SKM 400GB124D

Absolute Maximum Ratings

Symbol Conditions
IGBT
%,8
,
,=

%!8
? 
%

 5 26 :3 7,

5 1 
8=/  @ 

-=
-


5 13 E  AE ? 5 163 7,

SKM 400GB124D

-=

 5 26 :3 7,

5 1 

-


5 13 E  AE ? 5 163 7,

SKM 400GAL124D
Characteristics
Symbol Conditions
IGBT

SKM 400GAR124D

%!8 

Features
  
   
     

1233
6;3 <33
*33
> 23
 <3 AAA B 163 126

%
/
/
%
7,

2633

CD3 2*3
*33

/
/

2D33

CD3 2*3
*33

/
/

2D33

Freewheeling diode
-





Units

/, 1  A
 5 26 :3 7,

5 1 

Low Loss IGBT Modules

Values

Inverse diode

SEMITRANSTM 3




 5 26 7,   $ 

)

  

  !"

#$    
%& $    $ $

 
  
'   
(& )
   * + ,
#
)
- . )   ,/# 0
 

 (
  
0," 0 ,

 "  
 & $  
#   12   

   23 

Typical Applications
 $   )   
  
 4

,8

%,8 
,8
%,8 

%!8 5 %,8 , 5 12 /
%!8 5 3 %,8 5 %,8 ? 5 26 126 7,
? 5 26 126 7,
%!8 5 16 % ? 5 26 126 7,
, 

 5 26 7,   $ 

)
min.
<6

5 C33 / %!8 5 16 % 



,
,
,
#,8

  )$    
%!8 5 3 %,8 5 26 % ) 5 1 'G

=,,HB88H

A  

5 26 126 7,

  

 ))
)

%,, 5 *33 % ,  5 C33 /

=! 5 =!)) 5 6 F ? 5 126 7,
%!8 5 > 16 %

8 8))

typ.

max.

Units

66
32
11 11
CC <C

*6
3*
126 126
< 6C

%
/
%
F

21 2<

2<6 2:6

22
CC
12

C3
<
1*
23

'

3C6 36

F

:6
*6
*:3
6*






C* <2

I

Inverse diode
%- 5 %8,

J

-  5 C33 /E %!8 5 3 %E ? 5 26 126

7,
? 5 126 7,
? 5 126 7,
-  5 C33 /E ? 5 126  7,
K 5 /KL

8

%!8 5 %

% 

==

2 1:

26

11

12
C6

%
F
/
L,

1C*
C*

I

FWD
%- 5 %8,
% 

J

- 5 C33 /E %!8 5 3 % ? 5 26 126 7,

? 5 126 7,
? 5 126 7,
- 5 C33 /E ? 5 126  7,
K 5 /KL

8

%!8 5 %

==

2 1:
11

26
12
C6

1C*
C*

%
%
F
/
L,
I

Thermal characteristics
= ?
= ?0
= ?-0

 !"

  0

 -N0

336
3126
3126

MKN
MKN
MKN

= 

 

33C:

MKN

6
6




C26

Mechanical data
GB

GAL

GAR




  O *
   *

19-09-2005 RAA

C
26

by SEMIKRON

SKM 400GB124D

Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'

Fig. 2 Rated current vs. temperature IC = f (TC)

Fig. 3 Typ. turn-on /-off energy = f (IC)

Fig. 4 Typ. turn-on /-off energy = f (RG)

Fig. 5 Typ. transfer characteristic

Fig. 6 Typ. gate charge characteristic

19-09-2005 RAA

by SEMIKRON

SKM 400GB124D

Fig. 7 Typ. switching times vs. IC

Fig. 8 Typ. switching times vs. gate resistor RG

Fig. 9 Transient thermal impedance of IGBT

Fig. 10 Transient thermal impedance of FWD

Zthp(j-c) = f (tp); D = tp/tc = tp*f

Zthp(j-c) = f (tp); D = tp/tc = tp*f

Fig. 11 CAL diode forward characteristic

Fig. 12 Typ. CAL diode peak reverse recovery current

19-09-2005 RAA

by SEMIKRON

SKM 400GB124D

Fig. 13 Typ. CAL diode recovered charge

UL Recognized
File no. E 63 532

Dimensions in mm

!"

, 0 6*

!/#

, 0 6; P 0 6*

!/=

, 0 6: P 0 6*

, 0 6*

This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.

19-09-2005 RAA

by SEMIKRON