XL0840

SENSITIVE GATE 0.8A SCRs

MAIN FEATURES
Symbol

Value

Unit

IT(RMS)

0.8

VDRM

400

IGT

200

G
K

DESCRIPTION
Thanks to its highly sensitive triggering levels, the
XL0840 device is suitable for all high volumes applications where the available gate current is limited,
such as Christmas lights control.

GA

TO-92

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current (180 conduction angle)

TI = 55C

0.8

IT(AV)

Average on-state current (180 conduction angle)

TI = 55C

0.5

ITSM

Non repetitive surge peak on-state

current

Tj = 25C

IT(RMS)

tp = 10 ms

I t Value for fusing

tp = 10 ms

Tj = 25C

0.24

A2s

dI/dt

Critical rate of rise of on-state current

IG = 2 x IGT, tr 100ns

F = 60 Hz

Tj = 125C

30

A/s

IGM

Peak gate current

tp = 20s

Tj = 125C

Tj = 125C

0.1

- 40 to + 150
- 40 to + 125

I t

PG(AV)
Tstg
Tj

tp = 8.3 ms

Average gate power dissipation

Storage junction temperature range
Operating junction temperature range

January 2002 - Ed: 1A

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XL0840
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol
IGT

Test Conditions
VD=12V RL=140

VGT
Tj = 125C

XL0840

Unit

MAX.

200

MAX.

0.8

MIN.

0.1

VGD

VD=VDRM RL=3.3k RGK = 1k

VRG

IRG = 10A

MIN.

IH

IT= 50mA RGK = 1k

MAX.

mA

IL

IG = 1mA RGK = 1k

MAX.

mA

Tj = 125C

MIN.

75

V/s

Tj = 25C

MAX.

1.95

dV/dt

VD=67% VDRM

VTM

ITM = 1.6A

VTO

Threshold voltage

Tj = 125C

MAX.

1.0

Rd

Dynamic resistance

Tj = 125C

MAX.

600

VDRM RGK = 1k

Tj = 25C

MAX.

IDRM

RGK = 1k

tp = 380s

Tj = 125C

100

THERMAL RESISTANCES
Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient (DC)

150

C/W

Rth(j-l)

Junction to lead (DC)

80

C/W

PRODUCT SELECTOR
Part Number

Voltage

Sensitivity

Package

XL0840

400V

200 A

TO-92

ORDERING INFORMATION

08

40

SENSITIVE SCR
LIGHT CONTROL

VOLTAGE:
40: 400V

CURRENT:0.8A
OTHER INFORMATION

2/5

Part Number

Marking

Weight

Base quantity

Packing mode

XL0840

XL0840

0.2 g

2500

Bulk

XL0840
Fig. 1: Maximum average power dissipation versus average on-state current.

Fig. 2-1: Average and D.C. on-state current versus lead temperature.

P(W)

IT(av)(A)

1.0

0.9

=180

0.9

D.C.

0.8

0.8

0.7

0.7

0.6
=180

0.6

0.5
0.5

0.4

0.4

0.3

0.3
180

0.2

0.1

0.2

0.1

Tlead(C)

IT(av)(A)

0.0
0.00

0.0
0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4
with recommended pad layout).

25

50

75

100

125

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration.

K=[Zth(j-a)/Rth(j-a)]

IT(av)(A)

1.E+00

0.7
0.6

D.C.

0.5

=180

0.4

1.E-01
0.3
0.2
0.1

Tamb(C)

tp(s)

0.0

1.E-02
0

25

50

75

100

125

Fig. 4: Relative variation of gate trigger current,

holding current and latching current versus junction temperature (typical values).

1.E-02

1.E+00

1.E+01

1.E+02

1.E+03

Fig. 5: Relative variation of holding current versus

gate-cathode resistance (typical values).

IGT, IH, IL[Tj] / IGT, IH, IL [Tj=25C]

IH [Rgk] / IH [Rgk=1k]

5.0

11

4.5

10

4.0

Tj=25C

3.5
3.0

1.E-01

IGT

7
6

2.5

2.0

1.5

3
1.0

IH & IL
(Rgk=1kW)

0.5

Tj(C)

0.0

Rgk(k)

1
0

-40 -30 -20 -10

10 20 30 40 50 60 70 80 90 100 110 120 130

0.01

0.10

1.00

10.00

3/5

XL0840
Fig. 6: Relative variation of dV/dt immunity versus
gate-cathode resistance (typical values).

Fig. 7: Relative variation of dV/dt immunity versus

gate-cathode capacitance (typical values).

dV/dt [Cgk] / dV/dt [Rgk=1k]

dV/dt [Rgk] / dV/dt [Rgk=1k]

5

10
Tj=125C
VD=270V

Tj=125C
VD=270V
Rgk=1kW

8
7

6
5

4
3

2
1

Rgk(k)
0
0.10

Cgk(nF)

1.00

10.00

Fig. 8: Surge peak on-state current versus number

of cycles.

1.00

10.00

Fig. 9: Non repetitive surge peak on-state current

for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.

ITSM(A)

ITSM(A), I2t (A2s)

100.0
Tj initial=25C
ITSM

7
tp=10ms

Non repetitive
Tj initial=25C

10.0

5
4
3

Repetitive
Tlead=50C

1.0

2
It

tp(ms)

Number of cycles
0

0.1
1

10

100

1000

Fig. 10: On-state characteristics (maximum values).

ITM(A)
10.00

1.00
Tj=125C

Tj=25C

0.10

Tj max. :
Vto = 1.00 V
Rd = 600 m

VTM(V)
0.01
0

4/5

0.01

0.10

1.00

10.00

XL0840
PACKAGE MECHANICAL DATA
TO-92
DIMENSIONS
REF.

Millimeters
Min.

A
a

Typ. Max. Min.

Typ. Max.

1.35

0.053

B
B

Inches

4.70

0.185

C
F

2.54

0.100

4.40

0.173

12.70

0.500

3.70

0.146

0.50

0.019

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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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