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SSE (Solid-State Electroncis)
SSE (Solid-State Electroncis)
Textbook:
Semiconductor Physics and Devices
By Donald A. Neamen, 1997
Reference:
Advanced Semiconductor Fundamentals
By Robert F. Pierret 1987
Fundamentals of Solid-State Electronics
By C.-T. Sah, World Scientific, 1994
Homework: 0%
Midterm Exam: 60%
Final Exam: 40%
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Contents
Chap. 1
Chap. 2
Chap. 3
Chap. 4
Chap. 5
Chap. 6
Chap. 7
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Introduction
Classification of materials
Crystalline and impure semiconductors
Crystal lattices and periodic structure
Reciprocal lattice
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Introduction
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Classifications of Materials
According to their viscosity, materials are classified into solids, liquid,
and gas phases.
Solid
Liquid
Gas
Low
Medium
High
Atomic density
High
Medium
Low
Hardness
High
Medium
Low
Diffusivity
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Geometry
Crystallinity
Single crystalline, polycrystalline, and amorphous
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Geometry
Imperfection
A solid is imperfect when it is not crystalline (e.g., impure) or its atom are
displaced from the positions on a periodic array of points (e.g., physical defect).
Defect: (Vacancy or Interstitial)
Impurity:
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Purity
Pure v.s. Impure
Impurity:
chemical impurities:a solid contains a variety of randomly located foreign atoms,
e.g., P in n-Si.
an array of periodically located foreign atoms is known as an impure crystal with a
superlattice, e.g., GaAs
Solid-State Electronics
Chap. 1
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Electrical Conductivity
Material type
Resistivity
(-cm)
Conduction Electron
density (cm-3)
Examples
Superconductor
0 (low T)
0 (high T)
1023
Good Conductor
10-6 10-5
1022 1023
Conductor
10-5 10-2
1017 1022
semi-metal: As, B,
Graphite
Semiconductor
10-2 10-9
106 1017
Semi-insulator
1010 1014
101 105
Amorphous Si
Insulator
1014 1022
1 10
Solid-State Electronics
Chap. 1
10
Sn, Pb
Oxides
SiO2, Si3N4,
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Mechanical Classification
Based on the atomic forces (binding force) that bind the atom together,
the crystals could be divided into:
Crystal of Inert Gases (Low-T solid):
Van der Wall Force: dipole-dipole interaction
Ionic Crystals (8 ~ 10 eV bond energy):
Electrostatic force: Coulomb force, NaCl, etc.
Metal Crystals
Delocalized electrons of high concentration, (1 e/atom)
Hydrogen-bonded Crystals ( 0.1 eV bond energy)
H2O, Protein molecules, DNA, etc.
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Binding Force
Bond energy is a useful parameter to provide a qualitative gauge on
whether
The binding force of the atom is strong or weak;
The bond is easy or hard to be broken by energetic electrons, holes, ions, and
ionizing radiation such as high-energy photons and x-ray.
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
13
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Crystal Lattices
A crystal is a material whose atoms are situated periodically on
interpenetrating arrays of points known as crystal lattice or lattice
points.
The following terms are useful to describe the geometry of the
periodicity of crystal atoms:
Unit cell; Primitive Unit Cell
Basis vectors a, b, c ; Primitive Basic vectors
Translation vector of the lattice; Rn = n1a +n2b +n3c
Miller Indices
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Basis Vectors
The simplest means of representing an atomic array is by translation.
Each lattice point can be translated by basis vectors, , b , .
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Dept. of E. E. NCU
Unit Cell
Unit cell: is a small volume of the crystal that can be used to represent
the entire crystal. (not unique)
Primitive unit cell: the smallest unit cell that can be repeated to form
the lattice. (not unique) Example: FCC lattice
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Miller Indices
To denote the crystal directions and planes for the 3-d crystals.
Plane (h k l)
Equivalent planes {h k l}
Direction [h k l]
Equivalent directions <h k l>
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Miller Indices
To describe the plane by Miller Indices
Find the intercepts of the plane with x, y, and z axes.
Take the reciprocals of the intercepts
Multiply the lowest common denominator = Mliller indices
Solid-State Electronics
Chap. 1
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Dept. of E. E. NCU
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 1
20
Instructor: Pei-Wen Li
Dept. of E. E. NCU
N-fold symmetry:
6-fold symmetry
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Dept. of E. E. NCU
Solid-State Electronics
Chap. 1
22
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Surface Density
Consider a BCC structure and the (110) plane, the surface density is
found by dividing the number of lattice atoms by the surface area;
Surface density = 2 atoms
(a1 )(a1 2 )
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
(0,0,0)
=109.4o
1 1 1
( , , )
4 4 4
1 1 1
( , , )
4 4 4
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Diamond Structure
Or the diamond could be visualized by a bcc with four of the corner
atoms missing.
Solid-State Electronics
Chap. 1
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Dept. of E. E. NCU
Solid-State Electronics
Chap. 1
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 1
27
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Reciprocal Lattice
Every crystal structure has two lattices associated with it, the crystal
lattice (real space) and the reciprocal lattice (momentum space).
The relationship between the crystal lattice vector ( a , b, c ) and
reciprocal lattice vector ( A , B , C ) is
The crystal lattice vectors have the dimensions of [length] and the
vectors in the reciprocal lattice have the dimensions of [1/length],
which means in the momentum space. (k = 2/)
A diffraction pattern of a crystal is a map of the reciprocal lattice of the
crystal.
Solid-State Electronics
Chap. 1
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Dept. of E. E. NCU
Example
Consider a BCC lattice and its reciprocal lattice (FCC)
Solid-State Electronics
Chap. 1
29
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Introduction
In solids, there are about 1023 electrons and ions packed in
a volume of 1 cm3. The consequences of this highly
packing density :
Interparticle distance is very small: ~2x10-8 cm.
the instantaneous position and velocity of the particle are no longer
deterministic. Thus, the electrons motion in solids must be
analyzed by a probability theory.
Quantum mechanics Newtonian mechanics
Schrodingers equation: to describe the position probability of a
particle.
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Introduction
The force acting on the j-th particle comes from all the other 1023-1
particles.
The rate of collision between particles is very high, 1013
collisions/sec
average electron motion instead of the motion of each electron at a
given instance of time are interested. (Statistical Mechanics)
equilibrium statistical mechanics:
Fermi-Dirac quantum-distribution Boltzmann classical distribution
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Energy Quanta
Consider a light incident on a surface of a material as shown below:
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Wave-Particle Duality
de Broglie postulated the existence of matter waves. He suggested that
since waves exhibit particle-like behavior, then particles should be
expected to show wave-like properties.
de Broglie suggested that the wavelength of a particle is expressed as
= h /p, where p is the momentum of a particle
Davisson-Germer experimentally proved de Broglie postulation of
Wave Nature of Electrons.
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Davisson-Germer Experiment
Consider the experimental setup below:
Observation:
the existence of a peak in the density of scattered electrons can be
explained as a constructive interference of waves scattered by the periodic
atoms.
the angular distribution of the deflected electrons is very similar to an
interference pattern produced by light diffracted from a grating.
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Conclusion
In some cases, EM wave behaves like particles (photons) and
sometimes particles behave as if they are waves.
Wave-particle duality principle applies primarily to SMALL particles,
e.g., electrons, protons, neutrons.
For large particles, classical mechanics still apply.
Solid-State Electronics
Chap. 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Uncertainty Principle
Heisenberg states that we cannot describe with absolute accuracy the
behavior of the subatomic particles.
1. It is impossible to simultaneously describe with the absolute accuracy
the position and momentum of a particle.
p x . ( = h/2 = 1.054x10-34 J-sec)
2. It is impossible to simultaneously describe with the absolute accuracy
the energy of a particle and the instant of time the particle has this
energy.
E t
The uncertainty principle implies that these simultaneous
measurements are in error to a certain extent. However, is very small,
the uncertainty principle is only significant for small particles.
Solid-State Electronics
Chap. 2
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Dept. of E. E. NCU
+
(
)
(
,
)
=
h
x 2
t
2m
(t )
x 2
+ V ( x) ( x) (t ) = jh ( x)
11
Instructor: Pei-Wen Li
Dept. of E. E. NCU
12
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Boundary Conditions
( x) dx = 1
since |(x)|2 represents the probability density function, then for a
single particle, the probability of finding the particle somewhere is
certain.
If the total energy E and the potential V(x) are finite everywhere,
2. (x) must be finite, single-valued, and continuous.
3. (x)/x must be finite, single-valued, and continuous.
1.
Solid-State Electronics
Chap. 2
13
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Dept. of E. E. NCU
14
2mE
h2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
a
2
2
2
(
x
)
dx
=
1
sin
1
=
A
Kxdx
A
2
2
2
nx
sin(
) where n = 1,2,3...
a
a
Solid-State Electronics
Chap. 2
2ma
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Dept. of E. E. NCU
Solid-State Electronics
Chap. 2
16
Instructor: Pei-Wen Li
Dept. of E. E. NCU
In region I, V = 0,
And the general solution of this equation is
2 1 ( x) 2mE
+ 2 1 ( x) = 0
2
x
h
2mE
h2
2m
h
(Vo E ) 2 ( x) = 0
17
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Boundary Conditions:
2m(Vo E )
h2
2 ( x) = A2e K 2 x ( x 0)
=
x =0
21
x
jK1 A1 jK1 B1 = K 2 A2
x =0
Solid-State Electronics
Chap. 2
18
Instructor: Pei-Wen Li
Dept. of E. E. NCU
2 ( x) = A2e K 2 x + B2e K 2 x
where K1 =
3 ( x) = A3e jK x + B3e jK x
1
2m(Vo E )
2mE
and
K
=
2
h2
h2
19
Instructor: Pei-Wen Li
Dept. of E. E. NCU
The results implies that there is a finite probability that a particle will
penetrate the barrier, that is so called tunneling.
*
A
A
3
3
The transmission coefficient is defined by T =
A1 A1*
If E<<Vo,
E
E
T 16 1 exp( 2 K 2 a )
Vo
Vo
20
Instructor: Pei-Wen Li
Dept. of E. E. NCU
One-Electron Atom
Consider the one-electron atom potential function due to the coulomb
2
attraction between the proton and electron: V (r ) = e
4 o r
(
)
+
(sin
)
+
( E V (r )) = 0
r 2 r
r 2 sin 2 2 r 2 sin 2
h2
r
(r , , ) = R(r ) ( ) ( )
Then the solution is of the form, = ejm, where m is an integer.
Solid-State Electronics
Chap. 2
21
Instructor: Pei-Wen Li
Dept. of E. E. NCU
One-Electron Atom
Similarly, we can generate two additional constants n and l for the
variables and r. n, l, and m are known as quantum numbers (integers)
n = 1,2,3,...
1 1
=
ao
3/ 2
Solid-State Electronics
Chap. 2
22
mo e 4
En =
(4 o )2 2h 2 n 2
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 2
23
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Homework
2.1
2.15
2.23
Solid-State Electronics
Chap. 2
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Preview
Recall from the previous analysis that the energy of a bound electron is
quantized. And for the one-electron atom, the probability of finding the
electron at a particular distance from the nucleus is not localized at a
given radius.
Consider two atoms that are in close proximity to each other. The
wave functions of the two atom electrons overlap, which means that
the two electrons will interact. This interaction results in the discrete
quantized energy level splitting into two discrete energy levels.
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Kronig-Penny Model
The concept of allowed and forbidden energy levels can be developed
by considering Schrodingers equation.
Kronig-Penny Model
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Kronig-Penny Model
The Kronig-Penny model is an idealized periodic potential
representing a 1-D single crystal.
We need to solve Schrodingers equation in each region.
To obtain the solution to the Schrodingers equation, we make use of
Bloch theorem. Bloch states that all one-electron wave functions,
involving periodically varying potential energy functions, must be of
the form, (x) = u(x)ejkx, u(x) is a periodic function with period (a+b)
and k is called a constant of the motion.
The total wave function (x,t) may be written as (x,t) = u(x)ej(kx-(E/)t).
In region I (0 < x < a), V(x) = 0, then Schrodingers equation becomes
d 2u1 ( x)
du ( x)
2mE
+ 2 jk 1
(k 2 2 )u1 ( x) = 0 , 2 2
dx
dx
h
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Kronig-Penny Model
The solution in region I is of the form,
u1 ( x) = Ae j ( k ) x + Be j ( + k ) x for 0 < x < a
In region II (-b < x < 0), V(x) = Vo, and apply Schrodingers eq.
2m V
d 2u 2 ( x)
du ( x)
+ 2 jk 2
(k 2 2 )u2 ( x) = 0 , 2 2 o2 o
h
dx
dx
Boundary conditions:
u1 (0) = u 2 (0) A + B C D = 0
du1
dx
du1
dx
=
x =0
du2
dx
( k )A ( + k )B ( k )C + ( + k )D = 0
x =0
u1 (a) = u2 (b) Ae j ( k ) a + Be j ( + k ) a Ce j ( k ) b De j ( + k ) b = 0
=
x=a
du2
dx
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Kronig-Penny Model
There is a nontrivial solution if, and only if, the determinant of the
coefficients is zero. This result is
2 + 2
1 f ( E / Vo ) =
(sin a )(sin b) + (cos a )(cos b) = cos k (a + b) 1
2
The above equation relates k to the total energy E (through ) and the
potential function Vo (through ). The allowed values of E can be
determined by graphical or numerical methods.
Solid-State Electronics
Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Kronig-Penny Model
Recall -1cosk(a+b)1, so E-values which cause f() to lie in the range
-1 f() 1 are the allowed system energies.
The ranges of allowed energies are called energy bands; the excluded
energy ranges (|f()|1) are called the forbidden gaps or bandgaps .
The energy bands in a crystal can be visualized by
Energy
4
3
2
1
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Chap. 3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
E-k Diagram
Solid-State Electronics
Chap. 3
10
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k-space Diagram
Consider the special case for which Vo = 0, (free particle case)
cos(a+b) = cosk(a+b), i.e., = k,
=
2mE
h2
1
2m( mv 2 )
p
2
= =k
h
h2
Solid-State Electronics
Chap. 3
11
Instructor: Pei-Wen Li
Dept. of E. E. NCU
E-k diagram
More interesting solution occur for E < Vo ( = j), which applies to
the electron bound within the crystal. The result could be written as
2 2
(sin a )(sinh b) + (cos a )(cosh b) = cos k (a + b)
2
Consider a special case, b0, Vo , but bVo is finite, the above eq.
becomes
sin a
mV ba
P'
o
2
Solid-State Electronics
Chap. 3
12
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Dept. of E. E. NCU
E-k diagram
Consider the function of f (a) = P'
Solid-State Electronics
Chap. 3
13
sin a
+ cos a graphically,
a
Instructor: Pei-Wen Li
Dept. of E. E. NCU
E-k diagram
E-k diagram could be generated from the above figure.
This shows the concept of the allowed energy bands for the particle
propagating in the crystal.
Solid-State Electronics
Chap. 3
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Reduced k-space
Solid-State Electronics
Chap. 3
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Energy Band
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Drift Current
If an external force is applied to the electrons in the conduction band
and there are empty energy states into which the electrons can move,
electrons can gain energy and a net momentum.
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m* is called the effective mass which takes into account the particle
mass and the effect of the internal forces.
Solid-State Electronics
Chap. 3
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
=
=
= =v
2m 2m
h dk m
dk
m
m
In addition,
d 2E h2
1 d 2E 1
=
2
=
h dk 2 m
dk 2 m
19
Instructor: Pei-Wen Li
Dept. of E. E. NCU
m* >0 near the bottoms of all band; m* <0 near the tops of all bands
m* <0 means that, in response to an applied force, the electron will accelerate
in a direction opposite to that expected from purely classical consideration.
In general, carriers are populated near the top or bottom band edge in a
semiconductorthe E-k relationship is typically parabolic and, therefore,
d 2E
= constant ...E near E edge
dk 2
thus carriers with energies near the top or bottom of an energy band typically
exhibit a CONSTANT effective mass
Solid-State Electronics
Chap. 3
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Concept of Hole
Solid-State Electronics
Chap. 3
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Dept. of E. E. NCU
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Dept. of E. E. NCU
Solid-State Electronics
Chap. 3
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Energy Band
Valence Band:
In all cases the valence-band maximum occurs at the zone center, at k = 0
is actually composed of three subbands. Two are degenerate at k = 0,
while the third band maximizes at a slightly reduced energy.
The k = 0 degenerate band with the smaller curvature about k = 0 is called
heavy-hole band, and the k = 0 degenerate band with the larger
curvature is called light-hole band. The subband maximizing at a
slightly reduced energy is the split-off band.
Near k = 0 the shape and the curvature of the subbands is essentially
orientation independent.
Solid-State Electronics
Chap. 3
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Instructor: Pei-Wen Li
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Energy Band
Conduction band:
is composed of a number of subbands. The various subbands exhibit
localized and abssolute minima at the zone center or along one of the
high-symmetry diirections.
In Ge the conduction-band minimum occurs right at the zone boundary
along <111> direction. ( there are 8 equivalent conduction-band minima.)
The Si conduction-band minimum occurs at k~0.9(2/a) from the zone
center along <100> direction. (6 equivalent conduction-band minima)
GaAs has the conduction-band minimum at the zone center directly over
the valence-band maximum. Morever, the L-valley at the zone boundary
<111> direction lies only 0.29 eV above the conduction-band minimum.
Even under equilibrium, the L-valley contains a non-negligible electron
population at elevated temp. The intervalley transition should be taken
into account.
Solid-State Electronics
Chap. 3
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Dept. of E. E. NCU
Insulator
Solid-State Electronics
Chap. 3
Semiconductor
26
Metal
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Direct bandgap: the valence band maximum and the conduction band
minimum both occur at k = 0. Therefore, the transition between the
two allowed bands can take place without change in crystal momentum.
Solid-State Electronics
Chap. 3
27
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Dept. of E. E. NCU
Constant-Energy Surfaces
A 3-D k-space plot of all the allowed k-values associated with a given
energy E. The geometrical shapes, being associated with a given
energy, are called constant-energy surfaces (CES).
Consider the CESs characterizing the conduction-band structures near
Ec in Ge, Si, and GaAs.
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Constant-Energy Surfaces of Ec
For Ge, Ec occurs along each of the 8 equivalent <111> directions; a
Si conduction band minimum, along each of 6 equivalent <100>
directions. For GaAs, Ec is positioned at the zone center, giving rise to
a single constant-energy surface.
For energy slightly removed from Ec:
E-Ec Ak12+Bk22+Ck32,
where k1, k2, k3 are k-space coordinates measured from the center of a band
minimum along principle axes.
For example: Ge, the k1, k2, k3 coordinate system would be centered at the
[111] L-point and one of the coordinate axes, say k1-axis, would be directed
along the kx-ky-kz [111] direction.
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Instructor: Pei-Wen Li
Dept. of E. E. NCU
Effective Mass
In 3-D crystals the electron acceleration arising from an applied force
is analogously by
dv
1
= * F
dt m
where
1
1
1
= m yx m yy m yz
m * 1
1
1
mzx mzy mzz
1 2E
m = 2
h ki k j
1
ij
..i, j = x, y , z
2A
h2
therefore, we can define mii=me*, that is the the effective mass tensor reduces
to a scalar, giving rise to an orientation-indep. equation of motion like that of a
classical particle.
h2
2
2
2
E Ec =
Solid-State Electronics
Chap. 3
30
2m
2
e
(k x + k y + k z )
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Effective Mass
For Si and Ge:
E-Ec = Ak12+B(k22+k32)
so mij = 0 if ij, and mxx1 = 2 A2 , myy1 = mzz1 = 2 B2
h
Because m11 is associated with the k-space direction lying along the
axis of revolution, it is called the longitudinal effective mass ml*.
Similarly, m22 = m33, being associated with a direction perpendicular to
the axis of revolution, is called the transverse effective mass mt*.
h2 2 h2
2
2
E Ec =
k
+
(
k
+
k
)
1
2
3
2
2
2ml
2mt
Solid-State Electronics
Chap. 3
31
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Effective Mass
The relative sizes of ml* and mt* can be deduced by inspection of the Si
and Ge constant-energy plots.
perpendicu
lar
to
the
axis
of
revolution
*
l
*
t
For both Ge and Si, ml* > mt*. Further, ml*/mt* of Ge > ml*/mt* of Si.
The valence-band structure of Si, Ge, and GaAs are approximately
spherical and composed of three subbands. Thus, the holes in a given
subband can be characterized by a single effective mass parameter, but
three effective mass (mhh*, mlh*, and mso*) are required to characterize
the entire hole population. The split-off band, being depressed in
energy, is only sparsely populated and is often ignored.
Solid-State Electronics
Chap. 3
32
Instructor: Pei-Wen Li
Dept. of E. E. NCU
33
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 3
34
Instructor: Pei-Wen Li
Dept. of E. E. NCU
h2
Solid-State Electronics
Chap. 3
= k = k x + k y + k z = (nx + n y + nz ) 2
a
35
Instructor: Pei-Wen Li
Dept. of E. E. NCU
8
a
The factor, 2, takes into account the two spin states allowed for each
quantum state; the next factor, 1/8, takes into account that we are
considering only the quantum states for positive values of kx, ky, and kz.
Solid-State Electronics
Chap. 3
36
Instructor: Pei-Wen Li
Dept. of E. E. NCU
k2 =
2mE
h2
3
4
2
(
2
m
)
E dE a 3
3
h
3
4
2
(
2
m
)
E dE
3
h
(2mn ) E Ec
3
4
*
2
(
2
m
)
E Ev
p
3
h
37
Instructor: Pei-Wen Li
Dept. of E. E. NCU
mn* and mp* are the electron and hole density of states effective masses.
In general, the effective mass used in the density of states expression
must be an average of the band-structure effective masses.
Solid-State Electronics
Chap. 3
38
Instructor: Pei-Wen Li
Dept. of E. E. NCU
m p = (mhh ) + (mlh )
Solid-State Electronics
Chap. 3
39
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 3
40
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Statistics Mechanics
In dealing with large numbers of particles, we are interested only in the
statistical behavior of the whole group rather than in the behavior of
each individual particle.
There are three distribution laws determining the distribution of
particles among available energy states.
Maxwell-Boltzmann probability function:
Particles are considered to be distinguishable by being numbered for 1 to
N with no limit to the number of particles allowed in each energy state.
41
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Fermi-Dirac Distribution
Fermi-Dirac distribution function gives the probability that a quantum
state at the energy E will be occupied by an electron.
f (E) =
1
E E F
1 + exp(
)
kT
Solid-State Electronics
Chap. 3
42
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 3
43
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Fermi-Dirac Distribution
For T > 0K, electrons gain a certain amount of thermal energy so that
some electrons can jump to higher energy levels, which means that the
distribution of electrons among the available energy states will change.
For T > 0K, f(E = EF) =
Solid-State Electronics
Chap. 3
44
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Boltamann Approximation
Consider T >> 0K, the Fermi-Dirac function could be approximated by
f (E) =
1
( E EF )
exp
E E F
kT
1 + exp(
)
kT
Solid-State Electronics
Chap. 3
45
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Homework
3.5
3.8
3.16
Solid-State Electronics
Chap. 3
46
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 4
Instructor: Pei-Wen Li
Dept. of E. E. NCU
no = g c ( E ) f ( E )
Ec
po = g v ( E )[1 f ( E )]
Solid-State Electronics
Chap. 4
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 4
Instructor: Pei-Wen Li
Dept. of E. E. NCU
no = g c ( E ) f ( E )
Ec
Assume that the Fermi energy is within the bandgap. For electrons in
the conduction band, if Ec-EF >>kT, then E-EF>>kT, so the Fermi
probability function reduces to the Boltzmann approximation,
f ( E ) exp
Then
no =
Ec
4 2mn*
h3
32
[( E EF )]
kT
2mn* kT
( E EF )
E Ec exp
dE = 2
2
kT
h
2mn* kT
We may define N c = 2 h 2
32
( Ec E F )
exp
kT
32
Instructor: Pei-Wen Li
Dept. of E. E. NCU
po = g v ( E )[1 f ( E )]
Ev
1 f ( E ) exp
4 2m
* 32
p
h3
[( E F E )]
kT
2m*p kT
( EF E )
dE = 2
Ev E exp
2
kT
2m*p kT
We may define N v = 2 h 2
32
( E F Ev )
exp
kT
32
Instructor: Pei-Wen Li
Dept. of E. E. NCU
nopo product
The product of the general expressions for no and po are given by
Eg
( Ec E F )
( E F Ev )
N
N
N
no po = N c exp
exp
exp
=
c v
kT
v
kT
kT
Solid-State Electronics
Chap. 4
Instructor: Pei-Wen Li
Dept. of E. E. NCU
2mn* kT
( Ec E Fi )
( Ec E Fi )
no = ni = 2
N
=
exp
exp
c
2
h
kT
kT
32
2m*p kT
( E Fi Ev )
( E Fi Ev )
=
exp
exp
po = pi = 2
N
v
h2
kT
kT
Eg
n = N c N v exp
, where E g is the bandgap energy
kT
2
i
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 4
ni = 1.5x1010 cm-3
ni = 1.8x106 cm-3
ni = 1.4x1013 cm-3
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 4
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 4
10
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 4
11
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Ionization Energy
Ionization energy is the energy required to elevate the donor electron
into the conduction band.
Solid-State Electronics
Chap. 4
12
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Extrinsic Semiconductor
Adding donor or acceptor impurity atoms to a semiconductor will
change the distribution of electrons and holes in the material, and
therefore, the Fermi energy position will change correspondingly.
Recall
(E E )
(E E )
ni = N c exp
kT
Fi
N
=
exp
v
Fi
kT
( Ec E F )
( Ec EFi ) + ( EF EFi )
no = N c exp
N
=
exp
c
kT
kT
( E F Ev )
( E F E Fi ) + ( Ev EFi )
po = N v exp
N
=
exp
v
kT
kT
E E Fi
( E F E Fi )
no = ni exp F
p
n
=
and
exp
o
i
kT
kT
Solid-State Electronics
Chap. 4
13
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Extrinsic Semiconductor
When the donor impurity atoms are added, the density of electrons is
greater than the density of holes, (no > po) n-type; EF > EFi
When the acceptor impurity atoms are added, the density of electrons
is less than the density of holes, (no < po) p-type; EF < EFi
Solid-State Electronics
Chap. 4
14
Instructor: Pei-Wen Li
Dept. of E. E. NCU
15
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 4
16
Instructor: Pei-Wen Li
Dept. of E. E. NCU
1
E EF
1 + exp( d
)
g
kT
, g : degeneracy factor
Na
, g = 4 for the acceptor level in Si and GaAs
1
E F Ea
1 + exp(
)
g
kT
Solid-State Electronics
Chap. 4
17
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Complete Ionization
If we assume Ed-EF>> kT or EF-Ea >> kT (e.g. T= 300 K), then
( Ed E F )
nd 2 N d exp
N d+ = N d nd N d
kT
( E F Ea )
pa 4 N a exp
N a = N a pa N a
kT
Solid-State Electronics
Chap. 4
18
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Freeze-out
At T = 0K, no electrons from the donor state are thermally elevated
into the conduction band; this effect is called freeze-out.
At T = 0K, all electrons are in their lowest possible energy state; that is
for an n-type semiconductor, each donor state must contain an electron,
therefore, nd = Nd or Nd+ = 0, which means that the Fermi level must be
above the donor level.
Solid-State Electronics
Chap. 4
19
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Charge Neutrality
In thermal equilibrium, the semiconductor is electrically neutral. The
electrons distributing among the various energy states creating
negative and positive charges, but the net charge density is zero.
Compensated Semiconductors: is one that contains both donor and
acceptor impurity atoms in the same region. A n-type compensated
semiconductor occurs when Nd > Na and a p-type semiconductor
occurs when Na > Nd.
The charge neutrality condition is expressed by
no + N a = po + N d+
20
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Compensated Semiconductor
Solid-State Electronics
Chap. 4
21
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Compensated Semiconductor
If we assume complete ionization, Nd+ = Nd and Na- = Na, then
ni2
no + N a = po + N d , recall po =
no
ni2
2
no + N a =
+ N d no ( N d N a )no ni2 = 0
nn
no
(N N a ) +
= d
2
Nd Na
2
+ ni
(N N d ) +
= a
2
Na Nd
2
+ ni
2
is used to
22
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Compensated Semiconductor
Solid-State Electronics
Chap. 4
23
Instructor: Pei-Wen Li
Dept. of E. E. NCU
N
N
Ec E F = kT ln c
and EF Ev = kT ln v
no
po
no = N c exp
( Ec E F )
n
or E F E Fi = kT ln o
ni
Solid-State Electronics
Chap. 4
p
and EFi Ev = kT ln o
ni
24
Instructor: Pei-Wen Li
Dept. of E. E. NCU
EF(n, p, T)
Solid-State Electronics
Chap. 4
25
Instructor: Pei-Wen Li
Dept. of E. E. NCU
EF(n, p, T)
Solid-State Electronics
Chap. 4
26
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Homework
4.18
4.20
4.24
Solid-State Electronics
Chap. 4
27
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Carrier Drift
Carrier Diffusion
Graded Impurity Distribution
Hall Effect
Homework
Solid-State Electronics
Chap. 5
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Carrier Drift
When an E-field (force) applied to a semiconductor, electrons and
holes will experience a net acceleration and net movement, if there are
available energy states in the conduction band and valence band. The
net movement of charge due to an electric field (force) is called drift.
Mobility: the acceleration of a hole due to an E-field is related by
* dv
= qE
F = mp
dt
If we assume the effective mass and E-field are constants, the we can
obtain the drift velocity of the hole by
eEt
vd = * + vi t , E
mp
where vi is the initial velocity (e.g. thermal velocity) of the hole and t is
the acceleration time.
Solid-State Electronics
Chap. 5
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Mobility
E=0
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Mobility
If the mean time between collisions is denoted by cp, then the average
drift velocity between collisions is
vdp e cp
e cp
p =
= *
vd = * E p E
m
E
mp
p
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Mobility
Electron mobility
Solid-State Electronics
Chap. 5
Hole mobility
5
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Conductivity
The conductivity of a semiconductor material is defined by Jdrf E,
so = e(nn+pp) in units of (ohm-cm)-1
The resistivity of a semiconductor is defined by 1/
Solid-State Electronics
Chap. 5
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Resistivity Measurement
Four-point probe measurement
= 2s
Solid-State Electronics
Chap. 5
V
Fc ; Fc : correction factor
I
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Velocity Saturation
So far we assumed that mobility is indep. of E-field, that is the drift
velocity is in proportion with the E-field. This holds for low E-filed. In
reality, the drift velocity saturates at ~107 cm/sec at an E-field ~30
kV/cm. So the drift current density will also saturate and becomes
indep. of the applied E-field.
Solid-State Electronics
Chap. 5
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 5
10
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 5
11
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Carrier Diffusion
Diffusion is the process whereby particles flow from a region of high
concentration toward a region of low concentration. The net flow of
charge would result in a diffusion current.
Solid-State Electronics
Chap. 5
12
Instructor: Pei-Wen Li
Dept. of E. E. NCU
or
3-D
Solid-State Electronics
Chap. 5
dx
J = en n E x + ep p E x + eDnn eD p p
13
Instructor: Pei-Wen Li
Dept. of E. E. NCU
14
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Induced E-Field
d
d ( E /( e))
1 dE
Fi
Fi
=
The induced E-field is defined as E x = =
dx
dx
e dx
that is, if the intrinsic Fermi level changes as a function of distance
through a semiconductor in thermal equilibrium, an E-field exists.
If we assume a quasi-neutrality condition in which the electron
concentration is almost equal to the donor impurity concentration, then
N d ( x)
E Ei
(
)
ln
no ni exp F
N
x
E
E
kT
=
d
F
i
kT
ni
d ( EF Ei ) d ( Ei )
kT dN d ( x)
=
=
dx
dx
N d ( x) dx
kT 1 dN d ( x)
E x =
e N d ( x) dx
15
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Einstein Relation
Assuming there are no electrical connections between the
nonuniformly doped semiconducotr, so that the semiconductor is in
thermal equilibrium, then the individual electron and hole currents
must be zero.
dn
J n = 0 = en n E x + eDn
dx
Dn
kT
- - - -Einstein relation
n
e
D p kT
=
Similarly, the hole current Jp = 0
p
e
Solid-State Electronics
Chap. 5
16
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Einstein Relation
Einstein relation says that the diffusion coefficient and mobility are not
independent parameters.
Typical mobility and diffusion coefficient values at T=300K
( = cm2/V-sec and D = cm2/sec)
Silicon
GaAs
Germaium
Solid-State Electronics
Chap. 5
Dn
Dp
1350
8500
3900
35
220
101
480
400
1900
12.4
10.4
49.2
17
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Hall Effect
The hall effect is a consequence of the forces that are exerted on
moving charges by electric and magnetic fields.
We can use Hall measurement to
Distinguish whether a semiconductor is n or p type
To measure the majority carrier concentration
To measure the majority carrier mobility
Solid-State Electronics
Chap. 5
18
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Hall Effect
A semiconductor is electrically connected to Vx and in turn a current Ix
flows through. If a magnetic field Bz is applied, the electrons/holes
flowing in the semiconductor will experience a force F = q vx x Bz in
the (-y) direction.
If this semiconductor is p-type/n-type, there will be a buildup of
positive/negative charge on the y = 0 surface. The net charge will
induce an E-field EH in the +y-direction for p-type and -y-direction for
n-type. EH is called the Hall field.
In steady state, the magnetic force will be exactly balanced by the
induced E-field force. F = q[E + v x B] = 0 EH = vx Bz and the Hall
voltage across the semiconductor is VH = EHW
VH >0 p-type, VH < 0 n-type
Solid-State Electronics
Chap. 5
19
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Hall Effect
VH = vx W Bz, for a p-type semiconductor, the drift velocity of hole is
vdx =
Jx
Ix
I B
I B
=
VH = x z p = x z
ep (ep )(Wd )
epd
edVH
for a n-type,
n=
I x Bz
edVH
Solid-State Electronics
Chap. 5
20
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Hall Effect
Solid-State Electronics
Chap. 5
21
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Homework
5.14
5.20
Solid-State Electronics
Chap. 5
22
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 5
23
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 6
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Nonequilibrium
When a voltage is applied or a current exists in a semiconductor device,
the semiconductor is operating under nonequilibrium conditions.
Excess electrons/holes in the conduction/valence bands may be
generated and recombined in addition to the thermal equilibrium
concentrations if an external excitation is applied to the semiconductor.
Examples:
1. A sudden increase in temperature will increase the thermal
generation rate of electrons and holes so that their concentration will
change with time until new equilibrium reaches.
2. A light illumination on the semiconductor (a flux of photons) can
also generate electron-hole pairs, creating a nonequilibrium condition.
Solid-State Electronics
Chap. 6
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 6
Instructor: Pei-Wen Li
Dept. of E. E. NCU
For the direct band-to-band generation, the generation rates (in the unit
of #/cm3-sec) of electrons and holes are equal; gn = gp (may be
functions of the space coordinates and time)
Solid-State Electronics
Chap. 6
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Recombination Process
Band-to-Band: direct thermal recombination.
This process is typically radiative,
with the excess energy released
during the process going into the
production of a photon (light)
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Recombination Process
Recombination via Shallow Levels:
induced by donor or acceptor sites.
At RT, if an electron is captured at a donor site,
however, it has a high probability of being re-emitted into
the conduction band before completing the recombination
process. Therefore, the probability of recombination via
shallow levels is quite low at RT.
It should be noted that the probability of observing shallowlevel processes increases with decreasing system temperature.
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Recombination Process
Recombination involving Excitons: Recombination involving excitons is a
very important mechanism at low temperatures and is the major lightproducing mechanism in LEDs.
Auger Recombinations:
In a Auger process, band-to-band recombination
at a bandgap center occurs simultaneously with
the collision between two like carriers. The
energy released by the recombination or trapping
subprocess is transferred during the collision to
the surviving carrier. Subsequently, this high
energetic carrier thermalizes-loses energy
through collisions with the semiconductor lattice.
Auger recombination increases with carrier concentration, becoming very
important at high carrier concentration. Therefore, Auger recombination
mmust be considered in treating degenerately doped regions (like solar cell,
junction lasers, and LEDs)
Solid-State Electronics
Chap. 6
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Generation Process
Band-to-Band generation:
Solid-State Electronics
Chap. 6
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Generation Process
Impact-Ionization:
An e-h pair is produced as a result of the
energy released when a highly energetic
carrier collides with the crystal lattice. The
generation of carriers through impact ionization
routinely occurs in the high e-filed regions of
devices and is responsible for the avalanche
breakdown in pn junctions.
Solid-State Electronics
Chap. 6
10
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Momentum Consideration
In a direct semiconductor where the kvalues of electrons and holes are all
bunched near k = 0, little change is
required for the recombination process
to proceed. The conservation of both
energy and crystal momentum is readily
met by the emission of a photon.
In a indirect semiconductor, there is
a large change in crystal momentum
associated with the recombination
process. The emission of a photon
will conserve energy but cannot
simultaneously conserve momentum.
Thus for band-to-band recombination
to proceed in an indirect semiconductor a phonon must be emitted coincident
with the emission of a photon.
Solid-State Electronics
Chap. 6
11
Instructor: Pei-Wen Li
Dept. of E. E. NCU
n0
12
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Continuity Equations
Consider a differential volume element in which a 1-D hole flux, Fp+ (#
of holes/cm2-sec), is entering this element at x and is leaving at x+dx.
Fp
p
p
=
+ gp
t
x
pt
13
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Ambipolar Transport
If a pulse of excess electrons and holes are created at a particular point
due to an applied E-field, the excess e-s and h+s will tend to drift in
opposite directions. However, any separation of e-s and h+s will induce
an internal E-field and create a force attracting the e-s and h+s back.
The internal E-field will hold the pulses of excess e -s and h+s together,
then the electrons and holes will drift or diffuse together with a single
effective mobility or diffusion coefficient. This is so called ambipolar
diffusion or ambipolar transport.
Fig. Show the above situation
Solid-State Electronics
Chap. 6
14
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Ambipolar Transport
Solid-State Electronics
Chap. 6
15
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Ambipolar Transport
Solid-State Electronics
Chap. 6
16
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Quasi-Fermi Levels
At thermal-equilibrium, the electron and hole concentrations are
functions of the Fermi level by
E E Fi
E Fi E F
p
n
no = ni exp F
=
and
exp
o
i
kT
kT
kT
kT
Solid-State Electronics
Chap. 6
17
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Quasi-Fermi Levels
For a n-type semiconductor under thermal equilibrium, the band
diagram is
Under low-level injection, excess carriers are created and the quasiFermi level for holes (minority), EFp, is significantly different from EF.
Solid-State Electronics
Chap. 6
18
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Excess-Carrier Lifetime
An allowed energy state, also called a trap, within the forbidden
bandgap may act as a recombination center, capturing both electrons
and holes with almost equal probability. (it means that the capture
cross sections for electrons and holes are approximately equal)
Acceptor-type trap:
it is negatively charged when it contains an electron and it is neutrall when it does
not contain an electron.
Donor-type trap:
it is positively charged when empty and neutral when filled with an electron
Solid-State Electronics
Chap. 6
19
Instructor: Pei-Wen Li
Dept. of E. E. NCU
20
Instructor: Pei-Wen Li
Dept. of E. E. NCU
21
Instructor: Pei-Wen Li
Dept. of E. E. NCU
kT
Cn n + C p p '
Cn ( n + n ' ) + C p ( p + p ' )
and Rn = R p =
Solid-State Electronics
Chap. 6
22
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Surface Effects
Surface states are functionally equivalent to R-G centers localized at
the surface of a material. However, the surface states (or interfacial
traps) are typically found to be continuously distributed in energy
throughout the semiconductor bandgap.
Solid-State Electronics
Chap. 6
23
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 6
24
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Homework
6.14
6.17
6.19
Solid-State Electronics
Chap. 6
25
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Solid-State Electronics
Chap. 7
Instructor: Pei-Wen Li
Dept. of E. E. NCU
P-N junction
P-Semiconductor
N-Semiconductor
EC
EC
EFi
EFi
EF
EV
EF
EV
P-Semiconductor
EC
N-Semiconductor
EC
EFi
EF
EV
EFi
EF
EV
Solid-State Electronics
Chap. 7
Instructor: Pei-Wen Li
Dept. of E. E. NCU
P-N Junction
P-Semiconductor
EC
N-Semiconductor
EC
EFi
EF
EV
EFi
EV
Depletion region
Solid-State Electronics
Chap. 7
EF
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Hetero-Junction
Semiconductor B
Semiconductor A
EC
EC
EFi
EF
EFi
EF
EV
EV
EC < 20 meV
EC ~0.15 eV
EC
Relaxed Si0.7Ge0.3
Strained Si0.8Ge0.2
bulk Si
Eg = 1.17 eV
Eg ~ 1.08 eV
Eg ~ 1.0 eV
EV ~ 0.15 eV
EV
Eg ~ 0.88 eV
EV ~ 0.05 eV
Type II Alignment
Type I Alignment
Solid-State Electronics
Chap. 7
Strained Si
Instructor: Pei-Wen Li
Dept. of E. E. NCU
Quantum Well
Electron
Confinement
EC ~ 0.02 eV
relaxed Si0.7Ge0.3
Eg = 1.08 eV
EC ~0.18 eV
Strained Si0.3Ge0.7
Strained Si
Eg ~ 0.72 eV
Eg = 0.88 eV
EV ~0.34 eV
EV ~ 0.48 eV
Hole
Confinement
Solid-State Electronics
Chap. 7
Instructor: Pei-Wen Li
Dept. of E. E. NCU
.. .. .. .. .. .. .. ..
Strained Si1-xGex
Relaxed Si1-xGex
Relaxed Si1-xGex
misfit dislocation
misfit dislocation
bulk Si
Solid-State Electronics
Chap. 7
.. .. .. .. .. .. .. ..
Strained Si
bulk Si
Instructor: Pei-Wen Li
Dept. of E. E. NCU