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SEMICONDUCTOR TECHNICAL DATA

 




NPN Silicon

COLLECTOR
1
2
BASE
3
EMITTER

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector Emitter Voltage

VCEO

40

Vdc

Collector Base Voltage

VCBO

75

Vdc

Emitter Base Voltage

VEBO

6.0

Vdc

Collector Current Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watts
mW/C

TJ, Tstg

55 to +150

Symbol

Max

Unit

Operating and Storage Junction

Temperature Range

1
2

CASE 2904, STYLE 17

TO92 (TO226AA)

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient

RqJA

200

C/W

Thermal Resistance, Junction to Case

RqJC

83.3

C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Min

Max

Unit

Collector Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

40

Vdc

Collector Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

75

Vdc

Emitter Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

ICEX

10

nAdc

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150C)

ICBO

0.01
10

Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

IEBO

10

nAdc

Collector Cutoff Current

(VCE = 10 V)

ICEO

10

nAdc

Base Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

IBEX

20

nAdc

Characteristic

OFF CHARACTERISTICS

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

Adc

P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic

Symbol

Min

Max

Unit

35
50
75
35
100
50
40

300

0.3
1.0

0.6

1.2
2.0

fT

300

MHz

Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

8.0

pF

Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

25

pF

2.0
0.25

8.0
1.25

8.0
4.0

50
75

300
375

5.0
25

35
200

ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = 55C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)

hFE

Collector Emitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

Base Emitter Saturation Voltage(1)

(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

Vdc

Vdc

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hie

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hre

SmallSignal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hoe

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)

rbCc

150

ps

NF

4.0

dB

(VCC = 30 Vdc, VBE(off) = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)

td

10

ns

tr

25

ns

(VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc) (Figure 2)

ts

225

ns

tf

60

ns

Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)

X 10 4

mmhos

SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time

1. Pulse Test: Pulse Width

300 ms, Duty Cycle
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.

Motorola SmallSignal Transistors, FETs and Diodes Device Data

P2N2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V

+ 30 V
1.0 to 100 s,
DUTY CYCLE 2.0%

+16 V
0
2 V

200

1.0 to 100 s,
DUTY CYCLE 2.0%

+16 V
0

1 k
< 2 ns

1k

14 V

CS* < 10 pF

< 20 ns

Figure 1. TurnOn Time

CS* < 10 pF

1N914

Scope rise time < 4 ns

*Total shunt capacitance of test jig,
connectors, and oscilloscope.

4 V

Figure 2. TurnOff Time

1000
700
500
hFE , DC CURRENT GAIN

200

TJ = 125C

300
200
25C
100
70
50

55C

30

VCE = 1.0 V
VCE = 10 V

20
10
0.1

0.2

0.3

0.5 0.7

1.0

2.0

3.0

5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

70

100

200

300

500 700 1.0 k

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 3. DC Current Gain

1.0
TJ = 25C
0.8

0.6

IC = 1.0 mA

10 mA

150 mA

500 mA

0.4

0.2

0
0.005

0.01

0.02 0.03

0.05

0.1

0.2

0.3
0.5
1.0
IB, BASE CURRENT (mA)

2.0

3.0

5.0

10

20

30

50

Figure 4. Collector Saturation Region

Motorola SmallSignal Transistors, FETs and Diodes Device Data

P2N2222A
200

500
IC/IB = 10
TJ = 25C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0

30
20
10
7.0
5.0

200

ts = ts 1/8 tf

100
70
50

tf

30
20
10
7.0
5.0

3.0
2.0
5.0 7.0

10

200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)

5.0 7.0 10

500

20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)

Figure 5. Turn On Time

IC = 1.0 mA, RS = 150

500 A, RS = 200
100 A, RS = 2.0 k
50 A, RS = 4.0 k

6.0

f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE

4.0

IC = 50 A
100 A
500 A
1.0 mA

6.0

4.0

2.0

2.0

0
0.01 0.02 0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

20

100 200

500 1.0 k 2.0 k

5.0 k 10 k 20 k

50 k 100 k

RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects

Figure 8. Source Resistance Effects

Ceb
10
7.0
5.0
Ccb
3.0

0.5 0.7 1.0

2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

20 30

50

f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)

f, FREQUENCY (kHz)

20

0.2 0.3

0
50

50 100

30

CAPACITANCE (pF)

500

10

8.0

300

Figure 6. Turn Off Time

10

2.0
0.1

VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25C

300

t, TIME (ns)

t, TIME (ns)

100
70
50

500
VCE = 20 V
TJ = 25C

300
200

100
70
50
1.0

2.0

3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)

50

70 100

Figure 10. CurrentGain Bandwidth Product

Motorola SmallSignal Transistors, FETs and Diodes Device Data

P2N2222A
1.0

+0.5
TJ = 25C
0
COEFFICIENT (mV/ C)

V, VOLTAGE (VOLTS)

0.8
VBE(sat) @ IC/IB = 10
1.0 V

0.6
VBE(on) @ VCE = 10 V
0.4

0.2

RqVC for VCE(sat)

0.5
1.0
1.5
RqVB for VBE

2.0
VCE(sat) @ IC/IB = 10

2.5
0.1 0.2

50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)

500 1.0 k

Figure 11. On Voltages

Motorola SmallSignal Transistors, FETs and Diodes Device Data

0.1 0.2

0.5

1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)

500

Figure 12. Temperature Coefficients

P2N2222A
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

D
J

X X
G
H
V

SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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*P2N2222A/D*

P2N2222A/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data