Unit 1

www.Vidyarthiplus.
com
UNIT I
Power Semiconductor
Devices
www.Vidyarthiplus.com
Introduction
What are Power Semiconductor Devices (PSD)?

They are devices used as switches or rectifiers in
power electronic circuits
What is the difference of PSD and low-power

semiconductor device?
Large voltage in the off state
High current capability in the on state
Classification
Fig. 1. The power semiconductor devices family

Important Parameters
Breakdown voltage.
On-resistance.
Trade-off between breakdown voltage and
on-resistance.
Rise and fall times for switching between on
and off states.
Safe-operating area.
Power MOSFET: Structure

Power MOSFET has much higher current handling capability in
ampere range and drain to source blocking voltage(50-100V)
than other MOSFETs.
Fig.2.Repetitive pattern of the cells

structure in power MOSFET
Power MOSFET: R-V Characteristics

An important parameter of a power MOSFET is on resistance:
Ron = RS + RCH + RD , where RCH =
L
W nCox (VGS VT )
Fig. 3. Typical RDS versus ID characteristics of a MOSFET.

Thyristor: Structure
Thyristor is a general class of a four-layer pnpn
semiconducting device.
Fig.4 (a) The basic four-layer pnpn structure.

(b) Two two-transistor equivalent circuit.
Thyristor: I-V Characteristics

Three States:
Reverse Blocking
Forward Blocking
Forward Conducting
Fig.5 The current-voltage
characteristics of the pnpn device.
Applications
Power semiconductor devices have widespread
applications:
Automotive
Alternator, Regulator, Ignition, stereo tape
Entertainment
Power supplies, stereo, radio and television
Appliance
Drill motors, Blenders, Mixers, Air conditioners
and Heaters
Thyristors
Most important type of power
semiconductor device.
Have the highest power handling
capability.they have a rating of 1200V /
1500A with switching frequencies ranging
from 1KHz to 20KHz.
Is inherently a slow switching device

compared to BJT or MOSFET.
Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.
Different types of Thyristors
Silicon Controlled Rectifier (SCR).

TRIAC.
DIAC.
Gate Turn-Off Thyristor (GTO).
SCR
Symbol of
Silicon Controlled
Rectifier
Structure
Cathode
Gate
n
J3
19
10
-3
cm
n
10
17
cm
-3
J2
J1
10
10
13
17
10
19
-5 x 10
cm
14
cm
-3
19
10
-3
cm
}
}
-3
Anode
10m
30-100m
}
}
-3
cm
50-1000m
30-50m
Device Operation
Simplified model of a
thyristor
V-I
Characteristics
Effects of gate current
Two Transistor Model of SCR
Considering PNP transistor

of the equivalent circuit,
I E 1 = I A , I C = I C1 , = 1 ,
I CBO = I CBO1 , I B = I B1
I B1 = I A (1 1 ) I CBO1 (1)
Considering NPN transistor

of the equivalent circuit,
I C = I C2 , I B = I B2 , I E2 = I K = I A + I G
I C2 = 2 I k + I CBO2
I C2 = 2 ( I A + I G ) + I CBO2 ( 2 )
From the equivalent circuit,

we see that
I C2 = I B1
2 I g + I CBO1 + I CBO 2
IA =
1 (1 + 2 )
Case 1: When I g = 0
IA =
I CBO1 + I CBO2
1 (1 + 2 )
Case 2: When I G 0
2 I g + I CBO1 + I CBO 2
IA =
1 (1 + 2 )
Turn-on
Characteristics
ton = td + tr
VAK
tC
tq
t
IA
Anode current
begins to
decrease
Commutation
di
dt
Recovery
t1 t2
Recombination
t3
t4
t5
Turn-off
Characteristi
c
t
tq=device
off time
tc =circuit
off time
tgr
trr
tq
tc
Methods of Thyristor Turn-on
Thermal Turn-on.
Light.
High Voltage.
Gate Current.
dv/dt.
Thyristor Types
Phase-control Thyristors (SCRs).

Fast-switching Thyristors (SCRs).
Gate-turn-off Thyristors (GTOs).
Bidirectional triode Thyristors (TRIACs).
Reverse-conducting Thyristors (RCTs).
Static induction Thyristors (SITHs).

Light-activated silicon-controlled rectifiers
(LASCRs).
FET controlled Thyristors (FET-CTHs).
MOS controlled Thyristors (MCTs).
Phase Control Thyristor
These are converter thyristors.

The turn-off time tq is in the order of 50 to
100sec.
Used for low switching frequency.
Commutation is natural commutation
On state voltage drop is 1.15V for a 600V
device.
They use amplifying gate thyristor.
Fast Switching
Thyristors
Also called inverter thyristors.

Used for high speed switching applications.
Turn-off time tq in the range of 5 to 50sec.
On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
High dv/dt and high di/dt rating.
Bidirectional Triode
Thyristors (TRIAC)
Mode-I
Operation
MT (+)
2
P1
N1
P2
Ig
N2
MT1 ()
(+)
Ig
MT2 Positive,
Gate Positive
Mode-II
Operation
MT (+)
2
P1
Initial
conduction
Final
conduction
N1
P2
N3
N2
MT1 ()
MT2 Positive,
Gate Negative
V
Ig
Mode-III Operation
MT2 ()
N4
P1
N1
P2
N2
MT1 (+)
G
(+)
MT2 Negative,
Gate Positive
Ig
Mode-IV Operation
MT2 ()
N4
P1
N1
N3
P2
MT1 (+)
G
(-)
MT2 Negative,
Gate Negative
Ig
Triac Characteristics
BJT structure
heavily doped ~ 10^15
provides the carriers
lightly doped ~ 10^8
lightly doped ~ 10^6
note: this is a current of electrons (npn case) and so the

conventional current flows from collector to emitter.
BJT characteristics
BJT characteristics
BJT modes of operation
Mode
EBJ
CBJ
Cutoff
Forward
active
Reverse
active
Saturation
Reverse
Forward
Reverse
Reverse
Reverse
Forward
Forward
Forward
BJT modes of operation

Cutoff: In cutoff, both junctions reverse biased. There is very little current flow, which
corresponds to a logical "off", or an open switch.
Forward-active (or simply, active): The emitter-base junction is forward biased and the
base-collector junction is reverse biased. Most bipolar transistors are designed to afford the
greatest common-emitter current gain, f in forward-active mode. If this is the case, the
collector-emitter current is approximately proportional to the base current, but many times
larger, for small base current variations.
Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the
forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the
emitter and collector regions switch roles. Since most BJTs are designed to maximise
current gain in forward-active mode, the f in inverted mode is several times smaller. This
transistor mode is seldom used. The reverse bias breakdown voltage to the base may be an
order of magnitude lower in this region.
Saturation: With both junctions forward-biased, a BJT is in saturation mode and facilitates
current conduction from the emitter to the collector. This mode corresponds to a logical
"on", or a closed switch.
BJT structure (active)
current of electrons for npn transistor

conventional current flows from
collector to emitter.
IE
IC
VCE +
C
+
VBE
+
B
VCB
IB
MOSFET
NMOS: N-channel Metal
Oxide Semiconductor
W
L = channel length
W = channel width
GATE
L
Metal (heavily
doped poly-Si)
DRAIN
SOURCE
A GATE electrode is placed above (electrically insulated
from) the silicon surface, and is used to control the
resistance between the SOURCE and DRAIN regions
N-channel MOSFET
Gate
Source
IS
IG
Drain
gate
oxide insulator
n
ID
n
Without a gate-to-source voltage applied, no current can

flow between the source and drain regions.
Above a certain gate-to-source voltage (threshold
voltage VT), a conducting layer of mobile electrons is
formed at the Si surface beneath the oxide. These
electrons can carry current between the source and drain.
N-channel vs. P-channel

MOSFETs
NMOS
PMOS
n+ poly-Si
p+ poly-Si
n+
n+
p+
p-type Si
p+
n-type Si
For current to flow, VGS > VT
For current to flow, VGS < VT
Enhancement mode: VT > 0
Enhancement mode: VT < 0
Depletion mode: VT < 0
Depletion mode: VT > 0
Transistor is ON when VG=0V
Transistor is ON when VG=0V
(n+ denotes very heavily doped n-type material; p+ denotes very heavily doped p-type material)
MOSFET Circuit Symbols

G
NMOS
n+ poly-Si
n+
n+
p-type Si
PMOS
Body
p+ poly-Si
p+
p+
n-type Si
Body
MOSFET Terminals
The voltage applied to the GATE terminal determines whether
current can flow between the SOURCE & DRAIN terminals.
For an n-channel MOSFET, the SOURCE is biased at a lower
potential (often 0 V) than the DRAIN
(Electrons flow from SOURCE to DRAIN when VG > VT)
For a p-channel MOSFET, the SOURCE is biased at a higher

potential (often the supply voltage VDD) than the DRAIN
(Holes flow from SOURCE to DRAIN when VG < VT )
The BODY terminal is usually connected to a fixed potential.

For an n-channel MOSFET, the BODY is connected to 0 V
For a p-channel MOSFET, the BODY is connected to VDD
NMOSFET IG vs. VGS Characteristic

Consider the current IG (flowing into G) versus VGS :
IG
oxide
semiconductor
VGS +
IG
VDS
+
The gate is insulated from the

semiconductor, so there is no
significant steady gate current.
always zero!
VGS
NMOSFET ID vs. VDS Characteristics

Next consider ID (flowing into D) versus VDS, as VGS is varied:
G
S
VGS +
oxide
semiconductor
ID
VGS > VT
zero if VGS < VT
VDS
ID
VDS
+
Above threshold (VGS > VT):

inversion layer of electrons
appears, so conduction
between S and D is possible
Below threshold (VGS < VT):
no charge no conduction
The MOSFET as a Controlled Resistor

The MOSFET behaves as a resistor when VDS is low:
Drain current ID increases linearly with VDS
Resistance RDS between SOURCE & DRAIN depends on VGS
RDS is lowered as VGS increases above VT
oxide thickness tox
NMOSFET Example:
ID
VGS = 2 V
VGS = 1 V > VT
VDS
IDS = 0 if VGS < VT
Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)]

where Cox ox / tox
ID vs. VDS Characteristics
The MOSFET ID-VDS curve consists of two regions:

1) Resistive or Triode Region: 0 < VDS < VGS VT
W
ID
L
where k n
= k n
V DS
V GS V T 2 V DS
= n C ox
process transconductance parameter
2) Saturation Region:
VDS > VGS VT
k n W
(VGS VT )2
I DSAT =
2 L
where k n = n C ox
CUTOFF region: VG < VT
The Evolution Of IGBT

Part I: Bipolar Power Transistors
Bipolar Power Transistor Uses Vertical Structure For

Maximizing Cross Sectional Area Rather Than Using Planar
Structure
Base
Emitter
Collector
N+
P
Base
N+
N-
Emitter
Collector

Part II: Power MOSFET
Power MOSFET Uses Vertical Channel Structure Versus

The Lateral Channel Devices Used In IC Technology
Lateral MOSFET structure

Part III: BJT(discrete) + Power MOSFET(discrete)
Discrete BJT + Discrete Power MOSFET In Darlington

Configuration
C
N-MOSFET
D
S
NPN

Part IV: BJT(physics) + Power MOSFET(physics) = IGBT
More Powerful And Innovative Approach Is To Combine

Physics Of BJT With The Physics Of MOSFET Within Same
Semiconductor Region
This Approach Is Also Termed Functional Integration Of

MOS And Bipolar Physics
Using This Concept, The Insulated Gate Bipolar Transistor

(IGBT) Emerged
Superior On-State Characteristics, Reasonable Switching

Speed And Excellent Safe Operating Area

Part IV: BJT(physics) + Power MOSFET(physics) = IGBT
IGBT Fabricated Using Vertical Channels (Similar To Both

The Power BJT And MOSFET)
Device Operation
Operation Of IGBT Can Be Considered Like A PNP

Transistor With Base Drive Current Supplied By The
MOSFET
DRIVER CIRCUIT (BASE / GATE)
Interface between control (low power electronics) and (high power) switch.
Functions:
amplifies control signal to a level required to drive power switch
provides electrical isolation between power switch and logic level
Complexity of driver varies markedly among switches. MOSFET/IGBT drivers
are simple but GTO drivers are very complicated and expensive.
ELECTRICAL ISOLATION FOR DRIVERS
Isolation is required to prevent damages on

the high power switch to propagate back to
low power electronics.
Normally opto-coupler (shown below) or high
frequency magnetic materials (as shown in
the thyristor case) are used.
ELECTRICAL ISOLATION FOR DRIVERS
Power semiconductor devices can be categorized into 3

types based on their control input requirements:
a) Current-driven devices BJTs, MDs, GTOs
b) Voltage-driven devices MOSFETs, IGBTs, MCTs
c) Pulse-driven devices SCRs, TRIACs
CURRENT DRIVEN DEVICES (BJT)
Power BJT devices have low current gain due to

constructional consideration, leading current than would
normally be expected for a given load or collector current.
The main problem with this circuit is the slow turn-off time.
Many standard driver chips have built-in isolation. For
example TLP 250 from Toshiba, HP 3150 from HewlettPackard uses opto-coupling isolation.
ELECTRICALLY ISOLATED DRIVE CIRCUITS
EXAMPLE: SIMPLE MOSFET GATE DRIVER
Note: MOSFET requires VGS =+15V for turn on and 0V to

turn off. LM311 is a simple amp with open collector
output Q1.
When B1 is high, Q1 conducts. VGS is pulled to ground.
MOSFET is off.
When B1 is low, Q1 will be off. VGS is pulled to VGG. If
VGG is set to +15V, the MOSFET turns on.

Unit 1

Uploaded by

Document Information

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Unit 1

Uploaded by

Copyright:

Available Formats

www.Vidyarthiplus.

What are Power Semiconductor Devices (PSD)?

What is the difference of PSD and low-power

Fig. 1. The power semiconductor devices family

Power MOSFET: Structure

Fig.2.Repetitive pattern of the cells

Power MOSFET: R-V Characteristics

Fig. 3. Typical RDS versus ID characteristics of a MOSFET.

Fig.4 (a) The basic four-layer pnpn structure.

Thyristor: I-V Characteristics

Is inherently a slow switching device

Different types of Thyristors

Silicon Controlled Rectifier (SCR).

Effects of gate current

Two Transistor Model of SCR

Considering PNP transistor

Considering NPN transistor

From the equivalent circuit,

Methods of Thyristor Turn-on

Phase-control Thyristors (SCRs).

Static induction Thyristors (SITHs).

Phase Control Thyristor

These are converter thyristors.

They use amplifying gate thyristor.

Also called inverter thyristors.

lightly doped ~ 10^8

lightly doped ~ 10^6

note: this is a current of electrons (npn case) and so the

BJT modes of operation

BJT modes of operation

BJT structure (active)

current of electrons for npn transistor

Without a gate-to-source voltage applied, no current can

N-channel vs. P-channel

For current to flow, VGS > VT

For current to flow, VGS < VT

Enhancement mode: VT > 0

Enhancement mode: VT < 0

Depletion mode: VT < 0

Depletion mode: VT > 0

Transistor is ON when VG=0V

Transistor is ON when VG=0V

MOSFET Circuit Symbols

For a p-channel MOSFET, the SOURCE is biased at a higher

The BODY terminal is usually connected to a fixed potential.

NMOSFET IG vs. VGS Characteristic

The gate is insulated from the

NMOSFET ID vs. VDS Characteristics

Above threshold (VGS > VT):

The MOSFET as a Controlled Resistor

oxide thickness tox

Inversion charge density Qi(x) = -Cox[VGS-VT-V(x)]

ID vs. VDS Characteristics

The MOSFET ID-VDS curve consists of two regions:

process transconductance parameter

CUTOFF region: VG < VT

The Evolution Of IGBT

Bipolar Power Transistor Uses Vertical Structure For

The Evolution Of IGBT

Power MOSFET Uses Vertical Channel Structure Versus

Lateral MOSFET structure

The Evolution Of IGBT

Discrete BJT + Discrete Power MOSFET In Darlington