BC556,A,B
BC557,A,B,C
manenum naTINGS BC558I
Rating [Symboi | Bcss6 | Bcss7 | BCS58 5 B
Caer En ge ae CASE 29-04, STYLE 17
cincur ne Vase eensnenenietan 70.82 (10-2284),
Er Ds ous ves = ves
Coles Caren Conimnae [ig | =t00 ne sen
Taal Dever Daagsin Ta = BE] Po ee i aN
eoacaes ee Slate
Tel Deiee Despstona Te = 5E | FO ts vin a
Dost soe 2 nw Sf :
Operating an Storage Juncion [Ts Teg Seo +180 c ce Ste
a al
THERMAL GAAAACTERETOS
HARACTER =e AMPLIFIER TRANSISTORS
Tasrarfesnanes nein Anne Raa “| son [ew a sicon
eres ne eae tr terre ene
ELECTIGAL CHARACTERISTICS iT -25.Cules shar se)
cha ° | [ae
“ara - ——
Cole Ene Beton Vote ance | v
eo maa eos Pe |. 7 -
S =
_ SS : OSs] sl
Corea se Bown Waa ence v
or sous »|—-|-
Ed sisi
eins Badoon Voss aon v
ee eae 8 scsse «| —- | -
= |
fees =) 838
Scar Potro) ed
SS haps ics
ow SURAT
Be Goren we :
ieee vee -s0vi—gcepnssra -
Scstes re eso a =
ae Et &
= elo S
ee nae
So B/ 2) 8
sae 8) 3 | se |
ic -soomsse vce som) Belbtasoa ej 2)
Soe rosso =) fs
= =) B=
Corona Ee Sou Vale Vee v
ee nmaae os kas — | -a0s | 3
ter apna > ganas =] MP |
areeeenenen peeueuetnenat
203
MOTOROLA SMALL SIGNAL TRANSISTORS, FETs AND DIODESBC556,A,B, 8C5S7,A,8,C, BC558B
ELECTRICAL CHARACTERISTICS (continued! (Ta ~ 25°C unos otherwise noted!
[ herctrtie ‘Smbol_[| Min [ To [Max [unk]
ON CHARACTERISTICS [coninue)
SaeeEmiter Saturation Vllage Venice v
Tie sto made Ig= “08 mad) - | -7 | -
(G= “tow matey = “somace) 7 _ = | se | =
‘Base-Emitter On Voltage VaE\on) v
Tig wzormate Vet = 50 vie) | -oss | -oe | -o7
i= ~tomade,vog = so vac es a7_| ove _|
SMALL SIGNAL CHARACTERISTICS
PI [current Gin BandwithProdut 7 me
Wo ima Yor = "a0v.t= WOMHe) —@csso - | wm | -
bese =| xe | t
Out Capacance te 30] 60] oF
Wego 1OV.Ie = 0.1 = 10NMar
Tie Figure NF @
Tie "02 made Veg = ~80V, ecss6 20 |
NGo2koomt = Tous 20K Bes? do | te
sess = | ie |
Seah Signal Curent Gan We =
Tle vz0mAge Vor = -B0V,t= 10M) Besse vs seo
css 8 i =
scse0n 874 is | m | 2
scsse0 S570 5500 2 | a |
scssre co | me | 2
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES,
294BC556,A,B, BC5S7,A,B,C, BC558B
BC5S7/BC558
FIGURE 2 COLLECTOR SATURATION REGION
TM T
ies
: i ‘uo ca
T
a FFF sae Yr = —108
Tom
Sete
Te
Un
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
2.95gC CURRENT GAN RMALED)
E
eg. CoueToREwTTER voLTASE ETS
ccabaaranc
te
BC556,A,B, BCSS7,A,8,C, BCS58B
FIGURE 7 — DC CURRENT GAIN
‘¢-COUECTOR cURFENT AUP
Ste or
Ia ASE CURRENT
FiguRE 11 - capacitance
mee
7
a REVERSE VOLTAGE HTS
IGURE 9 - COLLECTOR SATURATION REGION
=e
BC55E
FIGURE 8 - “ON” VOLTAGE.
Becd
g Vesey = 8
2
Bau
ke couecToRcumenTints
FIGURE 10 ~ BASE EMITTER TEMPERATURE COEFFICIENT
TEMPERATURE COESLNT
r CUMENTGuW sano PROUT Me
4
|p COMECTOR CUHFENT na
FIGURE 12 - CURRENT GAIN-BANOWIOTH PRODUCT
i
{Oe TOR cue mk
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES.
296BC556,A,B, BC557,A,8,C, BC558B
FIGURE 13 ~ THERMAL RESPONSE
"
° 7 Ss $
a 5
= tH
gg° Hol
$70 :
3 - al = ha
ge a f Rac = FCW Mer
32 on < ay = 0%
Bg ass : Suk] Ran sewn
Bia SSH LET | ocunes my rnrenen
7 ea 5
fn HT ET Bayon D =e T= Te = Rout
aa
ee COR TER HCE
The safe operating tea curves india
‘operation Collector load nes For specific ey
le Voce lis of the tansstor that must be observed for reliable
its must fall below the limits indicated by the appheable curve
The data of Fyre 14 based upon Tyipk)*!50°C: Te oF TA 6 variable devending un9n conditions. Pulse curves ae
valid for duty cycles to 10% provided Tyiphi<150°C. Tyipe) may be caleulated fram the data of Figure 13. At high
Cease oF ambient temperatures thermal him tations wil reduce the power that can be handled to valves tess than the limita
tions imposed by the secondary breakdown
MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES
297