TOSHIBA 2S€2500 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2$€2500 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Tama © High DC Current Gain and Excellent hpg, Lincarity : 140~600 (VoR=I1V, I¢=0.5A) & 70 (Min), 200 (Typ.) (Vop=1V, I¢=2A) = © Low Saturation Voltage rine + VCE (oat) OSV (Max) (I¢-2A, Ip—50mA) rows MAXIMUM RATINGS (Ta =25°C) “ae ‘CHARACTERISTIC symBon | RATING | UNIT | Collector-Base Voltage VoBo 30 Vv ur] [tar , Vor 30 Collector-Emitter Voltage Tone a Emitter Base Voltage VEBO 6 Vv Collector [De 1c 2 A 1. ewirrer Current Pulsed Grate | lop 5 2 cOECTOR Base Current In 05 A_llapeo to samo Collector Power Dissipation PC 900 | mw [Junction Temperature Ty 150 eo _| EEA = Storage Temperature Range Tag | —55~150 | C_|[TOSHIBA _ 2-518 Weight : 0.36g Note 1 : Pulse Width=10ms, Duty Cyele=30% ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC sympoL | test conpron —_ | saw, | Typ. [Max.] unrr Collector Cutoff Current Topo |Van=80V, Ip=0 — =i ae Emitter Cut-off Current Teo __|VEp=6V. Io= = | = [100 [aa Collector-Emitter Breakdown y Gallet real Voro |ic=10mA, 1p= w}—|]—|v Emitter-Base Breakdown : Voltage ‘ase Breakdos Vepo |Ig=1mA, Io=0 6|-—-|-—-|v BFE) = DC Current Gain (Note 2) |YCE=1V, To=0.54 140 | — | 900 BRE @) | VOR=1V, Io=2A 70 | 200 | — sagelor Pmitter Saturation | Veg ieaty [Ig=2A, Ip=50mA =|} 02] 05] v Base-Emitter Voltage Var | Von=1V, Io=2A = [eas [a5 [Vv [Transition Frequency tr VoR=1V, Io=0.58 — | 150 [ — | Mie Collector Output Capacitance | Cop |VoR=I0V, Ip=0, f=Mmz| — | _27| — | oF Note 2: hg (1) Classification A: 140~240, B : 200~330, C : 300~450, D : 420~600 Panne OTOIaA « couimaly working wo meow fhe Guay od He clahlny Ol provucs, Neverien, smconiuc devas Wy general can fat aa piodic, o-oo dance of soley. noo allan arth matin 0 lugs Feta ro atte Sparating ranger ar fet forth inthe: on recent roducteepoctiesve. Nie, leare Keep ml mind the presavtione and condi@one wet fork Mth TOsitak’semeondoca: Relay Vondbock 7997-09-01 1/2TOSHIBA 2S€2500 Jc - Vcr "4 Ic - VBE te COMMON EMITTER couuow errren ry 2 [ite tan280 2 t 3 2 Ivo 2 E 2 | 4 B & 1 1 1 COLLECTOREMITTER VOLTAGE. Vor «) BASE-EMITTER VOLTAGE. Vag.) YCE (sat) — IC os) comvox nmnren oy ne =e Es [tons . recor & a = a g EF a = & : FE oy Bool ed . a ‘tor 35 T 7 COLLECTOR CURRENT Ig (A) couseros cunnest te SAFE OPERATING AREA fig Max. (PULSED) Ht Po = Ta LOT TN . a 2 ve openanion = eg 4 5 iTa=25°0) g z a“ 8 ona 2 3 os} Nonnerennve: Ee g PULSE Tu=25°0 2 3 8 PULSE WIDTH=10ms & 8 DUTY cYCLES3on Zs ea)cunves wosr er oenareD { { sl" rE a oF 7 AMBIENT TEMPERATURE Ts ¢) (COLLECTOR-EMITTER VOLTAGE Vox WW) a Tie loynaton conained heen greriad ony wa que (or he sppiatons of our produca_ No reippnaby & aaunad by, TOSHIBA. PoRpO EEN ta ioe Impteation of ottrwse tract any incheual propery ar otner rights of formation corse bran tbe to ange wtneuk MoE ie spa neha et hom tu. ho eee red 7997-09-01 2/2