JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.

, LTD

TO-92 Plastic-Encapsulate Transistors

A92

TRANSISTOR PNP

TO92

FEATURES
Power dissipation
PCM : 0.625WTamb=25
Collector current
ICM: -0.5 A
Collector-base voltage
V(BR)CBO : -300V
Operating and storage junction temperature range
T J T stg: -55 to +150
ELECTRICAL CHARACTERISTICSTamb=25
unless
Parameter

Symbol

Test

1.EMITTER

2.BASE

3.COLLECTOR

1 2 3

otherwise

conditions

specified

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= -100AIE=0

-300

Collector-emitter breakdown voltage

V(BR)CEO

Ic= -1 mA IB=0

-300

Emitter-base breakdown voltage

V(BR)EBO

IE= -100A IC=0

-5

Collector cut-off current

ICBO

VCB= -200 V

IE=0

Emitter cut-off current

IEBO

VEB= -5 V IC=0

-0.25

-0.1

hFE1

VCE= -10 V, IC=- 1 mA

60

hFE2

VCE= -10V, IC = -10 mA

80

hFE3

VCE= -10 V, IC= -80 mA

60

Collector-emitter saturation voltage

VCE(sat)

IC= -20 mA, IB= -2 mA

-0.2

Base-emitter saturation voltage

VBE(sat)

IC= -20 mA, IB= -2 mA

-0.9

DC current gain

Transition frequency

fT

VCE= -20 V, IC= -10 mA

f = 30MHz

250

50

MHz

CLASSIFICATION OF h FE(2)
Rank

B1

B2

Range

80-100

100-150

150-200

200-250

TO-92 PACKAGE OUTLINE DIMENSIONS

D1

A1

e
e1

Symbol

Dimensions In Millimeters

Dimensions In Inches

Min

Max

Min

Max

3.300

3.700

0.130

0.146

A1

1.100

1.400

0.043

0.055

0.380

0.550

0.015

0.022

0.360

0.510

0.014

0.020

4.400

4.700

0.173

0.185

D1

3.430

4.300

0.135
4.700

0.169

1.270TYP

0.185
0.050TYP

e1

2.440

2.640

0.096

0.104

14.100

14.500

0.555

0.571

1.600

0.000

0.380

0.063
0.000

0.015