1 WXXPQG 8

PowerSupply Cookbook
Maxim Power Supply Cookbook

Compiled: January 2013
Available at: http://www.maximintegrated.com/cookbook/
Maxim has developed power supplies for a wide range of applications. Choose the specifications that
most closely meet your needs. Then view a circuit design, complete with schematic diagram and
bill of materials.
Evaluation boards and custom variations of these designs are available to qualified customers. Please
contact your local Maxim sales office to request an assembled circuit.
Contact: powerhelp@design.mxim.com
Also See: Isolated PowerSupply Reference Guides, http://www.maximintegrated.com/isolatedsupplyguide
Page Topology
VIN
VOUT
IOUT
Features
Battery
Charger
18.5V to 28V
2, 3 or 4 Li+ cells
5A
300kHz PWM, external FET
10
Inverting
12V
5V
2A
11
Inverting
3V to 5.5V
12V
0.4A
12
Inverting
12V
48V
0.1A
13
Inverting
12V
72V
0.1A
14
Inverting
3.3V
3.6V
1.2A
16
Inverting
3.3V
5.2V
1A
600kHz PWM, Internal FET, uses

stepdown IC as inverter
17
Inverting
12V
12V
0.25A
19
Inverting
12V
48V
0.1A
300kHz PWM, external FET, transformer
21
Inverting
12V
0.7V
2A
23
Inverting
15V
200V
0.03A
500kHz PWM, external FET, transformer,

MEMS supply
25
Inverting
5V
5.2V
0.5A
27
Inverting
12V
5V
1A
29
Inverting
12V
5V
0.4A
250kHz PWM, external FET, boost with

inverting charge pump
30
Inverting
15V
150V
0.05A
32
Inverting
5V
5.2V
0.5A
34
Inverting
5V
12V
0.2A
36
Inverting
12V
80V
0.12A
38
Inverting
3V to 6V
12V
0.6A
39
Inverting
15V
180V
0.005A 300kHz PWM, external FET, transformer
41
Inverting
7.5V to 13.5V
5V
0.5A
43
Inverting
11V to 14V
64V
0.35A
45
Inverting
48V
60V
0.1A
46
Inverting
12V
12V
0.5A
48
Inverting
15V
15V
0.25A
50
Inverting,
multioutput
12V
65V
24V
0.1A
0.52A

SLIC supply
52
Inverting,
multioutput
5V
72V
24V
0.06A
0.15A

SLIC supply
54
Inverting,
multioutput
5V
24V
72V
+3.3V
0.1A
0.025A isolated SLIC
0.1A
55
Inverting,
multioutput
12V
80V
24V
0.25A
0.12A

SLIC supply
57
Inverting,
multioutput
10V to 25V
62V
25.5V
+38V
0.09A
0.08A
0.09A
58
Inverting,
multioutput
5V
80V
24V
0.12A
0.06A
60
Inverting,
multioutput
5V
24V
100V
0.12A 500kHz PWM, external FET, transformer,

0.075A SLIC supply
62
Inverting,
multioutput
12V
80V
53V
26V
0.1A
0.12A
0.12A
64
Linear
Regulator,
multioutput
3.3V, 6.5V and 12V
5V
2.5V
0.7A
external FET, dual linear reglator, for
0.735A Thomson Jupiter chip set
65
OffLine
120VAC
28V
0.7A
200kHz PWM, external FET, drives 4

Luxeon high brightness LEDs
68
StepDown
3.3V
1.8V
4A
1MHz PWM, external FET
70
StepDown
12V
3.3V
2.5A
72
StepDown
10V to 20V
5V
1A
200kHz PWM, external FET, 95%

efficiency
74
StepDown
5V
1V
6A
200kHz PWM, external FET, Low Voltage

Output
75
StepDown
5V
1.25V
6A
200kHz PWM, external FET, DDR

termination supply sources and sinks
current
77
StepDown
12V
1.0V to 5.5V
12A
200kHz PWM, external FETs, digitally

adjustable
79
StepDown
3.3V
1.5V
6A
81
StepDown
12V
2.5V
20A
200kHz PWM, external FET, DDR VDDQ
82
StepDown
2.5V
1.25V
7A
84
StepDown
2.5V or 1.5V
1.25V or 0.75V
3.5A
550kHz PWM, external FET, DDR VTT
87
StepDown
12V
1.8V
20A
89
StepDown
22V
1.25V
1.5A
550kHz PWM, external FET, DDR VTT
91
StepDown
12V
5V
10A
93
StepDown
3.3V
1.8V
6A
95
StepDown
3.3V
1V
1.5A
97
StepDown
3.3V
1.8V
0.8A
99
StepDown
5V
2.5V
3A
101
StepDown
5V
2.5V
10A
103
StepDown
5V
3.3V
4A
105
StepDown
5V
3.3V
10A
107
StepDown
3.3V
1.8V
3A
100kHz PWM, external FET, low cost

components
109
StepDown
3.3V
2.5V
10A

components
111
StepDown
5V
2.5V
0.5A

components
113
StepDown
5V
3.3V
8A

components
115
StepDown
12V
2.5V
5A

components
117
StepDown
12V
3.3V
0.75A

components
119
StepDown
12V
5V to 12V
2.5A
1MHz PWM, external FET, PWM voltage

adjust, Fan Speed Control
126
StepDown
5V
3.3V
2.2A
128
StepDown
12.6V to 15.4V
3.3V
2A

components
130
StepDown
3.3V
1.25V
12A
550kHz PWM, external FET, DDR
termination
132
StepDown
3V to 3.6V
1.5V
2A
134
StepDown
12V
5V
0.3A
external FET
135
StepDown
3.3V
1.2V
1A
1.4MHz PWM, internal FET
137
StepDown
3.3V
1.8V
2A
139
StepDown
3.3V
1.2V
3A
141
StepDown
5V
1.2V
2.1A
143
StepDown
5V
1.5V
4A
145
StepDown
6.5V to 24V
1.5V
30A
500kHz PWM, external FET, dualphase,

AMD Athlon" XP Mobile power
148
StepDown
3V to 5.5V
1.8V
5A
150
StepDown
5V
0.9V to 1.8V
1.8A
300kHz PWM, external FET, XENPAK

APS Compliant
152
StepDown
12V
6V
3A
154
StepDown
5V
1V or 1.2V
6A
300kHz PWM, external FET, digital select

of 1V or 1.2V
156
StepDown
12V
3.3V
6A

efficiency
158
StepDown
3.3V
1.8V
5A

efficiency
160
StepDown
5V
2.5V
4A

efficiency
162
StepDown
5V
3.3V
4A
1MHz PWM, external FET, 91%

efficiency
164
StepDown
3V to 5.5V
1.5V
2A
1MHz PWM, external FET, ceramic

capacitors
166
StepDown
8V to 20V
2.5V
10A
168
StepDown
12V to 20V
5V
6A

efficiency
170
StepDown
12V
3.3V
6A

efficiency
173
StepDown
12V
2.5V
6A

efficiency
177
StepDown
11V to 23V
3.7V
1.5A

efficiency
179
StepDown
5V
3.18V
0.32A
750kHz PWM, internal FET, USB input
180
StepDown
3V to 3.6V
1.5V
9A
182
StepDown
3.0V to 5.5V
1.8V
3A
184
StepDown
3V to 5.5V
1.8V
3A
186
StepDown
3.3V
1.8V
2A
188
StepDown
12V
1.8V
25A
190
StepDown
3V to 5.5V
1.05V
3.5A
192
StepDown
7V to 13.2V
1.9V
2.5A
194
StepDown
5V
1.2V
3.5A
196
StepDown
5V
1.5V
4A
198
StepDown
3.3V
1.8V
10A
200
StepDown
3.3V
1.2V
7A
202
StepDown
3V to 5.5V
1.5V
2A
204
StepDown
5V
1.8V
6.5A
206
StepDown
5V
1.2V
6A
208
StepDown
18V to 24V
12V
2A
210
StepDown
18V to 20V
12V
4A
212
StepDown
19V
5V
6A
214
StepDown
12V
5V
5A
216
StepDown
8V to 22V
3.3V
1.2A
218
StepDown
12V
3.3V
4A
220
StepDown
9V to 20V
2.5V
6A
222
StepDown
12V
1.5V
5A
224
StepDown
3V to 5.5V
1.2V
6A
226
StepDown
5V
1.8V
10A
228
StepDown
12V to 20V
1.5V
4A
230
StepDown
12V to 20V
1.2V
4A
232
StepDown
5.5V to 24V
0.9V
3A
234
StepDown
3V to 5.5V
0.9V
3A
236
StepDown
5V
2.5V
1.5A
238
StepDown
5V
1.05V
3A
241
StepDown
9V to 19V
1.0V/1.2V
4.5A
100kHz PWM, external FET, dynamic

voltage shift
250
StepDown
12V
1.2V
8.5A
253
StepDown
12V
1.8V
7.2A
256
StepDown
10V to 20V
1.05V
4.5A
259
StepDown,
multioutput
24V
3.3V
5V
7A
1A
262
StepDown,
multioutput
9V to 16V
3.3V
2.5V
5V
12V
1.8A
1.4A
0.3A
0.5A
265
StepDown,
multioutput
10V to 18V
3.3V
2.5V
5V
5V
1.3A
0.9A
0.35A
0.18A
268
StepDown,
multioutput
24V
7V
5V
5V
0.5A
1A
0.1A
270
StepDown,
multioutput
9V to 16V
3.3V
1.8V
5V
12V
12V
1.5A
1A
0.5A
0.4A
0.1A
273
StepDown,
multioutput
24V
5.15V
7V
5V
0.8A
0.4A
0.08A
277
StepDown,
multioutput
8V to 18V
3.3V
2.5V
5V
1A
1A
0.1A
281
StepDown,
multioutput
12V
3.3V
2.5V
5V
1.5A
0.13A
0.35A
283
StepDown,
multioutput
5V to 28V
3.3V
8V
5V
2.5V
1A
0.05A
0.05A
0.01A
286
StepDown,
multioutput
5V
3.1V
5V
12V
0.4A
0.1A
0.03A
289
StepDown,
multioutput
6V and 3.3V
1.24V
2.5V
1.8V
1.5V
3A
1.4A
0.17A
0.14A
200kHz PWM, external FET, 1 DCDC

plus 3 LDOs
293
StepDown,
multioutput
12V
1.25V
1.25V
8A
8A
700kHz PWM, external FETs, dual out of

phase
295
StepDown,
multioutput
7V to 20V
1.8V
3.3V
3A
2A
1.2MHz PWM, external FET, dual out of

phase
297
StepDown,
multioutput
10.8V to 13.2V
1.8V
3.3V
0.8A
1.1A

phase, ceramic capacitors
299
StepDown,
multioutput
2.7V to 5.5V
1.8V
2.5V
0.4A
0.1A
750kHz PWM, internal FET
300
StepDown,
multioutput
6V
1.8V
2.5V
3A
3A

phase, ceramic capacitors
302
StepDown,
multioutput
10V to 14V
3.3V
5V
7A
0.15A
304
StepDown,
multioutput
9V to 12V
6V
1.5V
1.5A
3A
600kHz PWM, external FET, dual out of

phase
306
StepDown,
multioutput
9V to 12V
3.4V
2.6V
1.75A
3A
308
StepDown,
multioutput
6V to 14V
3.3V
1.8V
5V
48V
0.35A
0.35A
0.35A
0.1A
312
StepUp
3.3V to 5.5V
12V
2.3A
314
StepUp
11V to 14.3V
16V
4.4A

efficient
315
StepUp
48V
5V
4A
200kHz PWM, external FET, no

transformer, unisolated
316
StepUp
12V
18.75V
3.1A
317
StepUp
13.5V to 26.4V
48V
0.2A
319
StepUp,
multioutput
18V to 24V
+5V
+3.3V
6V
24V
85V
0.35A 300kHz PWM, external FET, no

0.15A transformer
0.006A
0.03A
0.001A
321
StepUp/Down 2.5V to 6V
3.3V
1.5A
250kHz PWM, external FET, SEPIC
322
StepUp/Down 8V to 20V
12V
2.5A
500kHz PWM, external FET, SEPIC
323
StepUp/Down 2.7V to 5.5V
3.8V
0.8A
300kHz PWM, internal FET, single

inductor, buckboost
5A 2, 3 , or 4-cell Li-Ion Battery Charger

18.5V to 28V
VIN
D1
CMSH5-40
C2
0.22uF
13 VH
C3
0.22uF
35V
15 DCIN
CSSN 1
VREF
R8
100k
16 VL
C1
2.2uF
JU1
C4
47nF
C9
22uF
35V
R1
0.02
1W
P1
FDS
6675
D2
CMSH5-40
C15
0.1uF
5 CCI
BATT 10
C14
0.1uF
CCV
C13
1nF
REF
VREF
C16
1uF
C6
0.1uF
VADJ
R3
100k
8
R4
100k
IOUT
GND
12
C10
22uF
35V
R2
0.02
1W
BATT+
C5
68uF
25V
GND
CSB 5
C5
47nF 4
1873T_5A
RWY
9/05/05
L1
10uH
ICHG/EN
3 CCS
R5
10k
C7
0.1uF
R7
4.7
C8
0.1uF
U1
MAX1873T
SYSTEM
LOAD
R6
4.7
EXT 14
6
R9
100k
CSSP 2
IOUT
BILL OF MATERIALS
18.5V to 28V Input
16.8V @ 5A Output
9/05/05
1873T_5A
DESIGNATION
C1
QTY
1
C2,C3
C4,C5
C6,C7,C8,C14,
C15
C9,C10
C11
C13
C16
1
1
D1,D2
L1
P1
R1,R2
R3,R4,R8,R9
R5
R6,R7
U1
4
1
2
1
DESCRIPTION
2.2uF 10V X5R ceramic capacitor ((0805)
Taiyo Yuden LMK212BJ225MG
0.22uF 35V ceramic capacitor (0805)
Taiyo Yuden GMK212BJ224KG
47nF 50V X7R ceramic capacitor (0805)
Taiyo Yuden UMK212BJ473KG
0.1uF 50V X7R ceramic capacitor (0805)
Taiyo Yuden UMK212BJ104KG
22uF 35V tantalum capacitor (E)
AVX TPSE226K035R0200
68uF 25V tantalum capacitor (E)
AVX TPSE686M025R0125
1nF ceramic capacitor (0603)
1uF 10V X7R ceramic capacitor (0805)
Taiyo Yuden LMK212BJ105KG
5A 40V Schottky diode (SMC)
Central Semi CMSH5-40
10uH 5.4A Power inductor (12.3 x 12.3 x 8)
Sumida CDRH127-100
20m Ohm -30V P-ch MOSFET (SO-8)
Fairchild FDS6675
0.02 Ohm 1W 5% resistor (2512)
Dale
100k Ohm 5% resistor (0805)
4.7 Ohm 1% resistor (0603)
MAX1873TEEE (16-QSOP)
CIRCUIT ID
Input (V)
Output (V)
Output (A)
CCOMP (F)
CIN (F)
COUT (F)
CFB (pF)
R1(k) (1%)
R2(k) (1%)
RCOMP (k)
RCS ()
RFREQ (k)
D1
L1 (H)
P1
12
-5
2
0.047
3x10
2 x 100
390
40.2
10
8.2
0.02
150
CMSH5-40
10
FDS6685
3 to 5.5
-12
0.4
0.22
3x22
2 x 47
1200
95.3
10
10
0.02
150
CMSH5-40
10
FDS6375
12
-48
0.1
0.068
10
47
1800
383
10
150
0.05
150
CMR1U-02
47
IRFR5410
12
-72
0.1
0.1
10
33
1800
576
10
1800
0.05
150
CMR1U-02
82
IRFR5410
Component List for Application Circuits
CIRCUIT ID
Input (V)
Output (V)
Output (A)
CCOMP (F)
CIN (F)
COUT (F)
CFB (pF)
R1(k) (1%)
R2(k) (1%)
RCOMP (k)
RCS ()
RFREQ (k)
D1
L1 (H)
P1
12
-5
2
0.047
3x10
2 x 100
390
40.2
10
8.2
0.02
150
CMSH5-40
10
FDS6685
3 to 5.5
-12
0.4
0.22
3x22
2 x 47
1200
95.3
10
10
0.02
150
CMSH5-40
10
FDS6375
12
-48
0.1
0.068
10
47
1800
383
10
150
0.05
150
CMR1U-02
47
IRFR5410
12
-72
0.1
0.1
10
33
1800
576
10
1800
0.05
150
CMR1U-02
82
IRFR5410
CIRCUIT ID
Input (V)
Output (V)
Output (A)
CCOMP (F)
CIN (F)
COUT (F)
CFB (pF)
R1(k) (1%)
R2(k) (1%)
RCOMP (k)
RCS ()
RFREQ (k)
D1
L1 (H)
P1
12
-5
2
0.047
3x10
2 x 100
390
40.2
10
8.2
0.02
150
CMSH5-40
10
FDS6685
3 to 5.5
-12
0.4
0.22
3x22
2 x 47
1200
95.3
10
10
0.02
150
CMSH5-40
10
FDS6375
12
-48
0.1
0.068
10
47
1800
383
10
150
0.05
150
CMR1U-02
47
IRFR5410
12
-72
0.1
0.1
10
33
1800
576
10
1800
0.05
150
CMR1U-02
82
IRFR5410
CIRCUIT ID
Input (V)
Output (V)
Output (A)
CCOMP (F)
CIN (F)
COUT (F)
CFB (pF)
R1(k) (1%)
R2(k) (1%)
RCOMP (k)
RCS ()
RFREQ (k)
D1
L1 (H)
P1
12
-5
2
0.047
3x10
2 x 100
390
40.2
10
8.2
0.02
150
CMSH5-40
10
FDS6685
3 to 5.5
-12
0.4
0.22
3x22
2 x 47
1200
95.3
10
10
0.02
150
CMSH5-40
10
FDS6375
12
-48
0.1
0.068
10
47
1800
383
10
150
0.05
150
CMR1U-02
47
IRFR5410
12
-72
0.1
0.1
10
33
1800
576
10
1800
0.05
150
CMR1U-02
82
IRFR5410
10G Network
+3V to +3.6V
INPUT
C5
680uF
6V
1
C1
0.47uF
2
C2
56nF
VL
EXT
U1
MAX1846
1846-3v6
RWY
08/24/01
CS
P1
FDS6375
32mOhm
FREQ
L1
6.8uH
UP4-6R8
10mOhm
R4
100
C6
7 1000pF
PGND
R6
29.4k
1%
6
FB
COMP
C3
220pF
C4
0.1uF
Vin
3.5154
3.3033
3.0876
10
V+
R1
150k
(300kHz)
R2
39k
R3
22k
REF
GND
5
D1
EC31
QS03L
R5
0.020
0.5W
R7
10.0k
1%
+3V to -3.6V @ 1.2A

Iin
1.642
1.761
1.905
Vout
-3.6159
-3.6159
-3.6158
Iout
1.2044
1.2044
1.2044
Efficiency
0.754
0.749
0.740
L2
10uH
CDRH
6D28-100
C7
680uF
6V
C8
22uF
10V
-3.6V
@ 1.2A
BILL OF MATERIALS
3V to 3.6V Input
-3.6V @ 1.2A Output
08/24/01
1846-3v6
DESIGNATION
C1
C2
C3
C4
C5,C7
QTY
1
1
1
1
2
C6
C8
1
1
D1
L1
L2
P1
R1
R2
R3
R4
R5
1
1
1
1
1
R6
R7
U1
1
1
1
DESCRIPTION
0.47uF ceramic capacitor (0805)
220pF ceramic capacitor (0805)
680uF 6V organic semiconductor capacitor
Sanyo OS-CON 6SP680M
22nF 10V ceramic capacitor (1812)
Taiyo Yuden LMK432BJ226MN
3A 30V Schottky diode
Nihon EC31QS03L
6.8uH 5A Power Inductor
Coiltronics UP4-6R8
10uH 1.2A Inductor
Sumida CDRH6D28-100
32m Ohm -20V P-FET (SO-8)
Fairchild FDS6375
100 Ohm 5% resistor (0805)
20m Ohm 1% 0.5W resistor (2010)
Dale WSL-2010-R050F
29.4k Ohm 1% resistor (0805)
MAX1847EEE (16-QSOP)
3.3V
INPUT
C1
33uF
10V
L1
22uH
CDRH6D38-220
IN
AIN
C2
0.1uF
C3
0.1uF
LX
U1
MAX1685
CVH
PGND
SHDN
AGND
ILIM/SS
BOOT
CVL
C5
1uF
C8
33uF
10V
C9
0.1uF
R1
31.6k
STBY
C4
10nF
D1
EC10
QS03L
FB
SYNC/PWM CC
C6
22nF
REF
R2
10k
C7
0.1uF
-5.2V @ 1A
1685-5
RWY
6/7/01
Notes:
C1,C2 Sanyo 10TPA33M
D1 Nihon
L1 Sumida
3.3V into -5.2V @ 1A
Server
+12V
INPUT
1
C1
0.47uF
2
R2
10k
C2
27nF
VL
EXT
MAX1846
3
C3
220pF
4
CS
COMP
PGND
REF
FB
GND
5
P1
Si9435DY
55mOhm
FREQ
R1
150k
(300kHz)
C4
0.1uF
1846-12b
RWY
08/10/01
10
V+
C5
10uF
25V
CER
L1
100uH
DS5022P
-104
D1
EP05
Q03L
R3
0.1
0.25W
R4
97.6k
1%
R5
10.0k
1%
+12V to -12V @ 250mA
C6
10uF
25V
CER
-12V @
250mA
BILL OF MATERIALS
11.4V to 12.6V Input
-12V @ 250mA Output
08/10/01
1846-12b
DESIGNATION
C1
C2
C3
C4
C5,C6
QTY
1
1
1
1
2
C6
D1
1
1
L1
P1
R1
R2
R3
R4
R5
U1
1
1
1
1
1
1
DESCRIPTION
10uF 25V ceramic capacitor (1812)
Taiyo Yuden TMK432BJ106MM
500mA 30V Schottky diode
Nihon EP05Q03L
100uH 1A Inductor
Coilcraft DS5022P-104
55m Ohm 30V P-channel MOSFET (SO-8)
Siliconix Si9435DY
100m Ohm 1% 0.25W resistor (1210)
MAX1846EUB (10-uMAX)
MAX1847 transformer application

T1
1:4
VP1-0190
Lpri = 12.2uH
Rpri = 73mOhm
+12V
INPUT
C7
10uF
25V
CER
2
C1
0.47uF
R1
150k
(300kHz)
R2
68k
C2
22nF
U1
MAX1847
FREQ
13
11,12
R3
22k
R4
100
C5
1nF
PGND
1847-48t
RWY
09/17/01
CS
COMP
C3
220pF
C4
0.1uF
Vin
10.795
11.999
13.202
16
1
8
15
SYNC POL SHDN IN
14
EXT
VL
8,9
REF
FB
GND
N.C.
7,9 10,11
12
10
6,7
3,5
D1
2,4
CMR1U-02
1
N1
IRLL
2705
0.05
Ohm
R8
470
C9
39uF
100V
MV-AX
0.39Ohm
-48V @
100mA
C8
100pF
100V
R5
0.05
0.5W
R6
383k
1%
6
C6
1nF
R7
10.0k
1%
+12V to -48V @ 100mA

Iin
0.499
0.450
0.409
Vout
-47.673
-47.672
-47.671
Iout
-0.100
-0.100
-0.100
Efficiency
0.885
0.883
0.883
<200mVpp
BILL OF MATERIALS
-48V @ 100mA Output
09/18/01
1847-48t
DESIGNATION
C1
C2
C3
C4
C5,C6
C7
QTY
1
1
1
1
2
1
C8
C9
1
1
D1
N1
R1
R2
R3
R4
R5
1
1
1
1
1
R6
R7
R8
T1
1
1
1
1
U1
DESCRIPTION
1nF 6V ceramic capacitor (0805)
100pF 100V ceramic capacitor (0805)
39uF 100V aluminum electrolytic capacitor
Sanyo 100MV39AX
1A 200V Ultra-fast recovery diode
Central Semi CMR1U-02
50m Ohm 55V N-FET (SOT-223)
IRLL2705
Dale WSL-2010-R050F
470 Ohm 0.25W resistor (1210)
1:4 Transformer
Coiltronics VP1-0190
10.8V to 13.2V
VIN
R2
22k
15
16
1
R18
100k
P2
FDN360P
2
C1
0.47uF
R4
150k
(300kHz)
R3
68k
EXT
L1
4.7uH
R15 FDV
100 0630
13
CS
POL
VL
PGND
SHDN
FB
4 COMP
12
R5
0.022
C21 0.5W
1nF
C8
1000uF
2.5V
TPB
-0.7V@2A
VOUT
C7
22uF
6V
X5R
R6
5.62k
FREQ
6
C10
6.8nF
C5
6.8nF
C9
0.1uF
14
U1
MAX1847
8
SHDN
IN
SYNC
C2
C3
4.7uF
470uF
25V
25V
X5R
MV-AX
P1
D1
FDS
EC21QS04
9435A
R7
10.0k
REF
GND
10,11
N1
FDN361AN
R19
100k
1847-0a7
RWY
2/24/05
Vin
12.01
10.77
12.00
13.23
20MHz BW
Iin
0.0009
0.26
0.25
0.23
Vout
-0.703
-0.696
-0.696
-0.696
~40mVpp
Iout
0
2.04
2.11
2.08
Note: 1) C3 is not necessary if there is sufficient bulk bypass capacitance close by.
2) N1 and P2 are included to force the output to 0V in shutdown.
Efficiency
0.507
0.490
0.476
BILL OF MATERIALS
-0.7V @ 2A Output
2/24/05
1847-0a7
DESIGNATION
C1
C2
QTY
1
1
C3
C5
C7
1
1
C8
C9
C10
C21
D1
1
1
1
1
L1
N1
P1
P2
R2
R3
R4
R5
R6
R7
R15
R18,R19
U1
1
1
1
1
1
1
1
2
1
DESCRIPTION
Taiyo Yuden TMK325BJ475MN
Sanyo 25MV470AX
6.8nF ceramic capacitor (0805)
22uF 6V X5R ceramic capacitor
Taiyo Yuden JMK325BJ226MM
1000uF 2.5V polymer capacitor
Sanyo POSCAP 2R5TPB1000M
Nihon EC21QS04
4.7uH 3.3A Inductor
Toko FDV0630-4R7
0.1 Ohm 20V N-ch MOSFET (SOT-23)
Fairchild FDN361AN
Fairchild FDS9435A
30m Ohm -30V P-ch MOSFET (SOT-23)
Fairchild FDN360P
0.022 Ohm 0.5W 5% resistor (1812)
MAX1856 15VIN to -200Vout @0.03A

Table 1: BILL OF MATERIALS
DESIGNATION
C1
QTY
1
C3,C4
C6
C8
C9
1
1
C10,C13
C11
C12
D2
D1, D3
N1
2
1
R2
R3
R4
R5
R6
1
1
1
1
1
R7
R8
R9
R10
R11
R12
T1
JU1
U1
1
1
1
1
1
1
1
1
1
DESCRIPTION
100 mF 250V electrolytic capacitor
Sanyo 250MV100FAZ (2x in series)
10 mF 25V X5R ceramic capacitor (1812)
Taiyo Yuden TMK432BJ106KM
10 pF 200V capacitor
(through hole connect 2 in parallell)
1000pF 50V ceramic capacitor
1 mF X7R ceramic capacitor (1206)
Taiyo Yuden TMK316BJ105KL
1000 pF, NP0 ceramic capacitors (0805)
AVX 0805-5A-102-JAT-2A
1 mF, X7R ceramic capacitor (0805)
2.2 mF, 10V ceramic capacitor (1206)
MURATA GRM42-6X7R225K010AD
8A, 600V Ultra-fast recovery diode
International Rectifier HFA08TB60S
OPEN
N-channel MOSFETs
International Rectifier IRLL2705
500 W, 5% resistor ( through hole)
SHORT
11 W, 5% resistor ( 0805/0603)
10 W, 5% resistor ( 1206)
0.033 W, 1% sense resistor (2010)
DALE 0.5W
100 W, 5% resistor (0805)
100 kW, 1% resistor (0805)
4.7 kW, 1% resistor (0805)
750k W, 1% resistor (0805)
OPEN
100 kW, 5% resistor (0805)
Coiltronics transformer custom wound
2-pin header
MAX1856EUB (10 mMAX)
Schematic:
6/6/01
+15V to -200V @30mA. This uses the MAX1856 and a transfomer (that will need
1 to 8 turns ratio) to make a flyback
1
+15V
R5
10
C3
10uF
25V
C4
10uF
25V
T1: Custom wound

Coiltronics SG3, EFD15 core
Lpri = 11uH,Turns ratio= 1:8
pri =AWG # 30 quadfilar; 9 turns
sec=AWG # 34 two layers; 72 turns total 12 11
N1 IRLL2705
0.04W
9
8
55V
VCC
EXT
R7
Jumper
10
6
SYNC/
100
JU1
CS+
SHDN\
C10
R12
1000 pF
100k
7
PGND
U1
MAX1856
1
C9
1uF
C11
1uF
C12
2.2uF
LDO
FB
REF
R4
11
C8
1000 pF
R6
0.033
5
R9
4.7k
3 1%
GND
FREQ
R8
2
100k
freq=500kHz
R10
750k
1%
C13
1000 pF
to
REF pin
C1
100uF
250V (2x
in series)
T1
Secondary
7
6 8
C6
20pF
R2
500
VOUT1
D2 8A 600V - 200V
Ultrafast @ 30mA
Rectifier
HFA08TB60S
Notes:
T1: Coiltronics or equivalent. The general specs are: Primary L = 11uH
critical), Primary current rating = >2.5Amps, Turns ratio
N1: Any logic-level (Ron rated at 5V) N-FET with similar ratings may
substituted.
4.5V to 5.5V
VIN
C13
22uF
6V
X5R
1
C11
0.47uF
2
R2
6.8k
C15
22nF
10
V+
VL
EXT
U2
MAX1846
L2
22uH
DO3316P
85mOhm
R16
100
C22
7 1000pF
PGND
R13
42.2k
1%
5
FB
COMP
C16
220pF
C19
0.1uF
CS
P2
FDS6685
35mOhm
FREQ
R11
150k
(300kHz)
3
R9
22k
REF
GND
6
D2
EC21
QS03L
-5.2V @ 0.5A
VOUT
C18
22uF
6V
X5R
R12
0.05
0.25W
R14
10.0k
1%
1846-5h
RWY
1/28/04
Vin
5.00
4.47
5.00
5.53
20MHz BW
Iin
0.0018
0.71
0.63
0.56
Vout
-5.24
-5.24
-5.24
-5.24
100mVpp
Iout
0
0.5
0.5
0.5
Efficiency
0.826
0.832
0.846
BILL OF MATERIALS
4.5V to 5.5V Input
-5.2V @ 0.5A Output
1/28/04
1846-5h
DESIGNATION
C11
C15
C16
C19
C13,C18
QTY
1
1
1
1
2
C22
D2
1
1
L2
P2
R11
R10
R9
R16
R12
R13
R14
U1
1
1
1
1
1
1
1
1
DESCRIPTION
Nihon EC21QS03L
22uH 2.6A Inductor
Coilcraft DO3316P-223
Fairchild FDS6685
0.05 Ohm 0.25W 5% resistor (1210)
+11.4V to +12.6V
INPUT
C4
10uF
25V
1
C1
0.47uF
2
R2
15k
10
V+
VL
EXT
U1
MAX1846
PGND
4
C3
0.1uF
COMP
C2
33nF
1846-5g
RWY
12/12/01
CS
FB
REF
GND
5
P1
FDS6685
35mOhm
FREQ
R1
150k
(300kHz)
3
R3
47k
L1
22uH
UP3B-220
49mOhm
R4
100
C5
1nF
D1
EC31
QS03L
R5
0.033
0.5W
R6
40.2k
1%
6
C6
330pF
R7
10.0k
1%
+11.4V to +12.6V into -5V @ 1A
-5V @ 1A
C7
100uF
10V
POSCAP
BILL OF MATERIALS
-5V @ 1A Output
12/12/01
1846-5g
DESIGNATION
C1
C2
C3
C4
QTY
1
1
1
1
C5
C6
C7
1
1
1
D1
L1
P1
R1
R2
R3
R4
R5
R6
R7
U1
1
1
1
1
1
1
1
1
DESCRIPTION
100uF 10V tantalum capacitor
Sanyo POSCAP 10TPB100M
3.1A 30V Schottky diode
Nihon EC31QS03L
22uH 3A Inductor
Coiltronics UP3B-220
Fairchild FDS6685
01/05/00 +12V to -5V at 400mA . This uses the MAX1856, an inductor, and a capacitor to make a
charge pump inverter.
D1 2A 40V
EC21QS04
+12V
INPUT
C1
10uF
25V
L1
6uH
CDRH
6D28-6R0
9
VCC
10 SYNC/
SHDN\
C2
0.1uF
EXT
R2
0.05
C3
1uF
C4
0.22uF
R3
20k
U1PGND
MAX1856 5
FB
LDO
REF
FREQ
2
R1
200k
GND
C6
22uF
10V
C5
22uF
10V
- 5V OUT
@ 400mA
Q1 Si9410DY
0.05 Ohms
30V
CS+
D2 1A 40V
EC21QS04
R4
5k
C7
1000pF
to
REF pin
Notes:
Q1: Any logic-level (Ron rated at 5V) N-FET with similar ratings may be
substituted.
+13.5V to
+16.5V
VIN
C5
10uF
25V
1
15
IN
POL
EXT
R1
1M
2
C1
0.47uF
U1
MAX1847
SHDN
SYNC
16
R2
100k
C2
56nF
3
R3
150k
R4 (300kHz)
7.5k
4
Vin
16.843
15.03
13.32
20MHz BW
D1
10MQ
100N
14
P1 1,2,3,4 8
IRFR
6215
0.3 Ohm
SHDN
SYNC
FREQ
COMP
C7
470pF
D2
CMR1U
-04
7,5
T1
1:2
9,10,11,12
Lpri=6.1uH
13
CS
VP4-0075
R6
R7
100
0.02
C6
1W
12 1nF
PGND
R8
402k
1%
6
FB
C3
150pF
C4
0.1uF
1847-150
RWY
12/19/01
VL
R5
68k
-150V @
50mA
C8
0.1uF
200V
R9
3.32k
1%
REF
GND
10,11
+13.5V to +16.5V into -150V @ 50mA

Iin
0.660
0.742
0.832
Vout
-150.8
-150.8
-150.8
1.95Vpp
Iout
0.05997
0.05997
0.05997
Efficiency
0.814
0.811
0.816
BILL OF MATERIALS
-150V @ 50mA Output
12/19/01
1847-180
DESIGNATION
C1
C2
C3
C4
C5
QTY
1
1
1
1
1
C6
C7
C8
1
1
1
D1
D2
P1
R1
R2
R3
R4
R5
R6
R7
R8
R9
T1
1
1
1
1
1
1
1
1
1
1
U1
DESCRIPTION
0.1uF 200V PEN film capacitor (2420)
Panasonic ECWU2104JC9
International Rectifier 10MQ100N
1A 400V Ultrafast recovery diode
0.3 Ohm -150V P-ch MOSFET (D-PAK)
International Rectifier IRFR6215
1M Ohm 5% resistor (0603)
20m Ohm 1% 1W resistor (2512)
1:2 Power transformer Lpri = 6.1uH
4.5V to 5.5V
VIN
C13
22uF
6V
X5R
1
C11
0.47uF
2
R2
6.8k
C15
22nF
10
V+
VL
EXT
U2
MAX1846
L2
22uH
DO3316P
85mOhm
R16
100
C22
7 1000pF
PGND
R13
42.2k
1%
5
FB
COMP
C16
220pF
C19
0.1uF
CS
P2
FDS6685
35mOhm
FREQ
R11
150k
(300kHz)
3
R9
22k
REF
GND
6
D2
EC21
QS03L
-5.2V @ 0.5A
VOUT
C18
22uF
6V
X5R
R12
0.05
0.25W
R14
10.0k
1%
1846-5h
RWY
1/28/04
Vin
5.00
4.47
5.00
5.53
20MHz BW
Iin
0.0018
0.71
0.63
0.56
Vout
-5.24
-5.24
-5.24
-5.24
100mVpp
Iout
0
0.5
0.5
0.5
Efficiency
0.826
0.832
0.846
BILL OF MATERIALS
4.5V to 5.5V Input
-5.2V @ 0.5A Output
1/28/04
1846-5h
DESIGNATION
C11
C15
C16
C19
C13,C18
QTY
1
1
1
1
2
C22
D2
1
1
L2
P2
R11
R10
R9
R16
R12
R13
R14
U1
1
1
1
1
1
1
1
1
DESCRIPTION
Nihon EC21QS03L
22uH 2.6A Inductor
Fairchild FDS6685
0.05 Ohm 0.25W 5% resistor (1210)
4.5V to 5.5V
VIN
C12
10uF
10V
X5R
R9
22k
C11
0.47uF
1 VL
EXT
2 FREQ
R11
75k
(500kHz)
R10
27k
C15
68nF
10
IN
CS 8
U2
MAX1846
3
PGND
COMP
P2
FDN
304P
R16
100
L2
15uH
C17
47uF
16V
TQC
R12
C22 0.05
1nF
C16
100pF
FB
4
C19
0.1uF
REF
GND
6
D2
EC10
QS03L
-12V@200mA
VOUT
C18
1uF
16V
X5R
R13
97.6k
5
C20
1nF
R14
10.0k
1846-12d
RWY
8/04/04
Vin
5.01
4.48
5.00
5.51
Iin
0.0049
0.6595
0.5902
0.5358
Vout
-12.16
-12.15
-12.15
-12.15
70mVpp
Iout
0
0.203
0.203
0.203
Efficiency
0.835
0.836
0.835
BILL OF MATERIALS
4.5V to 5.5V Input
-12V @ 200mA Output
8/04/04
1846-12d
DESIGNATION
C11
C12
QTY
1
1
C15
C16
C17
1
1
1
C18
C19
C20,C22
D1
1
2
1
L1
P1
R9
R10
R11
R12
R13
R14
R16
U1
1
1
1
1
1
1
1
1
DESCRIPTION
47uF 16V 70mOhm polymer capacitor
Sanyo 16TQC47M
1uF ceramic capacitor (0805)
Taiyo Yuden EMK212BJ105MG
Nihon EC10QS03L
15uH 1.8A Inductor
Coilcraft DT3316P-153
50m Ohm -30V P-ch MOSFET (SOT-23)
Fairchild FDN304P
0.05 Ohm 0.25W 5% resistor (1206)
2/15/02 - RWY
+12V to -24V at 60mA, -80V at 120mA . This uses the MAX1856 and a transfomer (that
will need about a 1:2:2:2.7 turns ratio) to make a flyback converter.
1
+12V
T1: Lpri = 16.7uH

1:2:2:2.7
DTPH1000-0002
C8
470pF
50V
R4
10
R5
10
12 11
C9
1uF
25V
C3,C4
2x 10uF
25V
VCC
C10
EXT
10 SYNC/
SHDN\
CS+
PGND
U1
MAX1856
1
C11
1uF
10V
C12
2.2uF
FB
LDO
REF
GND
FREQ
2
N1
IRLL2705
0.05 Ohms
55V
R8
150k
61000pF
R7
100
R6
0.033
C13
1000pF
R9
5.1k
1%
to MAX1856
REF pin
C1
22uF
100V
MV-AX
T1
Secondary
7
6 8
5 9
D2
CMR1U-02
C2
100uF
35V
MV-AX
4
R1
200
0.5W
R11
787k
1%
D1
CMR1U-04
C5
100pF
200V
R10
374k
1%
- 80V OUT
@ 120mA
-24V
@ 60mA
R13
24.9k
Notes:
T1: DT Magnetics DTPH1000-0002 or equivalent. The general specs are:
Primary L = about 16.7uH (not critical), Primary current rating = >3Amps, Turns ratio 1:2:2:2.7.
Q1: Any logic-level (Ron rated at 5V) N-FET with similar ratings may be substituted.
C5: Compensates for output capacitor ESR zero, if necessary.
R13: Controls leakage energy when -24V output has no load, if necessary.
Vin
12.049
12.032
12.000
10.777
12.001
13.228
Iin
0.005
0.178
0.950
1.209
1.089
0.994
VOUT1
-79.72
-79.61
-78.41
-78.37
-78.45
-78.52
IOUT1
0
0
0.1203
0.1203
0.1203
0.1203
VOUT2
-23.836
-22.926
-23.874
-23.507
-23.533
-23.558
IOUT2
0
0.06031
0
0.06033
0.06033
0.06033
Efficiency
0.832
0.831
0.826
BILL OF MATERIALS
-24V @ 60mA, -80V @ 120mA Output
2/15/02
1856-80
DESIGNATION
C1
QTY
1
C2
C3,C4
C5
C6,C7
C8
C9
1
0
1
1
C10,C13
C11
2
1
C12
D1
D2
N1
R1
R2,R3
R4,R5
R6
1
0
2
1
R7
R8
R9
R10
R11
R13
T1
1
1
1
1
1
1
1
U1
DESCRIPTION
Sanyo 100MV22AX
Sanyo 35MV100AX
Not installed
Taiyo Yuden TMK316BJ105ML
3.8A 55V N-channel MOSFET (SOT-223)
Not installed
Dale WSL 2010 0.033 1%
1:2:2:2.7 Power Transformer Lpri = 16.7uH
DT Magnetics DTPH1000-0002
+3V to +6V
INPUT
1
2
VL
C1
0.47uF
15
V+
POL
C4
22uF
10V
(3x)
EXT
14
VL
MAX1847
SYNC
3
JU1
SHDN
R1
100k
4
R2
100k
SYNC
CS
PGND
R3
130k
(300kHz)
FB
6
C2
0.22uF
C3
0.1uF
RWY
05/11/01
COMP
11
10
L1
10uH
CDRH
127-100
21mOhm
R5
0.02
1W
R6
95.3k
1%
R7
10.0k
1%
R4
1.8k
7
REF
12
SHDN
FREQ
P1
IRF
7700
24mOhm
REF
GND
8,9
+3V to -12V @ 0.6A
D1
HRF
502A
C5
10uF
25V
(2x)
-12V @
0.6A
+13.5V to
+16.5V
VIN
C5
4.7uF
25V
1
R1
1M
2
C1
0.47uF
8
SYNC
16
C2
39nF
3
R3
150k
R4 (300kHz)
33k
4
Vin
16.67
15.05
13.33
D1
10MQ
100N
D2
CMR1U
EXT
-04
P1
4
7
2
IRFR
1,12 8,10
9120
9,11
C8
0.6 Ohm 3,5
0.1uF
T1
R6
200V
6
1:2
13 100
Lpri=48.8uH
CS
VP1-0190
14
VL
SHDN
PGND
FREQ
FB
COMP
L1
330uH
1008PS
-334M
-180V @
5mA
C9
0.1uF
200V
R7
0.1
C6
1nF
SYNC
12
R8
402k
1%
6
C7
470pF
C3
39pF
C4
0.1uF
1847-180
RWY
12/19/01
POL
U1
MAX1847
SHDN
R2
100k
15
IN
R5
68k
R9
2.74k
1%
REF
GND
10,11
+13.5V to +16.5V into -180V @ 5mA

Iin
0.09311
0.1040
0.1153
Vout
-182.6
-182.6
-182.6
56mVpp
Iout
0.006066
0.006066
0.006066
Efficiency
0.714
0.708
0.721
BILL OF MATERIALS
-180V @ 5mA Output
12/19/01
1847-180
DESIGNATION
C1
C2
C3
C4
C5
QTY
1
1
1
1
1
C6
C7
C8,C9
1
1
2
D1
D2
L1
P1
R1
R2
R3
R4
R5
R6
R7
R8
R9
T1
1
1
1
1
1
1
1
1
1
1
U1
DESCRIPTION
0.22F ceramic capacitor (0805)
0.1uF 200V PEN film capacitor (2420)
Panasonic ECWU2104JC9
International Rectifier 10MQ100N
330uH Inductor
Coilcraft 1008PS-334M
0.6 Ohm -100V P-ch MOSFET (D-PAK)
International Rectifier IRFR9120
0.1 Ohm 1% 0.5W resistor (2010)
1:2 Power transformer Lpri = 48.8uH
+7.5V to
+13.5V
INPUT
C2
4.7uF
25V
1
2
VL
C1
0.47uF
R2
47k
15
V+
POL
EXT
14
VL
L1
47uH
CDRH
127-470
MAX1847
SYNC
16
JU1
SHDN
R?
100k
8
R?
100k
R3
1.2k
PGND
FREQ
R4
150k
(300kHz)
FB
4
COMP
REF
C9
0.1uF
1847-5
RWY
02/11/02
D1
EC21
QS03L
C8
10uF
10V
-5V @
0.5A
13
SHDN
12
R5
0.05
0.5W
R6
40.2k
1%
R7
10.0k
1%
C6
2.2nF
C5
68nF
Vin
10.508
7.486
10.509
13.529
CS
SYNC
P1
FDS
6685
35mOhm
REF
GND
10,11
+7.5V to +13.5V into -5V @ 0.5A

Iin
0.001
0.387
0.280
0.223
Vout
-5.0058
-5.0029
-5.0032
-5.0037
50mVpp
Iout
0
0.5003
0.5003
0.5003
Efficiency
0.864
0.851
0.830
BILL OF MATERIALS
7.5V to 13.5V Input
-5V @ 0.5A Output
2/12/02
1847-5
DESIGNATION
C1
C2
QTY
1
1
C5
C6
C8
1
1
1
C9
D1
1
1
L1
P1
R2
R3
R4
R5
R6
R7
U1
1
1
1
1
1
1
1
DESCRIPTION
Nihon EC21QS03L
47uH 2A Power inductor
Sumida CDRH127-470
35m Ohm -30V P-FET (SO-8)
Fairchild FDS6685
5/7/02
SD MAXIM INTEGRATED PRODUCTS
MAX1856 11V to 14VVIN to -64Vout @0.35A
DESIGNATION
C1A, C1B, C1C, C1D
QTY
4
C2, C5
C3
C6
C7
C10
D2
1
1
1
N1
R1
R4
R5
R7
R8
T1
U1
1
1
1
1
1
1
1
DESCRIPTION
10mF, 25V X5R ceramic capacitor (1812)
1mF ceramic capacitor (0805).
220mF, 100V capacitor (through hole)
Sanyo 100MV220AX
2.2 mF, 10V ceramic capacitors (1206)
Taiyo Yuden LMK316BJ225MD
1000 pF, X7R ceramic capacitor (0805)
220 pF, 200V through hole capacitor
1A, 200V ultrafast rectifier
Central Semiconductor CMR1U-02
N-channel MOSFET
International Rectifier IRLR2905
0.012 W, 1W sense resistor ( 2512)
100k W, 5% resistor (0805)
270W, 2W, power resistor (through hole)
287 kW, 1% resistor (0805)
5.62 kW, 1% resistor (0805)
Coiltronics transformer (VP5-0083)
MAX1856EUB (10-pin mMAX)
No-load Output Voltage:

Vin V
10.998
12.004
12.504
13.209
14
Efficiency: (@ full Load = 0.35A)
Vin V
Iin A
14
1.949
13.195
2.073
12.503
2.189
12.01
2.292
11
2.51
Vout V
-63.83
-63.82
-63.82
-63.82
-63.82
Vout V
62.87
62.81
62.8
62.79
62.77
Iout A
0.353
0.355
0.355
0.356
0.357
Eff%
81.34
81.52
81.46
81.21
81.16
Schematics:
5/6/2002 +11V- +14V to-64V @350mA. This uses the MAX1856 and a transfomer (that will need
about a 1 to 5 turns ratio) to make a flyback converter.
+11V
to
+14V
1
T1: Coiltronics VP5-0083,
EFD20 core (AL=83 nH/sq. T)
Lpri =5.3uH,Turns ratio= 1:5
;
C1B
10uF
25V
C1A
10uF
25V
C1C
10uF
25V
C1D
10uF
25V
12
N1 IRLR2905
0.04W
55V
VCC
EXT
Jumper
10 SYNC/
6
JU
CS+
SHDN\
C7
1000 pF
7
U1PGND
9
MAX1856
1
C5
1uF
C2
1uF
C6
2.2uF
FB
LDO
R1
0.012
5
R8
5.6k
3 1%
REF
GND
FREQ
R4
2
100k
freq=500kHz
to
REF pin
T1
Secondary
7
68
59
4 10
3 11
2 R5
150
C10
220pF
200V
Notes:
T1: Coiltronics or equivalent. The general specs are: Primary L = 6uH (not
critical), Primary current rating = >7Amps, Turns ratio 1:5.
N1: Any logic-level (Ron rated at 5V) N-FET with similar ratings may be
substituted.
Output ripple is 100mV max.
C3
220uF
100V
Sanyo
MV-AX
D2, 1A 200V
Ultrafast
Rectifier
CMR1U-02
R7
287k
1%
- 64V VOUT
@ 350mA
4/23/99 - LHS
-48V to -60V at 100mA. This design in effect adds a regulated -12V to the -48V input so if
the input changes, the output changes by the same amount.
T1
Coiltonics CTX200-1
Primary
R1
47k
Q2
CMPT8099
D1
12V
zener
C1
10uF
63V
R2
27 Ohms
9
C2
0.1
VCC
EXT
SHDN
CS+
10
PGND
U1
MAX668
1
C5
1uF
C6
0.22
- 48V INPUT
LDO
REF
FREQ
2
FB
GND
Q1
Fairchild
NDT410EL
to MAX668
LDO pin
R3
0.33
7
5
R3
1k
U2
MAX
4130
3
C7
0.01
R5
10k
R4
240k
R6
96k
T1
Secondary
C3
47uF
D2 1N4448
Circuit Notes:
-60V OUT
100mA
1) Output current was tested up to 150mA

2) D1, D2, and Q2 are from Central Semiconductor but any similar devices will work fine.
3) Q1 is a 0.25 Ohm 100V NFET
4) D1 (12V zener) part # from Central Semi is CMP25242B
5) C1 needs to be only 10uF but we did not have any small values at 63V, so a 120uF
capacitor is used in this example.
6) This design adds a regulated -12V to the -48V input so if the input changes the output
changes by the same amount.
90% Efficient Inverting DC-DC Generates 12V Bus from 12V

Input
10.8V to 13.2V
INPUT
C2
10uF
25V
15
IN
1 POL
EXT
2
VL
C1
0.47uF
SYNC
14
VL
U1
MAX1847
16 SYNC
CS
13
JU1
SHDN
SHDN
3 FREQ
R3
62k
C5
10nF
REF
PGND
R4
150k
(300kHz)
FB
4 COMP
12
L1
47uH
CDRH
125-470
75mOhm
R15
100
C21
1nF
D1
EC21
QS03L
C8
1uF
16V
C7
47uF
16V
TPB
-12V @
0.5A
R5
0.05
0.5W
R6
95.3k
1%
6
R7
10.0k
1%
C6
10pF
C9
0.1uF
P1
FDS
6685
30mOhm
C10
1nF
5 REF
GND
10,11
1847-12b
RWY
08/26/03
Vin
12.00
10.77
12.00
13.25
20MHz BW
Iin
0.0011
0.61
0.55
0.50
Vout
-11.89
-11.88
-11.88
-11.88
250mVpp
Iout
0
0.501
0.501
0.501
Efficiency
0.906
0.902
0.898
90% Efficient Inverting DC-DC Generates 12V Bus from 12V

Input
BILL OF MATERIALS
-12V @ 0.5VOutput
8/26/03
1847-12b
DESIGNATION
C1
C2
QTY
1
1
C5
C6
C7
1
1
1
C8
C9
C10,C21
D1
1
2
1
L3
P2
R2
R3
R4
R5
R6
R7
R15
U4
1
1
1
1
1
1
1
1
DESCRIPTION
47uF 16V polymer capacitor
Sanyo 16TPB47M
Taiyo Yuden EMK316BJ105ML
Nihon EC21QS03L
47uH 1.8A Inductor
Sumida CDRH125-470
Fairchild FDS6685
0.05 Ohm 0.25W 5% resistor (1210)
13.5V to 16.5V
INPUT
1
C1
0.47uF
2
R2
27k
C2
27nF
10
V+
C5
4.7uF
25V
X5R
VL
EXT
FREQ
MAX1846
R1
150k
(300kHz)
3
CS
PGND
4
FB
REF
GND
6
P1
Si9407AEY
0.15Ohm
-15V @ 0.25A
L1
150uH
DO5022P
-154
8 0.25Ohm
COMP
C3
56pF
C4
0.1uF
R3
33k
D1
EC10
QS04
C6
10uF
25V
X5R
(2x)
R4
0.1
0.25W
R5
121k
1%
R6
10.0k
1%
1846-15c
RWY
8/13/02
Vin
15.001
13.501
15.005
16.512
Iin
0.0019
0.3137
0.2842
0.2603
Vout
-15.017
-15.013
-15.015
-15.017
55mVpp
Iout
0
-0.2505
-0.2505
-0.2505
Efficiency
0.889
0.882
0.875
BILL OF MATERIALS
-1.5V @ 0.25A Output
8/13/02
1846-15c
DESIGNATION
C1
C2
C3
C4
C5
QTY
1
1
1
1
1
C6
D1
L1
P1
R1
R2
R3
R4
R5
R6
U1
1
1
1
1
1
1
1
DESCRIPTION
Nihon EC10QS04
150uH 2A Inductor
Siliconix Si9407AEY
0.1 Ohm 0.25W 5% resistor (1210)
VoIP SLIC Supply

7/19/01 - RWY - 1856-24c
will need about a 1:2:2:1.5 turns ratio) to make a flyback converter.
1
+12V
T1: Coiltronics
EF12.6 Core
Lpri = 35uH
R1
10
Q1
IRLL2705
0.05 Ohms
55V
10 9
C1
10uF
25V
C2
1uF
25V
VCC
C8
EXT
10 SYNC/
SHDN\
CS+
R3
0.06
1
C6
1uF
10V
C7
2.2uF
U1PGND
MAX1856 5
FB
LDO
REF
GND
FREQ
2
R2
200k
R7
100
61000pF
C5
1000pF
R6
5.1k
1%
to MAX1856
REF pin
C3
12uF
100V
MV-AX
T1
Secondary
6
5 7
4 8
D1
MBRS1100
C4
33uF
35V
MV-AX
3
R8
70
0.5W
D2
CMR1U-02
R4
365k
1%
R5
365k
1%
- 65V OUT
100mA
-24V
52mA
C9
100pF
200V
Notes:
T1: Coiltronics SG7 core (EF12.6) or equivalent (95nH/N*N). The general specs are:
Primary L = about 35uH (not critical), Primary current rating = >1.5Amps, Turns ratio 1:2:2:1.5.
Transformer design:
Layer 1: Pin 5 to pin 6 34 turns #34AWG
Snubber (R8, C9) needs adjustment in circuit.
SLIC SUPPLY BILL OF MATERIALS

12V Input
-24V @ 52mA or 65V @ 100mA Output
07/19/01
1856-24c
DESIGNATION
C1
QTY
1
C2
C3
C4
C5,C8
C6
2
1
C7
C9
D1
1
1
D2
N1
R1
R2
R3
1
1
1
R4,R5
R6
R7
R8
T1
2
1
1
1
1
U1
DESCRIPTION
12uF 100V aluminum electrolytic
Sanyo 100MV12AX
33uF 35V aluminum electrolytic cap
Sanyo 35CV33AX
100pF 200V ceramic capacitor (radial)
Motorola MBRS1100
50m Ohm 55V MOSFET (SOT-223)
IRLL2705
0.06 Ohm 0.5W resistor (2010)
Dale WSL-2010-R060F
70 Ohm 0.5W 5% resistor (axial)
1:2,2,1.5 transformer
Coiltronics SG7Core Lpri = 35uH
2/6/01 - RWY
will need about a 1:2:2:2 turns ratio) to make a flyback converter.
1
+5V
T1: TDK
RM4
Lpri=8.5uH
R1
10
12 11
C1
2x 22uF
10V
C2
1uF
6.3V
C7
EXT
10 SYNC/
SHDN\
4
C6
0.22uF
VCC
CS+
U1PGND
MAX1856 5
FB
REF
GND
FREQ
R2
200k
R7
100
61000pF
R3
0.03
LDO
Q1
FDS6612A
0.03 Ohms
30V
C5
2200pF
R6
5.11k
3 1%
to MAX1856
REF pin
C3
5.6uF
100V
MV-AX
T1
Secondary
7
6 8
5 9
D1
MBRS1100
C4
33uF
35V
MV-AX
4
R8
70
0.5W
D2
MURS120
R4
536k
1%
R5
909k
1%
- 72V @
60mA
-24V @
150mA
C8
100pF
100V
Notes:
T1: TDK RM4 core or equivalent. The general specs are:
Lpri = about 8.5uH (not critical), Primary current rating = >3.5Amps, Turns ratio 1:2:2:2.
P: 8Turns #32AWG tri-filar S1: 40Turns #38AWG S2: 40Turns #38AWG S3: 40Turns #38AWG
2/06/2001
RWY MAXIM INTEGRATED PRODUCTS
Int01Q3a_bom / 1856-24b
MAX1856 5VIN to -72Vout @60mA or 24V@150mA
DESIGNATION
C1A, C1B
QTY
2
C2
C3
C4
C5
C6
C7
C8
D1
1
1
1
1
1
D2
Q1
R1
R2
R3
R4
R5
R6
R7
R8
T1
U1
1
1
1
1
1
1
1
1
1
1
DESCRIPTION
22F, 10V X5R ceramic capacitor (1812)
Taiyo Yuden LMK432BJ226MM
1F 6.3V ceramic capacitor (0603)
Taiyo YudenJMK107BJ105MA
5.6F 100V Electrolytic capacitor (through hole)
Sanyo 100MV5.6AX
33F 35V Electrolytic capacitor (through hole)
Sanyo 35MV33AX
2200 pF X5R ceramic capacitor (0603)
0.22 F X5R ceramic capacitor (0603)
1000pF X5R ceramic capacitor (0603)
100 pF, 100V ceramic capacitor (0805)
1A, 100V Schottky rectifier
On Semiconductor MBRS1100
On Semiconductor MURS120
30 mOhm 30V N-channel MOSFET
Fairchild FDS6612A (SO-8)
10 , 5% resistor (0603)
200k , 5% resistor (0603)
0.03 , sense resistor ( 1206)
536k , 1% resistor (0603)
909k , 1% resistor (0603)
5.11 k, 1% resistor (0603)
100 , 5% resistor (0603)
70 , 5%, 0.5W, resistor (2010)
Custom transformer (TDK RM4 core)
668 ISO Supply

5 Jan 00 RWY
T1
Coiltronics
SG3-0138
1:5:5:5:0.71
4
10
5V INPUT
C9
22uF
10V
C1
100uF
50V
5
9
-24V @ 100mA
3
5
C10
0.01uF
R6
10
D1
MBRS1100
8
C2
100uF
100V
5
7
Q1
IRF7401
D2
MURS120
D3
MBRS140
12
C3
0.86 10uF
11
10V
R7
10
-72V
@ 25mA
1
U2
MAX8867
EUK33
2
C4
1uF
10V
5
C5
0.01uF
9
VCC
C11
1uF
8
EXT
CS+
LDO
U1
MAX668
R5
0.025
PGND
10
4
C12
0.22uF
SHDN
REF
FB
FREQ
2
GND
3
R8
499k
C6
1uF
10V
C8
0.1uF
U4
MOC207
+3.3V@
4 100mA
R3
2k
1
R9
10k
5
R4
120
C13
0.47uF
C7
0.1
U3
TLV431
R1
226k
R2
12.4k
-24V
ISOLATION
Vin (V)
4.50
5.01
5.50
Iin (mA)
1.27
1.138
1.038
Vo (V)
24.01
24.01
24.01
Io (mA)
100.2
100.2
100.2
Vo (V)
73.2
73.2
73.2
Io (mA)
25.2
25.2
25.2
Vo (V)
3.28
3.28
3.28
Io (mA)
103.9
103.9
103.9
Eff. (%)
80.3
80.5
80.4
MAX1856 12VIN to -80Vout @0.25A and 24@0.12A

DESIGNATION
C1A, C1B, C1C, C1D
QTY
4
C2, C5
C3
C4
C6
C9
C10
D1, D2
1
1
2
N1
R1
R4
R5
R6
R7
R8
R9
T1
U1
1
1
1
1
1
1
1
1
1
DESCRIPTION
10mF, 25V X5R ceramic capacitor (1812)
1mF ceramic capacitor (1206).
Taiyo Yuden EMK316BJ105MF
100mF, 200V capacitor (through hole)
Sanyo 200MV100FAZ
330 mF, 50V capacitor (through hole)
Sanyo50MV330AX
4.7 mF, 10V ceramic capacitors (1206)
Taiyo Yuden LMK316BJ475ML
General Semiconductor MURS120
N-channel MOSFET
Fairchild FDD3570 (TO-252)
0.013 W, 1W sense resistor ( 2512)
100k W, 5% resistor (0805)
100 W, 2W, power resistor (through hole)
787 kW, 1% resistor (0805)
374 kW, 1% resistor (0805)
4.99 kW, 1% resistor (0805)
33 W, 2W, power resistor (through hole)
DT magnetics transformer (DTPH1000-0001)
MAX1856EUB (10-pin mMAX)
Efficiency Measurements:
VIN = 10.8V (-80V @ 250mA and 24V @ 120mA) = 74.4%
VIN = 12V (-80V @ 250mA and 24V @ 120mA) = 73.3%
VIN = 13.2V (-80V @ 250mA and 24V @ 120mA) = 72.3%
Cross-Regulation: VOUT1= -24V nominal; VOUT2 = -80V nominal
VIN =10.8V (250mA load on VOUT2; no load on VOUT1) VOUT1 = -25.14V; VOUT2 = -80.7V
VIN = 10.8V (no load on VOUT2; 120mA load on VOUT1) VOUT1 = -22.59V; VOUT2 = -82.69V
VIN =12V (250mA load on VOUT2; no load on VOUT1) VOUT1 = -24.8V; VOUT2 = -80.9V
VIN = 12V (no load on VOUT2; 120mA load on VOUT1) VOUT1 = -22.61V; VOUT2 = -82.7V
VIN =13.2V (250mA load on VOUT2; no load on VOUT1) VOUT1 = -24.92V; VOUT2 = -80.9V
VIN = 13.2V (no load on VOUT2; 120mA load on VOUT1) VOUT1 = -22.63V; VOUT2 = -82.8V
Schematics:
2/18/02
+12V to -80V at 250mA, -24V @120mA. This uses the MAX1856 and a transfomer (that
will need about a 1 to 7 turns ratio) to make a flyback converter.
1
+12V
T1: EFD20
Lpri = 3.9uH
9
VCC
10 SYNC/
Jumper SHDN\
J1
C1
10uF
25V
(4x)
8
EXT
12
11
R9
33
2W
N1 FDD3570
0.02 Ohms
80V
CS+
6
R1
0.013
U1PGND
MAX1856
5
C2
1uF
C5
1uF
C6
4.7uF
C9
220pF
50V
LDO
REF
2
FB
GND
R8
4.99k
3 1%
FREQ
R4
100k
freq=500kHz
374k
1%
to
REF pin
C3
100uF
200V
T1
Secondary
59
6 8
D1 1A 200V
Ultrafast
Rectifier
C4
MURS120
330uF 50V
7
R5
100
2W
R6
787k
1%
- 80V OUT
D2 1A 200V @ 250mA
Ultrafast
Rectifier
MURS120
C10
330pF
200V
Notes:
T1: Coiltronics EFD20 or equivalent. The general specs are: Primary L =
3.9uH (not critical), Primary current rating = >7Amps, Turns ratio 1:7.
N1: Any logic-level (Ron rated at 5V) N-FET with similar ratings may be
substituted.
- 24V OUT
@ 120mA
2/6/01 - RWY
+10V to +25V into -25.5V at 80mA, -62V at 90mA, +38V @ 90mA. This uses the
MAX1856 and a transfomer (that will need about a 1:2:3:3 turns ratio) to make a flyback
converter.
+10V to +25V
INPUT
T1: Coiltronics
SG3
Lpri=22uH
R1
10
Q1
IRL540NS
0.05 Ohms
100V
12 11
C1
100uF
35V
MV-AX
C2
1uF
50V
C6
1uF
10V
C7
0.22uF
C8
VCC
EXT
R7
10 SYNC/
61000pF 100
CS+
SHDN\
R3
0.033
7
U1PGND
C5
MAX1856 5
2200pF
FB
1
LDO
R6
5.11k
4
REF
3 1%
GND
FREQ
R2
200k
to MAX1856
REF pin
C3
22uF
100V
MV-AX
T1
Secondary
D1 4 8
MBRS1100
5
R8
70
0.5W
D2
MURS120
R5
453k
1%
- 62V OUT
90mA
-25.5V
80mA
C9
C4
100pF
100uF
100V
35V
MV-AX D3
MURS120
R4
232k
1%
C10
68uF
63V
MV-AX
+38V
90mA
Notes:
T1: Coiltronics Standard Geometry Core SG3 or equivalent. The general specs are:
Primary L = about 22uH (not critical), Primary current rating = >3Amps, Turns ratio 1:2:3:3.
3/14/02 - RWY 1856-80b

will need about a 1:2.5:2.8:2.8 turns ratio) to make a flyback converter.
1
+5V
T1: Lpri = 2uH

1:2.5:2.8:2.8
DTPH1000-0003
C8
470pF
50V
R4
10
R5
10
12 11
C9
1uF
10V
C3,C4
3x 22uF
10V
VCC
C10
EXT
10 SYNC/
SHDN\
CS+
61000pF
R6
0.012
R14
10
1
C11
1uF
10V
C12
2.2uF
U1PGND
MAX1856 5
FB
LDO
REF
GND
FREQ
2
R8
100k
R7
100
N1
IRLR8503
18m Ohms
30V
C13
1000pF
R9
5.1k
1%
to MAX1856
REF pin
C1
22uF
100V
MV-AX
T1
Secondary
7
6 8
5 9
D2
CMR1U-02
C2
100uF
35V
MV-AX
4
R1
72
2W
R11
365k
1%
D1
CMR1U-04
R10
464k
1%
- 80V OUT
@ 120mA
-24V
@ 60mA
C5
270pF
200V
Notes:
T1: DT Magnetics DTPH1000-0003 or equivalent. The general specs are:
Primary L = about 2uH (not critical), Primary current rating = >8Amps, Turns ratio 1:2.5:2.8:2.8.
Vin
4.9992
4.9942
5.0032
4.4961
5.0007
5.511
Iin
0.007
0.482
2.650
3.455
3.087
2.810
VOUT1
-24.624
-23.509
-24.626
-24.173
-24.204
-24.231
IOUT1
0
0.0602
0
0.0602
0.0602
0.0602
VOUT2
-81.5
-82.0
-79.8
-80.2
-80.3
-80.4
IOUT2
0
0
0.1203
0.1203
0.1203
0.1203
Efficiency
0.715
0.720
0.720
BILL OF MATERIALS
4.5V to 5.5V Input
-24V @ 60mA, -80V @ 120mA Output
3/14/02
1856-80b
DESIGNATION
C1
QTY
1
C2
C3,C4
C5
C6,C7
C8
C9,C11
1
0
1
1
C10,C13
C12
2
1
D1
D2
N1
R1
R2,R3
R4,R5,R14
R6
1
0
3
1
R7
R8
R9
R10
R11
T1
1
1
1
1
1
1
U1
DESCRIPTION
Sanyo 100MV22AX
Sanyo 35MV100AX
Not installed
18mOhm 30V N-chan MOSFET (D-PAK)
72 Ohm 2W 5% resistor
Not installed
12m Ohm 1% 1W resistor (2512)
Dale WSL 2512 0.012 1%
1:2.5:2.8:2.8 Power Transformer Lpri = 2uH
DT Magnetics DTPH1000-0003
1/29/02 - RWY
will need about a 1:2.5:3.75:3.75 turns ratio) to make a flyback converter.
1
+5V
T1: SG3-0138 core

Lpri = 3uH
1:2.5:3.75:3.75
C8
470pF
50V
R4
10
R5
10
12 11
C9
1uF
25V
C3,C4
3x 22uF
10V
VCC
C10
EXT
10 SYNC/
SHDN\
CS+
61000pF
R6
0.012
R14
10
1
C11
1uF
10V
C12
2.2uF
U1PGND
MAX1856 5
FB
LDO
REF
GND
FREQ
2
R8
100k
R7
100
N1
IRLR8503
18m Ohms
30V
C13
1000pF
R9
5.1k
1%
to MAX1856
REF pin
C1
22uF
160V
FAZ
T1
Secondary
7
6 8
5 9
D2
CMR1U-02
C2
100uF
35V
MV-AX
4
R1
135
4W
C5
270pF
200V
R11
261k
1%
- 100V OUT
@ 75mA
D1
CMR1U-04
R13
22k
R10
681k
1%
-24V
@ 120mA
Notes:
T1: Coiltronics SG4-0138 or equivalent. The general specs are:
Primary L = about 3uH (not critical), Primary current rating = >6Amps, Turns ratio 1:2.5:3.75:3.75.
Layer 1: (1-12) 6 turns trifilar #26AWG
Layer 2: (4-9,5-8) 23 turns bifilar #36AWG
Layer 3: (6-7) 15 turns #36AWG
Layer 5: (2-11) 6 turns trifilar #26AWG
R13: Controls leakage energy when -24V output has no load, if necessary.
Vin
4.74
4.74
4.75
4.74
5.00
5.26
Iin
0.0346
1.1154
2.4545
3.3200
3.1500
3.0109
VOUT1
-104.9
-108.0
-98.0
-104.0
-104.0
-104.0
220mVpp
IOUT1
0
0
0.0751
0.0751
0.0751
0.0751
VOUT2
-23.375
-21.637
-25.215
-22.753
-22.807
-22.839
50mVpp
IOUT2
0
0.1209
0
0.1209
0.1209
0.1209
Efficiency
0.671
0.671
0.667
BILL OF MATERIALS
-24V @ 120mA, -100V @ 75mA Output
1/29/02
1856-100
DESIGNATION
C1
QTY
1
C2
C3,C4
C5
C6,C7
C8
C9
1
0
1
1
C10,C13
C11
2
1
C12
D1
D2
N1
R1
R2,R3
R4,R5,R14
R6
1
0
2
1
R7
R8
R9
R10
R11
R13
T1
1
1
1
1
1
1
1
U1
DESCRIPTION
Sanyo 160MV22FAZ
Sanyo 35MV100AX
Not installed
3.8A 55V N-channel MOSFET (SOT-223)
135 Ohm 5% 4W resistor
Not installed
Dale WSL 2010 0.012W 1%
1:2.5:3.75:3.75 Transformer Lpri = 3uH
Coiltronics SG3-0138 core
8/19/04 - RWY
+12V to -26V at 120mA, -53V at 120mA, -80V at 100mA . This uses the MAX1856 and a
transfomer (that will need about a 1:2:2:2 turns ratio) to make a flyback converter.
1
+12V
T1: Lpri = 22uH

1:2:2:2
CTX01-14853
C8
470pF
50V
R4
10
R5
10
12 11
C3,C4
2x 10uF
25V
C9
1uF
25V
VCC
C10
EXT
10 SYNC/
SHDN\
CS+
C12
2.2uF
U1PGND
MAX1856 5
FB
LDO
REF
FREQ
2
R8
200k
GND
R7
100
6 1nF
C11
1uF
10V
R6
0.025
C13
1nF
R9
5.1k
1%
C1
12uF
100V
MV-AX
D1
CMR1U
-04
to MAX1856
REF pin
T1
Secondary
C2
47uF
50V
MV-AX
C14
12uF
100V
MV-AX
N1
IRLR2905
0.03 Ohms
55V
7 D3 6 8
CMR1U
-02
R11
649k
R12
649k
- 80V
@ 100mA
VOUT1
5 9 R1 4
200
0.5W
D2
CMR1U
-02
R10
665k
C5
100pF
200V
-26V
@ 120mA
VOUT2
R15
22k
-53V
@ 120mA
VOUT3
R14
100k
Notes:
R13: Controls leakage energy when -26V output has no load.
R14: Controls leakage energy when -53V output has no load.
Vin
12.02
10.79
12.03
13.23
Iin
0.009
0.97
0.87
0.80
Vout1
-80.62
-79.80
-79.89
-79.90
Iout1
0
0.05
0.05
0.05
Vout2
-26.26
-25.98
-26.01
-26.03
Iout2
0
0.06
0.06
0.06
Vout3
-53.37
-52.81
-52.85
-52.98
Iout3
0
0.06
0.06
0.06
Eff.
0.833
0.834
0.825
12.03
12.02
12.02
1.09
0.92
1.40
-79.30
-81.19
-79.49
0.1
0
0.1
-25.75
-25.54
-26.20
0.12
0.12
0
-53.30
-52.09
-52.53
0
0.12
0.12
0.840
0.842
0.847
BILL OF MATERIALS
-26V @ 120mA, -53V @ 120mA, -80V @ 120mA Output
8/19/04
1856-80c
DESIGNATION
C1,C14
QTY
2
C2
C3,C4
C5
C6,C7
C8
C9
1
0
1
1
C10,C13
C11
2
1
C12
D1
D2,D3
N1
R1
R2,R3
R4,R5
R6
1
0
2
1
R7
R8
R9
R10
R11,R12
R14
R15
T1
1
1
1
1
2
1
1
1
U1
DESCRIPTION
Sanyo 100MV12AX
Sanyo 50MV47AX
Not installed
30mOhm 55V N-chan MOSFET (D-PAK)
200 Ohm 0.5W 5% resistor (2010)
Not installed
Dale WSL 2010 0.025 1%
1:2:2:2 Power Transformer Lpri = 22uH
Coiltronics CTX01-14853
MAX8564 for Thomsons Jupiter STB Chip Set

9V to 15Vin
3.3V+/-5% IN
6.5V+/-10% IN
R1
2x1.3,
1/4W
270
ZD1
CMHZ5242B
Q1
1/2 FDS6930A
R5
100
R6
499
FB1
EN1
VDD
High to turn on 3.3V
Power switch
C3
2.2uF
Q2
1/2 FDS6930A
DRV1
R4
2K
C2
0.1uF
R3
3x3.0,
1/4W
U1
C5
1.0uF
VDD
MAX8564
OUT1
2.5V/735mA
C4
10uF
R2
C1
2.2uF
C6
1.0uF
OUT2
5V/0.7A
DRV2
C7
10uF
R7
100
FB2
R8
4.53K
POK1
EN2
GND
POK2
VDD
R10
499
R9
100K
C8
0.1uF
Figure 1: Dual Outputs with Sequencing for STB Chip Set Power
BOM for Figure 1:

Component
U1
Q1/2
ZD1
C1, C3
C2, C8
C4, C7
C5, C6
R1
R2
R3
R4
R5, R7
R6, R10
R8
R9
QTY
1
1
1
2
2
2
2
2
1
3
3
2
2
1
3
Description
MAX8564EUB Dual LDO Controller
Dual MOSFET:30V, 55m max at 4.5Vgs. Fairchild FSD6930A
Zener Diode: 12V/500mW. Central: CMHZ5242B
Capacitor: 2.2uF/10V, X5R Ceramic
Capacitor: 0.1uF/16V, X7R Ceramic
Capacitor: 10uF/6.3V,X5R Ceramic
Capacitor: 1uF/6.3V,X7R Ceramic
Resistor: 1.3, 5%, 1206
Resistor: 270, 5%, 0603
Resistor: 3.0, 5%, 1206
Resistor: 2k, 1%, 0603
Resistor: 100, 5%, 0603
Resistor: 499, 1%, 0603
Resistor: 4.53k, 1%, 0603
Resistor: 100k, 5%, 1206
Please note that series resistors have been added to the Drains of the MOSFETs to
reduce the power dissipation of the MOSFETs. This allows the use of dual SO-8 for
2 outputs, instead of 2 single SO-8. Multiple 1/4W resistors in parallel are used
instead of a more costly higher power single resistor.
All components are labeled on schematic
CN
9/15/04
1 of 1
(Note: This file has been updated, 8/29/05)
Vin (DC) Iin (DC)

Vout
Iout1
Pin
Pout
Loss
81
0.274
28.03
0.71
22.194 19.9013
2.2927
100.8
0.217
27.81
0.71 21.8736 19.7451
2.1285
120.2
0.185
27.83
0.72
22.237 20.0376
2.1994
139.5
0.162
27.92
0.72
22.599 20.1024
2.4966
160.8
0.144
28.08
0.73 23.1552 20.4984
2.6568
165.6
0.14
28.12
0.73
23.184 20.5276
2.6564
179.5
0.13
28.24
0.73
23.335 20.6152
2.7198
191.6
0.124
28.32
0.74 23.7584 20.9568
2.8016
Eff
89.66973
90.26909
90.10928
88.95261
88.52612
88.5421
88.34455
88.20796
OFFLINE LED DRIVER

120AC INPUT 28V @0.7A DC OUTPUT
MAX1847
95
94
EFFICIENCY %
93
92
91
90
89
EFFICIENCY
88
87
80
90
100
110
120
130
140
150
160
170
180
190
INPUT VOLTS DC (After Rectification)
DESIGNATION
C12
C6
C4, C7, C9
C5
C1, C2
C10
C8
C11
MAX1847 OFFLINE LED DRIVER

120VAC Input
28V @ 0.7A Output
01/14/05
QTY DESCRIPTION
1
330pF Ceramic Cap. NPO (0603)
1
1000pF Ceramic Cap. NPO (0603)
3
0.1uF 16V X7R Ceramic Cap. (0603)
Taiyo Yuden EMK107BJ104MA
1
Taiyo Yuden LMK107BJ474MA
2
TDK C5750X7R2E105M
1
Taiyo Yuden GMK325BJ225MN
1
1
100uF 250V Electrolytic Cap.
Sanyo 250MV100FAZ (Optional if 120HZ
C3
D1
D2
D3
D4
D5-D8
L1
L2
N1
R3
R2
R1
R12
R8
R5
R4
R6
R7
U1
1
1
1
1
1
1
1
1
1
U2
V1, V2
ripple can be tollerated)

220uF 16V Electrolytic Cap.
Sanyo 16MV220AX
Diode, 100V 0.15A (SOT-23)
Central Semi, CMOD 4448
Transorb, 12V (SMB)
Central Semi, 1SMB12A
Transorb, 36V (1.5KE)
General Semi, 1N6284A
Diode, 200V 1A (DO-41)
General Semi, UG1D
LED White, 5W, 700mA, 7 Volt
Luxeon LXHL-LW6C
470uH, 2A Inductor, Toroid, Powder Iron
Talema, SWC-3.0-470
Inductor, Common Mode
Delevan, 4222
250V 2.5 Ohm N-Channel (SOT-223)
International Rec, IRFL214
Dale WSL0805 0.05 1.0%
5k Potentimoeter, 10T
470k Ohm 5% resistor (0.25W)
High Efficiency, Current-Mode PWM
Controller (16 QSOP)
Maxim MAX1847EEE
Rectifier, Bridge, 600V, 0.5A
Central Semi CBR1-D060S
Metal-Oxide Varistor 130VAC
Panasonic, EZR-V05D201
3.135V to 3.465V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
27k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
560pF
DH
C4
22uF
6V
(2x)
10
C3
0.1uF
N1A
1/2
FDS
6898A
C5
22uF
L1
6V
(2x) 0.68uH
DO3316P
-681HC
1.8V@4A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6898A
6
7
R2
12.7k
R4
2.7
C7
22uF
6V
C8
22uF
6V
C6
1.2nF
R3
10.0k
1953_1m8
RWY
2/07/03
Vin
3.1299
3.1444
3.3014
3.4724
20MHz BW
Iin
0.0305
2.5532
2.4320
2.3097
Vout
1.809
1.807
1.808
1.808
10mVpp
Iout
0
4.0037
4.0037
4.0036
Efficiency
0.901
0.901
0.902
BILL OF MATERIALS
1.8V @ 4A Output
2/07/03
1953_1m8
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C5,C7,C8
1
6
C6
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Central Semi CMPSH-3
0.68uH Power Inductor
Coilcraft DO3316P-681HC
14m Ohm 20V Dual N-ch MOSFET (SO-8)
Fairchild FDS6898A
10.8V to 13.2V
VIN
12
IN
R3
47k
D1
CMSSH-3
11
VL
BST
15
3 COMP
C8
470pF
U1
MAX8543
5
EN3.3
VL
VL
C2
4.7uF
6V
X5R
C1
0.1uF
16V
R7
200k
EN
DH
LX
N1A
1/2
FDS
6930A
14
13
8 ILIM1
C4
10uF
16V
X5R
N1B
1/2
FDS
6930A
DL 10
9
PGND
L1
3.3uH
R9
3.9
C12
330pF
R8
100k
CS+ 7
CS- 6
16
R6
18.2k
(1MHz)
C3
0.1uF
FSYNC
FB 4
SS
C5
0.1uF
C6
22uF
6V
X5R
R4
470
C9
0.47uF
R5
470
C11
100pF
3.3V @ 2.5A
VOUT2
C10
0.47uF
R1
31.6k
R2
10.0k
GND
1
8543_3b3
RWY
12/20/04
Vin
12.00
10.78
12.01
13.23
Iin
0.0205
0.86
0.79
0.71
Vout
3.33
3.33
3.33
3.33
30mVpp
Iout
0
2.5
2.5
2.5
Efficiency
0.898
0.877
0.886
BILL OF MATERIALS
3.3V @ 2.5A Output
12/20/04
8543_3b3
DESIGNATION
C1,C3,C5
C2
QTY
3
1
C4
C6
C8
C9,C10
1
2
C11
C12
D1
1
1
1
L1
N1
R1
R2
R3
R4,R5
R6
R7
R8
R9
U1
1
1
1
2
1
1
1
1
1
DESCRIPTION
Taiyo Yuden JMK212BJ475MG
Taiyo Yuden EMK325BJ106MN
22uF 6V ceramic cap (1206)
Taiyo Yuden JMK316BJ226ML
100mA 30V Schottky diode (SOT-323)
Central Semi CMSSH-3
3.3uH 4.3A Power Inductor
Toko FDV0630-3R3
Fairchild FDS6930A
TFT Monitor
10V to 20V
INPUT
C2
1uF
10V
9
R1
20k
D1
CMPSH-3
16
VP
15
VL
BST
ILIM
COMP
DH
C1
27nF
14
13
12
LX
DL
VL
GND
C4
220uF
25V
HC
11
C3
0.1uF
R3
10
R4
10
OUT
1
POK
10
FB2
B3
C11
220uF
10V
MV-AX
R5
30.9k
C6
4.7nF
B2
5V@1A
3
4
FB
127-330
N1
1/2
Si9936
U1
MAX1864T
R13
100k
N1
1/2
Si9936
C5
4.7uF L1
25V 33uH
Y5V CDRH
R6
10.0k
5
6
VL
7
8
FB3
VL
1864_5d
RWY
9/12/01
Vin
9.976
14.994
20.010
200mVpp
Iin
0.539
0.365
0.278
Vout
5.0558
5.0564
5.0570
100mVpp
Iout
1.005
1.005
1.005
Efficiency
0.949
0.928
0.914
BILL OF MATERIALS
10V to 20V Input
5V @ 1A Output
09/12/01
1864_5d
DESIGNATION
C1
C2
QTY
1
1
C3
C4
1
1
C5
C6
C7
1
1
D1
L1
N1
R1
R2
R3,R4
R5
R6
U1
1
1
2
1
1
1
DESCRIPTION
Sanyo 25MV220HC
4.7uF 25V Y5V ceramic capacitor (1206)
Taiyo Yuden TMK316F475MG
Sanyo 10MV220AX
Sumida CDRH127-330
50m Ohm 30V Dual MOSFET (8-SO)
International Rectifier IR7303
30.9 k Ohm 1% resistor (0805)
Jinrong Qian, Corporate Application Engineer

With most regulators, it is usually difficult to generate an output voltage less than the reference voltage.
This note describes a way to use the MAX1864 to achieve an output voltage less than its 1.236V
reference.
The MAX1864 includes a positive linear regulator gain block. With a few external resistors, it can
achieve an output voltage below 1.236V. Fig. 1 shows the schematic of the implementation. Since the
voltage at FB pin is the reference voltage, a lower output voltage VOUT1 is obtained if a voltage (V2)
higher than the reference voltage is generated. Due to the high input impedance at FB pin, if R5 is chosen
to be equal to R6, we have
V2-VFB = VFB-VOUT1,
This yields V2 = 2VFB-VOUT1.
To generate a 1.0V output voltage with VFB=1.236V, V2 should then be 1.472V. This can be achieved by
properly choosing the resistance of R8 and R9
R9 =
V FB
R8 ,
V2 V FB
if R8 = 10k, R9 will be 52.4k, Therefore, 1.0V output voltage is generated.

+5V INPUT
C3
4.7uF
10V
16
15
VL
IN
9
R1
18k
C1
18nF
D1
CMPSH-3
BST
ILIM
COMP
DH
1200uF
10V
MV-AX
14
C4
0.1uF
N1
Si4410DY
13
R3 4.7
C2
820pF
L1
12uH
12
VOUT1: 1.0V@6A
LX
DL
+5V
GND
11
C7
470uF
6V
TANT
(3x)
R4 4.7
N2
Si440DY
10
U1
MAX1864T
R2
100k
POK
C5
OUT
1
POK
3
R5 10.0k
FB 4
VL
R6 10.0k
B2
FB2
B3
FB3
R7
220
R8 10k
R9
52.4k
7
8
C9
330pF
C10
22uF
10V
Q3
CMPT
3904
C8
1uF
10V
V2
R10
1k
VL
Fig. 1 Schematic of 1.0V power supply with MAX1864
C3
4.7uF
10V
+5V INPUT
C5
1200uF
10V
MV-AX
D1
CMPSH-3
9
R1
15k
C1
22nF
16
VP
15
VL
BST
ILIM
COMP
DH
LX
DL
+5V
GND
11
C4
0.1uF
R3
4.7
R4
4.7
10
OUT
1
POK
3
R5
10.0k
FB 4
B2 5
FB2 6
+1.24V
B3
FB3
R7
220
C9
330pF
R8
22.1k
R9
22.1k
+5V
C8
1uF
10V
Q3
CMPT
3906
C10
22uF
10V
R10
100
R11
1.00k
8
C11
0.1uF
R12
1.00k
DDR Termination @ 6A
1.25V@6A
C7
1200uF
2.5V
OS-CON
D3
EC31
QS03L
N2
FDS6690A
R6
10.0k
1864_1v2
RWY
8/23/01
L1
D2
1.5uH
EC31
DO5022P
QS03L
N1
FDS6690A
U1
MAX1864T
R2
100k
POK
13
12
C2
1000pF
C6
22uF
10V
(4x)
14
+2.5V
1864_1v2
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4,C11
C5
2
1
C6,C10
C7
C8
C9
D1
1
1
D2,D3
L1
N1,N2
Q3
R1
R2
R3,R4
R5,R6
R7
R8,R9
R10
R11,R12
U1
1
1
2
2
1
2
1
1
1
5V Input, 2.5V Reference

1.25V @ 6A Output
10/22/01
DESCRIPTION
1200uF 10Valuminum electrolytic capacitor
Sanyo 10MV1200AX
1200uF 2.5V organic semiconductor cap
Sanyo OS-CON 2R5SP1200M
330pF ceramic capacitor (0805
100mA Schottky diode (SOT-23)
Nihon EC31QS03L
17m Ohm N-channel MOSFET (SO-8)
Fairchild FDS6690A
200mA 40V PNP Transistor (SOT-23)
CMPT3906
Vin
+
10.8V to 13.2V
INPUT
VL
C4
1.0uF
10V
16
VP
BST 14
DH
13
LX
12
DL
11
+5V
15
POK
C5-C7
270uF
16V
OS-CON
(3x)
D1
CMPSH-3
1 POK
C1
15nF
L1
2.2
HC2-2R2
N1
IRF7811W
N3
IRF7811W
GND 10
R8
1.0
VL
R4
100k
R1
22.6k
C3
0.1uF
R9
1.0
R12
10
N2
IRF7811W
U1
MAX1864T
R13
10
D2
CMSH3-40
C11
3.3nF
Vout
C8
680uF
6.3V
OS-CON
1.0 to 5.5V @
12A
GND
OUT
FB2
FB3
ILIM
FB
B2
B3
COMP
C2
22PF
R10
24.9k
1%
C10
1.5nF
R2
22.6k
1%
Vcon
R11
10.5k
1%
Vc=0V > Vo=5.5V

Vc=4.096V > Vo=1.0V
AGND
+5V
C12
0.1uF
23
VDD
13
18
REFIN
REFOUT
U2
MAX503
+
C9
33uF
22 ROFS
14 AGND
12
RFB
21
VOUT
20
DGND
17 REFGND
2
A0,A1
CLR
CS
WR
LDAC
D0-D7/D8-D9,
S0,S1
VSS
19
1864_12B
SM
9/27/01
1V to 5.5V @ 12A
10.8-13.2V Input
1V to 5.5V @ 12A Output
09/26/01
1864_12B
DESIGNATION
C2
C10
C11
C1
C3,C12
C4
C9
C5-C7
C8
D1
D2
N1-N3
R8,R9
R12,R13
R11
R10
R1,R2
R4
L1
U1
U2
QTY DESCRIPTION
1
Cap 22pF 50V Ceramic NPO 0805,
Panasonic (ECJ-2CV1H220J)
1
Cap 1.5nF 50V Ceramic X7R 0805,
Panasonic (ECJ-2VB1H152K)
1
Cap 3.3nF 50V Ceramic X7R 0805,
1
Cap 15nF 50V Ceramic X7R 0805,
2
Cap 0.1UF 25V X7R Ceramic 0805,
Panasonic (ECJ-2VB1E104K)
1
Cap 1.0uF 10V X7R Ceramic 0805,
Taiyoyuden (LMK212BJ105M)
1
Cap 33uF 6.3V Electrolytic, Sanyo
(6MV33HC)
3
Cap 270 uF 16V OSCON,
Sanyo (16SP270M)
1
Cap 680 uF 6.3V OSCON,
Sanyo (6SP680M)
1
Diode 30V 0.1A Schottky SOT-23, Central
Semi (CMPSH-3)
1
Diode 40V 3A Schottky SMC, Centralsemi
(CMSH3-40)
3
NFET 0.012 Ohm 30V SO-8, International
Rectifier (IRF7811W)
2
Resistor 1.0 Ohm 5% 0805
2
Resistor 10 Ohm 5% 1206
1
Resistor 10.5k Ohm 1% 0805
1
2
1
Resistor 100k Ohm 5% 0805
1
Inductor, 2.2uH Coiltronics (HC2-2R2)
1
IC xDSL/Cable Modem Triple Output
Power Supplies 16 QSOP, Maxim
(MAX1864TEEP)
1
IC Low-Power, Parallel-Input VoltageOutput, 10-Bit DAC 24 SSOP, Maxim
(MAX503CAG)
Base-Station
3.0V to 3.6V
INPUT
D1
CMPSH1-4
C3
10uF
1
R1
47k
C1
270pF
5
IN
ILIM
BST
COMP
U1
MAX1953
C2
5pF
DH
C5
22uF
6V
X5R
(2x)
10
C4
0.1uF
N1
1/2
FDS
6898A
L1
0.33uH
DO3316P
-331HC
LX
DL
PGND
GND
FB
C6
22uF
6V
(2x)
N1
1/2
FDS
6898A
1.5V@6A
R2
8.87k
R3
10.0k
1953_1b5
RWY
3/04/02
Efficiency Data
Vin
3.2999
2.9939
3.2992
3.6030
Iin
0.056
3.477
3.149
2.888
Vout
1.5121
1.5097
1.5091
1.5103
Iout
0
6.003
6.003
6.003
Efficiency
0.870
0.872
0.871
BILL OF MATERIALS
3.0V to 3.6V Input
1.5V @ 6A Output
3/05/02
1953_1b5
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5,C6
1
4
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
0.1A 30V Schottky diode (SOT-23)
Fairchild FDS6898A
12V input, 2.5V/20A output application: (VDDQ)

5V
VL
R3
20k
12V
R2
5.11k
POK
D1
CMPSH-3
POK
VL
V+
BST
DDR
EN/HSD
Q3
2N7002K
R6
10k
C7
0.22uF/10V
R1
400k
DL
ILIM
PGND
GND
Q1
IRF7822
L1
1.0uH/30A
REF
FSEL
C2
2X470uF
16V
VTT
VTTR
Q2
2XIRF7822
C1
10uF
16V
2.5V at
20A
VOUT
LX
MAX1916
SDN
R6
10k
DH
C4
0.47uF
10V
VIN
C3
4.7uF
6.3V
R3
15k
1%
R4
10k
1%
C5
C6
4X560uF 10uF
4V
6.3V
PGND
VL
This circuit has been tested in the lab. The efficiency is about 88.5% at 20A output current. It
should be noted that the prototype of this circuit is modified from the 7A VTT EV kit. The copper is
only 1 Oz and the bottom two MOSFETs are stacked on top of each other due to single MOSFET
layout. For a better layout, the efficiency will be better.
The main component part numbers are:

L1: HM73-301R0, 1uH/23A,
C6: OS-CON, 4SP560M,
C2: OS-CON, 16SG470M.
6/19/02
From: Sudha Durvasula
MAX1917
Input: +2.25V to +2.75V; 12V available for V+ supply to chip
Output: 1.25V (+/-3%); Maximum load=7A
Bill of Materials:
DESIGNATION
QTY DESCRIPTION
C1, C2, C3
10 uF 25V ceramic capacitor

C6, C7, C8, C9
4
270 F 2V 15 m Al electrolytic capacitors
Panasonic EEFUE0E271R
C10, C11
2
10 uF 6.3V ceramic capacitors
C12
1
0.47 F, 25V ceramic capacitor
C13, C14
2
0.47F, 6.3V ceramic capacitors (0603)
C15
1
4.7 F 6.3V ceramic capacitor
TAIYO YUDEN JMK212BJ475MG
C16, C17
2
1 F 6.3V ceramic capacitor
TAIYO YUDEN JMK107BJ105MA
D1
1
100 mA 30V Schottky diode
Central Semiconductor CMPSH-3
L1
1
0.8H (16A) Inductor
Sumida CDEP105L-0R8
N1, N2
2
N-channel MOSFETs, 30V (RDS(ON) =9m
@VGS=4.5V)
International Rectifier IRF7811W
Q1
1
N-channel MOSFET (SOT23)
Central Semiconductor 2N7002
R1
1
54.9 k, 1% resistor ( 0805)
R2
1
5.1 k, 5% resistor ( 0805)
R3
1
100 k, 5% resistor ( 0805)
R4, R9
2
Short
R6
1
10 k, 5% resistor ( 0805)
R7
1
10 k, 1% resistor ( 0805)
R8
1
2.49 k, 1% resistor ( 0805)
R10
1
20 k, 1% resistor ( 0805)
JU2
1
2 pin header
J1
1
Scope probe connector
U1
1
MAX1917EEE (16 pin QSOP)
EFFICIENCY MEASUREMENTS:
Vbias V
Ibias A
12
12
12
0.015
0.016
0.015
12
12
12
0.028
0.028
0.028
Vin V
Iin A
Vout V
JU2 not installed (freq. = 300kHz)
2.2471
4.266
1.2344
2.4963
3.849
1.2354
2.7589
3.489
1.2364
JU2 installed (freq. = 550kHz)
2.2457
4.319
1.2266
2.5012
3.884
1.2271
2.7463
3.537
1.2278
Iout A
Eff. %
7
7
7
88.48
88.24
88.26
7
7
7
85.56
85.46
85.52
Output Ripple: 10 mV max.

Foldback Current Limit: Peak inductor current is limited to maximum of 2.05A in the event of a short at output.
Schematics:
6/19/2002 - Sudha Durvasula

+2.25V - +2.75V to 1.25V @7A. This uses the MAX1917. It also has foldback currnet
limiting.
Q1
2N7002
Vin
+2.25V
to+2.75V
EN
V+
+12V
R6
10k
C12
0.47 uF
Schottky
Central
CMPSH- 3
R2
5.1k
D1
11
JU4
To
VOUT
R10
20k JU3
Float = 300kHz
GND=550 kHz
10
R1
54 .9k
JU2
R3
R9
100k
VL
V+
5 ILIM
C14
6 FSEL
3
POK
16
LX
U1
MAX1917 12
2 DDR
L1
Sumida CDEP105L
N2
IRF7811W
C15
PGND13
4.7uF
10V
GND
8
VTT 4
VTTR
9
C13
C16
0.47 uF
1 uF (10V)
R4
short
0.8uH
DL
7 REF
10uF,25V
Taiyo Yuden
TMK432BJ106KM
N1
IRF7811W
0.47
uF
short
C17
1 uF
C1(3x)
1
EN/HSD 14
BST
DH 15
R8
2.49k
1%
R7
10k
1%
2.5V@10
C6-C9 (4x)
C10-C11
270uF
10uF,6.3V
2V
Taiyo Yuden
Panasonic JMK212BJ106M
SPcap
MAX1917 Application Circuits
12/28/01
Generate DDR Memory Termination Voltages with MAX1917 using 3.3V Supply
I.
If the input voltage of the 2.5V or 1.5V dc-dc converter is 5V and is on the same board where
MAX1917 is located, use the following schematics for both 1.25V and 0.75V applications.
5V
V+
Customer's logic
level, 5V max
R2
5.1k
2.5V or
1.5V
VIN
R3
20k
POK
POK
2.5V or 1.5V
Reference Input
DDR
VL
V+
C9
0.47uF/10V
BST
DDR
DH
EN/HSD
LX
D1
CMPSH-3S
C4
0.22uF
10V
Q3
2N7002K
REF
DL
ILIM
PGND
FSEL
VTT
GND
VTTR
C2
2X220uF
4V
1.25V/3.5A
or 0.75V/3.5A
Q1
Si4808DY
C8
0.47uF/10V
R1
348k
C1
1uF
6.3V
VOUT
L1
0.68uH/5A
MAX1916
SDN
C3
4.7uF
6.3V
C5
10uF
6.3V
C6
3X270uF
2V
PGND
VTTR
C7
1uF/6.3V
Figure 1 Schematics with 5V V+ supply available.
Table I: Bill of Materials:

Comp.
Description
C1, C7
1.0uF/6.3V ceramic capacitor, JMK107BJ105MA
C2
2X220uF/4V POSCAP, 4TPA220M, or
2X330uF/6V tantalum capacitor, T510X337M006AS
C3
4.7uF/10V ceramic capacitor, LMK316BJ475ML
C4, C8
0.47uF/10V ceramic capacitor, LMK107BJ474MA
C5
10uF/6.3V ceramic capacitor, JMK316BJ106ML
C6
3X270uF polymer caps (Panasonic EEFUE0E271R)
C9
0.47uF/25V ceramic capacitor, TMK316BJ474ML
D1
30V/100mA Schottky diode, CMPSH-3S
L1
0.68uH/9A, DO3316P681HC (esr, 5m max)
Q1
Si4808DY or Si4830DY
R1
348k, 1%
R2
5.1k, 5%
R3
20k, 5%
IC1
MAX1917
Comments
Taiyo Yuden
SANYO
Kemet
Taiyo Yuden
Taiyo Yuden
Taiyo Yuden
Panasonic
Taiyo Yuden
Central Semi.
Coilcraft
Vishay Siliconix
MAXIM
II.
12/28/01
If the input voltage of the 2.5V or 1.5V dc-dc converter is 3.3V and is on the same board where
MAX1917 is located, and also if the LX switching node is accessible, use the following schematics for
both 1.25V and 0.75V applications. D2, C10 and C11 form a voltage doubler to double the 3.3V input
voltage to feed the V+.
3.3V
VIN
VDD Supply
Converter
D2
CMPSH-3S
C10
0.47uF
10V
Voltage doubler
VDD=2.5V or 1.5V
VDD Supply
Controller
VOUT
LX
switching node
PGND
C11
0.47uF
10V
Customer's logic
level, 5V max
R2
5.1k
2.5V or
1.5V
VIN
R3
20k
POK
POK
2.5V or 1.5V
Reference Input
DDR
VL
V+
C9
0.47uF/10V
BST
DDR
DH
EN/HSD
D1
CMPSH-3S
C4
0.22uF
10V
C3
4.7uF
6.3V
LX
Q3
2N7002K
C8
0.47uF/10V
R1
348k
REF
DL
ILIM
PGND
FSEL
VTT
GND
VTTR
C2
2X220uF
4V
1.25V/3.5A
or 0.75V/3.5A
VOUT
L1
0.68uH/5A
MAX1916
SDN
C1
1uF
6.3V
Q1
Si4808DY
C5
10uF
6.3V
C6
3X270uF
2V
PGND
VTTR
C7
1uF/6.3V
Figure 2 Schematics with a voltage doubler from the 2.5V or 1.5V dc-dc converter.
Table II: Additional Bill of Materials over schematics in Figure 1:

Comp.
Description
C10, C11
0.47uF/10V ceramic capacitor, LMK107BJ474MA
D2
30V/100mA Schottky diode, CMPSH-3S
Comments
Taiyo Yuden
Central Semi.
III.
12/28/01
If the input voltage of the 2.5V or 1.5V dc-dc converter is 3.3V the switching node, LX, is not
accessible, a charge pump, such as MAX1683, should be used to double the 3.3V input voltage to
supply V+ of the MAX1917. Following schematic shows the MAX1917, together with MAX1683,
operates from 3.3V input.
MAX1683EUK
GND
C1+
C10
10uF
6.3V
OUT
C1-
C11
10uF
10V
Customer's logic
level, 5V max
3.3V
IN
VIN
R2
5.1k
2.5V or
1.5V
VIN
R3
20k
POK
POK
2.5V or 1.5V
Reference Input
DDR
VL
V+
C9
0.47uF/6.3V
D1
CMPSH-3
BST
DDR
C4
0.22uF
10V
DH
EN/HSD
C3
4.7uF
6.3V
LX
Q3
2N7002K
REF
DL
ILIM
PGND
C8
0.47uF/10V
R1
100k
FSEL
VTT
GND
VTTR
C2
330uF
4V
1.25V/3.5A
or 0.75V/3.5A
VOUT
L1
0.68uH/5A
MAX1916
SDN
C1
1uF
6.3V
Q1
Si4808DY
C5
1uF
6.3V
C6
3X270uF
2V
PGND
VTTR
C7
1uF/6.3V
Figure 3 Schematics with MAX1683 charge pump to generate V+ supply for MAX1917.
Table III: Additional Bill of Materials over Figure 1:

Comp.
Description
C10
10uF/6.3V ceramic capacitor, JMK316BJ106ML
C11
10uF/10V ceramic capacitor, LMK325BJ106MN
IC2
MAX1683
Comments
Taiyo Yuden
Taiyo Yuden
MAXIM
2/25/02
MAX1954 Optimized for 20A

Input: 12V (+/-10%)
Output:1.8V (+/-5%); Maximum load=20A
Bill of Materials:
DESIGNATION
Cc2
Cc
C1, C2
QTY
1
1
2
C3-C4
C5-C6
C7
C8-C11
C12
D1
N1, N2
Rc
R1
R2
U1
1
1
1
1
DESCRIPTION
100 pF ceramic capacitor (0603)
2200 pF ceramic capacitor (0603)
1F 10V ceramic capacitor
10 F 25V ceramic capacitor s
TAIYO YUDEN TMK432BJ106MM
1000 F 16V electrolytic capacitor
Rubycon 16MBZ1000M8X20
0.1 F ceramic capacitor
1800 F 6.3V 19m ESR capacitors
Rubycon 6.3MBZ1800M8X20
10 F 6.3V ceramic capacitor s
TAIYO YUDEN JMK316BJ106ML
Schottky diode
Nihon EC10QS03L
1.55 H Inductor (Two in Parallel)
Provided by customer
N-channel MOSFETs, 30V 5m ON resistance
International Rectifier IRF7822
301 k, 1% resistor ( 0805)
10 k, 1% resistor ( 1206)
8.06 k, 1% resistor ( 0805)
MAX1954EUB (10 pin Max)
Efficiency Measurements:
VBATT (V) IBATT(A) Vbias(V)
Ibias(mA) VOUT(V)
IOUT(A)
Eff%
13.18
0.2065
5.001
19
1.792
1.03
13.19
0.7947
5
20
1.791
5.03
13.19
1.5693
5
24
1.784
10.02
13.19
2.3908
4.999
25
1.779
15.02
13.19
3.2307
4.999
28
1.726
20.01
12.06
0.2205
5.001
19
1.792
1.03
12.07
0.8598
5
20
1.791
5.03
12.05
1.7129
5
24
1.787
10.02
12.03
2.624
4.999
25
1.782
15.02
12.03
3.5565
4.999
27
1.744
20.01
10.8
0.2437
5.001
19
1.791
1.03
10.8
0.9544
5
20
1.792
5.03
10.8
1.9
4.999
23
1.793
10.02
10.8
2.8985
4.999
24
1.785
15.02
10.8
3.9717
4.999
26
1.765
20.01
66
85
86
84
81
67
86
86
84
81
68
87
87
85
82
Schematics:
+12V (+/-10%) to 1.8V @20 A. This uses the MAX1954.
VCC
+5V
Vin
+12V
Schottky
Nihon
EC10QS03L
5
IN
LX 9
U1
MAX1954 6
DL
1uF
10V
RC
SHDN
301k
1%
2200pF
PGND 7
GND
CC
CC2
100 pF
C7
FB
C5-C6
1000uF(2x)
16V
Rubycon
16MBZ1000M8X20
VOUT
1.8V@20A
0.1
uF
(Two 1.55 uH in parallel)

0.78 uH
N2
IRF7822
C2
2 COMP/
C1
C3-C4
10uF(2x)
N1
25V
IRF7822 Taiyo Yuden
TMK432BJ106MM
HSD 10
BST
DH
1uF
10V
C8-C11
1800uF(4x)
6.3V
Rubycon
6.3MBZ1800M8X20
R1
10k
1%
R2
8.06k
1%
C12
10uF
6.3V
Taiyo Yuden
JMK316BJ106ML
MAX1917 Applications
22V MAX Input
22Vmax/3A peak, -1.5A to 1.5A transient VTT supply application circuit: (minor change needed
for higher input voltage)
(Low shutdown input current, less than 10uA)
Pull-up Logic,
5.5V max
R3
100k
EN
POK
R4
10k
R2
5.6k
5V
10
VDDQ
VL
Q3
Si1029XV
R9
100k
R5
20
VL 11
POK
V+
BST 14
DDR
DH 15
C5
1uF
6.3V
1
C6
0.1uF
6.3V
VL
R1
OPEN*
6
8
C3
0.47uF/6.3V
C1
10uF
25V
MAX1917
ILIM
GND
Q1
IRF7811W
1.25V/3A
16
L1
2.8uH/6A
Q2
IRF7811W
DL 12
PGND
5
C2
4.7uF
10V
EN/HSD
LX
R8
10k
D1
CMPSH-3
22V max
VTT
FSEL
REF
GND
VTTR
R10
0.009
0.125W
1%
C4
270uF*
2.5V
13
GND
4
7
9
C7
1uF/6.3V
VTTR
C8
0.47uF
6.3V
R6
249k
1%
R7
7.87k*
1%
* The value of R7 may change due to new output inductor.

* In the real applications, need only one 270uF capacitor. However, 2 caps are need to meet JEDEC requirement, for -3A to 3A and 3A, 20A/us load current slew rate, but not the real applicatoins.
* R1 value de;ends on the MOSFET chosen, see datasheet for equation to determine R1 value.
Please note that if R1 is used, ILIM should be disconnected from VL.
Please note:
1.
2.
3.
Rui Liu
Higher Rdson MOSFET can be used instead of IRF7811W. For example 20m Rdson
MOSFET can be used if the average current is about 1A.
Cannot use 10uH inductance. The output voltage deviation at transient response, from
1.5A to 1.5A will not meet JEDEC specification. The maximum voltage deviation is more
than 100mV during this transient. If customer used this inductor before and no problem
generated, then the 10uH inductor can be used and a 9m droop resistor should be used
to stable the operation. MAX1917 uses Quick PWM control architecture. There is no error
voltage amplifier; therefore there are no compensation components.
The output ripple voltage is about 20mV peak to peak. However, with droop resistor
(R10) we meet JEDEC spec for 1.5A to 1.5A to 1.5A load transients with 20A/us load
slew rate. It should be pointed out that the lower load current slew rate, the smaller the
voltage deviation.
3/5/02
MAX1917 Applications
22V MAX Input
Following waveforms are taken from the transient responses:
Figure 1 Transient response from 1.5A to 1.5A to 1.5A at 20A/us load current slew rate.
Meet JEDEC load transient requirement with margin, using 9m droop resistor (R10).
Figure 2 Transient response from 1.5A to 1.5A to 1.5A at 20A/us load current slew rate.
Meet JEDEC load transient requirement with no margin, using 4m droop resistor (R10).
Rui Liu
3/5/02
Servers
Input: +11.4V to +12.6V Output: 5V (+/-5%); Maximum load=10A
5/1/02 - Sudha Durvasula
+11.4V - +12.6V to 5V @10 A. This uses the MAX1917.
This circuit has not been tested.
VCC
+5V
R1
1
Vin
+11.4V
to+12.6V
Schottky
Central
CMPSH-3
D1
11
10
VL
C5(2x)
EN/HSD
V+
BST
DH 15
6 FSEL
150uF
20V
Sanyo OSCON
20SEP150M
14
N1
IRF7822
C3
ILIM
LX 16
U1
MAX1917 DL 12
L1
0.47
uF
1.4uH
POK
C8 (3x)
2 DDR
C1
D2
CMSH5-40
N2
IRF7822
7 REF
PGND 13
4.7uF
10V
VOUT
5V@10A
Sumida CEP125V
680uF
10V
Sanyo
10MV680EXR
R2
40.2k
1%
VTT 4
GND
8
VTTR
9
C2
C4
0.47 uF
1 uF (10V)
R3
10k
1%
Bill of Materials:
DESIGNATION
C1
QTY
1
C2, C3
C4
2
1
C5
C8
D1
D2
L1
N1, N2
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
4.7 F 10V ceramic capacitors
TAIYO YUDEN LMK316BJ475ML
0.47F ceramic capacitor (0805)
1 F 10V ceramic capacitors
TAIYO YUDEN LMK212BJ105MG
150 F 20V organic semiconductor capacitors
Sanyo 20SEP150M
680 F 10V aluminum electrolytic capacitors
Sanyo 10MV680EXR
100 mA 30V Schottky diode
5A Schottky diode
Central Semiconductor CMPSH5-40
1.4 H (20.8A) Inductor
Sumida CEP125V-1R4
N-channel MOSFET, 20V (RDS(ON) =5m
@VGS=4.5V)
1, 5% resistor ( 0805)
40.2 k, 1% resistor ( 0805)
10 k, 1% resistor ( 0805)
Base Station
3.0V to 3.6V
INPUT
1
R1
82k
C4
22uF
6V
(2x)
D1
CMPSH-3
C2
4.7uF
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
180pF
DH
10
C3
0.1uF
N1A
1/2
FDS
6898A
L1
0.68uH
DO3316P
-681HC
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6898A
6
7
C5
680pF
1.8V@6A
C6
22uF
6V
(2x)
R2
12.7k
R3
10.0k
1953_1b8
RWY
3/28/02
MAXIM CONFIDENTIAL
Vin
3.3050
2.9930
3.3126
3.6073
Iin
0.029
4.038
3.645
3.346
Vout
1.8053
1.8018
1.8022
1.8016
20mVpp
Iout
0
6.006
6.007
6.007
Efficiency
0.895
0.896
0.896
BILL OF MATERIALS
3.0V to 3.6V Input
1.8V @ 6A Output
3/28/02
1953_1b8
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
4
C5
D1
1
1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Taiyo Yuden JMK325BJ226MN
0.68uH 13A Inductor
Fairchild FDS6898A
Ink jet printer

3.3V
INPUT
C2
4.7uF
10V
X5R
1
ILIM
R1
33k
D1
CMPSH-3
5
IN
BST
COMP
U1
MAX1953
C1
390pF
DH
C4
22uF
10V
X5R
10
C3
0.1uF
N1A
1/2
FDS
8926A
L1
2.2uH
DO1813P
-222HC
1.0V@1.5A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
8926A
6
7
R2
2.49k
R3
10.0k
1953_1v
RWY
4/15/02
MAXIM CONFIDENTIAL
This circuit has not been built and some tweaking may be necessary.
C5
22uF
6V
X5R
BILL OF MATERIALS
3.3V Input
1.0V @ 1.5A Output
4/15/02
1953_1v
DESIGNATION
C1
C2
QTY
1
1
C3
C4
1
1
C5
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
22uF 10VX5R ceramic capacitor (1812)
Fairchild FDS8926A
LAN access point

3.0V to 3.6V
INPUT
D1
CMPSH-3
1
R1
62k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
390pF
DH
C3
10uF
10V
10
C2
0.1uF
N1
1/2
Si9926A
L1
3.3uH
DS1608C
-332
LX
DL
PGND
GND
FB
N1
1/2
Si9926A
R2
12.4k
R3
10.0k
1953_1v8
RWY
12/21/01
MAXIM CONFIDENTIAL
This circuit has not been built and some tweaking may be necessary.
1.8V@0.8A
C4
10uF
10V
(2x)
BILL OF MATERIALS
3.0V to 3.6V Input
1.8V @ 0.8A Output
12/21/01
1953_1v8
DESIGNATION
C1
C2
C3,C4
QTY
1
1
3
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Nihon EC31QS03L
3.3uH 1.2A Inductor
Coilcraft DS1608C-332
Siliconix Si9926ADY
Network card
4.5V to 5.5V
INPUT
C2
4.7uF
10V
X5R
1
ILIM
R1
68k
D1
CMPSH-3
5
IN
BST
COMP
U1
MAX1953
C1
220pF
DH
C4
22uF
6V
X5R
10
C3
0.1uF
N1A
1/2
FDS
6930A
L1
1.5uH
DS3316P
-152
2.5V@3A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6930A
6
7
C5
22uF
6V
X5R
R2
21.5k
R3
10.0k
1953_2d5
RWY
4/30/02
MAXIM CONFIDENTIAL
Vin
Iin
5.0037
0.016
4.4966
1.855
5.0040
1.666
5.507
1.514
Vout
2.4720
2.4674
2.4637
2.4603
14mVpp
Iout
Efficiency
3.014
3.014
3.014
0.891
0.890
0.889
BILL OF MATERIALS
4.5V to 5.5V Input
2.5V @ 3A Output
5/01/02
1953_2d5
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C5
1
2
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Fairchild FDS6930A
Desktop/Server
4.5V to 5.5V
INPUT
D1
EC10QS03L
C3
4.7uF
10V
1
R1
22k
C1
1.2nF
5
IN
ILIM
BST
COMP
U1
MAX1953
C2
220pF
DH
C5
22uF
10V
(3x)
10
C4
0.1uF
N1
IRF
7822
L1
0.36uH
CDEP105L
-0R3
2.5V@10A
LX
DL
PGND
GND
FB
N2
IRF
7822
C6
2.2nF
C7
1000uF
4V
(2x)
R2
21.5k
R3
10.0k
1953_2v5
RWY
2/26/02
MAXIM CONFIDENTIAL
Vin
5.0005
4.5000
4.9955
5.512
Iin
0.084
6.234
5.633
5.115
Vout
2.5210
2.5265
2.5255
2.5204
65mVpp
Iout
0
10.0
10.0
10.0
Efficiency
0.900
0.897
0.894
BILL OF MATERIALS
4.5V to 5.5V Input
2.5V @ 10A Output
2/26/02
1953_2v5
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5
1
3
C6
C7
1
2
D1
L1
N1,N2
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo 4MV1000EXR
Nihon EC10QS03L
0.36uH 12A Inductor
Sumida CDEP105L-0R3
6.5m Ohm 30V N-ch MOSFET (SO-8)
Base station
4.75V to 5.25V
INPUT
D1
CMPSH-3
C3
4.7uF
10V
X5R
1
R1
62k
C1
180pF
5
IN
ILIM
BST
COMP
U1
MAX1953
C2
22pF
DH
C5
10uF
10V
X5R
(2x)
10
C4
0.1uF
N1A
1/2
FDS
8926A
L1
1.2uH
DO1813P
-122HC
3.3V@4A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
8926A
6
7
C6
1nF
C8
22nF
C7
22uF
6V
X5R
R2
31.6k
R3
10.0k
1953_3b3
RWY
4/17/02
MAXIM CONFIDENTIAL
Vin
5.0002
4.4955
4.7476
5.0081
5.2502
5.501
Iin
0.044
3.212
3.041
2.882
2.752
2.630
Vout
3.3082
3.3023
3.2899
3.2813
3.2780
3.2761
90mVpp
Iout
0
4.00026
4.0027
4.0027
4.0027
4.0027
Efficiency
0.915
0.912
0.910
0.908
0.906
BILL OF MATERIALS
3.3V @ 4A Output
4/17/02
1953_3b3
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5
1
2
C6
C7
1
1
C8
D1
1
1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
1.2uH 5A Inductor
38m Ohm 30V Dual MOSFET (SO-8)
Fairchild FDS8926A
Base station
4.5V to 5.5V
INPUT
D1
EC10QS03L
C3
4.7uF
10V
X5R
1
R1
1.5M
C1
390pF
5
IN
ILIM
BST
COMP
U1
MAX1953
C2
DH
C5
22uF
10V
X5R
(3x)
10
C4
0.1uF
N1
IRF
7822
L1
0.5uH
CDEP105H
-0R5
3.3V@10A
LX
DL
PGND
GND
FB
N2
IRF
7822
C6
2.2nF
R2
31.6k
C7
820uF
6V
EXR
(2x)
R3
10.0k
1953_3v3
RWY
3/12/02
MAXIM CONFIDENTIAL
Vin
5.0044
4.4845
5.0020
5.515
Iin
0.088
7.979
7.172
6.521
Vout
3.119
3.3112
3.3082
3.3040
50mVpp
Iout
0
10.043
10.042
10.042
Efficiency
0.929
0.926
0.922
BILL OF MATERIALS
4.5V to 5.5V Input
3.3V @ 10A Output
3/12/02
1953_3v3
DESIGNATION
C1
C2
C3
QTY
1
0
1
C4
C5
1
3
C6
C7
1
2
D1
L1
N1,N2
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo 6MV820EXR
Nihon EC10QS03L
0.5uH 12A Inductor
Sumida CDEP105L-0R5
1.5M Ohm 5% resistor (0603)
Set top box

3.0V to 3.6V
INPUT
C5
680uF
10V
MV-AX
(2x)
D1
CMPSH-3
C1
1uF
10V
R1
150k
C2
1nF
IN
BST
COMP
C3
180pF
U1
MAX1966
DH
LX
DL
GND
FB
C4
0.1uF
N1
1/2
FDS
8926A
5
6
L1
10uH
DO5022P
-103HC
1.8V@3A
C7
680uF
10V
MV-AX
(3x)
R2
10.5k
R3
8.25k
1966_1b8
RWY
4/09/02
Vin
3.3017
2.9960
3.2942
3.6140
N1
1/2
FDS
8926A
C6
4.7uF
10V
X5R
Iin
0.037
2.055
1.872
1.708
Vout
1.822
1.817
1.818
1.817
25mVpp
Iout
0
3
3
3
Efficiency
0.885
0.884
0.883
BILL OF MATERIALS
3.0V to 3.6V Input
1.8V @ 2A Output
4/11/02
1966_1b8
DESIGNATION
C1
QTY
1
C2
C3
C4
C5,C7
1
1
1
5
C6
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo 10MV680AX
10uH Power inductor
Dual N-channel MOSFET (SO-8)
Fairchild FDS8926A
DDR RAM VDDQ Supply

3.135V to 3.465V
INPUT
D1
CMPSH-3
C1
1uF
10V
R1
180k
C2
1.5nF
C3
18pF
IN
BST
COMP
U1
MAX1966
DH
C5
820uF
6V
EXR
(2x)
C4
0.1uF
N1
Si
4866DY
C6
22uF
6V
X5R
2.5V@10A
7
LX
DL
GND
N2
Si
4866DY
5
6
D2
EC31
QS02L
C8
3.9nF
FB
C7
1000uF
4V
EXR
(2x)
R2
21.5k
R3
10.0k
1966_2d5
RWY
4/18/02
Vin
3.3037
3.1030
3.3027
3.5023
L1
3.3uH
DO5022P
-332HC
Iin
0.027
8.833
8.336
7.892
Vout
2.5208
2.5477
2.5567
2.5642
50mVpp
Iout
0
10.020
10.020
10.020
Efficiency
0.931
0.930
0.929
BILL OF MATERIALS
2.5V @ 10A Output
4/18/02
1966_2d5
DESIGNATION
C1
QTY
1
C2
C3
C4
C5
1
1
1
2
C6
C7
C8
D1
1
1
D2
L1
N1,N2
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo 6MV820EXR
Sanyo 4MV1000EXR
Nihon EC31QS02L
3.3uH Power inductor
8.5m Ohm N-channel MOSFET (SO-8)
Siliconix Si4866DY
Line Card
4.5V to 5.5V
INPUT
D1
CMPSH-3
C1
1uF
10V
R1
160k
C2
1.5nF
BST
IN
COMP
U1
MAX1966
DH
LX
DL
GND
FB
C3
0.1uF
N1
1/2
NDS
9956A
L1
22uH
CDRH104R
N1
1/2
NDS
9956A
5
6
2.5V@0.5A
C5
470uF
6V
MV-AX
(2x)
R2
21.5k
R3
10.0k
1966_2v5
RWY
2/1/02
Vin
5.001
4.484
5.002
5.519
C4
330uF
10V
MV-AX
Iin
0.0056
0.2972
0.2671
0.2427
Vout
2.5294
2.5201
2.5195
2.5188
50mVpp
Iout
0
0.5024
0.5024
0.5024
Efficiency
0.950
0.947
0.945
BILL OF MATERIALS
4.5V to 5.5V Input
2.5V @ 0.5A Output
2/1/02
1966_2v5
DESIGNATION
C1
QTY
1
C2
C3
C4
1
1
1
C5
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo 10MV330AX
Sanyo 6MV470AX
22uH Power inductor
Sumida CDRH104R-220
Fairchild NDS9956A
Alphanumeric display
4.5V to 5.5V
INPUT
D1
CMPSH-3
C1
1uF
10V
R1
120k
C2
1.8nF
C3
22pF
IN
BST
COMP
U1
MAX1966
DH
C5
220uF
10V
OS-CON
C4
0.1uF
N1A
1/2
FDS
6890A
7
LX
DL
GND
C6
22uF
6V
X5R
N1B
1/2
FDS
6890A
5
6
D2
EC31
QS02L
C8
2.2nF
FB
3.3V@8A
C7
820uF
6V
EXR
R2
31.6k
R3
10.0k
1966_3v3
RWY
4/23/02
Vin
5.0056
4.4994
4.9953
5.510
L1
6uH
DO5022P
-602HC
Iin
0.027
6.550
5.899
5.346
Vout
3.3215
3.3063
3.2981
3.2881
60mVpp
Iout
0
8.009
8.009
8.009
Efficiency
0.898
0.896
0.894
BILL OF MATERIALS
4.5V to 5.5V Input
3.3V @ 8A Output
4/23/02
1966_3v3
DESIGNATION
C1
QTY
1
C2
C3
C4
C5
1
1
1
1
C6
C7
C8
D1
1
1
D2
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo 10SA220M
Sanyo 6MV820EXR
Nihon EC31QS02L
6uH Power inductor
18m Ohm Dual N-channel MOSFET (SO-8)
Fairchild FDS6890A
Set top box

10.8V to 13.2V
VIN
C2
0.1uF
C3
2.2uF
10V
4
R1
200k
C1
680pF
D1
CMPSH-3
3
VCC
5
VL
BST
IN
COMP
U1
MAX1967
DH
LX
DL
GND
FB
C6
47uF
25V
SC
10
C4
0.1uF
L1
15uH
DO5022P
-153HC
N1
1/2
FDS
6990A
N1
1/2
FDS
6990A
6
7
2.5V@5A
VOUT
C7
820uF
6V
MV-EXR
R2
21.5k
C5
680pF
R3
10.0k
1967_2b5
RWY
2/19/02
Vin
10.866
10.783
12.009
13.222
Iin
0.011
1.313
1.182
1.076
Vout
2.5246
2.4630
2.4588
2.4555
50mVpp
Iout
0
5.0023
5.0024
5.0024
Efficiency
0.870
0.866
0.863
BILL OF MATERIALS
2.5V @ 5A Output
2/19/02
1967_2b5
DESIGNATION
C1,C5
C2,C4
C3
QTY
2
2
1
C6
C7
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo OS-CON 25SC47M
Sanyo 6MV820EXR
Fairchild FDS6990A
Cable modem
10.5V to 13.5V
INPUT
C2
0.1uF
C3
2.2uF
10V
4
R1
220k
C1
1nF
D1
CMPSH-3
3
VCC
5
VL
BST
IN
COMP
U1
MAX1967
DH
LX
DL
GND
FB
10
C4
0.1uF
N1
1/2
NDS
9956A
L1
47uH
PCV-0473-03
N1
1/2
NDS
9956A
6
7
3.3V@0.75A
C6
470uF
6V
MV-AX
R2
31.6k
R3
10.0k
1967_3a3
RWY
1/29/02
Vin
10.48
10.47
12.00
13.53
C5
470uF
16V
MV-AX
Iin
0.0108
0.2578
0.2262
0.2018
Vout
3.3380
3.3165
3.3121
3.3083
50mVpp
Iout
0
0.7510
0.7510
0.7509
Efficiency
0.923
0.916
0.910
BILL OF MATERIALS
3.3V @ 0.75A Output
1/29/02
1967_3a3
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5
C6
D1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
Sanyo 16MV470AX
Sanyo 6MV470AX
Coilcraft PCV-0-473-03
Fairchild NDS9956A
MAX8597 for Fan Control

Date: 12/232004
BOM REV: 1
SCHEMATIC REV: 1
BOARD REV: P1
VIN (10.8V to 13.2V)

R2
20k
R21
3.0
EN
R11
69.8k
C11
0.1uF
C17
0.033uF
18
AOUT
R10
34k
R15
100k
16
DL
R6
3.9k
C9
2200pF
Q2
1/2FDS6892
PGND
GND
AVL
REFO VL
1
C16
0.22uF
COMP
6
C10
2.2pF
R35
3.0
C13
0.22uF
11
12
FB
R9
18k
14
LX 15
5
R8
6.04K
R7
102k
17
DH
SS
R14
69.8k
C3
10uF
BST
AIN+
C7
0.01uF
R3
1.13k
13
20
MAX8597
R13
1k
D1
CMDSH-3
ILIM
AIN-
FREQ
19
EN
R12
100k
(0V to 3.3V:200kHz PWM)
REFIN
AVL
Vadj.
VL
C14
1uF
V+
ON
OFF
8 10
R1
10
C12
1uF
C8
82pF
N1
1/2FDS6892
Vout
5V to 12V/2.5A
L1
3.3uH
R34
2.0
C4
22uF
C36
1000pF
C6
4.7uF
VL
MAX8597 (1MHz) : Vin = 10.8V to 13.2V, Vout = 5V to 12V Live Adjustable, Iout = 2.5A
MAX8597 BOM
DESIGNATION
C3
QTY
1
C4
C6
C7
C8
C9
CN
DESCRIPTION
10F 35V X5R Ceramic Capacitor (1210)
Taiyo Yuden GDK325BJ106KN
Or Equivalent
22F 16V X5R Ceramic Capacitor (2220)
TDK C3225X5R1C226MT
Or Equivalent
4.7F 10% 6.3V X5R Ceramic Capacitor (0603)
TDK C1608X5R0J475K
Or Equivalent
0.01F 10% 25V X7R Ceramic Capacitor (0402)
Murata GRP155R71E103K
Or Equivalent
82pF 5% 50V C0G Ceramic Capacitor (0402)
TDK C1005C0G1H820J
Or Equivalent
2200pF 10% 25V X7R Ceramic Capacitor (0603)
TDK C1608X7R1E222KT
Or Equivalent
1 of 7
12/23/04
C10
JU1, JU2
See Table for

Shunt Locations
U1
2.2pF 50V C0G Ceramic Capacitor (0402)

Murata GJ61555C1H2R2C
Or Equivalent
TDK C1608X7R1E104K
Or Equivalent
1F 10% 10V X7R Ceramic Capacitor (0603)
TDK C1608X7R1A105K
Or Equivalent
Taiyo Yuden LMK107 BJ224KA
Or Equivalent
1F 20% 35V X7R Ceramic Capacitor (1206)
Taiyo Yuden GMK316BJ105ML
Or Equivalent
TDK C1005X7R1C333K
Or Equivalent
1000pF 10% 50V X7R Ceramic Capacitor (0402)
TDK C1005X71H102K
Or Equivalent
10 5% Resistor (0402)
20k 1% Resistor (0402)
1.13k 1% Resistor (0402)
3.9k 5% Resistor (0402)
102k 1% Resistor (0402)
6.04k 1% Resistor (0402)
69.8k 1% Resistor (0402)
100k 1% Resistor (0402)
3 5% Resistor (0805)
30V 100mA Schottky Diode (SOD-323)
Central Semiconductor CMDSH-3
30V N-MOSFET (SO-8 Dual)
Fairchild FDS6892
3.3H 4.1A 17m Inductor
TDK: RLF7030T-3R3M4R1
3-pin Header
36 PIN HEADER 0.01 CENTERS (COMES IN 36
PIN STRIPS, CUT TO FIT)
SULLINS: PTC36SAAN
Shunt
C11
C12
C13, C16
C14
C17
C36
R1
R2
R3
R6
R7
R8
R9
R10
R11, R14
R12, R15
R21
R34
R35
D1
1
1
1
1
1
1
1
1
2
2
1
1
1
1
N1/2
MAX8597ETP
L1
Note: R34 and C36 were moved to near FETs due to changing FETs package to
dual SO-8. R35 is added near pin 15 of MAX8597.
CN
2 of 7
12/23/04
Test results:
1) Output voltage and Efficiency for Vadj. from 0% to 100% duty cycle of
200kHz 3.3V with 4.8 load resistor.
Duty Cycle
Vout
% Efficiency
Vin
Iin
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
5.08
5.85
6.57
7.29
8
8.71
9.43
10.13
10.84
11.55
11.77
82.28
83.06
84.59
86.54
87.67
89.15
90.44
91.53
93.35
94.84
95.74
12.1
12.09
12.08
12.07
12.07
12.06
12.05
12.04
12.03
12.01
12.01
0.54
0.71
0.88
1.06
1.26
1.47
1.7
1.94
2.18
2.44
2.51
Vout vs. Vadj. Duty Cycle

14
12
Vout (V)
10
8
Vout
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1.1
Vadj. Duty Cycle
CN
3 of 7
12/23/04
Efficiency Vs. Output Voltage

98.00
96.00
Efficiency (%)
94.00
92.00
90.00
% Efficiency
88.00
86.00
84.00
82.00
80.00
5
10
11
12
Output Voltage (V)
2) Figure 1 below shows typical waveforms of Vadj., Vout and Iout at ~50%
Duty Cycle: Ch2 = Vout, CH4 = Vadj., CH3 = Iout at 1A/div
CN
4 of 7
12/23/04
3) Below are waveforms taken when the output drives two 12V fans (
Minebea model 4715KL-04W-B49 rated at 12Vdc, 0.9Adc, 120mm x
120mm x 38mm):
Figure 2: Start up at Vadj. = 0V, Vout = 5V. CH2 = Vout, Ch4 = V adj.,
CH3 = Fans Cur rent at 1A/div. Fans ware stop before start up.
Figure3: Start up at Vadj. = 50% DC of 3.3V,200kHz, Vout ~ 8.7V. CH2 =

Vout, Ch4 = V adj., CH3 = Fans Current at 1A/div. Fans ware stopped
before start up.
CN
5 of 7
12/23/04
Figure 4: Start up at Vadj. = 90% D of 3.3V,200kHz, Vout ~ 11.5V. CH2 =

Vout, Ch4 = V adj., CH3 = Fans Current at 1A/div. Fans ware stopped
before start up.
Figure 5: Output Ripple and Noise at Vadj = 0%. CH2 = Vout (AC
couple), Ch4 = V adj., CH3 = Fans Cur rent at 1A/div.
CN
6 of 7
12/23/04
Figure 6: Output Ripple and Noise at Vadj = 100%. CH2 = Vout (AC
couple), Ch4 = V adj., CH3 = Fans Cur rent at 1A/div.
Figure 7: Effective Duty Cycle and Switching Frequency at 20 Cycles

Maximum skip. Vadj =100% (3.3V). CH1 = Vlx, CH2 = Vout , Ch4 = V
adj. Note that Frequency is ~ 1MHz/20 ~ 50kHz, and Effective Duty Cycle
is 99%.
CN
7 of 7
12/23/04
4.75V to 5.25V
VIN
D1
BAT54
C2
4.7uF
10V
X5R
1
R1
47k
ILIM
U1
MAX1953
C7
0.1uF
DH
10
8
9
C3
0.1uF
N1A
1/2
FDS
6930A
R2
4.7
C4
22uF
6V
X5R
(2x)
L1
2.2uH
DO1813P
-222HC
3.3V@2.2A
VOUT
LX
Q2
R7
MMBT
100k
3904
2.5V
BST
COMP
C1
470pF
R6
100k
5
IN
Q1
MMBT
3904
DL
PGND
GND
FB
N1B
1/2
FDS
6930A
6
7
R3
31.6k
R4
10.0k
R5
4.7
C6
22uF
6V
X5R
C5
330pF
VIN
R10
100k
R9
100k
1953_3g3
RWY
3/02/04
R8
220k
Iin
0.0`5
1.64
1.54
1.46
Vout
3.`94
3.252
3.240
3.228
<20mVpp
Iout
0
2.2
2.2
2.2
Q4
MMBT
3904
Q3
MMBT
3904
C8
0.1uF
Vin
5.00
4.72
5.01
5.26
20MHz BW
RESET
Efficiency
0.924
0.924
0.925
BILL OF MATERIALS
3.3V @ 2.2A Output
3/02/04
1953_3g3
DESIGNATION
C1
C2
QTY
1
1
C3,C7,C8
C4,C6
3
3
C5
D1
1
1
L1
N1
Q1,Q2,Q3,Q4
R1
R2,R5
R3
R4
R6,R7,R9,R10
R8
U1
1
1
1
1
4
1
1
DESCRIPTION
BAT54
Fairchild FDS6930A
200mA 40V NPN transistor (SOT-23)
Fairchild MMBT3904
DVD
12.6V to 15.4V
VIN
C3
2.2uF
10V
C2
0.1uF
9
R1
75k
16
VCC
15
VL
IN
BST
COMP
C1
2.2nF
SHDN
D1
CMPSH-3
U1
MAX1967
DH
LX
DL
N2
2N7002
GND
C5
390uF
25V
MV-AX
14
13
C4
0.1uF
N1
1/2
FDS
6930A
12
N1
1/2
FDS
6930A
11
10
L1
22uH
CDRH127
-220
3.3V@2A
VOUT
C6
470uF
6V
MV-AX
(2x)
R2
100k
FB
R4
10.0k
1967_3b3
RWY
2/08/02
Vin
14.033
12.581
14.002
15.422
Iin
0.0095
0.5720
0.5155
0.4697
R3
31.6k
Vout
3.3207
3.2706
3.2714
3.2735
50mVpp
Iout
0
2.001
2.001
2.001
Efficiency
0.909
0.907
0.904
BILL OF MATERIALS
3.3V @ 2A Output
2/08/02
1967_3b3
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5
C6
D1
L1
N1
N2
R1
R2
R3
R4
U1
1
1
1
1
1
1
DESCRIPTION
Sanyo 2MV390AX
Sanyo 6MV470AX
Sumida CDRH127-470
Fairchild FDS6930A
2N7002 (SOT-23)
DESIGNATION
C4-C9
C1-C3
C10,C11,C15
C13,C14,C16
C12
CA
D1
N1,N2
R8
R2
R7
R3
L1
U1
R6
Q1
3.3V Input
1.25V @ 12A Output
04/18/02
QTY DESCRIPTION
6
Cap 270 uF 2.5V SP
Panasonic (EEFUE0E271XR)
3
Cap
180uF 6.3V SP
Panasonic (EEFUE0J181XR)
3
Cap 10uF 6.3V Ceramic X5R 1812,
Taiyo Yuden (JMK212BJ106MG)
3
Cap 0.47uF 10V Ceramic X5R 0603,
Taiyo Yuden (LMK107BJ474KA)
1
Taiyo Yuden (EMK212BJ474MG)
1
Kemet (C0603C104K4RAC)
1
Diode 30V 0.1A Schottky SOT-23,
Centralsemi (CMPSH-3)
2
NFET 0.0065 Ohm 30V SO-8,
International Rectifier (IRF7822)
1
1
1
1
1
Inductor, 0.3uH
Sumida (CDEP105-0R3NC-88)
1
DDR Buss Terminator 16 QSOP,
Maxim (MAX1917EEE)
OPTIONAL PARTS
1
1
NFET SOT-23
Central Semi (2N7002)
12V
V+
GND
3.3V INPUT
VIN
C12
0.47uF
VL
VLOGIC
JU4
JU1
R3
100K
POK
10
3
VL
V+
POK
C15
10uF
6.3V
BST 14
DDR
DH
VIN
R2
5.1K
EN / HSD
D1
CMPSH-3
N1
IRF
7822
15
LX
16
DL
12
PGND
13
C14
0.47uF
EN
Q1
R6
10k
VL
VTT
JU3
C13
0.47uF
FSEL
VTTR
GND
FLOAT= 300KHz
GND = 550KHz
JU2
C16
0.47uF
SM
04/18/02
C4-C9
280uF
2.5V
SP
(6x)
GND
CA
0.1uF
REF
2V
VTTR
VOUT
+1.25V @ 12A
R4
SHORT
C10,C11
10uF
6.3v
(2X)
R8
511
1%
R7
36.5K
1%
REF
L1
0.3uH
N2
IRF
7822
ILIM
R1
OPEN
GND
VL
11
U1
MAX1917
DDR
(2.5V input)
VIN
C1-C3
180uF
6.3V
SP
(3x)
3.0V to 3.6V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
27k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
390pF
DH
C4
22uF
6V
X5R
10
C3
0.1uF
N1
1/2
FDS
8926A
L1
1.2uH
DO1813P
-122HC
1.5V@2A
LX
DL
PGND
GND
FB
N1
1/2
FDS
8926A
6
7
R2
8.87k
R4
2.7
C5
1.2nF
C6
22uF
6V
X5R
R3
10.0k
1953_1l5
RWY
9/30/03
Vin
3.299
2.998
3.306
3.611
20MHz BW
Iin
0.030
1.14
1.03
0.95
Vout
1.5020
1.5017
1.4980
1.4990
<20mVpp
Iout
0
2.004
2.004
2.004
Efficiency
0.881
0.882
0.876
BILL OF MATERIALS
3.0V to 3.6V Input
1.5V @ 2A Output
9/30/03
1953_1l5
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
2
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
1.2uH 5.3A Inductor
38m Ohm 20V N-ch MOSFET (SO-8)
Fairchild FDS8926A
12V INPUT
C5
150uF
25V
MV-AX
C4
4.7uF
10V
10
C1
0.47uF
SHDN
8
VH
V+
EXT
U1
MAX1744
7
3
C2
0.1uF
SHDN
GND
CS
2
RWY
10/5/00
D1
MBR
0520L
L1
47uH
CDRH5D18
REF
OUT
C3
4.7uF
10V
P1
FDC
636P
VL
3/5
6
5
4
+12V into +5V @ 300mA
Notes:
C3,C4 Taiyo Yuden
C5,C6 Sanyo MV-AX series
D1 ON Semiconductor (formerly Motorola)
L1 Sumida CDRH5D18 series
P1 Fairchild Semiconductor
U1 Maxim Integrated Products
This circuit operates at about 200kHz and has about 50mVp-p ripple.
R1
0.2
0.125W
+5V @ 300mA
C6
220uF
10V
MV-AX
3.0V to 3.6V
IN2
C5
4.7uF
6V
1
2
3
JU4
JU5
6
ON
LX 8
PGND
SS
COMP
2
C6
330pF R7
100k
GND
5
1.2V @ 1A
OUT2
R4
6.04k
FB 3
POK
R6
43k
GND2
U2
MAX1974
1 FBSEL
10
1
2
3
IN
L2
3.3uH
C7
4.7uF
6V
7
R5
10.0k
4
C8
0.1uF
JU6
POK
1974_1v2
RWY
5/22/02
MAXIM CONFIDENTIAL
Vin
3.3013
2.9965
3.3034
3.6080
Iin
0.005
0.543
0.488
0.444
Vout
1.2042
1.2034
1.2034
1.2035
15mVpp
Iout
0
1.000
1.000
1.000
Efficiency
0.739
0.746
0.751
BILL OF MATERIALS
3.0V to 3.6V Input
1.2V @ 1A Output
5/22/01
1974_1v2
DESIGNATION
C5,C7
QTY
2
C6
C8
L2
R4
R5
R6
U2
1
1
1
1
DESCRIPTION
Taiyo Yuden JMK212BJ475KG
Murata GRM39C0G331J050AD
Taiyo Yuden EMK107BJ104KA
3.3uH 1.1A Power inductor
Sumida CDRH3D16-3R3
3.135V to 3.465V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
68k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
180pF
DH
10
C3
0.1uF
N1A
1/2
FDS
8926A
C4
22uF
6V
X5R
(2x)
L1
1.2uH
DO1813P
-122HC
LX
DL
PGND
GND
FB
N1B
1/2
FDS
8926A
6
7
R2
12.7k
R4
2.7
1.8V@2A
C6
22uF
6V
X5R
C5
1.2nF
R3
10.0k
1953_1o8
RWY
4/30/03
Vin
3.31
3.13
3.32
3.47
20MHz BW
Iin
0.0324
1.3123
1.2368
1.8159
Vout
1.817
1.815
1.816
1.816
12mVpp
Iout
0
2.006
2.006
2.006
Efficiency
0.886
0.887
0.885
BILL OF MATERIALS
1.8V @ 2A Output
4/30/03
1953_1o8
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
3
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
1.2uH Power Inductor
Fairchild FDS8926A
3.14V to 3.47V
VIN
D1
CMPSH-3
C2
4.7uF
1
R1
47k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
330pF
DH
10
C3
0.1uF
N1A
1/2
FDS
6890A
C4
22uF
L1
6V
(2x) 1.0uH
DO3316P
-102HC
1.2V@3A
VOUT
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6890A
6
7
R2
5.11k
R4
2.4
C5
1.5nF
C6
22uF
6V
(2x)
R3
10.0k
1953_1g2
RWY
3/26/03
Vin
3.3096
3.1373
3.2996
3.4745
20MHz BW
Iin
0.0362
1.3503
1.2848
1.2215
Vout
1.2049
1.2029
1.2028
1.2029
<10mVpp
Iout
0
3.0112
3.0113
3.0113
Efficiency
0.8550
0.8544
0.8535
BILL OF MATERIALS
1.2V @ 3A Output
3/26/02
1953_1g2
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
4
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Fairchild FDS6890A
4.75V to 5.25V
VIN
D1
BAT54
C2
4.7uF
10V
X5R
1
R1
33k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
330pF
DH
10
8
9
C3
0.1uF
N1A
1/2
FDS
6930A
R2
4.7
C4
22uF
6V
L1
X5R 1.8uH
CDRH4D28
-1R8
1.2V@2.1A
VOUT
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6930A
6
7
R3
5.11k
R5
4.7
C6
22uF
6V
X5R
C5
330pF
R4
10.0k
1953_1j2
RWY
3/2/04
Vin
5.02
4.74
5.03
5.27
20MHz BW
Iin
0.022
0.64
0.60
0.58
Vout
1.177
1.190
1.186
1.182
<20mVpp
Iout
0
2.1
2.1
2.1
Efficiency
0.824
0.825
0.812
BILL OF MATERIALS
1.2V @ 2.1A Output
3/2/04
1953_1j2
DESIGNATION
C1,C5
C2
QTY
1
1
C3
C4,C6
1
2
D1
L1
N1
R1
R2,R5
R3
R4
U1
1
1
1
1
1
DESCRIPTION
BAT54
Sumida CDRH4D28-1R8
Fairchild FDS6930A
4.5V to 5.5V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
33k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
390pF
DH
10
C3
0.1uF
N1A
1/2
FDS
6890A
C4
22uF
L1
6V
(2x) 1.0uH
DO3316P
-102HC
1.5V@4A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6890A
6
7
R2
8.87k
R4
2.7
C5
1.5nF
C6
22uF
6V
(2x)
R3
10.0k
1953_1k5
RWY
8/11/03
Vin
5.00
4.47
5.00
5.53
20MHz BW
Iin
0.05
1.55
1.39
1.27
Vout
1.506
1.504
1.503
1.500
<10mVpp
Iout
0
4
4
4
Efficiency
0.868
0.865
0.854
BILL OF MATERIALS
4.5V to 5.5V Input
1.5V @ 4A Output
8/11/03
1953_1k5
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
4
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
1uH Power Inductor
Fairchild FDS6890A
MAX1939: AMD Athlon XP Mobile Processor Solution

MAX1939 is a dual-phase DC-DC switching regulator for the AMD Athlon Mobile processor. The MAX1939 can
be evaluated using the MAX1938 EV kit. Although the board can support 60A of output current, the Athlon XP
Mobile processors draw less than 30A of current. Furthermore efficiency is extremely important in the 10A to 30A
operating range. In this experiment the existing 60A board has been optimized to obtain high efficiency in the 10A
to 30A load range. The following document provides the input and output conditions, BOM, circuit schematic and
the resulting efficiency.
Specifications:
Input: +6.5V to +20V;
Output: 1.5V; Maximum load=30A
Bill of Materials:
DESIGNATION
C3, C7
QTY
2
C4
C5
C6
C8, C9, C17, C32
C10-C13
C14
C15
C33,34,37,38,41,42,
45,46
C49-C52
D2
L1,L2
N12, N14, N15,
N16, N17, N18
2
6
R1,D1
R2
R3
R4
R5, R8
R6
R7
R9, R10
R11, R14
2
1
1
1
2
1
1
2
2
R17, R18
U1
1
1
DESCRIPTION
0.22 F, 10V ceramic capacitor X7R (0603)
Taiyo Yuden LMK107BJ224KA
2.2 uF 10V ceramic capacitor X5R (0805)
0.47 F, 10V ceramic capacitor X5R (0603)
Taiyo Yuden LMK107BJ474KA
47 pF, 50V ceramic capacitors COG (0603)
Murata GRM39COG470J050AD
1000 pF, 6.3V ceramic capacitors X7R (0603)
Murata GRM39X7R102K
10F, 6.3V ceramic capacitors (0805)
1F, 10V ceramic capacitors X7R (0805)
0.01 F 50V ceramic capacitor X7R (0603)
Murata GRM18X7R103K50V
10F, 25V ceramic capacitors (1812)
390 F, 2V Low ESR (10 m) electrolytic capacitors
Panasonic EEFUE0D391XR
100 mA, 30V Schottky Dual diode
Central Semiconductor CMPSH-3A
1.0H Inductor Panasonic ETQP6F1R0BFA
N-channel MOSFETs, 30V (RDS(ON) =9m
@VGS=4.5V)
International Rectifier IRF7811W
0 ohm. Short.
51.1 k, 1% resistor
200 k, 1% resistor
37.4 k, 1% resistor
3.3, 5% resistor
100 k, 5% resistor
120 k, 5% resistor
200 , 5% resistor
2 m, 1% sense resistor 1W (2512)
Panasonic ERJM1WTF2M0U
100 , 5% resistor
MAX1939EEI (28 pin QSOP)
Vripple=20mV
Athlon is the Trademark of Advanced Micro Devices
MAX1939 Circuit Schematic:
6.5V to
20V
VIN
D1
Short
VDD
5V
R1
Short
C4
2.2uF
28
VCC
8 VDD
DH1
U1
MAX1939
C15
0.01uF
1
VID0
2 VID1
4 VID2
5
PGND
VID3
C5
0.47uF
R4
37.4k
R3
200k
12
9
21
R9
200
C9
1000
pF
C
M
D2PS
H3A
BST2 16 R8
N3
IRF
7811W
(2x)
C49-C52
390uF
Panasonic
SP Cap
(4X)
C10-C13
10uF
6.3V
JMK316BJ106ML
(4x)
R14
0.002
R11
0.002
6(
N
IRF
4
7811W
(2x)
L2
1.0uH
3.3
LX2 18
DH2 17
REF
ILIM
N2
IRF
7811W
FB 14
PWRGD 15
10 GND
11 GNDS
GNDS
R17
100
C8
1000
pF
VLG 22
7 VPOS
1.5V @
30A
VOUT
R10
200
DL2 20
13 EN
3 TIME
R2
51.1k
R5
3.3
C3
0.22uF
CS2 19
6 VID4
R7
120k
BST1 27
CS1 24
L1
1.0uH
N1
IRF
7811W
26
LX1 25
DL1 23
C6
47pF
10uF
25V
TMK432BJ106MM
(8x)
C14
1uF
C17
1000 pF
C32
1000 pF
TO VIN
R18
100
R6
100k
PWRGD
TO VDD
Efficiency Data:
Efficiency data is taken at 3 operating input voltages 7V, 12V and 20V.
Vin
7.2
7.12
7.03
7.16
7.05
7.09
Iin
I_Vdd Vout Iout Efficiency
1.1114 0.023 1.4945 5.03
92.61
2.2493 0.024 1.4887 10.02
92.45
3.4478 0.025 1.4829 15.02
91.42
4.5847 0.026 1.4774 20.01
89.70
5.9 0.027 1.4716 25.02
88.23
7.155 0.028 1.466
30
86.46
Vin
Iin
12.26 0.6649 0.025 1.4962 5.01
90.57
12.21 1.3269 0.025 1.4912 10.02
91.52
12.16 2.0145 0.026 1.4862 15.02
90.65
12.11 2.7345 0.027 1.4809 20.01
89.12
12.06 3.4845 0.027 1.4755 25.02
87.57
12 4.2569 0.028 1.4683
30
85.99
Vin
Iin
20.2 0.4158 0.026 1.4959 5.01
87.87
20.17 0.8215 0.027 1.491 10.02
89.44
20.14 1.2403 0.028 1.4863 15.02
88.87
20.11 1.6775 0.029 1.4815 20.01
87.50
20.08 2.133 0.03 1.4767 25.02
85.96
20.04 2.6063 0.03 1.4716
30
84.28
High Efficiency in 10A to 20A Operating Range

95.00
Vin = 7V
Efficiency (%)
Vin = 12V
90.00
Vin = 20V
85.00
80.00
0
10
15
20
25
30
35
Output Current (A)
Conclusion: MAX1939 EV kit exhibits greater than 90% peak efficiency at lower load currents.
3.0V to 5.5V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
47k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
390pF
DH
10
C3
0.1uF
N1A
1/2
FDS
6898A
C4
22uF
6V
(3x)
L1
0.6uH
FDV0630
1.8V@5A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6898A
6
7
R2
12.7k
R4
2.2
C5
1.2nF
C6
22uF
6V
(3x)
R3
10.0k
1953_1t8
RWY
12/14/04
Vin
3.30
2.97
3.30
3.62
4.50
5.53
20MHz BW
Iin
0.0311
3.41
3.06
2.79
2.25
1.85
Vout
1.791
1.788
1.788
1.788
1.788
1.786
<10mVpp
Iout
0
5
5
5
5
5
Efficiency
0.883
0.885
0.885
0.883
0.873
BILL OF MATERIALS
3.0V to 5.5V Input
1.8V @ 5A Output
12/14/04
1953_1t8
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
6
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
0.6uH 10A Inductor
Toko FDV0630-0R6
Fairchild FDS6898A
XENPAK APS power: 5V in 0.9V to 1.8V/0.2A to 1.8A out

Schematic
Vin
4.5V to 5.5V
0.22uF
C1
C2
10uF
IN
D1
HSD
BST
Q1
FDC633N
DH
0.1uF
R1
680pF
130k
0.9V-1.8V/ 0.2A-1.8A
6.8uH
APS Power
LX
Q2
COMP
MAX1954
C6
DL
To 5Vin
150uF
C4
18mOhm
FDC633N
GND
CL
Load
C5
L1
C3
R2
750
18pF
PGND
R3
APS Sense
FB
1K
R4
R5
787
30K
APS Set
Rset
See Table
GND Sense (RTN)
Q3
Module Detect
MMBT3904
BOM:
Chien Nguyen
Figure 1: 5V In, 0.9V to 1.8V, 0.2A to 1.8A out
1 OF 2
2/27/03
1K
XENPAK Transceiver Module
GND
XENPAK APS power: 5V in 0.9V to 1.8V/0.2A to 1.8A out

COMPONENT
DESCRIPTION
VENDOR/PART NUMBER
QTY
C1
Capacitor Ceramic: 0.22uF/16V / X7R
TDK: C1608X7R1C224MT
C2
C3
Capacitor Ceramic: 10uF/10V/X5R

Capacitor Ceramic: 0.1uF/10 / X7R
TDK: C3216X5R1A106M
Kemet: C0603C104M8RAC
1
1
C4, CL
C5
Capacitor POS: 150uF/4V

Capacitor Ceramic: 680pF/10V/X7R
Sanyo: 4TPE150MI
Kemet: C0603C681M8RAC
2
1
C6
D1
Capacitor Ceramic: 18pF/25V / COG

Schottky diode, 30V, 100mA
Kemet: C0603C180M3GAC
Central semiconductor CMPSH-3
1
1
L1
TDK:RLF7030-6R8M2R8
Fairchild: FDC633N
R1
Inductor: 6.8 H, 2.8A

N Channel SupperSOT-6: 30V,
42mOhms
Resistor: 130 KOhns, 5%
R2
R3
Resistor: 750, 5%
Resis tor: 1K, 1%
1
1
R4
R5
Resistor: 787, 1%
Resistor: 30K, 5%
1
1
Q3
Transistor, NPN: MMBT3904
Q1, Q2
Notes:
The circuit was tested with CL installed at the load through 6 of #16 AWG lead
wires:
1)
2)
3)
4)
Load regulation: 9mV from 0.2A to 1.8A.

Line Regulation: ~ 0mV from 4.5V to 5.5V in.
Efficiency: ~88% at 5V in and 1.8V/1.8A out
Ripple and noise: 2.5mVp-p measured at CL; 15mVp-p measured at C4
Chien Nguyen
2 OF 2
2/27/03
12V to 6V Step-Down Converter with Fold-Back Current

Limit Protection
11.5V to 12.5V
VIN
C9
0.1uF
C1
1uF
10V
C12
1uF
4
D2
CMPSH-3
R3
10
3
VCC
D1
CMPSH-3
5
VL
BST
IN
U1
MAX8546
R4
150k
COMP
DH
Q1
MMBT
3904
R5
10k
10
C5
0.1uF
LX
GND
R8
3
N1B
1/2
FDS
6912A
L1
10uH
CEP125
N1A
1/2
FDS
6912A
R9
6.8
6V@3A
VOUT
C7
330uF
10V
MV-AX
C13
560pF
SHDN
R6
10k
C4
1uF
DL
C10
2.2nF
C2,C3
10uF
16V
X5R
FB
R1
66.5k
R2
10.0k
8546_6a
RWY
9/02/03
Vin
12.01
11.46
12.01
12.54
20MHz BW
Iin
0.009
1.671
1.571
1.505
Vout
6.053
6.049
6.049
6.048
100mVpp
Iout
0
3.01
3.01
3.01
Efficiency
0.951
0.965
0.965
12V to 6V Step-Down Converter with Fold-Back Current

Limit Protection
BILL OF MATERIALS
6V @ 3A Output
9/02/03
8546_6a
DESIGNATION
C1
QTY
1
C2,C3
C4,C12
C5,C9
C7
2
1
C10
C13
D1,D2
1
1
2
L1
N1
Q1
R1
R2
R3
R4
R5,R6
R8
R9
U1
1
1
1
1
2
1
1
1
DESCRIPTION
Sanyo 10MV330AX
Sumida CEP125-100
FDS6912A
Fairchild MMBT3904
5V Input, Digitally Selectable 1V/1.2V Output at 6A
4.75V to 5.25V
VIN
C1
10uF
6V
X5R
5
IN
COMP
DH
U1
MAX1954
C3
22pF
10
C4
0.1uF
N1
1/2
Si4814DY
L1
1.5uH
DO3316P
-152HC
1V@6A
VOUT
LX
DL
N3
2N7002
ENABLE
1
HSD
BST
R1
220k
C2
270pF
C5
22uF
6V
X5R
(2x)
D1
CMPSH-3
PGND
6
7
R6
100k
4
GND
FB
N1
1/2
Si4814DY
C6
1.2nF
R2
4.64k
R3
9.09k
1.2V
R6
2.7
C7
220uF
2.5V
TPE
(2x)
R4
9.09k
1V
N2
2N7002
1954_1c2
RWY
9/09/03
Efficiency at 1V output
Vin
Iin
5.01
0.020
4.48
1.643
5.00
1.471
5.52
1.328
20MHz BW
Efficiency at 1.2V output
Vin
Iin
5.01
0.024
4.47
1.932
5.01
1.724
5.52
1.564
20MHz BW
R5
100k
Vout
1.001
0.994
0.995
0.995
30mVpp
Iout
0
6
6
6
Efficiency
Vout
1.206
1.199
1.200
1.200
30mVpp
Iout
0
6
6
6
Efficiency
0.810
0.812
0.814
0.833
0.834
0.834
BILL OF MATERIALS
1V/1.2V @ 6A Output
9/09/03
1954_1c2
DESIGNATION
C1
QTY
1
C2
C3
C4
1
1
1
C5
C6
C7
1
2
D1
L1
N1
N2,N3
R1
R2
R3,R4
R5,R7
R6
U1
1
1
1
2
2
1
1
DESCRIPTION
Sanyo 2R5TPE220M
1.5uH 9A Inductor
32m Ohm 30V N-ch Dual MOSFET (SO-8)
Siliconix Si4814DY
2N7002
91% Efficient 12V to 3.3V, 6A Step-down Converter

10.8V to 13.2V
VIN
5V BIAS
C1
4.7uF
10V
X5R
R1
2.2M
5
IN
1
HSD
BST
COMP
U1
MAX1954
C3
12pF
C2
470pF
C5
10uF
25V
X5R
(2x)
D1
CMPSH-3
DH
10
C4
0.1uF
N1
FDS
6614A
L1
4.7uH
DO5022P472HC
3.3V @ 6A
VOUT
LX
DL
PGND
GND
FB
N2
FDS
6614A
R4
3
C6
820pF
R2
31.6k
C7
1200uF
10V
MV-AX
(2x)
R3
10.0k
1954_3e3
RWY
11/26/02
Vbias
5.0356
5.0363
5.0363
5.0364
20MHz BW
Ibias
0.0064
0.0067
0.0067
0.0068
Vin
12.012
10.787
12.011
13.230
Iin
0.0118
2.0145
1.8150
1.6524
Vout
3.3208
3.3163
3.3170
3.3173
50mVpp
Iout
0
6.034
6.034
6.034
Efficiency
0.919
0.917
0.914
91% Efficient 12V to 3.3V, 6A Step-down Converter

BILL OF MATERIALS
3.3V @ 6A Output
11/26/02
1954_3e3
DESIGNATION
C1
QTY
1
C2
C3
C4
1
1
1
C5
C6
C7
1
2
D1
L1
N1,N2
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 10MV1200AX
4.7uH 13A Inductor
25 Ohm 30V N-ch MOSFET (SO-8)
Fairchild FDS6614A
2.2M Ohm 5% resistor (0603)
92% Efficient 3.3V to 1.8V, 5A Step-Down Converter

3.0V to 3.6V
VIN
C3
4.7uF
10V
X5R
R1
180k
5
IN
COMP
D1
CMPSH-3
1
HSD
10
BST
U1
MAX1954
C2
15pF
C1
560pF
C5
22uF
6V
X5R
(2x)
DH
C4
0.1uF
8
9
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6898A
6
7
L1
1.5uH
DO3316P
-152HC
N1A
1/2
FDS
6898A
R2
12.7k
R4
2.7
1.8V@5A
VOUT
C7
1uF
10V
C8
10uF
6V
C6
1.2nF
R3
10.0k
1954_1k8
RWY
5/22/03
Vin
3.29
2.96
3.30
3.65
20MHz BW
Iin
0.032
3.296
2.961
2.681
Vout
1.812
1.809
1.809
1.810
20mVpp
Iout
0
5.005
5.006
5.006
Efficiency
0.928
0.927
0.926
C9
470uF
4V
TPD
92% Efficient 3.3V to 1.8V, 5A Step-Down Converter

BILL OF MATERIALS
3.0V to 3.6V Input
1.8V @ 5A Output
5/22/03
1954_1k8
DESIGNATION
C1
C2
C3,C7
QTY
1
1
1
C4
C5
1
2
C6
C8
1
1
C9
D1
L2
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 4TPD470M
1.5uH 9A Inductor
Fairchild FDS6898A
92% Efficient, 5V to 2.5V, 6A Step-down Converter

+4.5V to +5.5V
VIN
C5-C6
470uF
10V
HC
C3
1uF
10V
X5R
R1
910k
5
IN
COMP
U1
MAX1954
C2
33pF
C1
680pF
D1
CMPSH-3
1
HSD
10
BST
DH
C4
0.1uF
9
LX
DL
PGND
L1
3.3uH
DO5022P
-332HC
N1A
1/2
FDS
6990A
N1B
1/2
FDS
6990A
6
7
R4
2.4
C7
1.2nF
GND
FB
2.5V@4A
VOUT
C8
680uF
10V
MV-AX
(2x)
R2
21.5k
R3
10.0k
1954_2f5
RWY
10/28/02
Vin
5.0089
4.4865
5.0048
5.502
20MHz BW
Iin
0.0194
2.4133
2.1643
1.9678
Vout
2.4821
2.4860
2.4852
2.4827
50mVpp
Iout
0
4.0110
4.0111
4.0111
Efficiency
0.921
0.920
0.920
C9
0.1uF
92% Efficient, 5V to 2.5V, 6A Step-down Converter

BILL OF MATERIALS
4.5V to 5.5V Input
2.5V @ 4A Output
10/28/02
1954_2f5
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4,C9
C5,C6
2
2
C7
C8
1
2
D1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 10MV470HC
Sanyo 10MV680AX
Fairchild FDS6990A
90% Efficient, All Ceramic, 5V to 3.3V, 4A Step-down

Converter
4.75V to 5.25V
INPUT
D1
CMPSH-3
C3
4.7uF
10V
X5R
1
R1
62k
C1
180pF
5
IN
BST
ILIM
COMP
U1
MAX1953
C2
22pF
DH
C5
10uF
10V
X5R
(2x)
10
C4
0.1uF
N1A
1/2
FDS
8926A
L1
1.2uH
DO1813P
-122HC
3.3V@4A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
8926A
6
7
C6
1nF
C8
22nF
C7
22uF
6V
X5R
R2
31.6k
R3
10.0k
1953_3b3
RWY
4/17/02
Vin
5.0002
4.4955
4.7476
5.0081
5.2502
5.501
Iin
0.044
3.212
3.041
2.882
2.752
2.630
Ripple
Vout
3.3082
3.3023
3.2899
3.2813
3.2780
3.2761
90mVpp
Iout
0
4.00026
4.0027
4.0027
4.0027
4.0027
Efficiency
0.915
0.912
0.910
0.908
0.906
90% Efficient, All Ceramic, 5V to 3.3V, 4A Step-down

Converter
BILL OF MATERIALS
3.3V @ 4A Output
4/17/02
1953_3b3
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5
1
2
C6
C7
1
1
C8
D1
1
1
L1
N1
R1
R2
R3
U1
1
1
1
1
DESCRIPTION
1.2uH 5A Inductor
38m Ohm 30V Dual MOSFET (SO-8)
Fairchild FDS8926A
All Ceramic, 3V to 5.5V Input, 1.5V/2A Output Step-Down

Converter
3.0V to 5.5V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
22k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
680pF
DH
C4
22uF
6V
X5R
10
C3
0.1uF
N1
1/2
FDS
8926A
L1
2.2uH
DO3316P
-222HC
1.5V@2A
LX
DL
PGND
GND
FB
N1
1/2
FDS
8926A
6
7
R2
8.87k
R4
2.7
C5
1.2nF
C6
22uF
6V
X5R
(2x)
R3
10.0k
1953_1j5
RWY
1/23/03
Vin
3.2948
2.9967
3.3032
3.6036
4.4907
5.505
20MHz BW
Iin
0.0281
1.1514
1.0450
0.9595
0.7810
0.6486
Vout
1.5095
1.5084
1.5084
1.5072
1.5078
1.4940
<10mVpp
Iout
0
2.010
2.010
2.010
2.010
2.010
Efficiency
0.879
0.878
0.876
0.864
0.841
All Ceramic, 3V to 5.5V Input, 1.5V/2A Output Step-Down

Converter
BILL OF MATERIALS
3.0V to 5.5V Input
1.5V @ 2A Output
1/23/03
1953_1j5
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
3
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
2.2uH 7A Inductor
Fairchild FDS8926A
Wide Input, Low Profile, 2.5V/10A Step-Down Converter

8V to 20V
VIN
C4
2.2uF
10V
C3
0.1uF
C2
0.1uF
4
R1
47k
R2
10
3
VCC
5
VL
BST
IN
U1
MAX8546
1
COMP
DH
FB
Efficiency and ripple data>

Vin
Iin
11.99
0.033
7.96
3.527
11.99
2.388
15.99
1.834
20.06
1.511
20MHz BW
C5
0.1uF
N1
IRF
7821
9
R3
10
L1
2.2uH
DO5022P
-222HC
2.5V@10A
VOUT
LX
GND
8546_2c5
RWY
5/27/03
10
DL
C1
10nF
C6
10uF
25V
X5R
(3x)
D1
CMPSH-3
N2
Si4888
DY
R4
21.5k
C8
R6
680uF
2.2
4V
0.25W TPB
(2x)
C7
1.5nF
R5
10.0k
Vout
2.496
2.487
2.483
2.479
2.478
100mVpp ripple
Iout
0
10.00
10.00
10.00
10.00
Efficiency
0.886
0.867
0.845
0.818
Wide Input, Low Profile, 2.5V/10A Step-Down Converter

BILL OF MATERIALS
8V to 20V Input
2.5V @ 10A Output
5/27/03
8546_2c5
DESIGNATION
C1
C2,C3,C5
C4
QTY
1
3
1
C6
C7
C8
1
2
D1
L1
N1
N2
R1
R2,R3
R4
R5
R6
U1
1
2
1
1
1
1
DESCRIPTION
Sanyo 4TPB680M
2.2uH 20A Power inductor
12m Ohm 30V N-channel MOSFET (SO-8)
Siliconix Si4888DY
2.2 Ohm 0.25W 5% resistor (1206)
Wide Input, 91% Efficient, Low Profile, 5V/6A Step-Down

Converter
12V to 20V
VIN
C2
0.1uF
C3
2.2uF
10V
4
D1
CMPSH-3
R1
120k
3
VCC
5
VL
BST
IN
U1
MAX8546
1
C5
10uF
25V
X5R
(2x)
D2
CMPSH-3
COMP
DH
LX
GND
C4
0.1uF
N1
FDS
6690A
9
8
DL
C1
10nF
10
R2
1
R3
1
N2
FDS
6690A
L1
6.0uH
DO5022P
-602HC
R6
2.2
5V@6A
VOUT
C7
220uF
10V
TPB
(2x)
C6
1.2nF
FB
R4
53.6k
R5
10.0k
8546_5c
RWY
5/13/03
Efficiency and ripple measurements

Vin
Iin
14.99
0.028
11.94
2.706
15.00
2.175
20.05
1.650
20MHz BW
Vout
5.049
5.036
5.038
5.041
40mVpp ripple
Iout
0
6.00
6.00
6.00
Efficiency
0.935
0.927
0.914
Wide Input, 91% Efficient, Low Profile, 5V/6A Step-Down

Converter
BILL OF MATERIALS
12V to 20V Input
5V @ 6A Output
5/13/03
8546_5c
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5
C6
C7
1
2
D1,D2
L1
N1,N2
R1
R2,R3
R4
R5
R6
U1
1
2
1
1
1
1
DESCRIPTION
Sanyo 10TPB220M
Fairchild FDS6690A
2.2 Ohm 0.25W 5% resistor (1206)
12V to 3.3V Converter is 94% Efficient, Fits in <1.5 Inch2

Input Voltage: 12V +-10%
Output: 3.3V, Maximum load=6A
Switching Frequency=400KHZ
10.8V < VIN < 13.2V
C1-C3
4.7 uF
16V
X3
C15
10uF
6.3V
MAX8554
R3
100K
D1 CMPSH-3
POK
VL
V+
BST
JU1
10
C12
1uF
16v
2
1
7
5
JU3
R1
221K
JU2
6
8
EN
U1
11
14
N1
IRF7811W
C14
0.47uF
10v
HSD
LX 16
REF
DL
ILIM
PGND
FSEL
OUT
GND
FB
N2
IRF7811W
12
13
R2A
4.7
9
4
C13
0.47uF
10v
C2A
680pF
R8
22.6K
C16
2.2uF
VOUT=3.3V @ 6A
L1
2.8uH
DH 15
R7
4.99K
C9
220uF
C8
10uF
6.3V
Vin (V)
12.173
12.166
12.161
12.151
12.141
12.132
12.112
12.094
12.072
12.055
12.036
12.016
11.998
11.977
11.96
12.002
10.79
13.247
I_in(A)
0.0224
0.0517
0.0909
0.1607
0.2329
0.3038
0.4488
0.5883
0.7475
0.8737
1.0204
1.1785
1.3177
1.4787
1.6161
1.757
1.946
1.5987
Vout (V)
3.3282
3.3269
3.3257
3.3242
3.3221
3.3211
3.3198
3.3187
3.318
3.3175
3.317
3.3165
3.3161
3.3156
3.3152
3.3146
3.3102
3.3176
Iout(A)
0
0.108
0.25
0.502
0.757
1.005
1.518
2.009
2.565
3.003
3.507
4.047
4.51
5.05
5.51
6
6
6
Efficiency
57.12
75.21
85.46
88.94
90.56
92.71
93.71
94.31
94.59
94.72
94.78
94.60
94.54
94.51
94.31
94.59
93.99
Efficiency Vs. Load Current

100.00
90.00
80.00
70.00
60.00
50.00
0
3
Amps
Bill of Materials:
DESIGNATI
QTY
ON
C1-C3
3
C9
C8, C15
C13, C14
C16
C12
C2A
D1
L1
N1, N2
R1
R7
R3
R8
R2A
JU1
JU2, JU3
U1
1
1
1
1
1
1
1
2
1
DESCRIPTION
4.7uF 16V ceramic capacitors X5R (1206)
TDK C3216X5R1C475K
220F 4V 18mOhm esr PosCap Sanyo
4TPE220MI
10uF 6.3V ceramic capacitor X5R (0805)
0.47uF 10V ceramic capacitor X5R (0603)
2.2 F 6.3V ceramic capacitors X5R (0603)
Taiyo Yuden JMK212BJ225MA
1 F 16V ceramic capacitors (0805) X5R
TDK C2012X5R1C105K
680pF GRM1885C1H681JA01B 0603,
COG 50V Murata
2.8uH Inductor Sumida CEP123D38 2R8MC
International Rectifier IRF7811W SO8
221K, 1% SMD resistor (0603)
4.99k, 1% resistor (0603)
22.6K, 1% SMD resistor (0603)
4.7, 5% resistor (0805)
Shorted, 3 pin header
Open, 3 pin header
12V to 2.5V Converter is 93% Efficient, Fits in <1.5 Inch2

Input Voltage: 12V +-10%
Output: 2.5V, 6A
Switching Frequency=400KHZ
10.8V < VIN < 13.2V
C1-C3
4.7 uF
16V
X3
C15
10uF
6.3V
MAX8554
R3
100K
D1 CMPSH-3
POK
VL
V+
BST
JU1
10
C12
1uF
16v
2
1
7
5
6
R1
301K
EN
U1
11
14
N1
IRF7811W
C14
0.47uF
10v
L1
2.5uH
DH 15
HSD
LX 16
REF
DL
ILIM
PGND
FSEL
OUT
GND
FB
N2
IRF7811W
12
13
VOUT=2.5V @ 6A
C8
10uF
6.3V
R2A
4.7
9
4
C13
0.47uF
10v
C2A
680pF
R8
16.2K
C16
2.2uF
R7
5.11K
C9
220uF
Bill of Materials:
DESIGNATI
QTY
ON
C1-C3
3
C9
C8, C15
C13, C14
C16
C12
C2A
D1
L1
N1, N2
R1
R7
R3
R8
R2A
JU1
JU2, JU3
U1
1
1
1
1
1
1
1
1
2
1
DESCRIPTION
4.7uF 16V ceramic capacitors X5R (1206)
TDK C3216X5R1C475K
220F 4V 15mOhm esr PosCap Sanyo
4TPE220MF
10uF 6.3V ceramic capacitor X5R (0805)
0.47uF 10V ceramic capacitor X5R (0603)
2.2 F 6.3V ceramic capacitors X5R (0603)
Taiyo Yuden JMK212BJ225MA
1 F 16V ceramic capacitors (0805) X5R
TDK C2012X5R1C105K
680pF GRP155R71H681KA01B (0603),
X7R, 50V Murata
2.5uH Inductor Sumida CEP125-2R5
International Rectifier IRF7811W SO8
5.11k, 1% resistor (0603)
16.2K, 1% SMD resistor (0603)
4.7, 5% resistor (0805)
Shorted, 3 pin header
Open, 3 pin header
MEASURED DATA:
Vin(v)
12.194
12.192
12.188
12.183
12.177
12.171
12.159
12.147
12.135
12.124
12.112
12.101
12.089
12.09
12.078
12.066
12.053
10.779
13.237
I_in(A)
0.0193
0.0403
0.0707
0.1237
0.1773
0.2309
0.3381
0.4461
0.5526
0.6607
0.7685
0.8913
0.9872
0.9873
1.1
1.2102
1.332
1.4822
1.2188
Vout(v)
2.4853
2.4843
2.483
2.481
2.479
2.4781
2.4771
2.4761
2.4755
2.4753
2.4748
2.4738
2.4729
2.473
2.4722
2.4713
2.4703
2.4679
2.4724
Iout(A)
0
0.103
0.25
0.502
0.75
1.001
1.506
2.012
2.508
3.009
3.504
4.065
4.501
4.501
5.008
5.5
6.04
6.04
6.04
Efficiency
52.08
72.04
82.64
86.12
88.27
90.75
91.94
92.58
92.98
93.16
93.24
93.27
93.25
93.19
93.08
92.94
93.30
92.56
Efficiency Vs. Load

100.00
90.00
80.00
70.00
60.00
50.00
0
3
Amps
93% Efficient Wide Input Step-Down Regulator with

Fold-Back Current Limit
11V to 23V
VIN
C2
0.1uF
C3
2.2uF
10V
4
3
VCC
5
VL
BST
IN
U1
R1
33k
DH
MAX8546
1
C5
220uF
35V
MV-AX
D1
CMPSH-3
COMP
LX
GND
C4
0.1uF
N1
1/2
FDS
6930A
9
8
DL
C1
10nF
10
R2
4.7
R3
4.7
N1
1/2
FDS
6930A
L1
22uH
CDRH127
-220
3.7V@1.5A
VOUT
R6
4.7
C7
0.1uF
C8
220uF
10V
MV-AX
C6
330pF
FB
R4
36.5k
R5
10.0k
8546_3a7
RWY
1/15/04
Efficiency and Ripple Measurements:

Vin
17.01
10.98
17.01
23.07
Iin
0.007
0.53
0.34
0.25
Ripple
Vout
3.66
3.62
3.58
3.59
100mVpp (20MHz BW)
Iout
0
1.5
1.5
1.5
Efficiency
0.933
0.929
0.934
93% Efficient Wide Input Step-Down Regulator with

Fold-Back Current Limit
BILL OF MATERIALS
11V to 23V Input
3.7V @ 1.5A Output
1/15/04
8546_3a7
DESIGNATION
C1
C2,C4.C7
C3
QTY
1
3
1
C5
C6
C8
1
1
D1
L1
N1
R1
R2,R3
R4
R5
R6
U1
1
2
1
1
1
1
DESCRIPTION
Sanyo 35MV220AX
Sanyo 10MV220AX
22uH 3.6A Power inductor
Sumida CDRH127-220
Fairchild FDS6930A
USB to 3.18V
VIN
4.5V to 5.25V
C1
10uF
10V
1
8
6
7
2
4
C3
0.1uF
IN
LX
9
L1
10uH
2.3A
SHDN
LIM
U1
MAX1692
SYNC/PWM
FB
+3.18V @ 320mA
C2
10uF
10V
C5
47pF
BP
R2
13.0k
1%
REF
PGND
C4
0.22uF
R1
20.0k
1%
10
GND
3
RWY
7/19/00
GSp01Q1a BILL OF MATERIALS

4.5 to 5.25V Input
3.18V @ 320mA Output
07/19/00
BOM REV: PRELIM (P1)
BOARD REV: P1
DESIGNATION
QTY DESCRIPTION
C1, C2
2
TAIYO YUDEN LMK325BJ106MN
C3
1
C4
1
C5
1
L1
1
10uH Power Inductor
R1
1
Est. Cost
0.25
0.02
0.02
0.02
0.25
0.01
R2
0.01
U1
1.25
Vin (V)
4.501
5.256
Iin (A)
0.243
0.21
Vout (V)
3.1249
3.130
Iout (A)
0.32
0.32
Efficiency
0.914
0.907
3.0V to 3.6V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
20k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
470pF
DH
C4
22uF
6V
X5R
(5x)
10
C3
0.47uF
N1
FDS
6570A
L1
0.36uH
CDEP105
-0R3
LX
DL
PGND
GND
FB
N2
FDS
6570A
R2
8.87k
R4
1.8
1.5V@9A
C6
22uF
6V
X5R
(3x)
C5
2.7nF
R3
10.0k
1953_1h5
RWY
12/27/02
Vin
3.3078
2.9920
3.3020
3.6066
Iin
0.0965
5.470
4.948
4.525
Vout
1.5106
1.5065
1.5065
1.5065
20mVpp
Iout
0
9.006
9.006
9.006
Efficiency
0.829
0.830
0.831
BILL OF MATERIALS
3.0V to 3.6V Input
1.5V @ 9A Output
12/27/02
1953_1h5
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
8
C5
D1
1
1
L1
N1,N2
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
0.36uH 17A Inductor
Sumida CDEP105-0R3
Fairchild FDS65790A
3.0V to 5.5V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
33k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
560pF
DH
10
C3
0.1uF
N1A
1/2
FDS
6890A
C4
22uF
L1
6V
(2x) 1.0uH
DO3316P
-102HC
1.8V@3A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6890A
6
7
R2
12.7k
R4
2.7
C5
1.5nF
C6
22uF
6V
(2x)
R3
10.0k
1953_1p8
RWY
5/09/03
1953_1p8b 5/14/03
#1
Vin
3.30
2.99
3.31
3.60
4.50
5.00
5.51
20MHz BW
#2
Vin
3.30
2.99
3.30
3.61
4.50
5.00
5.52
20MHz BW
Iin
0.035
2.018
1.828
1.679
1.361
1.234
1.128
Vout
1.811
1.809
1.810
1.809
1.811
1.809
1.805
<10mVpp
Iout
0
3.010
3.010
3.010
3.010
3.010
3.010
Iin
0.035
2.029
1.835
1.680
1.362
1.235
1.132
Vout
1.812
1.812
1.812
1.812
1.813
1.812
1.811
<10mVpp
Iout
0
3.010
3.010
3.010
3.010
3.010
3.010
Efficiency
0.902
0.900
0.901
0.890
0.883
0.874
Efficiency
0.899
0.901
0.899
0.890
0.883
0.872
BILL OF MATERIALS
3.0V to 5.5V Input
1.8V @ 3A Output
5/09/03
1953_1p8
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
4
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
1uH Power Inductor
Fairchild FDS6890A
3.0V to 5.5V
INPUT
D1
CMPSH-3
C2
4.7uF
1
R1
33k
5
IN
ILIM
BST
COMP
U1
MAX1953
C1
560pF
DH
10
C3
0.1uF
N1A
1/2
FDS
6890A
C4
22uF
L1
6V
(2x) 1.0uH
DO3316P
-102HC
1.8V@3A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
6890A
6
7
R2
12.7k
R4
2.7
C5
1.5nF
C6
22uF
6V
(2x)
R3
10.0k
1953_1p8
RWY
5/09/03
1953_1p8b 5/14/03
#1
Vin
3.30
2.99
3.31
3.60
4.50
5.00
5.51
20MHz BW
#2
Vin
3.30
2.99
3.30
3.61
4.50
5.00
5.52
20MHz BW
Iin
0.035
2.018
1.828
1.679
1.361
1.234
1.128
Vout
1.811
1.809
1.810
1.809
1.811
1.809
1.805
<10mVpp
Iout
0
3.010
3.010
3.010
3.010
3.010
3.010
Iin
0.035
2.029
1.835
1.680
1.362
1.235
1.132
Vout
1.812
1.812
1.812
1.812
1.813
1.812
1.811
<10mVpp
Iout
0
3.010
3.010
3.010
3.010
3.010
3.010
Efficiency
0.902
0.900
0.901
0.890
0.883
0.874
Efficiency
0.899
0.901
0.899
0.890
0.883
0.872
BILL OF MATERIALS
3.0V to 5.5V Input
1.8V @ 3A Output
5/09/03
1953_1p8
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
4
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
1uH Power Inductor
Fairchild FDS6890A
3.135V to 3.465V
INPUT
D1
CMPSH-3
C3
4.7uF
5
IN
ILIM
BST
10
R1
30k
2
C1
330pF
COMP
U1
MAX1953
C2
10pF
DH
C4
0.1uF
N1A
1/2
FDS
8926A
C5
22uF
6V
X5R
(2x)
L1
1.0uH
FDV0630
1.8V@2A
LX
DL
PGND
GND
FB
N1B
1/2
FDS
8926A
6
7
R2
12.7k
R4
2.7
C6
1.5nF
C7
22uF
6V
X5R
R3
10.0k
1953_1q8
RWY
1/07/04
Vin
3.30
3.10
3.31
3.51
20MHz BW
Iin
0.03
1.29
1.21
1.14
Vout
1.808
1.807
1.807
1.806
<10mVpp
Iout
0
2.00
2.00
2.00
Efficiency
0.904
0.902
0.903
BILL OF MATERIALS
1.8V @ 2A Output
1/07/04
1953_1q8
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5,C7
1
3
C6
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
1uH 7.7A Power Inductor
Toko FDV0630-1R0
Fairchild FDS8926A
10.8V to 13.2V
VHSD
5V
VIN
D1
CMPSH-3
C1
4.7uF
10V
X5R
5
IN
R4
1
1
HSD
BST
R3
68k
COMP
U1
MAX1954
C15
68pF
C14
1.5nF
C2-C8
10uF
25V
X5R
(7x)
DH
10
C9
0.22uF
N1,N2
IRF
7821
(2x)
8
9
LX
DL
PGND
GND
FB
1.8V@25A
VOUT
N3,N4
IRF R5
7832 2.2
(2x)
6
7
L1
0.68uH
FDA1254
R1
12.7k
C16
2.2nF
D2
CMSH5
-4
C10-C13
470uF
2.5V
TPD
(4x)
R2
10.0k
1954_1l8
RWY
12/12/03
MAXIM CONFIDENTIAL
Vin
12.00
10.78
12.00
13.22
20MHz BW
Iin
0.029
4.76
4.29
3.89
Vout
1.816
1.798
1.797
1.797
30mVpp
Iout
0
25
25
25
Efficiency
0.876
0.873
0.874
BILL OF MATERIALS
1.8V @ 25A Output
12/12/03
1954_1l8
DESIGNATION
C1
QTY
1
C2-C8
C9
C10-C13
1
4
C14
C15
C16
D1
D2
L1
N1,N2
N3,N4
R1
R2
R3
R4
R5
U1
1
1
1
1
1
1
DESCRIPTION
Sanyo 2R5TPD470M
Kemet C0603C152K8RAC
Kemet C0603C680K5GAC
Kemet C0603C222K8RAC
0.68uH 39A Inductor
Toko FDA1254-R68
3.0V to 5.5V
VIN
C3
4.7uF
10V
X5R
R1
180k
C1
820pF
5
IN
COMP
D1
CMPSH-3
1
HSD
10
BST
U1
MAX1954
C2
18pF
DH
C4
0.1uF
LX
PGND
GND
FB
N1B
1/2
FDS
6890A
6
7
L1
2.2uH
DO3316P
-222HC
N1A
1/2
FDS
6890A
DL
C5
22uF
6V
X5R
R4
2.4
C6
1.5nF
R2
3.16k
1.05V@3.5A
VOUT
C7
680uF
2.5V
TPD
R3
10.0k
1954_1a0
RWY
4/25/03
Vin
3.31
2.99
3.31
3.61
4.50
5.00
5.52
20MHz BW
Iin
0.021
1.377
1.247
1.145
0.922
0.833
0.757
Vout
1.048
1.045
1.044
1.045
1.045
1.043
1.041
40mVpp
Iout
0
3.5
3.5
3.5
3.5
3.5
3.5
Efficiency
0.888
0.885
0.882
0.877
0.872
BILL OF MATERIALS
3.0V to 5.5V Input
1.05V @ 3.5A Output
4/25/03
1954_1a0
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5
1
1
C6
C7
1
1
D1
L2
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 2R5TPD680M
2.2uH 7.8A Inductor
Fairchild FDS6890A
+7V to +13.2V
VHSD
+5V
VIN
5
IN
1
HSD
BST
R1
820k
C2
560pF
C5
22uF
20V
SVP
D1
CMPSH-3
C1
4.7uF
10V
X5R
COMP
U1
MAX1954
C3
15pF
DH
10
C4
0.1uF
N1
1/2
FDS
6930A
L1
6.8uH
DO3316P
-682
1.9V@2.5A
VOUT
LX
DL
PGND
FB
GND
N1
1/2
FDS
6930A
6
7
R4
4.3
C6
470pF
R2
14.0k
C7
680uF
4V
TPB
R3
10.0k
1954_1a9
RWY
3/03/03
Vin
5.0127
5.0126
5.0126
5.0127
5.0127
20MHz BW
Iin
0.0036
0.0040
0.0040
0.0038
0.0038
Vhsd
8.006
6.984
8.014
12.074
13.239
Ihsd
0.0066
0.7654
0.6686
0.4470
0.4087
Vout
1.895
1.895
1.894
1.895
1.896
30mVpp
Iout
0
2.5059
2.5059
2.5060
2.5060
Efficiency
0.885
0.883
0.877
0.875
BILL OF MATERIALS
7V to 13.2V Input
1.9V @ 2.5A Output
3/03/03
1954_1a9
DESIGNATION
C1
QTY
1
C2
C3
C4
1
1
1
C5
C6
C7
1
1
D1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 20SVP22M
Sanyo 4TPB680M
6.8uH 4.6A Inductor
Fairchild FDS6930A
4.5V to 5.5V
VIN
C1
10uF
6V
X5R
5
IN
1
HSD
BST
R1
120k
COMP
U1
MAX1954
C3
100pF
C2
1nF
DH
EN
10
C4
0.1uF
N1A
1/2
FDS
6890A
L1
2.7uH
DO3316P
-272HC
1.2V@3.5A
VOUT
LX
DL
R5
10k
C5
22uF
6V
X5R
D1
CMPSH-3
PGND
Q2
MMBT
3904
R6
10k
GND
FB
N1B
1/2
FDS
6890A
6
7
R4
4.7
C6
1.5nF
R2
5.11k
C7
470uF
4V
TPE
D2
EC10
QS03L
TO
3.3V
R3
10.0k
1954_1d2
RWY
11/26/03
Vin
5.01
4.48
5.01
5.51
20MHz BW
Iin
0.027
1.073
0.963
0.878
Vout
1.216
1.214
1.213
1.212
30mVpp
1.2V should be enabled at least 2msec before 3.3V.
Iout
0
3.5
3.5
3.5
Efficiency
0.884
0.880
0.877
BILL OF MATERIALS
4.5V to 5.5V Input
1.2V @ 3.5A Output
11/26/03
1954_1d2
DESIGNATION
C1
QTY
1
C2
C3
C4
1
1
1
C5
C6
C7
1
1
D1
D2
L1
N1
Q2
R1
R2
R3
R4
R5,R6
U1
1
1
1
1
2
1
DESCRIPTION
Sanyo 4TPE470ML
Nihon EC10QS03L
2.7uH 7A Inductor
18m Ohm 30V N-ch Dual MOSFET (SO-8)
Fairchild FDS6890A
Fairchild MMBT3904
4.5V to 5.5V
VIN
C3
1uF
10V
X5R
R1
1M
C1
820pF
5
IN
COMP
D1
CMPSH-3
1
HSD
10
BST
U1
MAX1954
C2
39pF
DH
C4
0.1uF
LX
PGND
GND
FB
N1B
1/2
FDS
6990A
6
7
L1
3.3uH
DO5022P
-332HC
N1A
1/2
FDS
6990A
8
9
DL
C5
820uF
10V
MV-AX
(2x)
R2
8.87k
R4
2.7
C6
1.2nF
1.5V @ 4A
VOUT
C7
820uF
10V
MV-AX
(2x)
R3
10.0k
1954_1e5
RWY
12/30/02
Vin
5.0073
4.4900
5.0078
5.522
20MHz BW
Iin
0.0172
1.5155
1.3591
1.2327
Vout
1.5064
1.5041
1.5043
1.5041
40mVpp
Iout
0
4.009
4.009
4.009
Efficiency
0.886
0.886
0.886
C8
0.1uF
BILL OF MATERIALS
4.5V to 5.5V Input
1.5V @ 4A Output
12/30/02
1954_1e5
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4,C8
C5,C7
C6
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 10MV820AX
3.3uH 17A Inductor
Fairchild FDS6990A
+3.0V to +3.6V
VIN
C3
4.7uF
10V
X5R
R1
220k
C1
820pF
5
IN
COMP
D1
CMPSH-3
1
HSD
10
BST
U1
MAX1954
C2
47pF
DH
C5
470uF
6V
TPB
(2x)
C4
0.1uF
L1
1.0uH
CEP125
-1R0
N1
Si
4866DY
8
9
LX
DL
PGND
GND
FB
N2
Si
4866DY
6
7
R2
12.7k
R4
1.8
C6
2.2nF
1.8V@10A
VOUT
C7
680uF
4V
TPB
(2x)
R3
10.0k
1954_1e8
RWY
11/19/02
Vin
3.2969
2.9900
3.3014
3.6020
20MHz BW
Iin
0.0275
6.623
6.012
5.520
Vout
1.8109
1.8075
1.8080
1.8083
50mVpp
Iout
0
10.019
10.020
10.020
Efficiency
0.914
0.913
0.911
BILL OF MATERIALS
3V to 3.6V Input
1.8V @ 10A Output
11/21/02
1954_1e8
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5
C6
C7
1
2
D1
L1
N1,N2
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 6TPB470M
Sanyo 4TPB680M
1uH 20A Inductor
Sumida CEP125-1R0
Siliconix Si4866DY
3V to 3.6V
VIN
D1
BAT-54
C3
10uF
6V
X5R
5
IN
BST
R1
68k
C1
1.8nF
1
HSD
COMP
U1
MAX1954A
C2
180pF
DH
C5
820uF
6V
MB-EXR
10
C6
22uF
6V
L1
N1
X5R 1.2uH
Si4866DY
CDEP105-H
C4
0.1uF
1.2V@7A
VOUT
LX
DL
PGND
GND
FB
N2
Si4866DY
R2
5.11k
R4
2.7
C8
1000uF
4V
MB-EXR
C7
3.3nF
R3
10.0k
1954_1f2
RWY
1/27/04
Vin
3.31
2.98
3.30
3.62
20MHz BW
Iin
0.033
3.21
2.90
2.64
Vout
1.207
1.202
1.201
1.201
60mVpp
Iout
0
7
7
7
Efficiency
0.880
0.879
0.880
BILL OF MATERIALS
3V to 3.6V Input
1.2V @ 7A Output
1/27/04
1954_1f2
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5
C6
C7
C8
1
1
D1
L1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
820uF 6V polymer electrolytic capacitor
Sanyo 6MB820EXR
1000uF 4V polymer electrolytic capacitor
Sanyo 4MB1000EXR
BAT-54
1.2uH 21A Inductor
Sumida CDEP105-1R2-H
MAX1954AEUB (10-uMAX)
3.0V to 5.5V
VIN
C2
4.7uF
10V
X5R
R1
27k
5
IN
COMP
D1
CMPSH-3
1
HSD
10
BST
U1
MAX1954
C1
1nF
DH
C3
0.1uF
LX
PGND
GND
FB
N1B
1/2
FDS
8926A
6
7
L1
6.0uH
DO5022P
-602HC
N1A
1/2
FDS
8926A
8
9
DL
C4
22uF
6V
X5R
R2
8.87k
R4
2.7
C5
1.2nF
1.5V @ 2A
VOUT
C7
22uF
6V
X5R
(2x)
R3
10.0k
1954_1f5
RWY
1/23/03
Vin
3.2980
2.9932
3.2942
3.6076
4.5046
5.514
20MHz BW
Iin
0.0122
1.0991
0.9993
0.9135
0.7355
0.6067
Vout
1.5071
1.5056
1.5057
1.5057
1.5053
1.5021
10mVpp
Iout
0
2.010
2.010
2.010
2.010
2.010
Efficiency
0.920
0.919
0.918
0.913
0.903
BILL OF MATERIALS
3.0V to 5.5V Input
1.5V @ 2A Output
1/23/03
1954_1f5
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
3
C5
D1
1
1
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
6.0uH 12A Inductor
Fairchild FDS8926A
+4.5V to +5.5V
VIN
C3
1uF
10V
X5R
R1
75k
C1
680pF
5
IN
COMP
D1
CMPSH-3
1
HSD
10
BST
U1
MAX1954
C2
22pF
DH
C4
0.1uF
C5
22uF
6V
X5R
(2x)
L1
2uH
CDEP105
-2R0
N1
FDS
6690A
8
9
LX
DL
PGND
N2
FDS
6690A
6
7
R4
2.7
C6
1.2nF
GND
FB
1.8V@6.5A
VOUT
C7
220uF
4V
SP
R2
12.7k
R3
10.0k
1954_1f8
RWY
12/19/02
Vin
4.9921
4.4980
4.9955
5.501
20MHz BW
Iin
0.0246
2.9554
2.6618
2.4183
Vout
1.8088
1.8046
1.8049
1.8050
40mVpp
Iout
0
6.515
6.515
6.515
Efficiency
0.884
0.884
0.884
BILL OF MATERIALS
4.5V to 5.5V Input
1.8V @ 6.5A Output
12/20/02
1954_1f8
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4
C5
1
2
C6
C7
1
1
D1
L2
N1,N2
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 4TPE220MF
2uH 15A Inductor
Sumida CDEP105-2R0
Fairchild FDS6690A
4.5V to 5.5V
VIN
C3
4.7uF
6V
X5R
5
IN
1
HSD
BST
R1
100k
C1
1nF
2 COMP
U1
MAX1954A
C2
68pF
DH
LX
DL
PGND
4 GND
FB
10
D1
BAT54
C5
470uF
10V
SP
C4
0.1uF
C6
22uF
10V
X5R
N1
FDS
6690
8
9
N2
FDS
6690
6
7
L1
2.2uH
R4
2.7
C7
1nF
R2
5.11k
1.2V @ 6A
VOUT
C8
560uF
4V
SP
R3
10.0k
1954_1g2
RWY
7/28/04
Vin
5.007
4.4935
5.009
5.522
20MHz BW
Iin
0.0165
1.8761
1.6674
1.5084
Vout
1.208
1.204
1.203
1.203
30mVpp
Iout
0
6
6
6
Efficiency
0.861
0.866
0.867
C9
0.1uF
BILL OF MATERIALS
4.5V to 5.5V Input
1.2V @ 6A Output
7/28/04
1954_1g2
DESIGNATION
C1,C7
C2
C3
QTY
2
1
1
C4,C9
C5
C6
C8
D1
L1
N1,N2
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
BAT54
Pulse Engineering PG0077.202
Fairchild FDS6690
MAX1954AEUB (10-uMAX)
18V to 24V
VIN
C2
0.1uF
C3
2.2uF
10V
4
3
VCC
5
VL
BST
IN
D1
CMPSH-3
R1
220k
U1
MAX8546
1
COMP
DH
10
C4
0.1uF
GND
FB
R2
2.2
N1
1/2
FDS
6930A
6
7
C6
1uF
50V
X7R L1
33uH
DO3340P
-333
12V@2A
VOUT
C7
220uF
35V
MV-AX
R3
140k
R4
10.0k
8546_12c
RWY
10/07/03
Vin
21.07
18.00
21.09
24.06
20MHz BW
N1
1/2
FDS
6930A
LX
DL
C1
3.9nF
C5
220uF
35V
MV-AX
D2
CMPSH-3
Iin
0.012
1.38
1.18
1.04
Vout
11.88
11.75
11.75
11.77
30mVpp
Iout
0
2
2
2
Efficiency
0.946
0.944
0.941
BILL OF MATERIALS
18V to 24V Input
12V @ 2A Output
10/07/03
8546_12c
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5,C7
D1,D2
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 35MV220AX
55m Ohm Dual N-chan MOSFET (SO-8)
Fairchild FDS6930A
18V to 20V
VIN
C2
0.1uF
C3
2.2uF
10V
4
D2
CMPSH-3
3
VCC
5
VL
BST
IN
D1
CMPSH-3
R1
220k
U1
MAX8546
1
COMP
DH
C4
0.1uF
GND
FB
R2
2.2
N1
1/2
FDS
6990A
6
7
12V@4A
VOUT
C7
220uF
35V
MV-AX
(2x)
R3
140k
R4
10.0k
8546_12b
RWY
10/07/03
Vin
19.009
18.00
19.02
20.03
20MHz BW
N1
1/2
FDS
6990A
LX
DL
C1
3.3nF
10
C5
220uF
35V
MV-AX
(2x)
C6
1uF
50V
X7R L1
15uH
DO3340P
-153
Iin
0.021
2.76
2.63
2.50
Vout
11.87
11.81
11.81
11.81
20mVpp
Iout
0
4
4
4
Efficiency
0.951
0.944
0.943
BILL OF MATERIALS
18V to 20V Input
12V @ 4A Output
10/07/03
8546_12b
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5,C7
D1,D2
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Sanyo 35MV220AX
23m Ohm Dual N-chan MOSFET (SO-8)
Fairchild FDS6990A
19V
VIN
C2
0.1uF
C3
2.2uF
10V
4
D1
CMPSH-3
R1
91k
3
VCC
5
VL
BST
IN
U1
MAX8546
1
COMP
DH
10
C4
0.1uF
N1
1/2
FDS
6990A
9
8
LX
DL
C1
2.7nF
C5
10uF
25V
X5R
(2x)
D2
CMPSH-3
GND
N1
1/2
FDS
6990A
6
7
L1
6.0uH
DO5022P
-602
R6
2.7
5V@6A
VOUT
C7
220uF
10V
T495
(2x)
C6
1.2nF
FB
R2
53.6k
R3
10.0k
8546_5b
RWY
3/25/03
Vin
19.002
19.028
20MHz BW
Iin
0.0259
1.7328
Vout
5.06
5.05
80mVpp
Iout
0
6.007
Efficiency
0.920
BILL OF MATERIALS
19V Input
5V @ 6A Output
3/25/03
8546_5b
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5
C6
C7
1
2
D1,D2
L1
N1
R1
R2
R3
R4
U1
1
1
1
1
1
DESCRIPTION
Kemet T495X227M010AS
Fairchild FDS6990A
11.4V to 12.6V
VIN
C2
0.1uF
C3
2.2uF
10V
4
D1
CMPSH-3
R1
33k
3
VCC
5
VL
BST
IN
U1
MAX8546
1
COMP
DH
10
C4
0.1uF
LX
GND
N1
1/2
FDS
6990A
9
8
DL
C1
6.8nF
C5
15uF
25V
TQC
(2x)
D2
CMPSH-3
R2
3.3
R3
3.3
N1
1/2
FDS
6990A
L1
6.0uH
DO5022P
-602
R6
2.7
5V@5A
VOUT
C7
220uF
10V
T495
(2x)
C6
1.2nF
FB
R4
53.6k
R5
10.0k
8546_5a
RWY
3/11/03
Vin
12.013
11.378
12.010
12.625
20MHz BW
Iin
0.0217
2.3565
2.2382
2.1329
Vout
5.03
5.00
5.00
5.00
70mVpp
Iout
0
5.0027
5.0032
5.0032
Efficiency
0.933
0.931
0.929
BILL OF MATERIALS
5V @ 5A Output
3/11/03
8546_5a
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5
C6
C7
1
2
D1,D2
L1
N1
R1
R2,R3
R4
R5
R6
U1
1
2
1
1
1
1
DESCRIPTION
Sanyo 25TQC15M
Fairchild FDS6990A
8V to 22V
VIN
C2
0.1uF
50V
R1
82k
C3
2.2uF
10V
4
3
VCC
5
VL
BST
IN
U1
MAX8546
1
COMP
DH
10
C4
0.1uF
LX
GND
L1
22uH
CDRH127
-220
N1
1/2
FDS
6930A
9
8
DL
C1
6.8nF
C5
100uF
35V
MV-AX
D1
CMPSH-3
R2
4.7
R3
4.7
N1
1/2
FDS
6930A
R6
4.7
C7
470uF
10V
MV-AX
3.3V@1.2A
VOUT
C8
0.1uF
C6
330pF
FB
R4
31.6k
R5
10.0k
8546_3f3
RWY
2/19/04
Vin
15.02
7.98
12.05
15.03
22.00
20MHz BW
Iin
0.006
0.53
0.35
0.29
0.20
Vout
3.29
3.27
3.26
3.26
3.26
35mVpp
Iout
0
1.21
1.21
1.21
1.21
Efficiency
0.936
0.935
0.905
0.897
BILL OF MATERIALS
8V to 22V Input
3.3V @ 1.2A Output
2/19/04
8546_3f3
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4,C8
C5
1
1
C6
C7
1
2
D1
L1
N1
R1
R2,R3,R6
R4
R5
U1
1
2
1
1
1
DESCRIPTION
Sanyo 35MV100AX
Sanyo 10MV470AX
Sumida CDRH127-220
Fairchild FDS6930A
10.8V to 13.2V
VIN
C9
0.1uF
C1
1uF
10V
C12
1uF
4
D2
CMPSH-3
R3
10
3
VCC
D1
CMPSH-3
5
VL
BST
IN
U1
MAX8546
R4
390k
COMP
DH
Q1
MMBT
3904
R5
10k
10
C5
0.1uF
LX
GND
R8
3
N1B
1/2
FDS
6982A
L1
7.2uH
CEP125
N1A
1/2
FDS
6982A
R9
3
3.3V@4A
VOUT
C8
0.1uF
C6
330uF
6V
TPE
C13
1.5nF
SHDN
R6
10k
C4
1uF
DL
C10
680pF
C2,C3
10uF
16V
X5R
FB
R1
12.7k
R2
4.02k
8546_3b3
RWY
8/19/03
Vin
12.00
10.75
12.01
13.25
20MHz BW
Iin
0.01
1.29
1.16
1.06
Vout
3.26
3.25
3.26
3.26
30mVpp
Iout
0
4
4
4
Efficiency
0.937
0.936
0.928
BILL OF MATERIALS
3.3V @ 4A Output
8/19/03
8546_3b3
DESIGNATION
C1
QTY
1
C2,C3
C4,C12
C6
C5,C8,C9
C10
C13
D1,D2
3
1
1
2
L1
N1
Q1
R1
R2
R3
R4
R5,R6
R8
R9
U1
1
1
1
1
2
1
1
1
DESCRIPTION
Sanyo 6TPE330MIL
Sumida CEP125-7R2-H
FDS6982A
Fairchild MMBT3904
9V to 20V
VIN
C2
0.1uF
C3
2.2uF
10V
4
D1
CMPSH-3
R1
68k
3
VCC
5
VL
BST
IN
U1
MAX8546
1
COMP
DH
10
C4
0.1uF
LX
GND
N1
FDS
6612A
9
8
DL
C1
3.3nF
C5
10uF
25V
X5R
(2x)
D2
CMPSH-3
R2
2.2
R3
2.2
N2
FDS
6690A
L1
3.9uH
DO5022P
-392
R6
2.7
2.5V@6A
VOUT
C7
470uF
4V
TPE
C6
1.2nF
FB
R4
21.5k
R5
10.0k
8546_2a5
RWY
5/02/03
#1 - 5/13/03
Vin
14.99
8.96
15.01
20.05
20MHz BW
Iin
0.021
1.914
1.160
0.885
Vout
2.502
2.518
2.504
2.500
50mVpp
Iout
0
6.01
6.01
6.01
#2 - 5/13/03
Vin
14.99
8.95
14.99
20.05
20MHz BW
Iin
0.021
1.867
1.129
0.857
Vout
2.492
2.492
2.481
2.476
50mVpp
Iout
0
6.01
6.01
6.01
Efficiency
0.882
0.864
0.847
Efficiency
0.896
0.881
0.866
BILL OF MATERIALS
9V to 20V Input
2.5V @ 6A Output
5/02/03
8546_2a5
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5
C6
C7
1
1
D1,D2
L1
N1
N2
R1
R2,R3
R4
R5
R6
U1
1
2
1
1
1
1
DESCRIPTION
Sanyo 4TPE470M
Fairchild FDS6612A
Fairchild FDS6690A
2.7 Ohm 0.25W 5% resistor (1206)
10.8V to 13.2V
VIN
C9
0.1uF
C1
1uF
10V
C12
1uF
4
D2
CMPSH-3
R3
10
3
VCC
D1
CMPSH-3
5
VL
BST
IN
U1
MAX8546
R4
43k
COMP
DH
Q1
MMBT
3904
R5
10k
10
C5
0.1uF
LX
GND
R8
3
N1B
1/2
FDS
6982
L1
3.2uH
CEP125
N1A
1/2
FDS
6982
R9
3
1.5V@5A
VOUT
C7
1000uF
2.5V
TPB
C13
1.5nF
SHDN
R6
10k
C4
1uF
DL
C10
6.8nF
C2,C3
10uF
16V
X5R
FB
R1
8.87k
R2
10.0k
8546_1b5
RWY
9/04/03
Vin
12.00
10.75
12.01
13.25
20MHz BW
Iin
0.013
0.803
0.723
0.660
Vout
1.503
1.501
1.501
1.501
60mVpp
Iout
0
5.02
5.02
5.03
Efficiency
0.873
0.868
0.863
BILL OF MATERIALS
1.5V @ 5A Output
9/04/03
8546_1b5
DESIGNATION
C1
QTY
1
C2,C3
C4,C12
C5,C9
C7
2
1
C10
C13
D1,D2
1
1
2
L1
N1
Q1
R1
R2
R3
R4
R5,R6
R8,R9
U1
1
1
1
1
2
1
1
DESCRIPTION
Sanyo 2R5TPB1000M
Sumida CEP125-3R2-U
FDS6982
Fairchild MMBT3904
C1
1uF
10V
3V to 5.5V
VIN
R3
10
C9
0.1uF
C12
1uF
4
D2
CMPSH-3
3
VCC
D1
CMPSH-3
5
VL
BST
IN
U1
MAX8546
R4
56k
COMP
DH
Q1
MMBT
3904
R5
10k
10
LX
GND
R8
3
N1B
1/2
FDS
6898A
L1
1.8uH
PA0738
N1A
1/2
FDS
6898A
R9
2.7
1.2V@6A
VOUT
C6,C7
1500uF
6V
MBZ
C13
1.2nF
SHDN
R6
10k
C4
1uF
C5
0.1uF
DL
C10
4.7nF
C2,C3
1000uF
10V
MBZ
FB
R1
5.11k
R2
10.0k
8546_1b2
RWY
8/01/03
Vin
4.50
2.97
3.60
4.50
5.52
20MHz BW
Iin
0.03
2.91
2.38
1.90
1.55
Vout
1.207
1.214
1.203
1.202
1.202
25mVpp
Current limit is ~11A. For 1.3V output change R1 = 6.34k.
Iout
0
6
6
6
6
Efficiency
0.843
0.842
0.844
0.843
BILL OF MATERIALS
3V to 5.5V Input
1.2V @ 6A Output
8/12/03
8546_1b2
DESIGNATION
C1,C4,C12
QTY
1
C2,C3
C6,C7
C5,C9
C10
C13
D1,D2
2
1
1
2
L1
N1
Q1
R1
R2
R3
R4
R5,R6
R8
R9
U1
1
1
1
1
2
1
1
1
DESCRIPTION
Rubycon MBZ (10x12.5)
Rubycon MBZ (10x12.5)
Pulse Engineering PA0738
FDS6898A
Fairchild MMBT3904
4.5V to 5.5V
VIN
C2
0.1uF
C3
2.2uF
10V
4
D2
CMPSH-3
3
VCC
5
VL
BST
IN
D1
CMPSH-3
U1
MAX8546
R1
120k
COMP
DH
10
R2
4.7
N1
IRF
7821
L1
1.2uH
CDEP134H
-1R2
1.8V@10A
VOUT
LX
GND
FB
D3
EC10
QS03L
N2
IRF
7821
R5
1.5
C8
1200uF
10V
MV-AX
(4x)
C7
2.2nF
R3
12.7k
R4
10.0k
8546_1a8
RWY
7/11/03
Vin
5.00
4.49
4.99
5.51
20MHz BW
C6
10uF
6V
X5R
C4
0.1uF
9
8
DL
C1
3.3nF
C5
1200uF
10V
MV-AX
(3x)
Iin
0.04
4.61
4.14
3.74
Current limit is ~13A.
Vout
1.793
1.785
1.783
1.781
50mVpp
Iout
0
10.04
10.04
10.04
Efficiency
0.866
0.866
0.868
BILL OF MATERIALS
4.5V to 5.5V Input
1.8V @ 10A Output
7/11/03
8546_1a8
DESIGNATION
C1
C2,C4
C3
QTY
1
2
1
C5,C8
C6
C7
D1,D2
1
2
D3
L1
N1,N2
R1
R2
R3
R4
R5
U1
1
1
1
1
1
1
DESCRIPTION
Sanyo 10MV1200AX
Nihon EC10QS03L
Sumida CDEP134H-1R2
12V to 20V
VIN
C4
1uF
10V
C2
1uF
35V
X5R
C3
0.1uF
3
VCC
D2
CMPSH-3
5
VL
BST
IN
D1
CMPSH-3
R1
47k
R2
10
U1
MAX8546
1
COMP
DH
C5
0.1uF
9
8
LX
DL
C1
4.7nF
10
C6
10uF
25V
X5R
GND
R3
2.2
R4
2.2
N1B
1/2
FDS
6990A
N1A
1/2
FDS
6990A
L1
3.3uH
CEI122
-3R3
R5
2.7
1.5V@4A
VOUT
C8
680uF
2.5V
TPE
C7
1.2nF
FB
R7
10.0k
8546_1a5
RWY
5/02/03
Vin
15.00
11.94
15.00
20.07
20MHz BW
R6
8.87k
Iin
0.016
0.610
0.495
0.382
Vout
1.504
1.489
1.487
1.486
50mVpp
Iout
0
4
4
4
Efficiency
0.818
0.801
0.752
BILL OF MATERIALS
12V to 20V Input
1.5V @ 4A Output
5/02/03
8546_1a5
DESIGNATION
C1
C2
QTY
1
1
C3,C5
C4
2
1
C6
C7
C8
1
1
D1,D2
L1
N1
R1
R2
R3,R4
R5
R6
R7
U1
1
1
2
1
1
1
1
DESCRIPTION
Sanyo 2R5TPE680MIL
Sumida CEI122-3R3
Fairchild FDS6990A
2.7 Ohm 0.25W 5% resistor (1206)
12V to 20V
VIN
C4
1uF
10V
C2
1uF
35V
C3
0.1uF
3
VCC
D2
CMPSH-3
5
VL
BST
IN
D1
CMPSH-3
R1
39k
R2
10
U1
MAX8546
1
COMP
DH
C5
0.1uF
9
8
LX
DL
C1
5.6nF
10
C6
10uF
25V
X5R
GND
R3
2.2
R4
2.2
N1B
1/2
FDS
6990A
N1A
1/2
FDS
6990A
L1
3.3uH
CEI122
-3R3
R5
2.7
1.2V@4A
VOUT
C8
680uF
2.5V
TPE
C7
1.2nF
FB
R7
10.0k
8546_1a2
RWY
5/02/03
Vin
15.00
11.95
15.00
20.07
20MHz BW
R6
5.11k
Iin
0.014
0.507
0.413
0.320
Vout
1.204
1.193
1.191
1.190
40mVpp
Iout
0
4
4
4
Efficiency
0.788
0.769
0.741
BILL OF MATERIALS
12V to 20V Input
1.2V @ 4A Output
5/02/03
8546_1a2
DESIGNATION
C1
C2
QTY
1
1
C3,C5
C4
2
1
C6
C7
C8
1
1
D1,D2
L1
N1
R1
R2
R3,R4
R5
R6
R7
U1
1
1
2
1
1
1
1
DESCRIPTION
Sanyo 2R5TPE680MIL
Sumida CEI122-3R3
Fairchild FDS6990A
2.7 Ohm 0.25W 5% resistor (1206)
5.5V to 24V
VIN
C4
2.2uF
10V
R2
10
C3
0.1uF
C2
1uF
35V
R1
6.8k
3
VCC
D1
CMPSH-3
5
VL
BST
IN
U1
MAX8546
1
COMP
DH
C5
0.1uF
R3
3.3
8
LX
DL
C1
39nF
10
GND
R4
3.3
C6
330uF
35V
MV-AX
N1A
1/2
FDS
6912A
N1B
1/2
FDS
6912A
L1
4.7uH
FDV0630
R7
6.8
0.9V@3A
VOUT
C8
2.2uF
10V
X5R
C9
680uF
10V
MV-AX
C7
680pF
FB
R5
1.27k
R6
10.0k
8546_0b9
RWY
1/27/04
Vin
12.02
5.48
12.02
18.01
20MHz BW
Iin
0.007
0.65
0.30
0.20
Vout
0.889
0.896
0.896
0.895
55mVpp
Iout
0
3
3
3
Efficiency
0.755
0.745
0.745
12.03
5.48
12.03
18.02
24.11
20MHz BW
0.015
1.52
0.69
0.46
0.35
2.480
2.478
2.476
2.475
2.475
110mVpp
0
3
3
3
3
0.893
0.895
0.896
0.880
R5 = 21.5k for 2.5V output; circuit is reaching minimum duty cycle above 18V input for 0.9V output.
BILL OF MATERIALS
5.5V to 24V Input
0.9V @ 3A Output
1/27/04
8546_0b9
DESIGNATION
C1
C2
QTY
1
1
C3,C5
C4,C8
2
1
C6
C7
C9
1
1
D1
L1
N1
R1
R2
R3,R4
R5
R6
R7
U1
1
1
2
1
1
1
1
DESCRIPTION
Sanyo 33MV330AX
Sanyo 10MV680AX
Toko FDV0630-4R7
Fairchild FDS6912A
3.0V to 5.5V
VIN
C3
2.2uF
10V
R2
10
C2
0.1uF
R1
18k
3
VCC
5
VL
BST
IN
U1
MAX8546
1
COMP
DH
10
C4
0.1uF
R3
3.3
8
LX
DL
C1
15nF
C5
680uF
10V
MV-AX
D1
CMPSH-3
GND
R4
3.3
N1A
1/2
FDS
8926A
N1B
1/2
FDS
8926A
C6
22uF
6V
X5R
L1
4.3uH
FDV0630
R7
4.7
0.9V@3A
VOUT
C8
2.2uF
10V
X5R
C9
680uF
10V
MV-AX
C7
1.5nF
FB
R5
1.27k
R6
10.0k
8546_0a9
RWY
1/19/04
Vin
3.60
2.98
3.61
4.50
5.52
20MHz BW
In
0.012
1.20
0.98
0.79
0.65
Vout
0.899
0.906
0.897
0.897
0.896
50mVpp
Iout
0
3
3
3
3
0.760
0.761
0.757
0.749
3.60
2.98
3.30
3.60
4.50
5.52
20MHz BW
0.014
2.59
2.54
2.33
1.87
1.53
2.496
2.268
2.495
2.495
2.495
2.494
75mVpp
0
3
3
3
3
3
0.882
0.893
0.892
0.890
0.886
R5 = 21.5k for 2.5V out; circuit is in dropout for 2.98V input and 2.5V output at 3A.
Efficiency
BILL OF MATERIALS
3.0V to 5.5V Input
0.9V @ 3A Output
1/19/04
8546_0a9
DESIGNATION
C1
C2,C4
C3,C8
QTY
1
2
2
C5,C9
C6
C7
D1
1
1
L1
N1
R1
R2
R3,R4
R5
R6
R7
U1
1
1
2
1
1
1
1
DESCRIPTION
Sanyo 10MV680AX
Toko FDV0630-4R3
Fairchild FDS8926A
4.75V to 5.25V
VIN
D1
BAT54
C2
4.7uF
10V
X5R
1
R1
68k
ILIM
U1
MAX1953
C7
0.01uF
DH
10
8
9
C3
0.1uF
N1A
1/2
FDS
6930A
R2
4.7
C4
22uF
6V
L1
X5R 3.3uH
CDRH4D28
-3R3
2.5V@1.5A
VOUT
LX
Q2
R7
MMBT
100k
3904
1.8V
BST
COMP
C1
390pF
R6
470k
5
IN
Q1
MMBT
3904
DL
PGND
GND
FB
N1B
1/2
FDS
6930A
6
7
R3
21.5k
R5
4.7
C6
22uF
6V
X5R
C5
330pF
R4
10.0k
1953_2j5
RWY
3/2/04
Vin
5.01
4.74
5.01
5.26
20MHz BW
Iin
0.019
0.86
0.81
0.76
Vout
2.451
2.466
2.457
2.447
<20mVpp
Iout
0
1.5
1.5
1.5
Efficiency
0.907
0.908
0.918
BILL OF MATERIALS
2.5V @ 1.5A Output
3/2/04
1953_2j5
DESIGNATION
C1
C2
QTY
1
1
C3
C4,C6
1
2
C5
C7
D1
1
1
1
L1
N1
Q1,Q2
R1
R2,R5
R3
R4
R6
R7
U1
1
1
1
1
1
1
1
DESCRIPTION
BAT54
Sumida CDRH4D28-3R3
Fairchild FDS6930A
Fairchild MMBT3904
MAX8578 5V Input to 1.05V at 3A for Notebook

Vin
4.5V to 5.5V
R1
D1
C1
10 OCSET
SS
EN
C4
EN
DH
LX
DL
GND
MAX8578
1 FB
R2
BST
3 VCC U1
Q1/2
C2
L1
C3
Q1/2
Vout
1.05V/3A
R5
R3
R4
C7
C6
C5
C8
C9
Figure 1: Asustek/Sony NB 5Vin, 1.05V/3A out (Fs = 300KHz)
Figure 1: 5V Input 1.05V/3 A Output, Fs = 300KHz

R1
R2
R3 (optional)
R4
R5
C1,C4
C2
C3,C9
C6 (optional)
C5
C7
C8
D1
L1 (note 2)
Q1,Q2
U1
Notes
Chien Nguyen
11/2/2004
1
1
1
1
1
2
1
1
1
1
1
1
1
1
1
1
Resistor: 4.53k 1%
Resistor: 3.09k, 1%
Resistor: not used
Resistor: 4.99k 1%
Resistor: 10, 5%
Capacitor 0.01uF/10V, X7R Ceramic, 0603
Capacitor 10uF/10V, X7R Ceramic, 1206
Not used
Capacitor 100uF/4V/18mOhm POS
Capacitor: 0.027uF/10V X7R, 0603
Diode Fast Switching 100V/250mA Philip BAS316
Inductor, 2.8uH/10.7mOhms, Toko : 919AS-2R8M
MOSFET Si4814DY
MAX8578EUB
1 of 3
8/25/2005
Figure1: CH1 = Vout, CH2 = Vfb, Ch3 = Iout (1A.div)
Figure2: Same as figure 1, but cursor to measure Vfb instead of frequency
Chien Nguyen
11/2/2004
2 of 3
8/25/2005
Figure 3: Same as Figure 2, but now Iout is at~3.4A
Figure 4: same as Figure 3, but cursor now measure frequency
Chien Nguyen
11/2/2004
3 of 3
8/25/2005
MAX8578, 9V to 19V Input to 1.0V/1.2V at 4.5A

Vin
9V to 19V
ON
OFF
C1
R1
FB
OCSET
10
SS
EN
DH
LX
BST
R3
Q3
R9
R2
3 VCC
1.2V
1.0V
C4
4 GND
R4
MAX8578
C3
DL
R8
Q2
R5
R6
C6
Figure 1: 9-19Vin, 1.0V-1.2V/4.5A out (Fs ~ 100KHz for 1Vout)
Typical components for Figure 1:

Component
Qty.
Description/Vendor Part Number
C1, C3, C6
Capacitor, 0.01uF, 10V, X7R Ceramic. Kemet: C0603C103M8RAC
C2
Capacitor, 10uF, 25V,X5R Ceramic, TDK: C3225X5R1E106M
C4
Capacitor, 4.7uF, 6.3V, X5R Ceramic. Taiyo Yuden: JMK212BJ475MG
C5, C8
C7
Capacitor, 470uF, 2.5V, 10m, , POS, Sanyo: 4TPD470M
D1
Diode, Switching, 100V, 200mA. Central: CMPD914-HUN
Q1,Q2
Transistor, Dual SO-8, NMOSFET: 30V Vishay: Si4816DY
Q3
Transistor, NMOSFET 2N7002 SOT-23 Central: 2N7002-HUN
L1
Inductor, 4.7 uH/40m/5.5A. Vishay: IHLP2525CZRZ-4R7
R1
Resistor, 3.92k, 1%
R2
Resistor, 4.75 k, 1%
R3
Resistor, 1K, 5%
R4
Resistor, 20k, 5%
R5
Resistor, 69.8k, 1%
R6
Resistor, 10, 5%
R7
Resistor, 2.8k, 1%
R8
Resistor, 4.7, 5%
R9
Resistor, 8.06k, 1%
12/17/2004
1 of 9
C7
D1
R7
CN
Vout
1.0V/4.5A
L1
C5
5Vin
C2
Q1
C8
Load Regulation: (8mV from No load to 4.5A)

Vin
I out
Vout
12V
0A
1.011V
12V
4.5A
1.002V
Line Regulation: (3mV from 9V to 19V)

Vin
I out
Vout
9V
2.25A
1.004V
19V
2.25A
1.007V
Ripple and Noise:
Figure 1: Ripple and noise at 19Vinput and 0A out. Ch1 = VLX, CH2 = Vout (AC couple, Vout=1.0V), CH3 =
Iout (1A/div). Switching Frequency = 88.3kHz.
Figure 2: Ripple and noise at 19Vinput and 4.5A out Ch1 = VLX, CH2=Vout (AC couple, Vout=1.0V), CH3 =
Iout (1A/div). Switching Frequency = 113kHz
CN
12/17/2004
2 of 9
Figure 3: Ripple and noise at 9Vinput and 4.5A out. Ch1 = VLX, CH2= Vout (AC couple, Vout=1.2V), CH3 =
Iout (1A/div). Switching Frequency = 130kHz.
Step Load Response:
Figure 4: Step Load Response at 12 V input and 1.75A<->4.5A, 5A/uS. CH2 = Vout (AC couple), CH3 = Iout
(1A/div)
CN
12/17/2004
3 of 9
Switching Frequency:
Figure 5: Switching Frequency (93.3kHz)at 12V input and 1.0V/0.5A out. Ch1 = VLX, CH2= Vout (AC couple)
CH3 = Iout (1A/div)
Figure 6: Switching Frequency (118kHz) at 12V input and 1.0V/4.5A out. Ch1 = VLX, CH2= Vout (AC couple)
CH3 = Iout (2A/div)
CN
12/17/2004
4 of 9
Figure 7: Switching Frequency (109kHz)at 12V input and 1.2V/0.5A out. Ch1 = VLX, CH2= Vout (AC couple)
CH3 = Iout (1A/div)
Figure 8: Switching Frequency (130kHz)at 12V input and 1.2V/4.5A out. Ch1 = VLX, CH2= Vout (AC couple)
CH3 = Iout (1A/div)
Voltage Transition from 1.0V <->1.2V selection:

CN
12/17/2004
5 of 9
Figure 9: 1.0V to 1.2V Transition at 9V input and full load. CH1 = V at R3 input, CH2 = Vout, CH3 = Iout
(1A/div)
Figure 10: 1.2V to 1.0V Transition at 9V input and full load. CH1 = V at R3 input, CH2 = Vout, CH3 = Iout
(1A/div)
CN
12/17/2004
6 of 9
Figure11: 1.0V to 1.2V Transition at 19V input and 50% load. CH1 = V at R3 input, CH2 = Vout, CH3 = Iout
(1A/div)
Figure 12: 1.2V to 1.0V Transition at 19V input and 50% load. CH1 = V at R3 input, CH2 = Vout, CH3 = Iout
(1A/div)
CN
12/17/2004
7 of 9
Short Circuit and Recovery:
Figure 13: Short circuit and recovery. Vin = 12V, Iout = 4.5A<->Short. CH1 = Vlx , CH2 = Vout, CH3 = Iin
(0.5A/div) The blank spots in Vlx during full load is due to scope aliasing at 4ms/div time base.
Input Current: (Vin = 12V, Vout = 1.2V)

Vin
I in
Iout
12V
580mA
4.5A
12V
10mA
Shorted
Please note that during short circuit input current is only 10mA, which is 0.12W, therefore the circuit can
withstand the short circuit indefinitely without any heating issue.
Efficiency Vs. Output Current at 12V input:
Vin
Iin
12.03
12.03
12.02
12.01
12.01
12.02
Vo
0.06
0.12
0.23
0.36
0.51
0.58
Io
1.209
1.208
1.205
1.203
1.201
1.200
0.5
1.02
2
3.03
4.04
4.51
Efficiency (Vishay
IHLP2525CZ-4R7)
0.837489609
0.853532835
0.871735513
0.843068276
0.792156863
0.776292386
CN
12/17/2004
8 of 9
Efficiency vs. Output Current

0.95
Efficiency
0.9
Sumida CEP1258R2
Vishay IHLP2525CZ4R7
0.85
0.8
0.75
0.7
0
Output Current (A)
Figure 14: Efficiency Vs. Output Current for two different Inductors.
CN
12/17/2004
9 of 9
MAX8544 12V Input to 1.2V/8.5A Output
Vin (10.8V to 13.2V)

VL
R22
C13
15
ILIM1
R21
19
R19
D4
IN
BST
FSYNC
6
EN
ON
R23
SS
4
COMP
5
FB
R14
VL
R24
R16
R15
C14
N6
C18 C19
C20
Vout=1.2V / 8.5A
L2
LX
14
R17
C17
VL
VL
13
C28
N8
C15
4X
DL
12
PGND
10
R18
C39
8
MODE
CS+
ILIM2
CS-
C13
Sync Out
R13
11
POK
MAX8544EEP
C22
17
16
GND
C21
D3
DH
OFF
18
POK
SYNCO
20
MAX8544: 500KHz, 10.8V-13.2V Input, 1.2V/8.5A Output
CN
Page 1
11/24/04
MAXIM Integrated Products
EXTERNAL COMPONENT LIST FOR: 12V in, 1.2V/8.5A Output

Component
C13
Description
Cap Ceramic X7R: 1uF, 16V
Vendor / Part Number
QTY
TDK: C2012X7R1C105M ( 0805 case size)
C14
Cap Ceramic X7R: 0.1uF, 6.3V
Kemet/C0603C104M9RAC (0603 case size)
C18,19,20
Cap Ceramic X7R 10uF, 16V
TDK: C3225X7R 1C106M (1210 case size)
C21
C22
Cap Ceramic X7R, 560pF, 25V
Kemet/C0402C561M3RAC
C28
Cap Ceramic X7R 10uF, 6.3V
TDK: C2012X5R0J106M (0805 case size)
C17, C39
Cap Ceramic X7R: 0.47uF, 10V
TDK; C1608X5R1A474M (0603 case size)
C15 (4x)
Cap Ceramic X5R: 100uF, 6.3V
TDK: C3525X5R0J107M
C13
D3
Diode Schottky: 30V, 100mA
D4 (optional for Diode, Switching: 100V, 200mA
synchronization)
L2
Inductor: 0.82uH, 6.7 m
Central/CMSSH-3
Central/ CMPD914
1
1
Vishay: IHLP2525CZ-01 series 0.82uH
N6
NMOSFET: 30V, 13.5m
Vishay: Si4390DY
N8
NMOSFET: 30V, 6m
Vishay: Si4842DY
R22
Resistor, 200k, 1%
R21
R19
R17, 18
R23
R14
R16
R15
R13
R24
Resistor, 100k 1%,

Resistor, 53.6k 1%
Resistor, 510, 5%
Resistor, 75k, 5%
Resistor, 8.06k, 1%
Resistor, 15.4k, 1%
Resistor, 66.5k, 1%
Resistor, 4.12k, 1%
Resistor, 100K, 5%
1
1
2
1
1
1
1
1
1
Output Ripple and Step Load Response Waveforms:

1.2V Output:
CN
Page 2
11/24/04
Figure 1: Output ripple at full load.CH1= VLX, CH2 = Vout AC coupled, CH3= Iout at 5A/div
Figure 2: Output ripple at no load.CH1= VLX, CH2 = Vout ac coupleD, CH3= Iout at 5A/div
Figure 3: Step Load Response 50% <->100% load step at 5A/uS, CH2 = Vout AC coupled,
CH3= Iout at 5A/div
CN
Page 3
11/24/04
MAX8544 12V Input to 1.8V/7.2A Output
Vin (10.8V to 13.2V)

VL
R22
C13
9
ILIM1
R21
19
R19
Sync In
15
D4
IN
BST
FSYNC
6
EN
ON
R23
SS
4
COMP
5
FB
R14
VL
R24
R16
R15
C14
N6
C18 C19
C20
L2
Vout=1.8V / 7.2A
LX
14
R17
C17
VL
VL
13
C28
N8
C15
4X
DL
12
PGND
10
R18
CS+
ILIM2
CS-
C13
Sync Out
R13
POK
SYNCO
20
MAX8544: 500KHz, 10.8V-13.2V Input, 1.8V/7.2A Output
CN
Page 1
C39
8
MODE
11
POK
MAX8544EEP
C22
17
16
GND
C21
D3
DH
OFF
18
11/24/04
EXTERNAL COMPONENT LIST FOR: 12V in, 1.8V/7.2A Output

Component
C13
Description
Cap Ceramic X7R: 1uF, 16V
Vendor / Part Number
QTY
TDK: C2012X7R1C105M ( 0805 case size)
C14
C18,19,20
Cap Ceramic X7R 10uF, 16V
TDK: C3225X7R 1C106M (1210 case size)
C21
C22
C28
Cap Ceramic X7R 10uF, 6.3V
TDK: C2012X5R0J106M (0805 case size)
C17, C39
Cap Ceramic X7R: 0.47uF, 10V
TDK; C1608X5R1A474M (0603 case size)
C15 (4x)
Cap Ceramic X5R: 100uF, 6.3V
TDK: C4532X5R0J107M
C13
D3
Diode Schottky: 30V, 100mA
D4 (optional for Diode, Switching: 100V, 200mA
synchronization)
L2
Inductor: 0.82uH, 6.7 m
Central/CMSSH-3
Central/ CMPD914
1
1
Vishay: IHLP2525CZ-01 series 0.82uH
N6
NMOSFET: 30V, 13.5m
Vishay: Si4390DY
N8
NMOSFET: 30V, 6m
Vishay: Si4842DY
R22
Resistor, 200k, 1%
R21
R19
R17, 18
R23
R14
R16
R15
R13
R24
Resistor, 100k 1%,

Resistor, 53.6k 1%
Resistor, 510, 5%
Resistor, 110k, 5%
Resistor, 8.06k, 1%
Resistor, 10.2k, 1%
Resistor, 100k, 1%
Resistor, 10.2k, 1%
Resistor, 100K, 5%
1
1
2
1
1
1
1
1
1
1.8V Output:
Figure 1 : Output ripple at full load.CH1= VLX, CH2 = Vout ac couple, CH3= Iout at 5A/div
CN
Page 2
11/24/04
Figure 2: Output ripple at no load.CH1= VLX, CH2 = Vout ac couple, CH3= Iout at 5A/div
Figure 3 Step Load Response 50% <->100% load step at 5A/uS, CH2 = Vout ac couple,
CH3= Iout at 2A/div
CN
Page 3
11/24/04
MAX8576 10-20V Input to 1.05V at 4.5A

Vin
10V to 20V
C1
R1
FB
SS
OCSET
10
C4
OFF
ON
Q3
R3
VL
GND
DL
C6
R4
C2
R2
MA
X8
57
6
IN
Q1
C3
C5
DH
LX
BST
Vout
1.05V/4.5A
L1
Q2
C7
R5
R6
C8
C9
D1
R8
R7
C10
Figure 1: 10-20Vin, 1.05V/4.5A out (100KHz)
Typical components for Figure 1:

Component
Qty.
Description/Vendor Part Number
C1, C4
C2, C3 (not used)
Capacitor, 10uF, 25V,X5R Ceramic, TDK: C3225X5R1E106M
C5
Capacitor, 1uF, 35V, X7R Ceramic. Taiyo Yuden: GMK316BJ105ML
C6
Capacitor, 4.7uF, 6.3V, X5R Ceramic. Taiyo Yuden: JMK212BJ475MG
C7, C10
C8
Capacitor, 0.1uF, 25V, X7R. Kemet: C0603C104M3RAC
C9
Capacitor, 470uF, 2.5V, 15m, , POS, Sanyo: 2R5TPE470MF
D1
Diode, Switching, 100V, 200mA. Central: CMPD914
Q1,Q2
Transistor, Dual SO-8, NMOSFET: 30V Fairchild: FDS6892:Q1 for HSFET, Q2for LSFET
Q3
Transistor, NMOSFET 2N7002 SOT-23
L1
Inductor, 8.2uH/9.5m/5.8A. Sumida: CEP125-8R2
R1
Resistor, 4.53k, 1%
R2
Resistor, 4.32 k, 1%
R3
Resistor, 1K, 5%
R4
Resistor, 20k, 5%
R5, R7
Resistor, 6.98k, 1%
R6
Resistor, 30, 5%
R8
Resistor, 4.7, 5%
Note: C9 is actually 470uF/4V/ 10 m. I do not have the 470uF/2.5V/15m on hand to use.
Chien Nguyen
1 of 3
10/22/04
Regulation:
Vin
I out
Vout
10V
2.5A
1.040V
20V
2.5A
1.042V
15V
0A
1.056V
15V
4.5A
1.032V
Ripple and Noise:
Figure 1: Ripple and noise at 20Vinput and 0A out. Ch2 = VLX, CH3 3= Vout (AC couple), CH1 = Iout
Figure 2: Ripple and noise at 20Vinput and 4.5A out Ch2 = VLX, CH3 3= Vout (AC couple), CH1 = Iout
Chien Nguyen
2 of 3
10/22/04
Figure 3: Ripple and noise at 10Vinput and 4.5A out. Ch2 = VLX, CH3 3= Vout (AC couple), CH1 = Iout
Step Load Response:
Figure 4: Step Load Response at15Vinput and 0.5A<->4.5A, 5A/uS. Ch2 = VLX, CH3 3= Vout (AC couple),
CH1 = Iout (2A/div)
Chien Nguyen
3 of 3
10/22/04
Network Modem
C4
1uF
10V
24V INPUT
C3
4.7uF
35V
9
R1
15k
C1
22nF
C6
330uF
35V
MV-AX
D1
CMPSH-3
16
VP
15
VL
ILIM
BST
COMP
13
DH
12
C2
560pF
LX
11
DL
VL
C7
10uF
35V
(3x) T1
1:1
N1
Lpri = 3.8uH
FDS6690A
VP4-0047
1,2,3,4
9,10,11,12
14
C5
0.1uF
R3
1.5
R4
1.5
N2
FDS6690A
10
GND
U1
MAX1864T
R2
100k
POK
POK
FB
5,6
B2
FB2
7,8
VL
D3
EC31QS04
R5
220
B3
C13
10nF
7
8
FB3
C14
6.8nF
R6
30.9k
C12
220uF
10V
HC
Q3
FZT
789A
R7
10.0k
C15
1200uF
10V
MV-AX
C11
330uF
10V
TANT
C16
1uF
10V
1864_3f3
RWY
8/21/01
Vin
25.208
24.001
22.791
Iin
1.362
1.429
1.502
Vout
3.3107
3.3109
3.3108
100mVpp
C9
22uF
10V
OUT
1
C8
680uF
6V
OS-CON
D2
EC31
QS04
3.3V@7A
Iout
7.010
7.010
7.009
V3
5.0737
5.0735
5.0731
200mVpp
I3
1.003
1.003
1.003
Eff.
0.824
0.825
0.826
R8
100
0.25W
C10
220pF
50V
5V@1A
BILL OF MATERIALS
23V to 25V Input
3.3V @ 7A, 5V @ 1A Output
08/21/01
1864_3f3
DESIGNATION
C1
C2
C3
QTY
1
1
1
C4,C16
C5
C6
1
1
C7
C8
C9
C10
C11
1
3
C12
C13
C14
C15
1
1
1
D1
D2,D3
N1,N2
Q3
R1
R2
R3,R4
R5
R6
R7
R8
1
1
2
1
1
1
1
DESCRIPTION
Taiyo Yuden GMK316F475MG
Sanyo 35MV330AX
10uF 35V Y5V ceramic capacitor (1210)
Taiyo Yuden GMK325F106MH
Sanyo 10MV220HC
Sanyo 10MV1200AX
Nihon EC31QS04
17m Ohm 30V MOSFET (8-SO)
Fairchild FDS6690A
2A, -25V PNP transistor (SOT-223)
Zetex FZT789A
100 Ohm 5% 0.25W resistor (1210)
T1
U1
1:1 Transformer Lpri=3.8uH

DSL Modem
9V to 16V
INPUT
C2
1uF
10V
13
R1
68k
C4
1000uF
25V
MV-AX
D1
CMPSH-3
20
VP
19
VL
BST
ILIM
DH
COMP
C1
8.2nF
C5
4.7uF
25V
18
17
C3
0.1uF
16
LX
DL
VL
GND
1,2,3
15
3.3V@1.8A
10,11,12
C13
2x 680uF
10V
MV-AX
N1B
14
U1
MAX1865T
R13
100k
OUT
1
POK
FB
B2
R3
100
C6
0.01uF
C7
6 3300pF
Q2
2N3905
R4
10.0k
FB2
B3
C14
2x 10uF
6V
4
R2
1k
R5
10.0k
R6
7 220
8
R7
3k
R8
1k
B4
R9
9 220
10
R10
8.66k
FB4
FB5
12
11
B5
R11
1.0k
2.5V@1.4A
9
C16
2x 3300uF
10V
C8
2x 10uF
6V
C10
4.7uF
16V
Q5
2N
3905
C11
4700pF
C15
330uF
10V
4
Q3
TIP32A
Q4
2N
4402
C9
4700pF
FB3
RWY
5/11/01
T1
1:1:2
Lpri = 3.8uH
VP4-0047
N1A
1/2
FDS
6912A
C12
4.7uF
16V
C17
4.7uF C18
16V 330uF
10V
MV-AX
D3
EC10QS06
C19
4.7uF
16V
C20
47uF
25V
D2
EC10QS03L
5
6,8
7
5V@300mA
R12
390
0.5W
C21
100pF
50V
12V@50mA
BILL OF MATERIALS
9V to 16V Input
3.3V @ 1.8A, 2.5V @ 1.4A, 5V @ 300mA, 12V @ 50mA Output
5/11/01
1865T_3f
DESIGNATION
C1
C2
QTY
1
1
C3
C4
1
1
C5
C6
C7
C8,C14
1
1
4
C9,C11
C10,C12,C17,C19
2
4
C13
C15,C18
C16
C20
2
1
C21
D1
1
1
D2
D3
N1
Q2,Q5
Q3
Q4
R1
R2
1
1
DESCRIPTION
Sanyo 25MV1000AX
Sanyo 10MV680AX
Sanyo 10MV330AX
Sanyo 25MV47AX
Nihon EC10QS03L
Nihon EC10QS06
Fairchild FDS6912A
200mA 40V PNP Transistor (TO-92)
2N3905
3A 60V PNP Transistor (TO-220)
TIP32A
2N4402
R3
R4,R5
R6,R9
R7
R8
R10
R11
R12
R13
T1
1
2
2
1
1
1
1
1
1
1
U1

390 Ohm 5% 0.5W resistor (axial)
1:1:2 transformer Lpri = 3.8uH
MAX1865TEEP (20-QSOP)
DSL Modem
9V to 16V
INPUT
C2
1uF
10V
13
R1
68k
C4
1000uF
25V
MV-AX
D1
CMPSH-3
20
VP
19
VL
BST
ILIM
DH
COMP
C1
8.2nF
C5
4.7uF
25V
18
17
C3
0.1uF
16
LX
DL
VL
GND
1,2,3
15
3.3V@1.8A
10,11,12
C13
2x 680uF
10V
MV-AX
N1B
14
U1
MAX1865T
R13
100k
OUT
1
POK
FB
B2
R3
100
C6
0.01uF
C7
6 3300pF
Q2
2N3905
R4
10.0k
FB2
B3
C14
2x 10uF
6V
4
R2
1k
R5
10.0k
R6
7 220
8
R7
3k
R8
1k
B4
R9
9 220
10
R10
8.66k
FB4
FB5
12
11
B5
R11
1.0k
2.5V@1.4A
9
C16
2x 3300uF
10V
C8
2x 10uF
6V
C10
4.7uF
16V
Q5
2N
3905
C11
4700pF
C15
330uF
10V
4
Q3
TIP32A
Q4
2N
4402
C9
4700pF
FB3
RWY
5/11/01
T1
1:1:2
Lpri = 3.8uH
VP4-0047
N1A
1/2
FDS
6912A
C12
4.7uF
16V
C17
4.7uF C18
16V 330uF
10V
MV-AX
D3
EC10QS06
C19
4.7uF
16V
C20
47uF
25V
D2
EC10QS03L
5
6,8
7
5V@300mA
R12
390
0.5W
C21
100pF
50V
12V@50mA
BILL OF MATERIALS
9V to 16V Input
3.3V @ 1.8A, 2.5V @ 1.4A, 5V @ 300mA, 12V @ 50mA Output
5/11/01
1865T_3f
DESIGNATION
C1
C2
QTY
1
1
C3
C4
1
1
C5
C6
C7
C8,C14
1
1
4
C9,C11
C10,C12,C17,C19
2
4
C13
C15,C18
C16
C20
2
1
C21
D1
1
1
D2
D3
N1
Q2,Q5
Q3
Q4
R1
R2
1
1
DESCRIPTION
Sanyo 25MV1000AX
Sanyo 10MV680AX
Sanyo 10MV330AX
Sanyo 25MV47AX
Nihon EC10QS03L
Nihon EC10QS06
Fairchild FDS6912A
2N3905
TIP32A
2N4402
R3
R4,R5
R6,R9
R7
R8
R10
R11
R12
R13
T1
1
2
2
1
1
1
1
1
1
1
U1

390 Ohm 5% 0.5W resistor (axial)
CPE modem
24V
INPUT
C2
1uF
10V
13
R1
200k
20
VP
C4
220uF
35V
CA
D1
CMPSH-3
19
VL
BST
ILIM
COMP
C1
8.2nF
DH
18
17
16
LX
C3
0.1uF
T1
1:1
Lpri = 27.2uH
VP3-0084
N1A
1/2
NDS
9956A
R2
22
1,2
DL
VL
U1
MAX1865T
R10
100k
GND
OUT
1
POK
FB
B2
15
14
N1B
3,4, 9,10
11,12
C5
220uF
10V
CA
R3
22
3
4
R4
220
C6
4700pF
Q2
TIP
30B
5
R5
30.1k
C8
220uF
10V
CA
5V@1A
C7
220uF
10V
CA
FB2
R6
10.0k
B3
7V@500mA
7
8
FB3
B4
VL
9
10
FB4
VL
R7
46.4k
FB5
11
B5
RWY
3/2/01
C10
2.2uF
10V
12
R8
46.4k
Q4
2N3904
C9
R9
4700pFC11
220
2.2uF
10V
-5V@100mA
D2
EP05Q03L
6
C12
220uF
10V
CA
7,5
BILL OF MATERIALS
23V to 25V Input
7V @ 500mA, 5V @ 1A, -5V @ 100mA Output
03/15/01
1865t_7b
DESIGNATION
C1
C2
QTY
1
1
C3
C4
1
1
C5,C7,C8,C12
C6,C9
C10,C11
2
2
D2
D2
N1
Q2
Q3
R1
R2,R3
R4,R9,R10
R5,R8
R6,R11
R7
R12
T1
1
2
3
2
3
1
1
1
U1
DESCRIPTION
Sanyo 35MV220CA
Sanyo 10MV220CA
Nihon EC21QS06
Fairchild Semi NDS6930A
1A, -80V PNP transistor (TO-220)
TIP30B
200mA, 40V NPN transistor (TO-92)
2N3904
1:1Transformer Lpri=15.2uH
CPE Modem
9V to 16V
INPUT
C2
1uF
10V
13
R1
68k
D1
CMPSH-3
20
VP
19
VL
BST
ILIM
COMP
C1
8.2nF
DH
GND
U1
MAX1865T
R17
100k
OUT
1
POK
FB
C3
0.1uF
17
16
DL
C5
4.7uF
25V
18
LX
VL
C4
1000uF
25V
MV-AX
15
T1
1:1:2
Lpri = 3.8uH
VP4-0047
N1A
1/2
FDS
6912A
R2
10
R3
10
1,2,3
C16
2x 680uF
10V
MV-AX
N1B
14
3
C17
2x 10uF
6V
4
R4
220
B2
3.3V@1.5A
10,11,12
C6
15nF
C7
6 10nF
C18
330uF
10V
4
Q2
FZT749
R5
46.4k
FB2
R6
10.0k
1.8V@1A
9
C19
330uF
10V
C8
2x 10uF
6V
D2
EC10QS06
5
B3
R7
7 220
8
FB3
C10
4.7nF
C9
10nF
R8
30.9k
R9
10.0k
B4
R10
9 220
10
FB4
FB5
1865t_3j
RWY
6/28/01
12
C28
1.8nF
Q4
FZT
749
C13
12nF
R11
88.7k
R14
10.0k
Q5
R15
11MPSA56 10.0k
B5
R16
220
C20 C21
150uF330uF
10V 10V
MV-AX
C12 D3
C11
10uF MBRS
330uF
10V 1100
10V
6,8
Q3
FZT
749
R12
10.0k
C27
3.3nF
C14
150uF
25V
MV-AX
C22
47uF
25V
C23
150uF
25V
MV-AX
5V@500mA
R13
390
0.5W
D4
EC10QS06
C25
1uF
50V
C24
200pF
50V
12V@400mA
C15
4.7uF
25V
Q6
KSH
29C
C26
4.7uF
25V
-12V@100mA
BILL OF MATERIALS
9V to 16V Input
12V @ 150mA, 5V @ 500mA, 3.3V @ 1.5A, 1.8V @ 1A, -12V @ 20mA Output
6/22/01
1865t_3h
BOM REV: PRELIM (P1)
BOARD REV: P1
DESIGNATION
QTY DESCRIPTION
C1
1
C2
1
C3
1
C4
1
Sanyo 35MV1000AX
C5
1
C6
1
C7,C9
2
C8,C16
4
C10
1
C11,C17,C18,C20
4
Sanyo 10MV330AX
C12
1
C13,C26
2
C14,C21,C25
3
C15
2
Sanyo 10MV680AX
C19
1
Sanyo 10MV150SAX
C22
1
Sanyo 25MV47AX
C23
1
C24
1
1uF 50Vceramic capacitor (radial)
D1
1
D2
1
Nihon EC10QS06
D3
1
On Semiconductor MURS1100
N1
1
Fairchild FDS6912A
Q2,Q3
2
1A 40V PNP Transistor (SOT-223)
Zetex FZT749
Q4
Q5
Q6
R1
R2,R3
R4,R7,R10,R16
R5
R6,R9,R14,R15
R8
R11
R12
R13
T1
1
1
4
1
4
1
1
1
1
1
U1

2N4401
MPSA56
500mA 80V NPN Transistor (TO-92)
MPSA06
WLL Terminal
C4
1uF
10V
24V
INPUT
C3
4.7uF
35V
13
R1
130k
C1
22nF
C6
220uF
35V
CA
D1
CMPSH-3
20
VP
ILIM
19
VL
BST
COMP
DH
17
16
C2
220pF
C7
4.7uF
35V T1
1:1:2
Lpri = 22.8uH
VP2-0116
18
LX
C5
0.1uF
N1A
1/2
NDS
6930A
R3
4.7
11,12
DL
VL
GND
U1
MAX1865T
R2
100k
OUT
1
15
14
B2
FB2
B3
FB3
B4
FB4
C8
1000uF
16V
MV-AX
(2x)
R4
4.7
3
R5
3.16k
4,5
5
6
7
8
C9
22uF
10V
N1B
POK
FB
5.15V@800mA
8,9
R6
1.00k
VL
R8
220
D2
EC21QS06
C13
0.1uF
Q2
KSH30
R9
46.4k
10
C15
220uF
16V
HC
R10
10.0k
C14
3.3nF
R11
18k
C12
220uF
16V
HC
R7
330
0.25W
1,2
C11
470uF
16V
CA
C10
100pF
100V
7V@400mA
C16
1uF
10V
VL
R12
100k
P3
IRLML
5103
7VOFF
D3
CMPD
914
R13
4.75k
FB5
11
B5
Iin
0.403
0.422
0.442
R14
4.64k
Q4
2N3904
C18
R15
150pF C19
220
4.7uF
10V
1865t_7d
RWY
8/20/01
Vin
25.208
24.003
22.796
C17
4.7uF
10V
12
Vout
5.1268
5.1266
5.1265
50mVpp
Iout
0.8009
0.8009
0.8009
V4
6.883
6.882
6.882
10mVpp
I4
0.401
0.401
0.401
-5V@80mA
D4
MBRS1100
6 3,10
C20
220uF
16V
HC
V5
-5.0021
-5.0020
-5.0024
50mVpp
R16
100
0.25W
I5
0.0802
0.0800
0.0801
C21
440pF
100V
Eff.
0.715
0.717
0.721
BILL OF MATERIALS
23V to 25V Input
7V @ 400mA, 5.15V @ 800mA, -5V @ 80mA Output
08/21/01
1865t_7d
DESIGNATION
C1
C2
C3,C7
QTY
1
1
2
C4,C16
C5,C13
C6
1
1
C8,C11
C9
C10
C12,C15,C20
1
3
C14
C17,C19
1
2
C18
C21
D1
1
2
1
D2
D3
D4
N1
P3
Q2
Q4
R1
R2,R12
1
2
DESCRIPTION
Sanyo 35MV220CA
Sanyo 16MV470CA
Sanyo 16MV220HC
Nihon EC21QS04
10mA 100V signal diode (SOT-23)
Central Semi CMPD914
Central Semi EC10QS06
Fairchild Semi FDS6930A
1 Ohm 30V PFET (SOT-23)
IRLML5103
1A, -40V PNP transistor (D-PAK)
Fairchild KSH30
200mA, 40V PNP transistor (TO-92)
2N3906
R3,R4
R5
R6
R7
R8,R15
R9
R10
R11
R13
R14
R16
T1
2
1
1
1
2
1
1
1
1
1
1
1
U1

330 Ohm 5% 0.25W resistor (1210)
100 Ohm 5% 0.25W resistor (1210)
1:1:2 Transformer Lpri=22.8uH
ADSL Modem
8V to 18V
INPUT
C3
1uF
C5
330uF
35V
MV-AX
(3x)
D1
CMPSH-3
13
R1
68k
C1
15nF
20
V+
19
VL
ILIM
BST
COMP
DH
C2
100pF
17
LX 16
DL
VL
GND
C6
4.7uF
35V
18
15
C4
0.1uF
N1A
1/2
FDS6930A
R3
4.7
R4
4.7
1,2
N1B
1/2
FDS6930A
14
OUT1
1
POK
FB1
B2
3.3V@1A
12,11
C21
22uF
10V
C20
680uF
6V
OS-CON
3
4
C9
FB2 6 15nF
R5
220
Q2
FZT789A
C8
1.2nF
R6
10.5k
B3
R8
7 220
FB3 8
C12
1nF
Q3
2N3905
R9
3.09k
B4
FB4 10
C15
2.2nF
Q4
2N3905
R12
8.87k
FB5
R15
5.11k
R16
220
Iout
1.005
1.005
1.005
1.005
1.005
V2
2.530
2.530
2.530
2.530
2.530
I2
1.002
1.002
1.002
1.002
1.002
5V@100mA
8 4 5
C14
4.7uF
25V
R17
330
0.25W
C23
100uF
25V
MV-AX
C24
100pF
50V
12V@100mA
-12V@100mA
C18
2.2nF
1865t_3l
RWY
9/6/01
D3
MBRS1100
R14
5.11k
12
B5 11
Vout
3.322
3.321
3.321
3.320
3.320
10
C22
390uF
10V
MV-AX
C11
3.3uF
10V
C16
4.7uF
25V
R13
1.00k
2.5V@1A
D2
EP05Q04
C13
3.3uF
10V
R10
1.00k
R11
9 220
C7
330uF
10V
HC
C10
330uF
10V
R7
10.0k
Iin
1.462
1.011
0.845
0.739
0.667
MAX1865T
R2
100k
Vin
8.036
12.00
15.00
18.00
21.00
L1
10uH
1:1:4:4
V3
5.053
5.052
5.052
5.053
5.055
Q5
2N3903
C19
4.7uF
25V
I3
0.100
0.100
0.100
0.100
0.100
C17
4.7uF
D4
25V MBRS1100
C25
100uF
25V
MV-AX
V4
12.17
12.17
12.18
12.18
12.18
I4
0.101
0.101
0.101
0.101
0.101
6 4 7
R18
330
0.25W
V5
-12.07
-12.17
-12.17
-12.18
-12.18
C26
100pF
50V
I5
-0.102
-0.102
-0.102
-0.102
-0.102
Eff.
0.752
0.729
0.698
0.665
0.632
Transformer Design
EFD15 core AL=84nH/T2 (Coiltronics SG3-0084)
Layer 1: (Pin 3-10) 11 turns bifilar #28AWG
Layer 2: (Pin 5-8) 44 turns #34AWG
BILL OF MATERIALS
8V to 18V Input
3.3V @ 1A, 2.5V @ 1A, 5V @ 100mA, 12V @ 100mA, -12V@ 100mA Output
1865t_3l
9/6/01 RWY
DESIGNATION
QTY DESCRIPTION
C1,C9
2
C2
1
C3
1
C4
1
C5
3
Sanyo 35MV330AX
C6
1
C7,C10
2
Sanyo 10MV330HC
C8
1
C11,C13
2
C12
1
C14,C16,C17,C19
4
C15,C18
2
C20
1
C21
1
C22
1
Sanyo 10MV390AX
C23,C25
2
Sanyo 25MV100AX
C24,C26
2
D1
1
100mA Schottky diode
D2
1
Nihon EC05Q04
D3,D4
2
N1
Q2
Q3,Q4
Q5
R1
R2
R3,R4
R5,R8,R11,R16
R6
R7,R14,R15
R9
R10,R13
R12
R17,R18
T1
1
1
2
4
1
3
1
2
1
2
1
U1
Fairchild Semi FDS6930A
2A, -25V PNP transistor (SOT-223)
Zetex FZT789A
200mA, -40V PNP transistor (TO-92)
2N3905
200mA 40V NPN transistor (TO-92)
2N3903
330 Ohm 5% 0.25W resistor (1210)
1:1:4:4 Transformer Lpri=10uH (SG3)
ICE Components ICA-????
DSL Modem
12V INPUT
C2
1uF
10V
9
R1
68k
16
VP
15
VL
BST
ILIM
COMP
DH
C1
8.2nF
GND
11
C3
0.1uF
OUT
1
POK
FB
B2
FB2
R3
10
R4
10
1,2
N1
1/2
FDS
6930A
10
3.3V@1.5A
3,4, 9,10
11,12
C14
1uF
10V
C13
820uF
10V
MV-AX
3
4
R5
220
5
6
5
6,8
Q2
TIP
30B
C5
1500pF
R6
1.05k
R7
1.00k
B3
T1
Lpri =
15.2uH
VP3-0047
N1
1/2
FDS
6930A
U1
MAX1864T
R2
100k
POK
13
12
DL
C4b
4.7uF
25V
14
LX
VL
C4
390uF
25V
MV-AX
D1
CMPSH-3
R8
220
7
8
FB3
C6
3300pF
R9
3.09k
R10
1.00k
C8
10uF
10V
Q3
TIP
30B
C11
10uF
10V
C7
10uF
10V
C9
1uF
10V
C10
10uF
10V
2.5V@130mA
D2
EC10
QS04
C12
470uF
10V
MV-AX
R11
36
0.5W
C15
1000pF
50V
5V@350mA
C12
1uF
10V
1864_3d3
RWY
9/3/01
Vin
8.908
11.93
14.94
Iin
0.955
0.719
0.578
Vout
3.321
3.320
3.321
Iout
1.502
1.502
1.502
Vout2
2.521
2.521
2.521
Iout2
0.130
0.130
0.130
Vout3
5.015
5.013
5.015
Iout3
0.350
0.350
0.350
Eff.
0.831
0.824
0.819
BILL OF MATERIALS
12V Input
3.3V @ 1.5A, 2.5V @ 130mA, 5V @ 350mA Output
1864_3d3
6/26/01
DESIGNATION
QTY DESCRIPTION
C1
1
C2,C9,C12,C14
4
C3
1
C4
1
Sanyo 25MV390AX
C4b
1
C5
1
C6
1
C7,C8,C10,C11
4
C13
1
Sanyo 10MV820AX
C15
1
1nF 50V ceramic capacitor (radial)
D1
1
D2
1
Nihon EC10QS04
N1
1
Fairchild FDS6930A
Q2,Q3
2
TIP30B
R1
1
R2
1
R3,R4
2
R5,R8
2
R6
1
R7,R10
2
R9
1
R11
1
T1
1
1:1 Transformer Lpri = 15.2uH
U1
1
Telematics in car
1
C4
1uF
10V
5V to 28V
INPUT
C3
4.7uF
35V
9
R1
150k
C1
22nF
16
VP
15
VL
ILIM
BST
COMP
DH
12
C2
1.5nF
LX
DL
GND
U1
MAX1864T
VL
OUT
R2
100k
1
FB
POK
B2
FB2
11
SHDN
FB
C5
0.1uF
N1
1/2
NDS
9956A
R3
10
R4
10
10
R13
100k
L1
DO3316P-223
3.3V@1A
C16
1000uF
6V
HC
5
6
R5
220
C8
4.7nF
Q2
TIP
30B
C10
22nF
R6
54.9k
R8
220
8V@50mA
C13
47uF
10V
HC
C14
10uF
50V
HC
Q3
TIP
30B
C11
15nF
R9
30.9k
C9
4.7nF
C12
10uF
50V
HC
R10
10.0k
D3
1N4148
8V
FAULT
VL
R14
18k
R16
200k
1
2
3
R15
15k
D4
1N4148
5V@50mA
C15
47uF
10V
HC
P4
NDS
0605
SHDN
1864_3c3
RWY
7/23/01
R12
100k
FB3
D2
1N4148
C18
47uF
10V
HC
R11
100k
N1
1/2
NDS
9956A
VL
2.5V@10mA
GND
2
R7
10.0k
B3
OUT
C7
4.7uF
35V
14
13
U2
MAX1616
C17
0.1uF
C6
470uF
50V
HC
(2x)
D1
CMPSH-3
IN
4
R17
100k
OUTA
VCC
REF
N.C.
INAINA+
5 VEE
U3
MAX9053
OUTB
INBINB+
10
C19
0.1uF
R18
82k
8
7
6
5V
FAULT
R19
100k
BILL OF MATERIALS
5V to 28V Input
3.3V @ 1A, 8V @ 50mA, 5V @ 50mA, 2.5V @ 10mA Output
1864_3c3
7/23/01
DESIGNATION
QTY DESCRIPTION
C1,C10
2
C2
1
C3,C7
2
C4
1
C5,C17,C19
3
0.1uF 50Vceramic capacitor (0805)
C6
2
Sanyo 50MV470HC
C8,C9
2
C11
1
C2, C14
2
Sanyo 50MV10HC
C13, C15,C18
3
Sanyo 10MV47HC
C16
1
Sanyo 6MV1000HC
D1
1
D2,D3,D4
3
10mA 100V silicon diode (DO41)
1N4148
L1
1
22uH 1.5A Power Inductor
N1
1
Fairchild FDS9956A
P4
1
P-channel MOSFET (SOT-23)
Fairchild NDS0605
Q2,Q3
2
TIP30B
R1
1
R2,R13,R17,R19
4
R3,R4
2
R5,R8
2
R6
1
R7,R10
2
R9
1
R7,R10
2
R11,R12
2
R14
1
R15
1
R16
1
R18
U1
U2
U3
1
1
1
1

MAX1616EUK (5-SOT23)
MAX9053BEUB (10-uMAX)
USB Modem
4.5V to 5.5V
INPUT
C2
1uF
10V
9
R1
680k
D1
CMPSH-3
16
IN
15
VL
ILIM
BST
COMP
DH
14
13
C4
10uF
10V
C3
0.1uF
R3
4.7
N1A
1/2
IRF
7301
12
C1
5.6nF
LX
DL
VL
GND
U1
MAX1864T
R2
100k
OUT
POK
FB
3.1V@
400mA
1,2
R4
4.7
11
T1
1:1:3
Lpri=22.8uH
9,10
C10
470uF
6V
MV-AX
N1B
10
3
R5
15.0k
C5
4 5.6nF
D2
EP05
Q04
R6
10.0k
B2
6
FB2
R11
100
C8
0.22uF
8
FB3
VL
R16
100k
5V
12
Q2
2N
3905
R9
30.1k
R10
10.0k
R12
220
R13
86.6k
R14
10.0k
R17
100k
Q4
CMPT
3904
R8
220
R7
100
C6
0.22uF
B3
C11
470uF
6V
MV-AX
C13
47uF
10V
HC
C7
47uF
10V
Q3
2N
3905
R15
1k
0.25W
C12
220uF
10V
MV-AX
5.0V@
100mA
C14
47pF
C16
47uF
25V
HC
6 5,7
C15
D3
100uF
EP05
25V
Q04
MV-AX
C9
47uF
25V
HC
R18
10k
Q5
CMPT
3904
R19
1864_3v1
10k
RWY
11/14/01
Notes:
1. T1 wound on EF12.6 core with AL=57nH/T*T, 10-pin surface-mount bobbin.
12V@
30mA
BILL OF MATERIALS
4.5V to 5.5V Input
12V @ 30mA, 5.0V @ 0.1A, 3.1V @ 0.4A Output
11/08/01
1864_3v1
DESIGNATION
C1,C5
C2
QTY
2
1
C3
C4
1
1
C6,C8
C7,C13
2
2
C9,C16
C10,C11
C12
C14
C15
1
1
D1
D2,D3
N1
Q2,Q3
Q4,Q5
R1
R2,R16,R17
R3,R4
R5
R6,R10,R14
R7,R11
R8,R12
R9
R13
R15
R18,R19
1
3
2
1
3
2
2
1
1
1
2
DESCRIPTION
Sanyo 10MV47HC
Sanyo 25MV47HC
Sanyo 6MV470AX
Sanyo 10MV220AX
Sanyo 25MV100AX
Nihon EP05Q04
200mA -40V PNP Transistor (TO-92)
2N3905
200mA 40V NPN Transistor (SOT-23)
Central Semi CMPT3904
1k Ohm 0.25W 5% resistor (1210)
T1
U1
Vin
5.500
4.999
4.4974
Iin
0.456
0.498
0.552
Vout
3.0802
3.0786
3.0776
100mVpp

Coiltronics SG7-0057 core (EF12.6)
Iout
0.400
0.400
0.400
V2
4.9233
4.9187
4.9038
25mVpp
I2
0.10005
0.10005
0.10004
V3
11.940
11.932
11.922
25mVpp
I3
0.03025
0.03025
0.03025
Eff.
0.832
0.837
0.839
Cable/DSL Modem Power Supply:

5.85V to 7.15V Input DC-DC Step-Down to 1.24V at 3A
3.3V Input Linearly Regulated to 2.5Vat 1.4A, 1.8V at 0.17A and 1.5V at 0.14A
20
18
IN
BST
C3
2.2
F
DH
LX
19
17
13
ILIM
Q1
FDS6930A
R1
4.7
16
C4
0.1
F
15
R2
4.7
VL
C5
1
F
DL
4
C2
10
F
OUT
1
GND
POK
TO LOGIC
L1
5.6uH
VOUT1
1.236V @
C6
680
F 3A
Rs
3
R14
2k
Cs
4700pF
FB
R3
100k
5.85V to 7.15V
INPUT
C1
470
F
D1
CMPSH-3
3
3V to 3.6V
INPUT
14
C7
0.01
F
R4
180k
COMP
C9
1500pF
C8
1
F
C10
100pF
5
B2
R5
620
R6
1.15k
Q2
PZT4403
6
FB2
C11
10
F
R7
2.49k
VOUT2
1.8V @ 170mA
C12
0.01
F
MAX1965
B3
C13
1
F
R8
620
R9
523
Q3
PZT4403
8
FB3
C14
10
F
VOUT3
1.5V @ 140mA
R10
2.49k
C15
0.01
F
C16
10
F
11
B5
9
B4
R11
220
R12
2.55k
12
FB5
FB4
10
Q4
FTZ749
C17
10
F
R13
2.49k
C18
10
F
VOUT4
2.5V @ 1.1A
POWER GROUND
ANALOG GROUND
7/12/2004 CN
1 of 4
BOM with Estimated Cost based on 500K+ quantity

Component
QTY.
Description
R1,R2
2 Resistor 4.7, 5% 0603
R3
1 Resistor 100k, 5% 0603
R4
1 Resistor 180k, 5% 0603
R5,R8
2 Resistor 620, 5% 0603
R6
1 Resistor 1.15k, 1% 0603
R7,R10,R13
3 Resistor 2.49k, 1% 0603
R9
1 Resistor 523, 1% 0603
R12
1 Resistor 2.55k, 1% 0603
R13
1 Resistor 220, 5% 0603
R14
1 Resistor 2k, 5% 0603
Rs (optional)
1 Resistor 3, 5% 0805
C1
1 Capacitor 470uF/10V Sanyo: 10MV470AX (8x11.5)
C2,C11, C14,C16,
6 Capacitor 10uF/10V, X7R Ceramic, 1206
C17,C18
C3
1 Capacitor 2.2uF/10V, X5R Ceramic, 0603
C4
C5,C8,C13
3 Capacitor 1uF/10V, X5r Ceramic 0603
C6
1 Capacitor 680uF/16V Rubycon: 16MBZ680M 8x 16
C7, C12,C15
C9
1 Capacitor 1500pF/25V, X7R Ceramic, 0603
C10
1 Capacitor 100pF/25V, COG Ceramic, 0603
Cs (optional)
D1
Q1
Q2,Q3
Q4
1
1
1
2
1
Capacitor 1000pF/25V, X7R Ceramic, 0603

Diode Schottky 100mA/30V Central CMPSH-3
MOSFET 30V/ 0.044 Dual SO-8 Fairchild FSD6930A
Transistor PNP SOT223 Philip PZT4403
Transistor PNP SOT223 Zetex or Fairchild FTZ749
L1
MAX1965
1 Inductor 15uH, 3.1A Sumida CDRH104R-150

1 IC, PWM + LDO Controllers
Cost
Ext. Cost
0.001
0.002
0.001
0.001
0.001
0.001
0.001
0.002
0.0025
0.0025
0.0025
0.0075
0.0025
0.0025
0.0025
0.0025
0.001
0.001
0.001
0.001
0.002
0.002
0.05
0.05
0.05
0.025
0.02
0.025
0.09
0.015
0.015
0.03
0.015
0.035
0.25
0.07
0.15
0.1
0.95
Total
Test results:
Output
Vout1
Vout2
Vout3
Vout4
At No Load
1.240V
1.831V
1.515V
2.519V
At Full Load
1.239V
1.816V
1.507V
2.490V
Line regulation is negligible.
7/12/2004 CN
2 of 4
0.3
0.025
0.02
0.075
0.09
0.045
0.015
0.03
0
0.015
0.035
0.25
0.14
0.15
0
0.1
0.95
2.315
Output Ripple and Noise (measured with all outputs at full load):
1.24V Buck Output Ripple
1.8V Output Ripple
7/12/2004 CN
3 of 4
1.5V LDO Output Ripple
2.5V LDO Output Ripple
7/12/2004 CN
4 of 4
10.8V to 13.2V
VIN
VL
D1
C2
10uF
25V
X5R
(2x)
1.25V
@8A
VOUT2
N2
IRF7821
R1
0.02
0.5W
L2
0.6uH
N4
IRF7832
R21
1.5
0.5W
C11
100uF
6V
X5R
(6x)
R2
1.21k
C5
0.1uF
C8
10pF
C39
2.2nF
D2
1 BST2
BST1 28
2 DH2
DH1 27
LX2
U1
MAX8538
LX1
26
4 ILIM2
ILIM1 25
6 DL2
DL1 23
PGND
C6
0.1uF
C9
10pF
R6
100k
R5
100k
R19
100k
R20
100k
7 POK2
EN1
R9
28.7k
(700kHz) 10
FREQ
EN2
EN1
N3
IRF7832
V+
21
AVL 20
R12
3.9k
R10
5.76k
8538_1e2
RWY
12/15/04
Vin
12.01
10.78
12.01
13.22
20MHz BW
Current limit
Iin
0.0973
2.30
2.09
1.93
R11
43k
C17
2.2nF
C18
10pF
R23
10.0k
C23
33nF
Vout1
1.259
1.256
1.257
1.257
<10mVpp
11 COMP2
COMP1 18
12 FB2
FB1 17
13 SS2
SS1 16
14 N.C.
Iout1
0
8
8
8
~9.3A
C40
2.2nF
C13
4.7uF
C12
100uF
6V
X5R
(6x)
GND 15
R7
2.2
C14
1uF
C21 R14
2.2nF 43k
C20
10pF
C24
33nF
Vout2
1.262
1.259
1.260
1.260
<10mVpp
1.25V
@8A
VOUT1
R22
1.5
0.5W
VL
GND 19
C19
220pF
L1
0.6uH
VL 22
8 EN2
POK1
POK2
R4
0.02
0.5W
R3
1.21k
R32
10
24
5 POK1
VL
C4
10uF
25V
X5R
(2x)
N1
IRF7821
R8
4.7
C15
1uF
R13
3.9k
C22
220pF
R15
5.76k
R16
10.0k
Iout2
0
8
8
8
~9.1A
Efficiency
0.811
0.8032
0.789
BILL OF MATERIALS
1.8V @ 8A, 1.8V @ 8A Output
12/17/04
8538_1e2
DESIGNATION
C2,C4
QTY
4
C5,C6
C8,C9,C18,C20
C11,C12
2
4
12
C13
C14
C15
C17,C21
C19,C22
C23,C24
C39,C40
D1,D2
2
2
2
2
2
L1,L2
N1,N3
N6,N8
R2,R3
R5,R6,R19,R20
R7
R8
R9
R10,R15
R11,R14
R12,R13
R13
R16,R23
R21,R22
R22
R27,R280,R31, R32
U1
2
4
1
1
1
2
2
2
1
2
2
1
4
1
DESCRIPTION
Taiyo Yuden JMK432BJ107MU
100mA 30V Schottky diode (SOD-323)
Central Semi CMDSH-3
0.6uH 10A Inductor
Toko FDV0630-0R6
International Rectifier IRD7832
1.5 Ohm 0.5W 5% resistor (2012)
Short
MAX8538EEI (28-QSOP)
7V to 20V Input
1.8V @ 3A, 3.3V @ 2A Output
9/23/04
7V to 20V
VIN
C7
0.1uF
VOUT2
1.8V
@3A
R2
1k
C2
22uF
6V
X5R
(2x)
L2
1.5uH
C11
22uF
6V
X5R
(2x)
N1A
FDS6912A
N1B
FDS6912A
R21
3.3
C5
0.1uF
R29
10
R6
100k
2 DH2
DH1 27
3 LX2
U1
MAX8538
DL2
7
8
POK2
DL1
R9
16.5k
(1.2MHz) 10
VL
FREQ
EN
GND
C19
100pF
R12
1.8k
R11
33k
C18
5pF
R10
12.7k
8538_1d8
RWY
9/23/04
Vin
12.01
6.97
12.00
20.15
20MHz BW
Current limit
C17
1nF
11
12
13
R23
10.0k
C23
33nF
Iin
0.060
2.03
1.21
0.78
Vout1
3.318
3.319
3.321
3.324
<80mVpp
COMP2
COMP1
FB2
FB1
SS2
SS1
14 N.C.
Iout1
0
2.00
2.00
2.00
C40
1nF
R32
10
22
20
18
17
R7
2.2
C13
4.7uF
C14
1uF
19
C21 R14
1.5nF 33k
C20
5pF
C15
1uF
R13
1.5k
C22
100pF
R15
31.6k
16
GND 15
C24
33nF
Vout2
1.814
1.810
1.811
1.813
20mVpp
~5A
QTY
6
C4
C5,C6,C7,C10
C13
4
1
C12
22uF
6V
X5R
(2x)
R8
4.7
R16
10.0k
Iout2
0
3
3
3
~4A
BILL OF MATERIALS
7V to 20V Input
1.8V @ 3A, 3.3V @ 2A Output
8538_1d8
DESIGNATION
C2,C11,C12
VOUT1
3.3V
@2A
L1
1.5uH
R22
2.2
1W
23
V+ 21
AVL
C4
10uF
25V
X5R
(2x)
N2A
FDS6984S
N2B
FDS6984S
ILIM1 25
EN2
9 EN1
POK2
R30
10
5 POK1
R19
100k
POK1
LX1 26
R3
2k
C6
0.1uF
PGND 24
VL
R5
100k
BST1 28
4 ILIM2
R31
10
C10
0.1uF
D2
1 BST2
C39
680pF
VL
D1
DESCRIPTION
Efficiency
0.853
0.832
0.769
C14,C15
C17,C40
C18,C20
C19,C22
C21
C23,C24
C39
D1,D2
2
2
1
1
2
1
2
L1,L2
N1
N2
R2
R3
R5,R6,R19
R7
R8
R9
R10
R11,R14
R12
R13
R15
R16,R23
R21
R22
R29,R30,R31,R32
U1
1
1
3
1
1
1
1
2
1
1
1
2
1
1
4
1

Taiyo Yuden TMK107C105MA
Central Semi CMDSH-3
1.5uH 5.8A Inductor
Sumida CDRH103R-1R5
Fairchild FDS6912A
Fairchild FDS6984S
1.2MHz, Dual Output, All Ceramic Step-Down Converter for xDSL

Modems
10.8V to 13.2V
VIN
D1A,B
CMPSH-3A
C8
0.22uF
25V
C2
4.7uF
25V
X5R
16
L1
6.2uH
CDRH
5D28
1.8V @
0.8A
VOUT1
C3
0.1uF
R1
3.3
R2
3.3
N1A,B
NDS
C1
9956A
100uF
6V
R3
X5R 24.3k
C4
1nF
19
VL
BST1
DH1
17
11
LX2
DL1
DL2
23
22
20
R9
3.3
R10
3.3
FB1
FB2
N2A,B
NDS
9956A
2
R12
10.5k
12
COMP1
COMP2
R13
1k
10 ILIM1
24
VL
13
RESET
C15
4.7nF
ILIM2 3
EN
SYNC
RST
CKO
REF
OSC
C7
0.1uF
C13
1nF
R14
10k
C14
27pF
R7
33k
3.3V @
1.1A
VOUT2
C12
100uF
6V
R11
24.3k X5R
C6
27pF
R8
33k
L2
6.2uH
CDRH
5D28
C10
0.1uF
U1
MAX8529
R4
30.1k
R6
10k
C11
4.7uF
25V
X5R
BST2 21
DH2
15 LX1
18 PGND
R5
1k
C5
4.7nF
14
5
IN
C9
4.7uF
10V
X5R
R15
68k
R16
33k
8
4
GND
7
R17
4.99k
8529_1c8
RWY
4/11/03
Efficiency, Ripple and Current Limit Measurements

Vin
11.96
10.80
11.95
13.27
20MHz BW
Ilim
Iin
0.0501
0.5882
0.5432
0.5024
V1
1.7972
1.7952
1.7954
1.7956
12mVpp
I1
0
0.8006
0.8006
0.8006
1.4A
V2
3.3008
3.2986
3.2992
3.2997
16mVpp
I2
0
1.102
1.102
1.102
1.7A
Efficiency
0.799
0.782
0.761
1.2MHz, Dual Output, All Ceramic Step-Down Converter for xDSL

Modems
BILL OF MATERIALS
3.3V @ 1.1A, 1.8V @ 0.8A Output
4/11/03
8529_1c8
DESIGNATION
C1,C12
QTY
2
C2,C11
C3,C7,C10
C4,C13
C5,C15
C6,C14
C8
3
2
2
2
1
C9
D1
L1,L2
N1,N2
R1,R2,R9,R10
R3,R11
R4
R5,R13
R6,R14
R7,R8,R16
R12
R15
R17
U1
4
2
1
2
2
3
1
1
1
1
DESCRIPTION
Taiyo Yuden JMK432BJ107MUL
Taiyo Yuden TMK316BJ224MF
100mA 30V Dual Schottky diode (SOT-23)
Central Semi CMPSH-3A
6.2uH 1.8A Inductor
Sumida CDRH5D28-6R2
Fairchild NDS9956A
MAX8529EEG (24-QSOP)
POWER
C1
10uF
10V
6
7
8
ON 1.8
2
C3
0.1uF
IN
LX
9
L1
10uH
2.3A
LIM
SYNC/PWM
SHDN
BP
U6
MAX1692
FB
C2
10uF
10V
+1.8V @ 400mA
C5
47pF
R2
10.0k
1%
REF
PGND
R1
4.64k
1%
10
GND
3
C4
0.22uF
ON 2.5
7
POWER
2
C
2uF
+2.7V
1
C
1uF
R
116k
SHDN1
IN
SHDN2
U7
MAX8865
OUT1
OUT2
SET1
SET2
C
1uF
R
100k
+2.5V @ 100mA
3
VCC
U8
RESET
MAX809
R
100k
RWY
12/19/00
GND
3
R
100k
GND
1
Li+ to +1.8V@400mA, +2.5V@100mA
RST 2.5
1.2MHz, All Ceramic Dual Step-Down Converter with PowerOn Reset

6V Input, 1.8V/3A and 2.5V/3A outputs
Full Load Efficiency = 86% at 6V Input
5.4V to 6.6V
VIN
D1A,B
CMPSH-3A
C8
0.22uF
10V
C2
10uF
10V
X5R
(2x)
16
L1
1.0uH
DO3316P
-102HC
1.8V @
3A
VOUT1
C3
0.1uF
R1
3.3
R2
3.3
N1A,B
FDS
C1
6912A
22uF
6V
R3
X5R
(2x) 16.5k
C4
390pF
19
VL
BST1
14 DH1
15 LX1
17 DL1
18 PGND
11
DH2
LX2
DL2
23
22
20
VL
24
6
R9
100k
C7
0.22uF
VL
8529_1v8
RWY
1/06/03
R14
560
C14
10pF
13
RESET
C12
22uF
6V
R12 X5R
16.5k (2x)
EN
SYNC
RST
CKO
OSC
REF
GND
7
C13
390pF
R15
10k
COMP2 1
ILIM2
2.5V @
3A
VOUT2
N2A,B
FDS
6912A
R13
11.0k
10 ILIM1
R8
68k
R10
3.3
R11
3.3
FB2 2
FB1
12 COMP1
R7
22k
L2
1.5uH
DO3316P
-152HC
C10
0.1uF
U1
MAX8529
C6
27pF
C5
1nF
C11
10uF
10V
X5R
(2x)
BST2 21
R4
20.5k
R5
560
R6
10k
5
IN
C9
4.7uF
10V
X5R
C15
1nF
3
R16
68k
R17
68k
9
8
4
R18
4.99k
1.2MHz, All Ceramic Dual Step-Down Converter with PowerOn Reset

6V Input, 1.8V/3A and 2.5V/3A outputs
Full Load Efficiency = 86% at 6V Input
BILL OF MATERIALS
5.4V to 6.6V Input
1.8V @ 3A, 2.5V @ 3A Output
1/06/03
8529_1v8
DESIGNATION
C1,C12
QTY
4
C2,C11
C3,C10
C4,C13
C5,C15
C6,C14
C7,C8
2
2
2
2
2
C9
D1
L1
L2
N1,N2
R1,R2,R10,R11
R3
R4
R5,R14
R6,R15
R7
R8,R16,R17
R18
U1
4
1
1
2
2
1
3
1
1
DESCRIPTION
100mA 30V Dual Schottky diode (SOT-23)
Central Semi CMPSH-3A
1.0uH 11A Inductor
1.5uH 9A Inductor
Fairchild FDS6912A
MAX8529EEG (24-QSOP)
C4
1uF
10V
10V to 14V
VIN
D1
CMPSH-3
C3
2.2nF
9
R1
120k
16
VP
15
VL
ILIM
BST
COMP
DH
13
LX
DL
VL
GND
U1
MAX1864T
R2
100k
11
C5
0.1uF
R3
3.3
R4
3.3
POK
FB
B2
4
5
R5
220
0.25W
R8
10.0k
B3
C7
4.7uF
25V
X5R L1
3.3uH
DO5022P
-332HC
D2
EC31
QS03L
C10
47nF
FB2
N1
IRF
7811
N2
IRF
7811
10
OUT
1
POK
14
12
C2
33pF
C1
3.3nF
C6
47uF
25V
OS-CON
(2x)
R6
220
3.3V@7A
VOUT
C8
820uF
6V
MV-EXR
(2x)
VIN
Q2
KSH30
R7
30.9k
C9
10uF
10V
X5R
5V @ 150mA
V2
C11
47uF
10V
HC
7
8
FB3
VL
1864_3a
RWY
3/27/02
Vin
12.012
9.989
12.008
14.004
Iin
0.047
2.670
2.259
1.969
Vout
3.3220
3.3262
3.3272
3.3276
45mVpp
Iout
0
7.007
7.007
7.007
V2
5.0846
5.0722
5.0743
5.0777
30mVpp
I2
0
0.1505
0.1505
0.1505
Efficiency
0.902
0.887
0.873
10V to 14V Input

3.3V @ 7A, 5V @ 0.15A Output
3/27/02
1864_3a
DESIGNATION
C1
C2
C3
C4
QTY
1
1
1
1
C5
C6
1
2
C7
C8
C9
C10
C11
1
1
D1
D2
L1
N1,N2
Q2
R1
R2
R3,R4
R5
R6
R7
R8
U1
1
1
2
1
1
1
1
1
DESCRIPTION
47uF 25V organic semiconductor cap
Sanyo 25SC47M
Sanyo 6MV820EXR
Sanyo 10MV47HC
Nihon EC31QS03L
12m Ohm N-channel MOSFET (SO-8)
1A 40V PNP transistor (D-PAK)
Fairchild KSH30
220 Ohm 0.25W 5% resistor (1210)
BILL OF MATERIALS
9V to 12V Input
6V @ 1.5A, 1.5V @ 3A Output
9/27/04
9V to 12V
VIN
VL
C7
0.1uF
VOUT2
6V
@1.5A
R2
680
C2
10uF
16V
X5R
(2x)
L2
10uH
N1A
FDS6930A
N1B
FDS6930A
R21
3.9
C11
4.7uF
10V
X5R
C39
330pF
C5
0.1uF
R29
10
R31
10
R6
100k
D2
1 BST2
BST1 28
2 DH2
DH1 27
3 LX2
U1
MAX8538
LX1 26
4 ILIM2
ILIM1 25
6 DL2
DL1 23
PGND
7 POK2
R19
100k
R30
10
EN1
R9
33k
(600kHz) 10
FREQ
R3
1.2k
N2A
FDS6984S
N2B
FDS6984S
V+
21
AVL 20
C19
39pF
R12
1k
R11
33k
C18
10pF
R10
66.5k
8538_1b5
RWY
9/27/04
Vin
10.51
8.80
10.51
12.20
20MHz BW
Current limit
C17
1nF
R23
10.0k
C23
33nF
Iin
0.038
1.68
1.42
1.23
Vout1
1.504
1.505
1.505
1.505
20mVpp
11 COMP2
COMP1 18
12 FB2
FB1 17
13 SS2
SS1 16
14 N.C.
Iout1
0
3
3
3
C40
1nF
VL
C13
4.7uF
GND 15
C20
22pF
C24
33nF
Vout2
6.12
6.12
6.12
6.12
40mVpp
~3.9
R8
4.7
C15
1uF
R13
1k
C22
220pF
R15
8.87k
R16
10.0k
Iout2
0
1.50
1.50
1.50
~2.1
BILL OF MATERIALS
9V to 12V Input
6V @ 1.5A, 1.5V @ 3A Output
8538_1b5
DESIGNATION
C2,C4
QTY
3
C5,C6,C7,C10
C11
4
1
C12,C41
C12
22uF
6V
X5R
(2x)
R7
2.2
C14
1uF
C21 R14
4.7nF 9.1k
VOUT1
1.5V
@3A
L1
2.2uH
R22
2.2
VL 22
GND 19
EN
C4
10uF
16V
X5R
R32
10
24
8 EN2
POK1
POK2
C6
0.1uF
5 POK1
VL
R5
100k
C10
0.1uF
C41
22uF
6V
X5R
D1
DESCRIPTION
Efficiency
0.926
0.918
0.913
C13
C14,C15
C17
C18
C19
C20
C21
C22
C23,C24
C39
C40
D1,D2
1
1
1
1
1
1
2
1
1
1
L1
L2
N1
N2
R2
R3
R5,R6,R19
R7
R8
R9,R11
R10
R12,R13
R14
R15
R16,R23
R21
R22
R29,R30,R31,R32
U1
1
1
3
1
1
2
1
2
1
1
2
1
1
4
1

Central Semi CMOSH-3
2.2uH 5.3A Inductor
Toko FDV0630-2R2
10uH 3A Inductor
Sumida CDRH6D38-100
FDS6930A
FDS6984S
2.2 Ohm 0.25W 5% resistor (1210)
9V to 12V Input
3.4V @ 1.75A, 2.6V @ 3A Output
9/23/04
9V to 12V
VIN
C7
0.1uF
VOUT2
3.4V
@1.75A
R2
680
C2
10uF
16V
X5R
L2
4.7uH
N1A
FDS6930A
N1B
FDS6930A
R21
3.9
C11
22uF
6V
X5R
C39
330pF
C5
0.1uF
R29
10
R31
10
R6
100k
C10
0.1uF
D2
1 BST2
BST1 28
2 DH2
DH1 27
3 LX2
U1
MAX8538
LX1 26
4 ILIM2
ILIM1 25
6 DL2
DL1 23
PGND
7 POK2
R19
100k
R30
10
EN1
R9
20.0k
(1MHz) 10
FREQ
R3
1.1k
N2A
FDS6984S
N2B
FDS6984S
C19
100pF
R12
1.8k
R11
68k
C17
680pF
R10
33.2k
8538_2a6
RWY
9/23/04
Vin
10.51
8.95
10.50
12.06
20MHz BW
Current limit
R23
10.0k
C23
33nF
Iin
0.045
1.71
1.47
1.29
Vout1
2.603
2.603
2.603
2.603
<40mVpp
11 COMP2
V+
21
AVL 20
COMP1 18
12 FB2
FB1 17
13 SS2
SS1 16
14 N.C.
GND 15
Iout1
0
3.00
3.00
3.00
R22
2.2
C13
4.7uF
R7
2.2
C14
1uF
C21 R14
470pF 68k
R8
4.7
C15
1uF
R13
3.3k
C5,C6,C7,C10
C11,C12
4
2
C22
68pF
R15
22.6k
C24
33nF
Vout2
3.45
3.45
3.46
3.46
<40mVpp
~3.6A
QTY
2
C12
22uF
6V
X5R
C40
1nF
R16
10.0k
Iout2
0
1.75
1.75
1.75
~2.1A
BILL OF MATERIALS
9V to 12V Input
3.4V @ 1.75A, 2.6V @ 3A Output
8538_2a6
DESIGNATION
C2,C4
VOUT1
2.6V
@3A
L1
2.7uH
VL 22
GND 19
EN
C4
10uF
16V
X5R
R32
10
24
8 EN2
POK1
POK2
C6
0.1uF
5 POK1
VL
R5
100k
VL
D1
DESCRIPTION
Efficiency
0.905
0.898
0.891
C13
C14,C15
C17
C19
C21
C22
C23,C24
C39
C40
D1,D2
1
1
1
1
2
1
1
1
L1
L2
N1
N2
R2
R3
R5,R6,R19
R7
R8
R9
R10
R11
R12
R13
R14
R15
R16,R23
R21
R22
R29,R30,R31,R32
U1
1
1
3
1
1
1
1
1
1
1
1
1
2
1
1
4
1

Central Semi CMOSH-3
2.7uH 4.4A Inductor
Toko FDV0630-2R7
4.7uH 3.3A Inductor
Toko FDV0630-4R7
FDS6930A
FDS6984S
2.2 Ohm 0.25W 5% resistor (1210)
M AX1865
Vin 6 TO 14 V
Vout 3.3V @ 0.35A, 1.8V @ 0.35A, 5V @ 0.35A, -48V @ 0.1A
6V to 14V
INPUT
C5,C6
390uF
25V
MV-AX
(2x)
D1
CMPSH-3
C4
1uF
10V
20
VP
BST
VL
19
DH
17
LX
16
DL
15
T1
4:4:17:17:17:17
Lpri = 2.2uH
SG3 (EFD15)
FB
B2
ILIM
R20
1k
T1
R8
4.64k
1%
FB2 6
11
R9
10.0k
1%
B3
2
COMP
C12
47uF
10V
HC
R21
2..0k
1.8V @ 350m A
D2
EC10QS03L
C14
330uF
10V
MV-AX
6.3
VOLTS
Q2
FTZ749
C28
0.1uF
FB3
C2
100PF
R10
220
Q1
FTZ749
C17
0.22uF
R2
24.9k
C9
C8
680uF
680uF
6.3V
6.3V
OS-CON OS-CON
R6
10
R7
100
3.3V @ 350m A
12
N1B
OUT
R3
249k
C1
0.1uF
R5
10
GND 14
13
N1A
1/2
FDS
6990A
1
1 POK
R1
4.7k
C3
0.1uF
VL
R4
100k
POK
18
5V @ 350m A
8
R11
30.9k
1%
R12
10.0k
1%
C13
47uF
10V
HC
U1
MAX1865T
VL
B4
10
FB4
-48V @ 100m A
C25
39uf
100V
MV-AX
C23
0.22uF
25V
CER
C24
0.22uF
25V
CER
R19
330
R18
330
D6
10MQ100N
R13
3.74k
1%
10
R14
36.0k
1%
B5
11
SM
01/24/05
+6.4
VOLTS
R15
220
Q3
KSH
29C
C19
0.1uF
R22
2.0k
D3
10MQ100N
C30
100pF
T1
12
R16
330
D4
10MQ100N
C31
100pF
T1
FB5
R17
330
D5
10MQ100N
C32
100pF
C21
0.22uF
25V
CER
C22
0.22uF
25V
CER
C29
100pF
T1
T1
4
C26
18uf
63V
MV-AX
MAX1865
6-14V Input
3.3V @ 0.35A, 1.8V @ 0.35A, 5V @ 0.35A, -48V @ 0.1A Out
100
90
EFFICIENCY %
80
70
60
50
40
30
20
EFFICIENCY
10
0
5
10
11
INPUT VOLTS
12
13
14
15
MAX1865
6-14V Input
3.3V @ 350mA, 1.8V @ 350mA, 5V @ 350mA, -48V @ 100mA Output
01/24/05
DESIGNATION
QTY DESCRIPTION
C2, C29 - C32
C1, C3, C19, C28
C17
C21-C24
C4
C26
C25
1
1
Cap 100pF 100V Ceramic NPO 0603,

Panasonic (ECJ-1VC2A101J)
Cap 0.1F 16V Ceramic X7R 0603, Taiyo
Yuden (EMK107BJ104MA)
Cap 0.22F 16V Ceramic X5R 0603, Taiyo
Yuden (EMK107BJ224MA)
Cap 0.22uF 25V X7R Ceramic 1206,
Panasonic (ECJ-3VB1E224K)
Cap 1.0uF 10V X7R Ceramic Cap 0805
Taiyo Yuden (LMK212BJ105MG)
18uF 63V Electrolytic, Sanyo (63MV18AX)
Cap 39uF 100V Electrolytic, Sanyo
(100MV39AX)
2
C12, C13
C14
C8, C9
C5, C6
D1
D2
D3 - D6
N1A, N1B
Q1, Q2
Q3
R5, R6
R7
R10, R15
R16 - R19
R20
R21, R22
R8
R1
R13
R9, R12
R2
R11
R14
R4
R3
T1
2
1
2
4
1
2
1
1
1
2
1
1
1
1
1
1
U1
Cap 47UF 10V Electrolytic, Sanyo

(10MV47HC)
Cap 330uF 10V Electrolytic, Sanyo
(10MV330AX)
Cap 680uF 6.3V Organic Semiconductor,
Sanyo (6SP680M)
Cap 390 UF 25V Electrolytic,
Sanyo (25MV390AX)
Diode 30V 0.1A Schottky SOT-23, Central
Semi (CMPSH-3)
Diode 1A 30V Schottky SMA, Nihon
(EC10QS03L)
Diode 1A 100V Schottky SMA,
International Rectifier (10MQ100N)
NFET Dual 0.023 Ohm 30V SO-8, Fairchild
(FDS6990A)
Transistor 25V PNP,SOT-223, Fairchild
(FTZ749)
Transistor 100V NPN D-PAK, Fairchild
(KSH29C)
Resistor 330 Ohm 0.25W 5% 1210
Resistor 1.0K Ohm 5% 0805
Resistor 2.0K Ohm 5% 0805
Resistor 36.0k Ohm 0.125W 1% 1206
Transformer EFD 15 4:4:17:17:17:17,
Coiltronics (SG3 AL-2 138)
IC xDSL/Cable Modem Quintuple Output
Power Supplies 20 QSOP, Maxim
(MAX1865TEEP)
3.3V to 5.5V Input

12V @ 2.3A Output
9/16/04
3.3V to 5.5V
VIN
C1
47uF
6V
X5R
(3x)
C2
0.22uF
10
1
9
VCC
SHDN
EXT
LDO
CS+
C4
1uF
2
4
R4
200k
(250kHz)
6
C9
1nF
R5
100
FB
C5
68uF
20V
TANT
(4x)
C8
1uF
16V
R2
87.7k
GND
C3
0.22uF
R1
0.007
12V @ 2.3A
VOUT
FREQ
REF
D1
CMSH5-40
(2x)
N1
FDS
6570A
U1
MAX668
PGND
L1
4.7uH
C7
1nF
R3
10.0k
668_12f
RWY
9/16/04
Vin
5.00
3.29
3.61
4.49
5.01
5.52
20MHz BW
Iin
0.0006
9.77
8.72
6.82
6.05
5.46
Vout
12.36
12.08
12.11
12.16
12.18
12.20
250mVpp
Iout
0
2.3
2.3
2.3
2.3
2.3
Efficiency
0.864
0.884
0.913
0.924
0.931
BILL OF MATERIALS
3.3V to 5.5V Input
12V @ 2.3A Output
668_12f
DESIGNATION
C1
QTY
3
C2,C3
C4
C5
C7,C9
C8
1
1
D1
L1
N1
R1
R2
R3
R4
R5
U1
1
1
1
1
1
1
DESCRIPTION
68uF 20V tantalum capacitor (X case)
Coiltronics HC2-4R7
Fairchild FDS6570A
0.007 Ohm 1W 5% resistor (2512)
MAX668EUB (10-uMAX)
7/20/99 - LHS
+11V to 14.3V Input to 16V at 70 Watts (4.4A)
11V to 14.3V
IN
L1
BH Q10284-2
3.9uH, 9A
C1
Sanyo
MV-GX
560uF
25V
D1 MBRD835LT4
R7 4.7
Vout
16V 4.4A (70
Watts)
Q1
NDS8426A
8
EXT
9
10
1
C7
4.7uF
C8
0.22
VCC
CS+
SHDN
LDO
U1
MAX668
PGND
REF
FREQ
2
FB
R5
200k
GND
R6
100
C9
0.001
R3
0.012
7
C6
0.047
C2-C5
Sanyo MV-GX
560uF 25V x4
R1
12.4k
R2
1k
NOTES:
1) Capacitor C2-C5 are connected in parallel for ripple
current rating. Fewer caps may be used if ripple current
ratings allow
2) Measured efficiency was 93% at 12V Input and full load
1/31/2000 - LHS
-48V input to +5V, 4A
Unisolated Output
Q1
Motorola
MTD15N06VL
R5
47k
Q2
MMBT5551
D3
12V
zener
R1
4.7k
VCC
EXT
SYNC/SHDN\
10
CS+
GND
REF
C5
1uF
C6
0.22
R2
1.36k
FREQ
2
R6
240k
C5
1uF
Q3:
MMBT5401
R3
0.04
U1 PGND
MAX668
5
FB
LDO
Vout
5V 4A
C1 120uF
63V
Sanyo
100MV
120GX
D2
Motorola
MBRD660CT
C3,C4
220uF 10V
R7
10 Ohms
C2
0.1
L1
Sumida
CDRH127
47uH 2.5A
- 48V
INPUT
Notes:
1) D2 MBRD660CT is a 6A rated 60V Schottky diode. A 4 Amp rated diode would be
sufficient. The diode voltage rating must be greater than Vout-Vin(max)
2) Q1 MTD15N06VL is a 60V rated MOSFET, if the input tolerance requires that the
maximum input voltage will exceed -55V, then a MOSFET with a higher voltage rating will
be needed. It must exceed Vout-Vin(max).
3)Q2(NPN) and Q3(PNP) may be any signal transistor that has a rating exceeding VoutVin(max)
12V INPUT
C3
10uF
25V
1
C1
1uF
10
9
VCC
EXT
LDO
SHDN
CS+
RWY
3/22/00
4
C2
0.22uF
7
C4
47pF
FREQ
REF
FB
GND
3
N1
IRF
7413
R2
0.02
0.5W
PGND
R1
100k
(500kHz)
D1
MBRD640
R5
10
MAX668
L1
3.9uH
CDRH
124
5
C5
220pF
+12V to +18.75V
R3
169k
1%
R4
12.1k
1%
+18.75V @ 3.1A
C6
3x33uF
25V
R5
150k
1%
1.25V = 0%
0V = +8%
2.5V = -8%
13.5V to 26.4V Input to 48V at 0.2A Output

13.5V to 26.4V
VIN
C1
100uF
35V
MV-AX
C2
0.22uF
35V
10
1
9
VCC
SHDN
EXT
CS+
LDO
C4
1uF
2
4
R6
10
C8
1nF
R5
100
FB
R1
0.1
C5
39uF
100V
MV-AX
48V @ 0.2A
VOUT
C9
0.1uF
100V
7
R2
374k
FREQ
REF
D1
CMR1U-01
N1
NDT
3055L
U1
MAX668
PGND
R4
100k
(500kHz)
L1
100uH
GND
C3
0.22uF
C6
1nF
R3
10.0k
668_48a
RWY
9/06/05
#1
Vin
15.00
13.47
15.00
26.57
20MHz BW
#2
Vin
15.00
13.47
15.00
26.62
20MHz BW
Iin
0.78
0.69
0.38
Iin
0.78
0.69
0.38
Vout
47.79
46.64
46.74
47.22
<800mVpp
Vout
47.90
46.76
46.86
47.34
<700mVpp
Iout
Efficiency
0.20
0.20
0.20
0.888
0.903
0.935
Iout
Efficiency
0.20
0.20
0.20
0.890
0.906
0.936
BILL OF MATERIALS
48V @ 0.2A Output
9/06/05
668_48a
DESIGNATION
C1
QTY
1
C2
C3
C4
C5
C6,C8
C9
D1
2
1
1
L1
N1
R1
R2
R3
R4
R5
R6
U1
1
1
1
1
1
1
1
DESCRIPTION
Sanyo 35MV100AX
Taiyo Yuden GMK212BJ224MG
Sanyo 100MV39AX
120m Ohm 60V N-ch MOSFET (SOT-223)
Fairchild NDT3055L
MAX668EUB (10-uMAX)
12/16/98 - LHS
-18V to -24V input to +5V/350mA, +3.3V/150mA, -6V/6mA, -24V/30mA, -85V/1mA

Unisolated Outputs
T1 Winding #1
(Primary 90uH, 1.2 Amp peak)
C1
47uF
35V
D1
C2 100uF
R4 10
9
VCC
CS+
10
1
C5
0.22
R1
18k
Q1
6
R3
0.082
Q2
U1 PGND 7
MAX668
5
3
Vout2
3.3V 150mA
U2 4
MAX
8867 5
C15
1uF
FB
LDO
REF
C3
1uF
EXT
SHDN
C4
3.3uF
Vout1
5V 350mA
GND
R2
5.11k
R5
160k
T1: 90uH, 1A
Primary. Turns ratio for
windings #1:#2 is 7:3
Primary resistance
should be less than 0.3
Ohms
Node swings from +7V to

(-25 to -34V) as Vin
varies from -18V to -24V
C6
0.1
50V
D6
C7
0.1
50V
D5
Vin: -18V to
-24V INPUT
T1
winding #2
D2
C14
0.01
C10
22uF 50V
-25V to -34V
R6
10k
D3
D4
Q3
D7
6.2V
R8
27k
C8
1uF
50V
Vout3
-6V 6mA
C11
0.1
C9
1uF
50V
Q5
Vout5
-85V 1mA
C13
1uF
160V
R7
10k
D9 43V
D10 43V
D8
24V
The transformer specs:

Primary L=90uH (100uH is fine)
Primary saturation current = 1.2A
Turns ratio: 7:3 as shown on the schematic
Full Parts List
C1
47uF 35V Sanyo GX (Tantalum not recommended here)
C2
100uF 10V Tantalum (AVX TPS) or Sanyo GX
Q4
Vout4
-24V 30mA
C12
0.1
C3
C4
C5
C6, C7,
C11, C12
C8, C9
C10
C13
C14
C15
D1
D2
D3/D4,
D5/D6
D7
D8
D9, D10
R1,R2,
R4-R8
R3
T1
Q1
Q2-Q4
Q5
U1
U2
1uF ceramic
3.3uF ceramic (tantalum OK here)
0.22uF ceramic
0.1uF 50V ceramic
1uF 50V ceramic (polarity is shown on schematic in case the
customer wants to substitute electrolytic caps)
22uF 50V aluminum electrolytic
1uF 160V aluminum electrolytic (Panasonic NHG series:
ECA-2CHG010)
0.01uF ceramic
1uF ceramic
MBR0540L 40V 0.5A Schottky diode
Central semiconductor CMPB4448 (or any 1N4448
equivalent 60V signal diode)
Central semiconductor CMPD7000 dual diode (These are
duals, but four 1N4448 equivalent 60V signal diodes can be
substituted for D3+D4 and D5+D6.)
Zetex BZX84C6V8, Panasonic MA3068CT, or other 6.8V
SOT-23 zener diode (On this evaluation board this is
composed of a 6.2V diode in series with a silicon diode to
make a 6.8V zener. It is shown a single 6.8V zener on the
schematic)
Zetex BZX84C24, Panasonic MA3240CT, or other 24V
SOT-23 zener diode
Zetex BZX84C43 or other 43V SOT-23 zener diode
1% generic surface mount resistors
0.082 current sense resistor IRC, Dale or others
Two-winding custom transformer:
Primary inductance: 90uH
Primary Ipeak: 1.2 Amps
Primary/Secondary turns ratio: 7/3
(This board uses a Coiltronics Standard Geometry core part
no: SG2 ER14.5/6 with 28 turns of 30awg wire on the
primary and 12 turns of 30awg wire on the secondary
Fairchild NDT410EL 100V 0.25 at 5V Vgs (Any substitute
N-FETs should be rated for at least 60V and must have Ron
rated at 5V Vgs)
2N3906 (any 60V PNP signal transistor is OK)
Zetex FMMT596 (any 150V PNP signal transistor is OK)
MAX668 PWM DC-DC Controller
MAX8867 linear regulator
2/16/99 - LHS
+2.5V-6V to 3.3V 1.5A DC-DC SEPIC Converter (3.3V at
1.7A output for Vin > 3.3V)
2.5V to 6V
IN
C1
180uF
16V
C6
1uF
9
10
T1A
C2 10uF 16V
D2
1
LDO
EXT
VCC
Q1
CS+
Vout
3.3V 1.5A
D1
C3
220uF
6.3V
T1B
SHDN
7
R3
0.02
U1 PGND
MAX669
5
R1
180k
FB
C4
0.22
REF
GND
FREQ
2
C5
470pF
R2
110k
R5
200k
Parts/Notes:
T1A/B: 5.4uH, BH Magnetics #510-1010 (two windings in one octagonal
shaped case. General specs: transformer with two 5uH 4Amp windings
D1: Central Semiconductor CMSH2-40 (or any 2Amp Schottky)
D2 Central Semiconductor CMPSH-3 (or any 100mA Schottky)
Q1: Fairhild NDH833N (any 25mOhm 20V NFET)
R1: Dale WSL2512-R020F (any 20mOhm resistor)
C1: 180uF 10V AVX TPS or Sprague 595 (tantalum) or Sanyo GX (low
ESR aluminum)
C2: 10uF ceramic capacitor
C3: 220uF 10V AVX TPS or Sprague 595 (tantalum) or Sanyo GX (low
ESR aluminum)
Note: This circuit may not start under full load at low input voltages
Efficiency data:
Vin (v)
2.5.17
2.512
3.607
3.610
6.013
6.008
Iin (mA)
806
2700
559
1755
346
1018
Vout (V)
3.244
3.210
3.250
3.225
3.261
3.234
Iout (mA)
500
1502
500
1502
500
1502
Eff (%)
80.0
71.1
80.6
76.5
78.4
79.4
VIN
8V to 20V
4,5,6
T1
VP2-0216
10,11,12
CIN
10F
25V Ceramic
1,2,3
VBIAS
4.5V to 5.5V
10
1
C4
4.7F 25V
9
VCC
SHDN
EXT
CS+
2
4
C3
100pF
C2
0.22F
FREQ
REF
FB
R2
12m
1W
C5
100pF
GND
3
Note: T1 may be replaced with two individual inductors
OUTPUT
VOLTAGE
LOAD CURRENT
0.1A to 2A
R3
218k
1%
VFB = 1.25V
C6
1000pF
T1 = 10.6H 1:1 COILTRONICS VP2-0216

COUT = (2) 47F 16V 70m SANYO 16TPB47M + (1) 10F
16V Ceramic
N1 = 13m 40V N-Channel, Fairchild FDS4672A or
Innternational Rectifier IRF7468
D1 = 3A 40V Schottky Diode
8V to 20V into +12.0V up to 2A

rev B
COUT
(2) 47F
(1) 10F
N1
6
R6
100
PGND
R1
100k
(500kHz)
U1
MAX668
+12V
2.5A (max)
D1
R5
0
LDO
C1
1F
7,8,9
R4
24.9k
1%
2.7V to
5.5V Input
2
(POK, LBO
UNUSED)
6
16
to OUT
1
4
8
C7
0.22
L1 10uH
Sumida
CDRH6D28-100
(10uH 1.7A)
LBN
LXP
POK
LBO
POUT
MAX1701
LBP
OUT
FB
14
R1
10
C3
0.22
AIN
C4
100uF
6.3V
C5
100pF
R3
215k
R4
100k
9
10
R5 205k
ONB\ PGND GND

12
C2
220
uF
R2
6.3V
20k
11
C6
560pF
AO
Q1
NDC632P
3.8V 0.8A
15
REF
D1
Nihon
EC21
QS03L
13
CLK/SEL
ONA
C1
220uF
6.3V
AVX
TPS
R6 100k
7/20/00
RWY
Vin (V)
2.702
3.001
3.588
3.800
4.199
4.501
5.001
Iin (A)
1.327
1.229
0.989
0.925
0.840
0.801
0.799
Vout (V)
3.671
3.757
3.765
3.767
3.770
3.781
3.785
Iout (A)
0.800
0.800
0.800
0.800
0.800
0.800
0.800
Efficiency
0.8191
0.8149
0.8488
0.8574
0.8551
0.8390
0.7578

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