Kiu 1: Khuch i cng sut m thanh, tng tin khuch i lin lc qua t (Mch lm vic vi bin tn hiu ln)

Cch ly phn cc DC: Vn cp cc mc volt phn cc.

* Dng lm vic ca Q1 ly khong 1mA.

* Dng lm vic ca tng thc ly khong 10mA.
trng thi tnh cc transistor tng cng sut ko y c cho phn cc gn nh
ngng dn, v tng cng sut cho lm vic hng B mch cho hiu sut cao, khong
78%. Dng ton phn khong 12mA l tt

m vic vi bin tn hiu ln)

Q1 l tng tin khuch i vi R1-R2 l cu chia volt, ly p phn cc cho chn B ca Q1. R4 l in tr nh
dng lm vic cho Q1. R5 l in tr ly tn hiu hi tip nghch v R3 l in tr nh p cho chn C. Tn hiu
qua t lin lc ng vo C1 vo trn chn B v qua t lin lc ng ra C3 ra trn chn C. C4 l t ha ln dng lc
b tn hiu trn R4 lm mt tc dng hi tip nghch gy ra do R4. Tng tin khuch i c cp ngun nui
qua in tr gim p R6 v t lc C2.
Q2 l tng thc, n l tng khuch i cng sut nh hng A, nn dng lm vic IC ly khong 10mA. R13 l
in tr ly mc p trung im cp phn cc cho chn B ca Q2. R14 l in tr lm tng n nh nhit cho
Q2. R7 v R8 dng nh p chn C v cng dng nh dng cho Q2. Cc diode D1, D2, D3 dng ly p phn
cc DC cp cho cc transistor tng cng sut sa mo ti giao im ca tn hiu. Tn hiu ly ra trn chn C
cp cho tng ko y rp vi Q3, Q4. T C5 to tc dng hi tip t c dng lm cn bng bin ca tn
hiu ng ra (bin tn hiu phn ln v phn xung bng nhau ).
Q3, Q4 l 2 transistor h b (h tng b tc cho nhau). Q3 l loi transistor npn v Q4 l loi transistor pnp.
Nh vy khi tn hiu ra trn chn C ca Q2 tng ln s lm Q3 dn in th Q4 ngng dn v ngc li, khi tn
hiu trn chn C ca Q2 gim xung, th Q4 dn in v Q3 ngng dn.
Q5 ghp phc hp vi Q3 v Q6 ghp phc hp vi Q4. Vi cc transistor ghp phc hp thng c n
nh nhit km, do ngi ta dng cc in tr R9 v R10 gia tng h s n nh nhit cho Q5, Q6. R11 v
R12 l cc in tr nh c cng dng cn bng dng ko y qua loa. C7 l t ra loa, C7 phi ly tr ln v loa
vn c tr khng nh. Ngang loa mc mch lc zobel n nh tr khng ca loa trong dy tn tn hiu m
thanh.

Ch : Vi mch khuch i ko y ny, mc p ng ra trung im phi ly bng na mc p ngun. Chng

ta bit mc p trung im ph thuc vo mc p trn chn C ca Q2, vy khi iu chnh tr ca in tr R13
cng s lm thay i mc p trung im. Trong mch vi ngui nui l 30V, mc p trung im phi l 15V.

Tn hiu ng vo v ng ra khng mo. Bin tn hiu ng ra khai thc gn bng mc ngu

(lc ln gn bng 15V v lc xung gn bng -15V).

Ch : li ca mch ph thuc vo t s ca 2 in tr mch hi tip nghch R16 v R

gim R5, mc hi tip nghch s gim v mch s tng li v ngc li, nu tng tr c
tr R5, mc hi tip nghch ln s lm gim li.

n B ca Q1. R4 l in tr nh
r nh p cho chn C. Tn hiu
chn C. C4 l t ha ln dng lc
n khuch i c cp ngun nui

c IC ly khong 10mA. R13 l

tr lm tng n nh nhit cho
e D1, D2, D3 dng ly p phn
n hiu. Tn hiu ly ra trn chn C
lm cn bng bin ca tn

pn v Q4 l loi transistor pnp.

ngng dn v ngc li, khi tn

p phc hp thng c n
n nh nhit cho Q5, Q6. R11 v
ra loa, C7 phi ly tr ln v loa
a loa trong dy tn tn hiu m

y bng na mc p ngun. Chng

iu chnh tr ca in tr R13
c p trung im phi l 15V.

ng ra khai thc gn bng mc ngun nui

tr mch hi tip nghch R16 v R5. Nu

ng li v ngc li, nu tng tr ca in

Kiu 2: Khuch i cng sut m thanh, tng tin khuch i lin lc thng

Ch : li ca mch ph thuc vo h s hi tip nghch to bi R5 v R13. Tng tr R13, mc

hi tip nghch s tng cao v li ca mch s gim v ngc li, nu cho gim tr ca R13, mc
hi tip nghch s gim v li ca mch s tng ln.

T lc ngun C2

Q2 l tng thc (tng thc cho lm vic theo kiu khuch i cng sut nh hng A), chn B cho ni thng vo
chn C ca Q1. Trn chn C c R6 R7 l in tr va nh p chn C v va nh dng IC. D1, D2, D3 dng
ly p DC phn cc cho cc transistor tng ko y nhm gim mo gy ra do ro p ( ng vo ca cc
transistor, trn chn BE u c ro p khong 0.5V). C4 l t c tr nh dng to hi tip nghch vng tn
cao gi cho mch khng pht sinh dao ng t kch. C3 l t hi tip t c dng lm cn bng bin t
hiu ng ra (gi cho bin tn hiu ln bng vi bin ca tn hiu xung.

Q3, Q5 v Q4, Q6 l cc transistor ghp phc hp (cn gi l transistor darlington) dng lm tng khuch i
cng sut dng ko y. R8 v R9 dng lm tng h s n nh nhit cho cc transistor phc hp. R10, R11 l
cc in tr nh dng lm cn bng dng in qua cc transistor cng sut. C5 l t ha c tr ln, dng c
dng in ko y cho loa. Ngang loa dng mch lc zobel n nh tr khng ca loa trong dy tn tn hiu
m thanh ( vng tn s cao, tr khng ca loa tng, lc mch lc zobel s lm gim tr khng ca loa,
vng tn s thp, tr khng ca loa nh, mch lc zobel s khng c tc dng).

Mch lm vic nh sau: Khi tn hiu dng sin qua t lin lc C1 vo chn B ca Q1, tn hiu ny s c khu
i v cho ra trn chn C, n tc dng thng vo chn B ca Q2, tn hiu ra trn chn C ca Q2 s vo thng
tng cng sut ko y. Khi bin tn hiu tng n s lm cho Q3, Q5 dn in v lc ny Q4, Q6 trng th
ngng dn, v ngc li, khi bin tn hiu trn chn C ca Q2 gim xung, n s lm cho Q4, Q6 dn in
lc ny th Q3, Q5 trng thi ngng dn. S ln xung ca mc p trung im s qua t C5 to dng xoay
chiu lm rung mn loa.

ng A), chn B cho ni thng vo

a nh dng IC. D1, D2, D3 dng
ra do ro p ( ng vo ca cc
to hi tip nghch vng tn s
dng lm cn bng bin tn
.

gton) dng lm tng khuch i

ransistor phc hp. R10, R11 l
5 l t ha c tr ln, dng cp
ng ca loa trong dy tn tn hiu
lm gim tr khng ca loa,
).

a Q1, tn hiu ny s c khuch

n chn C ca Q2 s vo thng
n v lc ny Q4, Q6 trng thi
n s lm cho Q4, Q6 dn in v
im s qua t C5 to dng xoay

Khuch i cng sut vi ng vo dng vi sai, cc tng lin lc thng.

mch c p ng vng tn s thp tt, vng tn cao bin cn c nng ln.

t im ca kiu mch tng m ny l ng vo dng khuch i vi sai nn c tnh khng nhiu cng sai rt t
ng ra khng dng t ra loa nn c p ng vng tn s thp rt tt.

Khi ly phn cc cho mch ny, iu cn thit nht l mc p ng ra phi bng 0V hay gn bng 0V.
Qua cc mc volt cp cho cc chn E, B, C chng ta thy cc transistor tng cng sut c phn
cc trng thi gn ngng dn, ngha l tng ko y cho lm vic theo hng B, nh vy hiu sut
ca mch mi c nng cao, khong 78%

 tnh khng nhiu cng sai rt tt,

Q1,Q2 rp thnh mch khuch i vi sai. R1, R5 l in tr cp dng phn cc cho chn B. Chn E
Q1, Q2 c cp dng hng (dng khng i). Tn hiu cho qua t lin lc C1 vo chn B ca Q1
chn C vo thng chn B ca tng Q4 (Q4 l tng thc).

Q3 rp thnh mch cp dng hng. Chn B cho ghim p vi diode zener D1 v D1 c nh dng
R4. Cng dng in cp cho Q1, Q2 ly theo tr ca in tr R3.

Q4 l tng thc, n l tng khuch i cng sut nh hng A. Transistor ny c cp dng lm vi

l ngun bm dng hng, chn B cho ghim p vi D1 v chn E nh dng vi R6. Cc diode D2, D
ly p DC (mi diode ly 0.6V) cp cho cc transistor tng khuch i ko y sa mo gy r
trn cc mi ni BE. T nh C3 dng to tc dng hi tip nghch vng tn s cao gi cho mch
sinh dao ng t kch.

Q6, Q8 v Q7, Q9 l tng cng sut rp theo kiu ko y. Cc transistor ghp theo kiu phc hp
cc transistor darlington. R7, R8 (phi ly tr bng nhau) l cc in tr lm tng n nh nhit c
transistor darlington. D5 l diode lm cn bng tr khng ng vo ca Q7 vi ng vo trn Q6, Q8.
R10 dng lm cn bng dng in qua transistor cng sut Q8, Q10. T C4 v R13 lm mch lc z
tr khng ca loa khng thay i trong dy tn ca tn hiu m thanh.

t im ca kiu mch tng m ny l ng vo dng khuch i vi sai nn c tnh khng nhiu c

ng ra khng dng t ra loa nn c p ng vng tn s thp rt tt.

Ch : li ca mch ty thuc vo t s hi tip nghch to bi R5 v R11. Nu tng tr ca R11

tip nghch s ln, li ca mch s gim v nu gim tr ca R11, tc dng hi tip nghch s nh
ca mch khuch i s tng.

g 0V hay gn bng 0V.

g cng sut c phn
B, nh vy hiu sut

Vi ngun cp dng hng rp vi Q1, do dng in tr nh dng R3 = 1K, nn mc d

cho Q1, Q2.
Q4 lm vic vi mc dng l 19.92mA, y l dng hng c cp bi Q5 vi in tr
phn ca mch l 30.79mA.

ng phn cc cho chn B. Chn E chung ca

lin lc C1 vo chn B ca Q1 v ly ra trn

zener D1 v D1 c nh dng vi in tr
3.

sistor ny c cp dng lm vic bi Q5. Q5

nh dng vi R6. Cc diode D2, D3, D4 dng
h i ko y sa mo gy ra do ro p
vng tn s cao gi cho mch khng pht

nsistor ghp theo kiu phc hp cn gi l

tr lm tng n nh nhit ca cc
a Q7 vi ng vo trn Q6, Q8. in tr R9,
0. T C4 v R13 lm mch lc zobel gi cho
nh.

i sai nn c tnh khng nhiu cng sai rt tt,

tt.

R5 v R11. Nu tng tr ca R11, tc dng hi

1, tc dng hi tip nghch s nh v li

nh dng R3 = 1K, nn mc dng hng s l 1.5mA, dng ny cp

ng c cp bi Q5 vi in tr nh dng l R6 (120). Dng ton