MITSUBISHI RF POWER TRANSISTOR 2801971 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2801971 isa silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications, FEATURES © High power gain: Gpe 2 1068 Vcc = 13.5V, Po = BW, f= 175MHz ‘© Emitter ballasted construction, gold metallization for high reliability and good performances. ‘© 0-220 package similar is combinient for mounting, © Ability of withstanding more than 20:1 load VSWR when ‘operated at Vec = 15.2V, Po = 6W, f= 175MH2. APPLICATION 4 to 5 watts output power amplifiers in VHF band applications. OUTLINE DRAWING ABSOLUTE MAXIMUM RATINGS (7c. © ease @ Ewirren ein) @ couector aoe |B Fi ewrrren) 5° ule omar aie) Sym Prana oe Raine Tog | Stripe tenor ELECTRICAL CHARACTERISTICS (7-~25'Cunessomarmsesceiies) Sita Paete Tat conaitons nt we [te | ie ‘ramen | Goleta bie teu vloge emis 7 Colo fo itr Eenclow vle 7 T v no | Coleraine ~ [se] Teso | Enter cual aaron _— i 00] aa nee | De fomarscurent gene Vee =10V, lo= 0.78 a Covecior ney Yeon 13Sv. Pin=06W, 17SMHE Tay] ag % wv. 87TEST CIRCUIT ta1sMite TR Zn=soo 00, 1/27 corner >” ce cose TYPICAL EL en amu, octur, 24 nar PERFORMANCE DATA COLLECTOR DISSIPATION vs. ‘AMBIENT TEMPERATURE, =— zg a | AMBIENT TEMPERATURE Ty PC} Dc CURRENT GAIN vs. COLLECTOR CURRENT ‘9 z tO] Bee | doer ae as sar tS COLLECTOR CURRENT Ie MITSUBISHI RF POWER TRANSISTOR 28¢1971 NPN EPITAXIAL PLANAR TYPE Zour=s00 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE oma RENT Ie (AD ea! COLLECTOR 10 EMITTER VOLTAGE Vee COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. BASE TO EMITTER RESISTANCE om T Tentse 2 VOUAGE Vianycer 1 120 3-30-1600 ROO HHT SOTTOTT BASE TO EMITTER RESISTANCE Ra (2 Nov." 97 eeMITSUBISHI RF POWER TRANSISTOR 28C1971 PN EPITAXIAL PLANAR TYPE ‘OUTPUT POWER, COLLECTOR OUTPUT CAPACITANCE v8, COLLECTOR EFFICIENCY ONSOLLECTOR TO BASE VOLTAGE Vs INPUT POWER il (ai Tee ty 8 > a oy z SU g { 2 8 0} = ha g Tr1 5 4 i ] é g 3 d fo OUTPUT POWER VS. COLLECTOR o. - 7 12 1 16 18 aH ELECTRIC