a OO = nnn) Eo) + FDn FB | nen, (1-H), Noeny st oT = _ $DaN, Te we Tnb97 = Bran Eto Ae = Heaipa - Stan = 3.35. 10 Afem™ (H) Stree from Table 13 the breakdown fell of St is 3x 10° V/em the charge configuration ds net reasonable, (cy If the current ae X=0 can only be 105 Alom*, Then £0) Da should be &t0> “Fiat Th Gace + el J= = 2560 V/em td p= Goma) (1-%) The result of park Ca) com be used provided n,n, = wn in The expression for Eu fe axe ay; bey = BOSNaW. Zé; Into Be fa loa - ite We repre Jute = 10° afem? , ben Ndp = Ms ~ Fion Fiat Tate + Sd toto? = 332x102 Ica Hy SNe 332 x10" o 10% mS The relative deviation from electrical neutrality is tremely small Energy Reture: Sag Set electron has avarags ammagek ote Kinatic enargy of Site meeps “350m Vs 2kT a On = Wy? =3.12 x10 “2 \ dy donor ~ )En= Ceonstant) e = Cconstant T , 4 ‘trapping Werte Veh T%, Ga o. Capture rate = = rUNe Veh Gn at for extrinsic Si, Me is conctantt, ge = 3.32% 10° -# 5.4 Ee 55. 1 For very high level injection pin Sri and pine ni elt EeVet From ey (5.2.4a) with P= U= Ny Vi Gn Sp 1* Me mat En G, N Op nt Onn + Gn ~ ip5.6 5.7 ff Gp + 5y oe S74 On Me Ven &p Tagg ce 222m 2% . tw? TS : “HR Mnense ee Ve. OP Tag oe Le ) yt tp if Onto “ff Me Vind MeVinSe oe if r Th P= 0p T= Top = and Tag =2T. Dp 8 =o 4 05.3.10) | For short base diode , recombination th the balk can be neglected, ie.Pn =o , Te So that hy _ . TH =o pln =A+Bx ee The bundy conditions are PyCxn) = =P.,(e Kr -1) and Pale =O 2, Rol OM r)we (B= - Bo (236 —1) We = Xn We - Xn 4 » Rows = mACer Pod = Pro (O Pate 2B (oF OH a) (where Wel? We-Xy) Pitman variation Cay. ¢5.3.172] Th the steady State , &g.(5.1-3b) tadaces to = 8 (Gp Rp) = -g Fim = ~48 Tntegrating this equation across the n-type neutral bulk gives , Tela) ~ Jpn) = “A pen dx. For aleng-base dade Plw_)—70 By 50 that ty, aj plex dx Under vewerse bras &. (5.3.12) reduces to Rid -R, 50 that Z6q)= ~ HP (0 oc sate) @ thot Bom) = ae P alx =e = tens Yny For along base dicde Gere- mY, orl se thet a tr sf L 2 Jpn) > en ~ Blade where we have used bp=JB% A similar integration for lectrans on the p-Sicle gives = BMlpe Pn TuC~¥p) = ~ Bee Pe =¢a*nd fo@ UrFox the ideal diode, there is no generation in the space ~ Charge Jone, and the total veverse Current density (Ss Fe > Fyn +I apa} [Bere + MeeB J Hy Using Fro = Aa and Ye = Tes - 9K "Tet E+ ArT] eahiche ts a Limiting reverse bias current expression obtained from E4.05.3. 159. 28 ak xn Rw=Ae “ +Be a For long bose diode B=0, Pas) Be (GP 8 a © (5.3.12) oes Serb ax = feo * eax OP oa 2 7a SL? on J OF ax lure Ss, Ie dy + Xf nay Tee%ay Lye Tay alee he 2 er (F431) + Xnblpe _alpXn +lp tole Le * c then let yeox-%n Leper r 54 ' Cap xa Sel nd Fern) q@) = ory), ee’ ss ore Th Op) + Jpboen) i +1 Spt Xn) From Eg. (5.3.13) anal a (5.3. 4) Ue FpCon) = BPeNe™ : BL pn) = EF cr (eR -1) and Tap) = ah (eke Ys Sarat NEES v Bp a Ln +1 a ate +) (b) Fer Q.=ee0l@-om Ny = Brig ten}, for Q= tem, Ng=1-5x10° Con? My (the mobility of electrons in the p-regio) = 1100 Wjasec Mp (the mobility of holes in the n- region) = 15 ©M7A)sec Da/op= Mire 14.67 § : -1 - 41] = 1.55 ¥10