbage
Difference Engine
(1832)
25,000 parts
cost: 17,470
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Introduction

ENIAC - The first electronic computer (1946)

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Introduction

The Transistor Revolution

First transistor
Bell Labs, 1948

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Introduction

The First Integrated Circuits


Bipolar logic
1960s

ECL 3-input Gate


Motorola 1966

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Introduction

Intel 4004 Micro-Processor


1971
1000 transistors
1 MHz operation

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Introduction

Intel Pentium (IV) microprocessor

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Introduction

Moores Law
In

1965, Gordon Moore noted that the


number of transistors on a chip doubled
every 18 to 24 months.
He made a prediction that
semiconductor technology will double its
effectiveness every 18 months

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Introduction

LOG2 OF THE NUMBER OF


COMPONENTS PER INTEGRATED FUNCTION

16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0

EE141 Integrated Circuits2nd


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1975

1974

1973

1972

1971

1970

1969

1968

1967

1966

1965

1964

1963

1962

1961

1960

1959

Moores Law

Electronics, April 19, 1965.

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Introduction

Evolution in Complexity

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Introduction

Transistor Counts
1 Billion
Transistors

K
1,000,000
100,000
10,000
1,000
i386
80286

100
10

i486

Pentium III
Pentium II
Pentium Pro
Pentium

8086
Source: Intel

1
1975 1980 1985 1990 1995 2000 2005 2010
Projected
EE141 Integrated Circuits2nd
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Courtesy, Intel

14
Introduction

Moores law in Microprocessors

Transistors (MT)

1000

2X growth in 1.96 years!

100
10

486

P6
Pentium proc

386
286

0.1
8086

8085
Transistors
on Lead Microprocessors double every 2 years
0.01
8080
8008
4004

0.001
1970

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1980

1990
Year

Courtesy, Intel

2000

2010

15
Introduction

Die Size Growth


Die size (mm)

100

10
8080
8008
4004

8086
8085

286

386

P6
Pentium
proc
486

~7% growth per year


~2X growth in 10 years

1
1970

1980

1990
Year

2000

2010

Die size grows by 14% to satisfy Moores Law


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Courtesy, Intel

16
Introduction

Frequency
Frequency (Mhz)

10000

Doubles every
2 years

1000
100
10

8085

1
0.1
1970

8086 286

386

486

P6
Pentium proc

8080
8008
4004
1980

1990
Year

2000

2010

Lead Microprocessors frequency doubles every 2 years

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Courtesy, Intel

17
Introduction

Power Dissipation
Power (Watts)

100
P6
Pentium proc
10
8086 286
1

8008
4004

486
386

8085
8080

0.1
1971

1974

1978

1985

1992

2000

Year

Lead Microprocessors power continues to increase


EE141 Integrated Circuits2nd
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Courtesy, Intel

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Introduction

Power will be a major problem


100000

18KW
5KW
1.5KW
500W

Power (Watts)

10000
1000

Pentium proc

100

286 486
8086
10
386
8085
8080
8008
1 4004
0.1
1971 1974 1978 1985 1992 2000 2004 2008
Year

Power delivery and dissipation will be prohibitive

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Courtesy, Intel

19
Introduction

Power density
Power Density (W/cm2)

10000
1000
100

Rocket
Nozzle
Nuclear
Reactor

8086
10 4004
Hot Plate
P6
8008 8085
Pentium proc
386
286
486
8080
1
1970
1980
1990
2000
2010
Year

Power density too high to keep junctions at low temp


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Courtesy, Intel

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Introduction

Not Only Microprocessors


Cell
Phone
Small
Signal RF

Digital Cellular Market


(Phones Shipped)

Power
RF

Power
Management

1996 1997 1998 1999 2000


Units

48M 86M 162M 260M 435M

Analog
Baseband
Digital Baseband
(DSP + MCU)

(data from Texas Instruments)


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Introduction

Challenges in Digital Design


DSM

1/DSM
Macroscopic Issues

Microscopic Problems

Time-to-Market
Millions of Gates
High-Level Abstractions
Reuse & IP: Portability
Predictability
etc.

Ultra-high speed design


Interconnect
Noise, Crosstalk
Reliability, Manufacturability
Power Dissipation
Clock distribution.
Everything Looks a Little Different

?
EE141 Integrated Circuits2nd
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and Theres a Lot of Them!

22
Introduction

10,000
10,000,000

100,000
100,000,000

Logic Tr./Chip
Tr./Staff Month.

Complexity

1,000
1,000,000

10,000
10,000,000

100
100,000

Productivity
(K) Trans./Staff - Mo.

Logic Transistor per Chip (M)

Productivity Trends
1,000
1,000,000
58%/Yr. compounded
Complexity growth rate

10
10,000

100
100,000

1,0001

10
10,000
x

0.1
100

xx

0.01
10

xx
x

1
1,000

21%/Yr. compound
Productivity growth rate

0.1
100
0.01
10

2009

2007

2005

2003

2001

1999

1997

1995

1993

1991

1989

1987

1985

1983

1981

0.001
1

Source: Sematech

Complexity outpaces design productivity


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Courtesy, ITRS Roadmap

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Introduction

Why Scaling?
Technology shrinks by 0.7/generation
With every generation can integrate 2x more
functions per chip; chip cost does not increase
significantly
Cost of a function decreases by 2x
But

How to design chips with more and more functions?


Design engineering population does not double every
two years

Hence, a need for more efficient design methods


Exploit different levels of abstraction

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Introduction

Design Abstraction Levels


SYSTEM

MODULE
+
GATE

CIRCUIT

DEVICE
G
S
n+

EE141 Integrated Circuits2nd


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D
n+

25
Introduction

Design Metrics
How

to evaluate performance of a
digital circuit (gate, block, )?

Cost
Reliability
Scalability
Speed (delay, operating frequency)
Power dissipation
Energy to perform a function

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Introduction

Cost of Integrated Circuits

NRE (non-recurrent engineering) costs


design time and effort, mask generation
one-time cost factor

Recurrent costs
silicon processing, packaging, test
proportional to volume
proportional to chip area

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Introduction

NRE Cost is Increasing

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Introduction

Die Cost
Single die

Wafer

Going up to 12 (30cm
From http://www.amd.com

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Introduction

Cost per Transistor


cost:

-per-transistor

1
0.1

Fabrication capital cost per transistor (Moores law)

0.01
0.001
0.0001
0.00001
0.000001
0.0000001
1982

1985

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1988

1991

1994

1997

2000

2003

2006

2009

2012

30
Introduction

Yield
No. of good chips per wafer
Y
100%
Total number of chips per wafer
Wafer cost
Die cost
Dies per wafer Die yield

wafer diameter/2 2 wafer diameter


Dies per wafer

die area
2 die area

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Introduction

Defects

defects per unit area die area


die yield 1

is approximately 3
die cost f (die area)4
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Introduction

Some Examples (1994)


Chip

Metal Line
layers width

Wafer
cost

Def./ Area Dies/ Yield


cm2 mm2 wafer

Die
cost

386DX

0.90

$900

1.0

43

360

71%

$4

486 DX2

0.80

$1200

1.0

81

181

54%

$12

Power PC
601

0.80

$1700

1.3

121

115

28%

$53

HP PA 7100

0.80

$1300

1.0

196

66

27%

$73

DEC Alpha

0.70

$1500

1.2

234

53

19%

$149

Super Sparc

0.70

$1700

1.6

256

48

13%

$272

Pentium

0.80

$1500

1.5

296

40

9%

$417

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Introduction

Reliability
Noise in Digital Integrated Circuits
v(t)
i(t)

Inductive coupling

EE141 Integrated Circuits2nd


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Capacitive coupling

V DD

Power and ground


noise

34
Introduction

DC Operation
Voltage Transfer Characteristic
V(y)

VOH = f(VOL)
VOL = f(VOH)
VM = f(VM)

OH

V(y)=V(x)

VM Switching Threshold
V OL
V OL

OH

V(x)

Nominal Voltage Levels


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Introduction

Mapping between analog and digital signals


V
1

V
OH
V
IH

out

OH

Slope = -1

Undefined
Region
V
0

Slope = -1

IL

V
OL

OL
V

EE141 Integrated Circuits2nd


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IL

IH

in

36
Introduction

Definition of Noise Margins


"1"
V

OH

NM H

NM L
OL

Noise margin high


IH

Undefined
Region

IL

Noise margin low

"0"
Gate Output

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Gate Input

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Introduction

Noise Budget
Allocates

gross noise margin to


expected sources of noise
Sources: supply noise, cross talk,
interference, offset
Differentiate between fixed and
proportional noise sources

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Introduction

Key Reliability Properties

Absolute noise margin values are deceptive


a floating node is more easily disturbed than a
node driven by a low impedance (in terms of
voltage)

Noise immunity is the more important metric


the capability to suppress noise sources

Key metrics: Noise transfer functions, Output

impedance of the driver and input impedance of the


receiver;

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Introduction

Regenerative Property
out

out
v3

v3

f(v)

v1

finv(v)

v1
finv(v)

v2

Regenerative
EE141 Integrated Circuits2nd
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v3

f(v)

v0

Non-Regenerative
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Introduction

Regenerative Property
v0

v1

v2

v3

v4

v5

v6

A chain of inverters

V (Volt)

5
v0

v1

Simulated

21
response 0

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6
t (nsec)

v2
8

10

41
Introduction

Fan-in and Fan-out

Fan-out N
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Fan-in M
42
Introduction

The Ideal Gate


V out

Ri =
Ro = 0
Fanout =
NMH = NML = VDD/2

g=

V in

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Introduction

An Old-time Inverter
5.0
4.0

NM L

3.0
2.0

VM

1.0

0.0

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Digital

1.0

NM H

2.0
3.0
V in (V)

4.0

5.0

44
Introduction

Delay Definitions
V in

50%
t
V out

tpHL

tpLH
90%
50%
t

10%
tf
EE141 Integrated Circuits2nd
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tr

45
Introduction

Ring Oscillator
v0

v1

v0

v2

v1

v3

v4

v5

v5

T = 2 tp N
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Introduction

A First-Order RC Network
R

vin

vout
C

tp = ln (2) = 0.69 RC

Important model matches delay of inverter


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Introduction

Power Dissipation
Instantaneous power:
p(t) = v(t)i(t) = Vsupplyi(t)
Peak power:
Ppeak = Vsupplyipeak
Average power:
Vsupply t T
1 t T
Pave
p (t )dt
isupply t dt

t
T t
T
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Introduction

Energy and Energy-Delay


Power-Delay Product (PDP) =
E = Energy per operation = Pav tp
Energy-Delay Product (EDP) =
quality metric of gate = E tp

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Introduction

A First-Order RC Network
Vdd

R PMOS
A1

vAinN

E0>1=C LVdd2

NETWORK

NMOS

vout supply
CVLout

CL

NETWORK
Vdd
T
T
E = P t dt = V i
t dt = V
C dV
= C V 2
0 1
dd sup ply
dd
L out
L
dd
0
0
0
T
T
Vdd
1
2
t dt = V
t dt = C V
E
= P
i
dV
= C V
ca p
cap
out ca p
L out out
dd
2 L
0
0
0

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Introduction

Summary
Digital integrated circuits have come a long
way and still have quite some potential left for
the coming decades
Some interesting challenges ahead

Getting a clear perspective on the challenges and


potential solutions is the purpose of this book

Understanding the design metrics that govern


digital design is crucial
Cost, reliability, speed, power and energy
dissipation

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Introduction

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